TPV596A

TPV596A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV596A is designed for MATV amplifiers up to 860 MHz and 500 mW band V TV transposer stages. PACKAGE STYLE .280 4L STUD A 45° FEATURES: • Difused emiter ballast resistors • PG = 12 dB at 0.5 W/ 860 MHz • Omnigold™ Metalization System B C E B E D C J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.7 A 45 V 24 V 3.5 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W DIM A B C D E F G H I J K F E I G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IMD1 IC = 20 mA IE = 4.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA MINIMUM TYPICAL MAXIMUM 45 24 3.5 1.0 UNITS V V V mA --pF dB dB IC = 100 mA f = 1.0 MHz IE = 220 mA PIN = 50 mW f = 860 MHz 15 120 5.0 VCE = 20 V POUT = 0.5 W 11.5 12 -58 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1