TVU100_07

TVU100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .450 BAL FLG(A) .060x45° B A FULL R .100x45° 11 C D F E 3 P 3 2 G H J M L N FEATURES: • Common Emitter, Class AB push-pull • PG = 8.5 dB at 100 W/860 MHz • Omnigold™ Metalization System • 28 V operations K 2 DIM A MINIMUM inches / mm MAXIMUM inches / mm .055 / 1.40 .120 / 3.05 .455 / 11.56 .120 / 3.05 .230 / 5.84 .838 / 21.28 1.095 / 27.81 .525 / 13.34 .002 / 0.05 .055 / 1.40 .080 . 2.03 .850 / 21.59 1.105 / 28.07 .535 / 13.59 .005 / 0.15 .065 / 1.65 .095 / 2.41 .195 / 4.95 .445 / 11.30 .455 / 11.56 .130 / 3.30 .785 / 19.94 .465 / 11.81 .130 / 3.30 MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 16 A 65 V 30 V 220 W @TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.8 °C/W B C D E F G H J K L M N P 1 = COLLECTOR 2 = BASE 3 = EMITTER ORDER CODE: ASI10651 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE PG ηC IC = 80 mA TC = 25 °C NONETEST CONDITIONS IC = 120 mA IE = 20 mA VE = 28 V VCE = 5.0 V IC = 4.0 A f = 860 MHz RBE = 75 Ω MINIMUM TYPICAL MAXIMUM 30 40 3.5 10 25 8.5 55 120 UNITS V V V mA --dB VCE = 28 V ICQ = 2 X 100 mA PREF = 25 W POUT = 100 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1