TPV695A

TPV695A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV695A is a high gain push-pull device Designed for high power, band IV & V Transposers and transmitter amplifiers Applications. PACKAGE STYLE .250 BAL FLG .0 20 x 45 ° B A Ø .13 0 N O M . .0 50 x 45 ° E D C N FEATURES: • Gold Metalization F H I J G • Emitter Ballast Resistors • Internal Input Matching D IM A B C D E F G H I J K L M N L K M M IN IM U M inche s / m m M AX IM U M inche s / m m MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 5.0 A 28 V 70 W @ TC = 25 °C -50 °C to +200 °C -50 °C to +200 °C 2.5 °C/W .0 60 / 1.52 .0 55 / 1.40 . 1 25 / 3.18 .2 43 / 6.17 .6 30 / 16 .0 0 .0 92 / 2.34 .5 55 / 14 .1 0 .7 39 / 18 .7 7 .3 15 / 8.00 .0 02 / 0.05 .0 55 / 1.40 .0 75 1 .9 1 .2 45 / 6.22 .5 65 / 14 .3 5 .7 50 / 19 .0 5 .3 27 / 8.31 .0 06 / 0.15 .0 65 / 1.65 .0 95 / 2.41 .1 90 / 4.83 .2 57 / 6.53 .2 55 / 6.48 .6 70 / 17 .0 1 .0 65 / 1.65 NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE COB PG IMD3 VCE = 25 V IC = 40 mA IC = 20 mA IE = 5.0 mA VCB = 20 V TC = 25 °C TEST CONDITIONS MINIMUM 28 45 3.0 TYPICAL MAXIMUM UNITS V V V 15 VCE = 20 V f = 1.0 MHz 8.5 POUT = 14 W f = 845 MHz -47 20 80 20 mA --pF dB dBc IC = 500 mA VCB = 25 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1