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ULBM2TE_07

ULBM2TE_07

  • 厂商:

    ASI

  • 封装:

  • 描述:

    ULBM2TE_07 - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
ULBM2TE_07 数据手册
ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: • Common Emitter • PG = 8.0 dB at 2.0 W/470 MHz • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.40 A 36 V 16 V D IM F G H MINIMUM inches / mm MAXIMUM inches / mm 4.0 V 5 W @ TC = 25°C -65 °C to +200°C -65 °C to +150 °C 35 °C/W A B C D E F G H .029 / 0.740 .028 / 0.720 .355 / 9.020 .315 / 8.010 .165 / 4.200 .500 / 12.700 .016 / 0.410 .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .180 / 4.570 .750 / 19.050 .020 / 0.508 ORDER CODE: ASI10679 O CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA IE = 1.0 mA VCB = 15 V VCE = 5.0 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA --pF dB % IC = 50 mA f = 1.0 MHz POUT = 2.0 W f = 470 MHz 20 200 10 VCB = 12.5 V VCE = 12.5 V 8.0 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1
ULBM2TE_07 价格&库存

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