SD1476

SD1476 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1476 is a planar transistor using diffused emitter ballasted resistors for high linearity Class AB operation in VHF and band 1 television transmitters and transposers. PACKAGE STYLE .450 BAL FLG(B) A .120 x 45° B FULL R ED C M FEATURES: • Common Emitter • PG = 12 dB at 240 W/88 MHz • Omnigold™ Metalization System .208 F .210 I .050 NOM. G H 4X.060 R MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 70 V 40 V 4.0 V 430 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.4 °C/W DIM A B C D E F G H I J K L M .445 / 11.30 .120 / 3.25 .411 / 10.44 .825 / 20.96 .525 / 13.34 1.255 / 31.88 1.675 / 42.55 .002 / 0.05 .095 / 2.41 .115 / 2.92 MINIMUM inches / mm JK L MAXIMUM inches / mm .373 / 9.47 .205 / 5.21 .385 / 9.78 .130 / 3.30 .421 / 10.69 .865 / 21.97 .535 / 13.59 1.265 / 32.18 1.685 / 42.80 .006 / 0.15 .105 / 2.67 .135 / 3.43 .250 / 6.35 .457 / 11.61 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE COB PG ηC IC = 50 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IE = 20 mA VCE = 30 V VCE = 5.0 V VCB = 28 V VCE = 32 V IC = 2 X 400 mA POUT = 240 W IC = 7.0 A f = 1.0 MHz f = 88 MHz MINIMUM TYPICAL MAXIMUM 70 40 4.0 10 10 50 220 12 50 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1