VHB25-12S_07

VHB25-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W DIM A B C D E F G H I J D #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10715 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC IC = 50 mA IC = 15 mA IE = 5.0 mA VCB = 28 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 5.0 UNITS V V V mA --pF dB % IC = 250 mA f = 1.0 MHz POUT = 25 W f = 175 MHz 20 --110 VCB = 12.5 V VCE = 12.5 V 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB25-12S IMPEDANCE DATA POUT = 25 W VCE = 12.5 V FREQ ZIN (Ω) 135 MHz 0.9 – J0.5 150 MHz 0.9 + J0.3 175 MHz 1.0 + J0.4 ZCL (Ω) 2.2 + J0.8 2.1 + J0.9 1.8 + J1.1 .112x45° A B ØC D H I J #8-32 UNC-2A F E G DIM A B C D E F G H I J M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2