VHB1-28T

VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-28T is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • Class C Operation • PG = 13 dB at 1.0 W/175 MHz • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.4 A 55 V 30 V DIM MINIMUM inches / mm G H MAXIMUM inches / mm 3.5 V 5 W @ T C = 25 ° C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W O A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 .500 / 12.700 .020 / 0.508 ORDER CODE: ASI10720 CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO ICEX ICEO (S) VCE TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IC = 0.1 mA IE = 0.1 mA VC = 55 V VE = 28 V IC = 100 mA VCE = 5.0 V IB = 20 mA IC = 50 mA IC = 360 mA f = 1.0 MHz POUT = 1.0 W f = 175 MHz VBE = -1.5 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 55 55 3.5 100 20 1.0 10 5.0 200 UNITS V V V V µA µA V --pF dB % hFE COB PG ηC VCB = 28 V VCE = 28 V 3.0 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1