VHB80-12

VHB80-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB80-12 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: • Internal Input Matching Network • PG = 7.0 dB at 80 W/175 MHz • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG C A 2x ØN FU LL R D B E .725/18,42 F K M L M AX IM U M inche s / m m MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 20 A 36 V 16 V 36 V 4.0 V 230 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.75 °C/W D IM A B C D E F G H I J K L M N G H M IN IM U M inche s / m m J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 ORDER CODE: ASI10718 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG ηC IC = 50 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 80 W IC = 5.0 A f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 15 10 --380 7.0 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1