VHB25-28S_07

VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C E ØC FEATURES: • Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A DIM #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm 36 V 18 V 4.0 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.4 °C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10725 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 25 W IC = 200 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 35 --250 8.5 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1