TVV100_07

TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D B A F U LL R G FEATURES: • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold™ Metalization System F E .19 25 .125 K O H 4 x .0 60 R I J N LM MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O 16 A 65 V 33 V 3.5 V 150 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W O O O O D IM A B C D E F G H I J K L M N O M IN IM UM inche s / m m M A X IM U M inche s / m m .030 / 0.76 .115 / 2.92 .360 / 9.14 .065 / 1.65 .130 / 3.30 .380 / 9.65 .735 / 18 .6 7 .645 / 16 .3 8 .895 / 22 .7 3 .420 / 10 .6 7 .003 / 0.08 .120 / 3.05 .159 / 4.04 .395 / 10 .0 3 .390 / 9.91 .765 / 19 .4 3 .655 / 16 .6 4 .905 / 22 .9 9 .430 / 10 .9 2 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10 .2 9 .075 / 1.91 .125 / 3.18 ORDER CODE: ASI10662 O CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO hFE COB PG IC = 50 mA IC = 50 mA IC = 50 mA IE = 5.0 mA VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS RBE = 15 Ω MINIMUM TYPICAL MAXIMUM 65 60 33 3.5 UNITS V V V V IC = 500 mA f = 1.0 MHz IC = 2 X 100 mA f = 225 MHz 20 --11 60 150 --- --pF dB VCE = 28 V POUT = 100 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1