UHBS60-1

UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 60 W/900 MHz • Omnigold™ Metalization System PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 F G H I JK L C B 2 XØ.130 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 9.0 A 50 V DIM M INIMUM inches / mm MAXIMUM inches / mm 26 V 50 V 4.0 V 190 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.9 °C/W A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 ORDER CODE: ASI10672 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 20 V VCB = 30 V VCE = 5.0 V VCB = 24 V VCE = 24 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 50 26 3.0 10 5.0 UNITS V V V V mA mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 60 W f = 900 GHz 20 100 75 7.5 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1