SD1899

SD1899 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1899 is a Common Base Device Designed for class C Applications. PACKAGE STYLE .250 2L FG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Diffused Ballast Resistors MAXIMUM RATINGS IC VCBO VCEO PDISS TJ TSTG θJC 3.8 A 50 V 25 V 66 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 6.5 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCBO BVEBO ICEO hFE COB PG ηC VCC = 28 V IC = 25 mA IE = 10 mA VCE = 25 V VCE = 8.0 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 3.5 25 UNITS V V mA --pF IC = 400 mA f = 1.0 MHz Pout = 30 W f = 1.6 – 1.7 GHz 20 60 24 100 7.0 40 8.2 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1