AS1004-2.5LP

Micropower Voltage Reference Features Description The AS1004 is a two-terminal precision band-gap voltage reference with a low turn-on current of 10 µA. Emulating a 1.235 V zener diode, the AS1004 operates more than three orders of magnitude of output current with minute output impedance and guaranteed stability. With an initial tolerance of ± 4 mV and guaranteed temperature performance, it is ideal for precision instrumentation, especially in low power applications. Being a low-voltage reference, the AS1004 is also well-suited as a reference for low-voltage power supply applications, especially in power supplies intended for low-voltage logic systems, laptop computers and other portable or battery operated equipment. The AS1004 is pin-for-pin compatible with the LT1004 and the LM385 and offers improved specifications over both the LM385 and the MP5010. It is also available as a 2.5 V reference with a guaranteed start-up current of 20 µA. AS1004 • • • • • • • • Low voltage reference 10 µA turn-on current for AS1004-1.2 20 µA turn-on current for AS1004-2.5 ± 4 mV (0.3 %) initial accuracy for AS1004-1.2 ± 20 mV (0.8 %) initial accuracy for AS1004-2.5 Guaranteed operation to 20 mA. Over three orders of magnitude of operating current! Temperature performance guaranteed Very low dynamic impedance Pin Configuration — TO-92 (LP) Top view SOIC (D) SOT-89 (S) N/C 1 2 3 4 8 7 6 5 CATHODE N/C ANODE N/C N/C CATHODE N/C CATHODE ANODE ANODE N/C ANODE CATHODE Ordering Information Description Temperature Range Order Codes TO-92 8-Pin Plastic SOIC SOT-89 © ASTEC Semiconductor 0 to 70° C 0 to 70° C 0 to 70° C 29 AS1004-1.2LP AS1004-1.2D AS1004-1.2S AS1004-2.5LP AS1004-2.5D AS1004-2.5S AS1004 Simplified Schematic Micropower Voltage Reference K R2 Q13 Q12 Q4 Q3 C2 R10 Q7 R4 Q11 C3 R11 Q5 Q10 Q1 C1 R12 Q9 Q14 Q8 R6 R7 Q6 A Absolute Maximum Ratings Parameter Symbol Rating Units Reverse Breakdown Current Forward Current Continuous Power Dissipation at 25° C TO-92 8LSOIC SOT-89 Maximum Junction Temp Storage Temperature Lead Temperature, Soldering 10 Seconds IZ IF PD 30 30 mA mA 775 750 1000 TJ TSTG TL 150 – 65 to 150 300 mW mW mW °C °C °C Recommended Conditions Parameter Symbol Rating Unit Typical Thermal Resistances Package θJA θJC Typical Derating Cathode Current IZ 100 µA TO-92 8L SOIC SOT-89 160° C/W 175° C/W 110° C/W 80° C/W 45° C/W 8° C/W 6.3 mW/°C 5.7 mW/°C 9.1 mW/°C ASTEC Semiconductor 30 Micropower Voltage Reference Electrical Characteristics AS1004 Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based on power dissipation and package thermal characteristics. Parameter Reverse Breakdown Voltage Symbol VZ Test Condition IZ = 100 µA, TJ = 25° C 0° C ≤ TA ≤ 70° C Average Temperature Coefficient Minimum Operating Current Reverse Breakdown Voltage Change With Current ∆ VZ / ∆ T IZ (min) ∆ VZ / ∆ I Z Imin ≤ IZ ≤ 1 mA Over Temperature 1 mA ≤ IZ ≤ 20 mA Over Temperature Reverse Dynamic Impedance ZZ IZ = 100 mA, f = 25 Hz Over Temperature Wide Band Noise Long Term Stability en ∆ VZ / ∆ T IZ = 100 µA 10 Hz ≤ f ≤ 10 KHz IZ = 100 µA TA = 25° C ± 0.1° C Imin ≤ IZ ≤ 20 mA Min AS1004-1.2 Typ Max 1.235 1.235 20 4 0.5 0.5 6.5 6.5 0.2 1 60 20 10 1 1.5 10 20 0.6 1.5 60 60 1.239 1.245 Min 2.480 2.470 AS1004-2.5 Typ Max 2.500 2.500 60 12 0.5 0.5 6.5 6.5 0.8 20 1 1.5 10 20 0.9 1.5 2.520 2.530 Unit V V ppm/°C µA mV mV mV mV Ω Ω µV ppm/kH 1.231 1.225 Typical Performance Curves Calculating Average Temperature Coefficient for the