VHB50-28S_07

VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD .112x45° A B C E ØC FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System • PG = 7.0 dB at 60 W/150 MHz E B D H I J #8-32 UNC-2A F E G MAXIMUM RATINGS DIM M INIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG θJC 6.5 A 65 V 35 V 4.0 V 75W -65 °C to +200 °C -65 °C to +150 °C 2.3 °C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10730 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 10 150 80 UNITS V V V mA --pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. VHB50-28S CHARACTERISTICS SYMBOL PG ηC VCE = 28 V PIN = 12 W TC = 25 °C NONETEST CONDITIONS POUT =50 W f = 175 MHz MINIMUM TYPICAL MAXIMUM 6.0 60 UNITS dB % IMPEDANCE DATA FREQ 150 MHz POUT = 60 W VCE = 28 V ZIN (Ω) 1.0 + J2.0 ZCL (Ω) 4.0 – J3.9 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2