VHB25-28F

VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG .112 x 45° A FEATURES: • Common Emitter – Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System F B E C E C D E Ø.125 NOM. FULL R J .125 B MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG θJC 4.0 A 65 V 4.0 V 35 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.4 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm I GH MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10724 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob fT PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VBE = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V VCC = 28 V IC = 200 mA POUT = 25 W IC = 200 mA f = 1.0 MHz f = 100 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 35.0 --250 50 8.5 60 UNITS V V V mA --pF MHz dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 1/1