AS1004-1.2 Reference 1.245 AS1004-1.2 Reference Voltage vs. Ambient Temperature IZ = 100 µA ppm 0 0 0 ∆VREF V Z – Reference Voltage (V) mV % ∆T 1.240 -5 5000 0.5 1.235 -10 0 10 20 30 40 50 60 70 Temperature (°C) 0.025 mV/ °C 0.002 %/ °C 20 ppm/ °C Average Temperature Coefficient = ∆VREF ∆T 1.230 1.225 –55 –35 –15 5 25 45 65 85 TA – Ambient Temperature (°C) 105 125 Figure 1 ASTEC Semiconductor Figure 2 31 AS1004 Typical Performance Curves Micropower Voltage Reference Calculating Average Temperature Coefficient for the AS1004-2.5 Reference ppm mV 2.520 AS1004-2.5 Reference Voltage versus Ambient Temperature IZ = 100 µA 0 0 % 0 ∆VREF V Z – Reference Voltage (V) ∆T -5 5000 0.5 2.510 2.500 -10 0 10 20 30 40 50 60 70 Temperature (°C) 0.046 mV/ °C 0.004 %/ °C 37 ppm/ °C Average Temperature Coefficient = ∆VREF ∆T 2.490 2.480 –55 –35 –15 5 25 45 65 85 TA – Ambient Temperature (°C) 105 125 Figure 3 Figure 4 AS1004-1.2 Reverse Operating Characteristics 100 TA = –55° C to 125° C 100 AS1004-2.5 Reverse Operating Characteristics TA = –55° C to 125° C IR – Reverse Current (µA) 10 IR – Reverse Current (µA) 0 0.2 0.4 0.8 0.6 1 VR – Reverse Voltage (V) 1.2 1.4 10 1 1 0.1 0.1 0 0.5 1.0 1.5 2.0 VR – Reverse Voltage (V) 2.5 3.0 Figure 5 Figure 6 ASTEC Semiconductor 32 Micropower Voltage Reference Typical Performance Curves AS1004 AS1004-1.2 Change in Reference Voltage versus Reverse Current 16 TA = –55° C to 125° C ∆VZ – Change In Reference Voltage (mA) AS1004-2.5 Change in Reference Voltage versus Reverse Current 16 TA = –55° C to 125° C 12 ∆VZ – Change In Reference Voltage (mA) 0.1 1 10 IR – Reverse Current (mA) 100 12 8 8 4 4 0 0 –4 0.01 –4 0.01 0.1 1 10 IR – Reverse Current (mA) 100 Figure 7 Figure 8 AS1004-1.2 Transient Response 1.5 3 AS1004-2.5 Transient Response 1 OUTPUT Input and Output Voltage (V) 36 kΩ Input and Output Voltage (V) 2 OUTPUT 36 kΩ VI VO 0.5 VI VO 1 0 5 0 5 INPUT INPUT 0 0 50 t – Time (µs) 100 500 600 0 0 50 t – Time (µs) 100 500 600 Figure 9 Figure 10 ASTEC Semiconductor 33 AS1004 Typical Performance Curves Micropower Voltage Reference AS1004-1.2 Reverse Dynamic Impedance 10 k tZ = 100 µA TA = 25° C 10 k AS1004-2.5 Reverse Dynamic Impedance tZ = 100 µA TA = 25° C ZZ – Reference Impedance (Ω) 100 ZZ – Reference Impedance (Ω) 100 1k 1k 100 10 10 1 1 0.1 0.01 0.1 1 10 f = Frequency (kHz) 1k 0.1 0.01 0.1 1 10 f = Frequency (kHz) 100 1k Figure 11 Figure 12 Forward Characteristics 1.2 TA = 25° C Low Frequency Reverse Dynamic Impedance 100 TA = –55° C to 125° C f = 25 Hz 0.8 ZZ – Reference Impedance (Ω) V F – Forward Voltage (V) 10 0.4 1 0 0.01 0.1 1 10 IF = Forward Current (mA) 100 0.1 0.01 0.1 1 10 IZ – Reverse Current (mA) 100 Figure 13 Figure 14 ASTEC Semiconductor 34 Micropower Voltage Reference Typical Applications 1.235V Reference VIN 3k OUT AS1004-1.2 AS1004 2.5V Reference VIN 100 k OUT AS1004-2.5 Low Noise Reference VIN 100 k 22 Ω OUT AS1004-2.5 50 µF Figure 15 Figure 16 Figure 17 Variable Output Regulator V IN High Stability 5V Regulator VIN ≥ 8 V OUT 200 Ω + 10 µF 5k VIN LM317 VOUT ADJ VIN LM338 VOUT ADJ 5 V OUT 976 Ω, 1% 0.1 µF + 22 µF AS1004-2.5 AS1004-2.5 R≤ VV - – 1V 0.015 mA 324 Ω, 1% Figure 18 Figure 19 Lead Acid Low Battery Detector Micropower 10V Reference VIN = 12 V to 20 V LO = Battery Low 86.7 k 12 V 500 k 1M 7 + LM4250 + – 500 k AS1004-1.2 150 pF 3 2– 4 6 8 22 M 150 pF 3.5 M AS1004-1.2 500 k Figure 20 ASTEC Semiconductor Figure 21 35 AS1004 Notes Micropower Voltage Reference ASTEC Semiconductor 36