ULBM10_07

ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is a gold metallized RF power transistor designed for 12.5 V, Class-C application in 450-512 MHz frequency range. It utilizes emitter ballasting for high reliability and ruggedness. PACKAGE STYLE .280 4L STUD A 45° C B E B D C E FEATURES: • Common Emitter, Class-C 12.5 V • PG = 7.0 dB at 10 W/470 MHz • Omnigold™ Metalization System F J E I MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 2.5 A DIM MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.0 °C/W A B C D E F G H I J K 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10682 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE IC = 20 mA IC = 25 mA IE = 10 mA VCB = 15 V VCE = 10 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 2.0 3.0 UNITS V V V mA mA --- IC = 1.0 A 10 150 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ULBM10 CHARACTERISTICS SYMBOL Cob PG ηC TC = 25 °C NONETEST CONDITIONS VCB = 12.5 V VCC = 12.5 V PIN = 2.0 W POUT = 10 W f = 1.0 MHz f = 470 MHz MINIMUM TYPICAL MAXIMUM 26 7.0 60 UNITS pF dB % IMPEDANCE DATA FREQ 470 MHz PIN = 2.0 W VCE = 12.5 V ZIN(Ω) 1.5 – j2.7 ZCL(Ω) 5.7 + j1.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2