SD8250

SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: N L J A B E D C M G F P I Q R D IM A B C D .395 / 10.03 .193 / 4.90 .230 / 5.84 .003 / 0.08 .118 / 3.00 .063 / 1.60 .650 / 16.51 .386 / 9.80 .900 / 22.86 .450 / 11.43 .125 / 3.18 .050 / 1.27 .405 / 10.29 .170 / 4.32 .062 / 1.58 .006 / 0.15 .131 / 3.33 E F G H I J K L M N O P Q R M IN IM U M in ch e s / m m The ASI SD8250 is Designed for Class C TACAN/DME Applications. O K FEATURES: • Internal Input/Output Matching Network • Emitter Ballasted. • PG = 7.8 dB at 30 W/ 1215 MHz • Omnigold™ Metalization System H .062 x 45° Ø.120 M A XIM U M in ch e s / m m .140 / 3.56 .110 / 2.80 .110 / 2.80 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 20 A 50 V 575 W @ TC 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.28 °C/W CHARACTERISTICS SYMBOL BVCBO BVCEs BVEBO ICES hFE PG ηC IC = 35 mA IC = 25 mA IE = 15 mA VCE = 50 V VCE = 5.0 V VCC = 50 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 60 4.0 20 UNITS V V V mA --dB % IC = 1.0 A POUT = 250 W f = 960 - 1215 MHz 10 8.0 38 200 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 SD8250 ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA PIN = 40 W VCC = 50 V FREQ 960 MHz 1090 MHz 1215 MHz ZIN (Ω) 1.0 + j3.5 4.0 + j3.5 2.2 + j2.2 ZCL (Ω) 1.9 – j1.8 1.6 – j0.9 1.4 – j1.1 L N J A B E D K O C M G F P I Ø.120 .062 x 45° H R Q D IM A B C D E F G H I J K L M N O P Q R M IN IM U M inches / m m M AXIM U M inches / m m .140 / 3.56 .110 / 2.80 .110 / 2.80 .395 / 10.03 .193 / 4.90 .230 / 5.84 .003 / 0.08 .118 / 3.00 .063 / 1.60 .650 / 16.51 .386 / 9.80 .900 / 22.86 .450 / 11.43 .125 / 3.18 .050 / 1.27 .405 / 10.29 .170 / 4.32 .062 / 1.58 .006 / 0.15 .131 / 3.33 .407 / 10.34 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2