VHB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.
PACKAGE STYLE .500 6L FLG
C A
3
D
1
2x Ø N FU LL R
FEATURES:
• 175 MHz 12.5 V • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration
B G
2
.725/18,42 F
4
E
K H D IM A M IN IM U M
inches / m m
M L
J
I
M A XIM U M
inches / m m
.150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05
.160 / 4.06
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 20 A 36 V 18 V 36 V 4.0 V 270 W @ TC = 25 °C -65 °C to +200 ° C -65 °C to +150 °C 0.65 °C/W
B C D E F G H I J K L M N
.220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43
1 = Collecttor 2 = Base 3&4 = Emitter
ORDER CODE: ASI10719
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICES
TC = 25 °C
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 12.5 V
MINIMUM TYPICAL MAXIMUM
18 36 36 4.0 15
UNITS
V V V V mA
REV. C 1/2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
VHB100-12 ERROR! REFERENCE SOURCE NOT FOUND.
CHARACTERISTICS
SYMBOL
hFE COB PG ηC VCE = 5.0 V
TC = 25 °C
NONETEST CONDITIONS
IC = 5.0 A f = 1.0 MHz POUT = 100 W f = 175 MHz
MINIMUM TYPICAL MAXIMUM
10 100 390 6.0 60
UNITS
--pF dB %
VCB = 12.5 V VCC = 12.5 V PIN = 25 W
IMPEDANCE DATA
FREQ 175 MHz ZIN (Ω) 1.05 – j0.9 ZCL (Ω) 0.5 – j1.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C 2/2
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