VHB50-28F_07

VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG B .112 x 45° A E C Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System B C D F E E I GH MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 6.5 A 65 V 35 V 4.0 V 75W -65 °C to +200 °C -65 °C to +150 °C 2.3 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10728 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V PIN = 12 W POUT =50 W IC = 500 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 10 150 80 6.0 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 VHB50-28F ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA FREQ. 150 MHz POUT = 60 W VCE = 28 V ZIN (Ω) 1.0 + j2.0 ZCL (Ω) 4.0 – j3.69 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2