TPV595

TPV595 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV595 is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE .250 BAL FLG .020 x 45° B A Collector - 2 places Ø .130 N O M . .05 0 x 45° E D C N FEATURES: • Gold Metalization Emitter connected to flange F H I J K L M G Base - 2 places • Emitter Ballast Resistors • Internal Input Matching D IM A B C D E F G M IN IM U M inches / m m M A X IM U M inches / m m MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 2 x 2.6 A 45 V 6 5 W @ TC = 2 5 C -50 OC to +200 OC -50 C to +200 C 2.5 OC/W O O O .0 60 / 1 .52 .055 / 1.40 . 125 / 3.18 .243 / 6.17 .630 / 16.00 .092 / 2.34 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 1.91 .24 5 / 6 .22 .565 / 14.35 .750 / 19.05 .3 27 / 8.31 .006 / 0.15 .065 / 1.65 .0 95 / 2.41 .190 / 4.83 .257 / 6.53 .255 / 6.48 .670 / 17.01 .065 / 1.65 H I J K L M N CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO ICBO BVEBO hFE COB PG IMD3 IC = 40 mA IC = 20 mA IC = 20 mA VCB = 20 V IE = 5 mA VCE = 20 V VCB = 25 V TC = 25 C O NONETEST CONDITIONS RBE = 51 Ω MINIMUM TYPICAL MAXIMUM 25 40 45 5.0 3.0 28 UNITS V V V mA V -- IC = 500 mA 10 20 pF dB VCE = 25 V F = 860 MHz Vision = -8 dB IC = 2 x 900 mA Sound = -7 dB PREF = 14 W SB = -16 dB 8.5 9.5 -47 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1