AT24C128Y1-10YI-2.7

Features • Low-voltage and Standard-voltage Operation • • • • • • • • • • • – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 3.6V) Internally Organized 16,384 x 8 and 32,768 x 8 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol 1 MHz (5V), 400 kHz (2.7V, 2.5V) and 100 kHz (1.8V) Compatibility Write Protect Pin for Hardware and Software Data Protection 64-byte Page Write Mode (Partial Page Writes Allowed) Self-timed Write Cycle (5 ms Typical) High Reliability – Endurance: One Million Write Cycles – Data Retention: 40 Years Automotive Grade, Extended Temperature and Lead-Free Devices Available 8-lead JEDEC PDIP, 8-lead JEDEC and EIAJ SOIC, 8-lead MAP, 8-lead TSSOP and 8-ball dBGA2TM Packages 2-wire Serial EEPROMs 128K (16,384 x 8) 256K (32,768 x 8) Description The AT24C128/256 provides 131,072/262,144 bits of serial electrically erasable and programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8 bits each. The device’s cascadable feature allows up to 4 devices to share a common 2-wire bus. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The devices are available in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead MAP (24C128), 8-lead TSSOP and 8-ball dBGA2 packages. In addition, the entire family is available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 3.6V) versions. AT24C128 AT24C256 Pin Configurations Pin Name Function 8-lead PDIP A0 A1 NC GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA A0 A1 NC GND 8-lead SOIC 1 2 3 4 8 7 6 5 VCC WP SCL SDA A0 - A1 SDA SCL WP NC GND Address Inputs Serial Data Serial Clock Input Write Protect No Connect Ground 8-ball dBGA2 VCC WP SCL SDA 8 7 6 5 1 2 3 4 8-lead TSSOP A0 A1 NC GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA A0 A1 NC GND Bottom View 8-lead MAP VCC WP SCL SDA 8 7 6 5 1 2 3 4 A0 A1 NC GND Bottom View Rev. 0670K–SEEPR–7/03 1 Absolute Maximum Ratings* Operating Temperature.................................. -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C Voltage on Any Pin with Respect to Ground .....................................-1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V DC Output Current........................................................ 5.0 mA *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Block Diagram 2 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 Pin Description SERIAL CLOCK (SCL): T he SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open collector devices. DEVICE/PAGE ADDRESSES (A1, A0): The A1 and A0 pins are device address inputs that are hardwired or left not connected for hardware compatibility with AT24C32/64. When the pins are hardwired, as many as four 128K/256K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). When the pins are not hardwired, the default A1 and A0 are zero. WRITE PROTECT (WP): The write protect input, when tied to GND, allows normal write operations. When WP is tied high to VCC, all write operations to the memory are inhibited. If left unconnected, WP is internally pulled down to GND. Switching WP to VCC prior to a write operation creates a software write protect function. Memory Organization AT24C128/256, 128K/256K SERIAL EEPROM: The 128K/256K is internally organized as 256/512 pages of 64-bytes each. Random word addressing requires a 14/15-bit data word address. 3 0670K–SEEPR–7/03 Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V. Symbol CI/O CIN Note: Test Condition Input/Output Capacitance (SDA) Input Capacitance (A 0, A1, SCL) 1. This parameter is characterized and is not 100% tested. Max 8 6 Units pF pF Conditions VI/O = 0V VIN = 0V DC Characteristics(1) Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted). Symbol VCC1 VCC2 VCC3 ICC1 ICC2 ISB1 Parameter Supply Voltage Supply Voltage Supply Voltage Supply Current Supply Current Standby Current (1.8V option) Standby Current (2.5V option) Standby Current (5.0V option) Input Leakage Current Output Leakage Current Input Low Level(1) Input High Level(1) Output Low Level Output Low Level VCC = 3.0V VCC = 1.8V IOL = 2.1 mA IOL = 0.15 mA VCC = 5.0V VCC = 5.0V VCC = 1.8V VCC = 3.6V VCC = 2.5V VCC = 5.5V VCC = 4.5 - 5.5V VIN = VCC or VSS VOUT = VCC or VSS -0.6 VCC x 0.7 READ at 400 kHz WRITE at 400 kHz VIN = VCC or VSS Test Condition Min 1.8 2.5 4.5 1.0 2.0 Typ Max 3.6 5.5 5.5 2.0 3.0 0.2 2.0 0.5 VIN = VCC or VSS VIN = VCC or VSS 0.10 0.05 6.0 6.0 3.0 3.0 VCC x 0.3 VCC + 0.5 0.4 0.2 µA µA µA V V V V µA Units V V V mA mA µA ISB2 ISB3 ILI ILO VIL VIH VOL2 VOL1 Note: 1. VIL min and VIH max are reference only and are not tested. 