TVU005B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TVU005B is a Common Emitter Device Designed for High Linearity Class A Band IV and V Television Transmitters.
FEATURES INCLUDE:
• High Gain - 13 dB min. • Gold Metalization • Emitter Ballasting
PACKAGE STYLE .204 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC 300 mA 45 V 5.3 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 33 C/W
O
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BV CEO BV CBO BV EBO hFE COB PG IMD3 IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V
TC = 25 OC
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22 45 3.5
UNITS
V V V
IC = 100 mA f = 1.0 MHz
20
200 3.0
--pF dB dBc
VCE = 20 V IC = 150 mA Pref = 0.5 W f = 860 MHz SOUND = -7.0 dB VISION = -8.0 dB CHROMA = -16 dB
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are Subject to change without notic.
REV. A
1/2
TVU005B
S - PARAMETERS
VCE = 20 Volts, FREQ. MHz
100 200 300 400 500 600 700 800 900 1,000
ID = 150 mA S12 S22 ANG.
30 30 30 30 35 35 35 40 45 45
S11 MAG.
0.735 0.840 0.860 0.857 0.855 0.850 0.850 0.850 0.855 0.860
S21 ANG.
190 188 181 178 173 170 168 165 163 161
MAG.
13.65 8.15 5.75 4.25 3.50 2.80 2.45 2.20 2.00 1.75
ANG.
115 100 90 80 70 66 60 55 50 45
MAG.
0.025 0.025 0.025 0.030 0.035 0.035 0.040 0.045 0.050 0.055
MAG.
0.364 0.275 0.280 0.285 0.300 0.310 0.320 0.330 0.340 0.350
ANG.
280 240 240 230 225 220 215 210 215 215
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are Subject to change without notic.
REV. A
2/2
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