0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TP62601

TP62601

  • 厂商:

    ASI

  • 封装:

  • 描述:

    TP62601 - NPN RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
TP62601 数据手册
TP62601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. PACKAGE STYLE 230 2L FLG FEATURES INCLUDE: • Hermetic Package • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC 0.5 A 45 V 11.6 W @ TC = 25 °C -55 °C to+200 °C -55 °C to+200 °C 15 °C/W 1 = EMITTER 2 = COLLECTOR 3 = BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO ICBO hFE COB POUT ft TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 20 mA IC = 20 mA IE = 250 µA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 20 V VCE = 20 V IE = 220 mA IE = 220 mA IC = 100 mA f = 1.0 MHz f = 2.0 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM UNITS 45 50 22 3.5 125 20 120 5.0 1.25 2.7 V V V V µA --pF W GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1
TP62601 价格&库存

很抱歉,暂时无法提供与“TP62601”相匹配的价格&库存,您可以联系我们找货

免费人工找货