TPV8100B

TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting PACKAGE STYLE .438X.450 4LFL MAXIMUM RATINGS IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W O O O O O O 1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON) CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICER hFE Gp η Pout IC = 10 mA IC = 20 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V TC = 25 C O TEST CONDITIONS RBE = 75 Ω MINIMUM TYPICAL MAXIMUM 30 65 4.0 UNITS V V V RBE = 75 Ω IC = 2.0 A Icq = 2X50 mA Icq = 2X50 mA f = 860 MHz f = 860 MHz f = 860 MHz 30 8.5 55 100 10 120 mA --dB % W Icq = 2X50 mA VCE = 28 V 1.0 dB COMPRESSION (ref = 25 W) VCE = 28 V VCE = 32 V Icq = 2X50 mA Icq = 2X25 mA FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL) Pout Pout f = 860 MHz f = 860 MHz 125 150 W W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1