VHB40-28F

VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability. PACKAGE STYLE .380 4L FLG .112 x 45° A B E C Ø.125 NOM. FULL R J .125 FEATURES: • 175 MHz 28 V Class C • Efficiency 60% min • POUT = 40 W @ 7.6 dB • Omnigold™ Metalization System B C D F E E I GH MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.0 A 65 V 35 V 4.0 V 60 W -65 °C to +200 °C -65 °C to +150 °C 2.9 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10726 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO ICES hFE TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V IC = 500 mA MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 1.0 10 5.0 200 UNITS V V V V mA mA --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB40-28F Cob PG ηC VCB = 30 V VCE = 28 V POUT = 40 W PIN = 7.0 W f = 1.0 MHz f = 175 MHz 7.6 60 65 pF dB % IMPEDANCE DATA VCE = 28 V f = 175 MHz PIN (W) 2 4 6 8 POUT = (W) 28.5 43.0 53.0 60.5 ZIN (Ω) 0.85 + j1.20 1.05 + j1.32 1.01 + j1.42 1.05 + j1.35 ZCL = (Ω) 3.25 + j7.05 4.45 + j5.40 5.25 + j4.42 5.45 + j4.12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2