VFT300-28

VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A .080x45° B FULL R (4X).060 R E .1925 D M C FEATURES: • PG = 14 dB Typical at 175 MHz • ηD = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System F G H I N L J K DIM A MINIMUM inches / mm MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ TSTG θJC 16 A 65 V 65 V ± 40 V 500 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.35 °C/W TC = 25 °C .220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59 B C D E F G H I J K L M N MAXIMUM inches / mm .230 / 5.84 .390 / 9.91 .620 / 15.75 1.105 / 28.07 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .115 / 2.92 .230 / 5.84 .407 / 10.34 .870 / 22.10 ORDER CODE: ASI10707 MINIMUM TYPICAL MAXIMUM 65 5.0 1.0 1.0 3500 375 188 26 12 50 14 55 5.0 1.5 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS VDS GFS Ciss Coss Crss GPS ηD VGS = 0 V VDS = 28 V VDS = 0 V VDS = 10 V VGS = 10 V VDS = 10 V NONETEST CONDITIONS IDS = 100 mA VGS = 0 V VGS = 20 V ID = 100 mA ID = 10 A ID = 5 A UNITS V mA µA V V mS VGS = 28 V VDD = 28 V f = 175 MHz VDS = 0 V IDQ = 2 x 250 mA F = 1.0 MHz POUT = 300 W pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1