TVU001_07

TVU001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU001 is designed for UHF linear applications; especially TV bands IV & V. It is characterized for high linearity, Class-A operation. It utilizes Emitter Ballasting and gold metalization for ruggedness & reliability. PACKAGE STYLE .280 4L STUD A 45° C B E B D C E FEATURES: • Common Emitter, 20 V operation • PG = 10 dB at 1.0 W/860 MHz • Omnigold™ Metalization System • Emitter Ballasting DIM A B C D E F G H I J .175 / 4.45 .275 / 6.99 K .245 / 6.22 E F J I G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 1.2 A 45 V 25 V 3.5 V 19.4 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 9.0 °C/W .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10643 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO ICBO IC = 40 mA IC = 40 mA IE = 0.5 mA VCB = 28 V TC = 25 °C NONETEST CONDITIONS IC = 2.0 mA RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 50 24 3.5 0.45 UNITS V V V V mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. TVU001 CHARACTERISTICS hFE COB PG IMD3 VCE = 5.0 V VCB = 28 V TC = 25 °C IC = 200 mA f = 1.0 MHz 20 120 7.0 --pF dB dBc VCE = 20 V IC = 440 mA POUT = 1.0 W f2 = 863.5 MHz (-16 dBc), f1 = 860 MHz (-8 dBc), f3 = 864.5 MHz (-7 dBc) 10 -60 IMPEDANCE DATA FREQ. (MHz) 470 650 860 ZIN (Ω) 2.0 – j1.5 1.9 – j0.9 1.8 + j0.8 ZCL (Ω) 23 – j35 15 – j27 8.0 – j15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2