VHB10-28S

VHB10-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28S is an NPN power transistor designed for 138-175 MHz VHF communications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter, 28 V operation • PG = 10 dB at 10W/175 MHz • Omnigold™ Metalization System • High VSWR capability B C E ØC E B MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O D H I J 1.0 A 65 V 35 V 4.0 V 13.0 W -65 ° C to +200 °C -65 °C to +150 °C 13.5 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10723 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE Cob PG ηC TC = 25°C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V PIN = 1.0 W POUT = 10 W IC = 200 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 5.0 200 15 10 60 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1