TVU0.5

TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5 is a gold metallized RF transistor designed for UFH linear applications for TV bands IV and V. It utilizes emitter ballasting for high linearity and ruggedness. PACKAGE STYLE .280 4L STUD A 45° FEATURES: • Common Emitter B C E B E • PG = 9.5 dB at 0.5 W/ 860 MHz • Omnigold™ Metalization System E F D C J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 2.0 A 45 V 25 V 3.5 V 31.8 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 5.5 °C/W DIM A B C D E F G H I J K G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10640 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IMD1 IC = 20 mA TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IE = 0.25 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 20 V POUT = 0.5 W IC = 220 mA PIN = 50 mW IC = 100 mA f = 1.0 MHz f = 860 MHz MINIMUM TYPICAL MAXIMUM 45 24 3.5 0.45 15 120 5.0 9.5 -58 UNITS V V V mA --pF dB dBc Conditions: f1 = 860 MHz (-8 dBc), f2 = 863.5 MHz (-16 dBc), f3 = 864-5 MHz (-7 dBc) A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1