TPV3100

ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. PACKAGE STYLE .400 8L FLG C D B A F U LL R G F E .1925 .125 K H O FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching D IM 4 x .060 R I J N LM M IN IM U M inches / m m M A X IM U M inches / m m MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 8.0 A 65 V 218 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.80 °C/W A B C D E F G H I J K L M N O .395 / 10.03 .380 / 9.65 .735 / 18.67 .645 / 16.38 .895 / 22.73 .420 / 10.67 .003 / 0.08 .120 / 3.05 .159 / 4.04 .065 / 1.65 .115 / 2.92 .030 / 0.76 .125 / 3.18 .360 / 9.14 .075 / 1.91 .130 / 3.30 .390 / 9.91 .765 / 19.43 .655 / 16.64 .905 / 22.99 .430 / 10.92 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10.29 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICER hFE P1dB Pg IC = 50 mA IC = 10 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V TC = 25 °C TEST CONDITIONS RBE = 75 Ω RBE = 75 Ω IC = 2.0 A ICQ =2X50 mA ICQ =2X50 mA Fo = 225 MHz Fo = 225 MHz MINIMUM TYPICAL MAXIMUM 65 30 4.0 10 20 100 8.5 9.5 150 UNITS V V V mA --W dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1