UHBS30-1

UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I F C B 2 XØ.130 FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 9.0 A DIM M INIMUM inches / mm JK L MAXIMUM inches / mm 50 V 30 V 4.0 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.5°C/W A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 ORDER CODE: ASI10670 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob PG ηC IC = 50 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 24 V VCE = 5.0 V VCB = 25 V VCE = 24 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 50 4.0 5 10 UNITS V V V mA mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 30 W f = 900 GHz 10 --50 7.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1