TAN250A

TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 30 A 60 V 575 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 0.30 OC/W TC = 25 OC CHARACTERISTICS SYMBOL BV CBO BV CES BV EBO ICBO hFE POUT PG ηC IC = 20 mA IC = 25 mA IE = 20 mA VCB = 50 V VCE = 5 V TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 60 60 4.0 12 UNITS V V V mA --W dB % IC = 1.0 A f = 960 to 1215 MHz Duty Cycle = 5 % 20 250 6.0 120 VCC = 50 V PIN = 13 W Pulse Width = 20 µS 7.0 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1