VHB10-12F_07

VHB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System PACKAGE STYLE .380 4L FLG B .112 x 45° A E C E C D E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 2.0 A 36 V 18 V DIM MINIMUM inches / mm B F G HI MAXIMUM inches / mm 36 V 4.0 V 20 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 8.8 °C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 ORDER CODE: ASI10712 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 15 mA IC = 50 mA IE = 2.5 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 1.0 UNITS V V V mA --pF dB % VCB = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 10 W IC = 250 mA f = 1.0 MHz f = 175 MHz 10 60 5.0 200 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1