4 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 AC Characteristics Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless otherwise noted). Test conditions are listed in Note 2. 1.8-volt Symbol fSCL tLOW tHIGH tAA tBUF tHD.STA tSU.STA tHD.DAT tSU.DAT tR tF tSU.STO tDH tWR Endurance(1) Notes: Parameter Clock Frequency, SCL Clock Pulse Width Low Clock Pulse Width High Clock Low to Data Out Valid Time the bus must be free before a new transmission can start(1) Start Hold Time Start Set-up Time Data In Hold Time Data In Set-up Time Inputs Rise Time(1) Inputs Fall Time (1) 2.5-volt Min Max 400 1.3 0.6 5.0-volt Min Max 1000 0.4 0.4 Units kHz µs µs 0.55 µs µs µs µs µs ns 0.3 100 0.25 50 µs ns µs ns 10 ms Write Cycles Min Max 100 4.7 4.0 0.1 4.7 4.0 4.7 0 200 1.0 300 4.7 100 20 4.5 0.05 1.3 0.6 0.6 0 100 0.9 0.05 0.5 0.25 0.25 0 100 0.3 300 0.6 50 10 1,000,000(3) Stop Set-up Time Data Out Hold Time Write Cycle Time 5.0V, 25°C, Page Mode 1. This parameter is characterized and is not 100% tested. 2. AC measurement conditions: RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V) Input pulse voltages: 0.3 VCC to 0.7 VCC Input rise and fall times: ≤50 ns Input and output timing reference voltages: 0.5 VCC 3. The AT24C128/256 bearing the process letter “B” in the package marking (lower right corner on the top side of the package), guarantees 1 million write cycle endurance (1.8 - 3.6V). 5 0670K–SEEPR–7/03 Device Operation CLOCK and DATA TRANSITIONS: T he SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (refer to Data Validity timing diagram). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (refer to Start and Stop Definition timing diagram). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (refer to Start and Stop Definition timing diagram). ACKNOWLEDGE: A ll addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowledge that it has received each word. STANDBY MODE: The AT24C128/256 features a low power standby mode which is enabled: a) upon power-up and b) after the receipt of the STOP bit and the completion of any internal operations. MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then (c) create a start condition as SDA is high. 6 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O) Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O) SCL SDA 8th BIT WORD n ACK tWR STOP CONDITION (1) START CONDITION Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle. 7 0670K–SEEPR–7/03 Data Validity Start and Stop Definition Output Acknowledge 8 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 Device Addressing The 128K/256K EEPROM requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 1). The device address word consists of a mandatory one, zero sequence for the first five most significant bits as shown. This is common to all 2-wire EEPROM devices. The 128K/256K uses the two device address bits A1, A0 to allow as many as four devices on the same bus. These bits must compare to their corresponding hardwired input pins. The A1 and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the pins are allowed to float. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the device will return to a standby state. DATA SECURITY: The AT24C128/256 has a hardware data protection scheme that allows the user to write protect the whole memory when the WP pin is at VCC. Write Operations BYTE WRITE: A write operation requires two 8-bit data word addresses following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero. The addressing device, such as a microcontroller, then must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (refer to Figure 2). PAGE WRITE: The 128K/256K EEPROM is capable of 64-byte page writes. A page write is initiated the same way as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to 63 more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (refer to Figure 3). The data word address lower 6 bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 64 data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. The address “roll over” during write is from the last byte of the current page to the first byte of the same page. ACKNOWLEDGE POLLING: O nce the internally-timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero, allowing the read or write sequence to continue. 9 0670K–SEEPR–7/03 Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read. C URRENT ADDRESS READ: T he internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page, to the first byte of the first page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input zero but does generate a following stop condition (refer to Figure 4). RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 5). