SD1536-08

ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. PACKAGE STYLE .250 SQ 2L FL 1 3 FEATURES INCLUDE: • Gold Metallization • Internal Impedance Matching • Broad Band Performance 2 MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 10 A 65 V 292 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 0.60 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICES hFE POUT GP IC = 25 Ma IC = 10 mA IE = 1.0 mA VCE = 50 V TC = 25°C TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 10 UNITS V V V mA --W dB VCE = 5.0 V VCE = 50 V PULSE WIDTH IC = 100 mA PIN = 13.5 W = 10 μS f = 1025 to 1150 MHz = 1.0% 5.0 90 8.4 DUTY CYCLE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1