VFT150-28

VFT150-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-28 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FU LL R L S D Ø .125 NO M . FEATURES: • PG = 10 dB Typical at 175 MHz • No thermal Runaway • Omnigold™ Metalization System • Class-A or AB DIM C B G E H D G F S K IJ M INIMUM inches / m m M AX IM UM inches / m m MAXIMUM RATINGS ID VDSS VGS VDGR PDISS TJ TSTG θJC 16 A 65 V ±40 V 65 V 300 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI 10700 CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD TC = 25 °C NONE TEST CONDITIONS IDS = 100 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 5 A VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V MINIMUM 60 TYPICAL MAXIMUM 5.0 1.0 UNITS V mA µA V mho 1.0 3.5 375 188 26 8.5 50 10 60 5.0 VDS = 28 V VDD = 28 V PIN = 15 W VGS = 0 V IDQ = 250 mA f = 1.0 MHz Pout = 150 W f = 175 MHz pF dB % REV. B A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VFT150-28 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2