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 6). Figure 1. Device Address Figure 2. Byte Write 10 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 Figure 3. Page Write Notes: (* = DON’T CARE bit) († = DON’T CARE bit for the 128K) Figure 4. Current Address Read Figure 5. Random Read Notes: (* = DON’T CARE bit) († = DON’T CARE bit for the 128K) Figure 6. Sequential Read 11 0670K–SEEPR–7/03 AT24C128 Ordering Information Ordering Code AT24C128-10PI-2.7 AT24C128N-10SI-2.7 AT24C128W-10SI-2.7 AT24C128U2-10UI-2.7 AT24C128Y1-10YI-2.7 AT24C128-10TI-2.7 AT24C128-10PI-1.8 AT24C128N-10SI-1.8 AT24C128W-10SI-1.8 AT24C128U2-10UI-1.8 AT24C128Y1-10YI-1.8 AT24C128-10TI-1.8 AT24C128N-10SJ-2.7 AT24C128N-10SJ-1.8 Note: Package 8P3 8S1 8S2 8U2-1 8Y1 8A2 8P3 8S1 8S2 8U2-1 8Y1 8A2 8S1 8S1 Operation Range Industrial (-40°C to 85°C) Industrial (-40°C to 85°C) Lead-Free/Industrial Temperature (-40°C to 85°C) For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables. Package Type 8P3 8S1 8S2 8U2-1 8Y1 8A2 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC) 8-ball, die Ball Grid Array Package (dBGA2) 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options -2.7 -1.8 Low-voltage (2.7V to 5.5V) Low-voltage (1.8V to 3.6V) 12 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 AT24C256 Ordering Information Ordering Code AT24C256-10PI-2.7 AT24C256N-10SI-2.7 AT24C256W-10SI-2.7 AT24C256U2-10UI-2.7 AT24C256-10TI-2.7 AT24C256-10PI-1.8 AT24C256N-10SI-1.8 AT24C256W-10SI-1.8 AT24C256U2-10UI-1.8 AT24C256-10TI-1.8 AT24C256N-10SJ-2.7 AT24C256N-10SJ-1.8 Note: Package 8P3 8S1 8S2 8U2-1 8A2 8P3 8S1 8S2 8U2-1 8A2 8S1 8S1 Operation Range Industrial (-40°C to 85°C) Industrial (-40°C to 85°C) Lead-Free/Industrial Temperature (-40°C to 85°C) For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables. Package Type 8P3 8S1 8S2 8U2-1 8A2 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC) 8-ball, die Ball Grid Array Package (dBGA2) 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options -2.7 -1.8 Low-voltage (2.7V to 5.5V) Low-voltage (1.8V to 3.6V) 13 0670K–SEEPR–7/03 Packaging Information 8P3 – PDIP E E1 1 N Top View c eA End View D e D1 A2 A SYMBOL COMMON DIMENSIONS (Unit of Measure = inches) MIN NOM MAX NOTE A A2 b b2 b3 c D 0.115 0.014 0.045 0.030 0.008 0.355 0.005 0.300 0.240 0.310 0.250 0.100 BSC 0.300 BSC 0.115 0.130 0.130 0.018 0.060 0.039 0.010 0.365 0.210 0.195 0.022 0.070 0.045 0.014 0.400 2 5 6 6 3 3 b2 b3 4 PLCS L D1 E E1 e eA L b 0.325 0.280 4 3 Side View 4 0.150 2 Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information. 2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3. 3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch. 4. E and eA measured with the leads constrained to be perpendicular to datum. 5. Pointed or rounded lead tips are preferred to ease insertion. 6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm). 01/09/02 2325 Orchard Parkway San Jose, CA 95131 TITLE 8P3, 8-lead, 0.300" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. 8P3 REV. B R 14 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 8S1 – JEDEC SOIC 3 2 1 H N Top View e B A D Side View SYMBOL A COMMON DIMENSIONS (Unit of Measure = mm) MIN – – – – – NOM – – – – – 1.27 BSC – – – – 6.20 1.27 MAX 1.75 0.51 0.25 5.00 4.00 NOTE A2 C B C D E L E e H L End View Note: This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc. 10/10/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. A R 15 0670K–SEEPR–7/03 8S2 – EIAJ SOIC 1 H N Top View e b A D Side View SYMBOL COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX NOTE A 1.78 0.05 0.35 0.18 5.13 5.13 7.62 0.51 1.27 BSC 2.03 0.33 0.51 0.25 5.38 5.41 8.38 0.89 4 2, 3 5 5 A1 L E C A1 b C D E End View H L e Notes: 1. 2. 3. 4. 5. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information. Mismatch of the upper and lower dies and resin burrs aren't included. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. Determines the true geometric position. Values b,C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/-0.005 mm. 5/2/02 TITLE 8S2, 8-lead, 0.209" Body, Plastic Small Outline Package (EIAJ) DRAWING NO. REV. B R 2325 Orchard Parkway San Jose, CA 95131 8S2 16 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 8U2-1 – dBGA2 A1 BALL PAD CORNER D 1. b E A1 Top View A2 A A1 BALL PAD CORNER Side View 2 1 A B e C D (e1) d (d1) COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A1 A2 b D 1. Dimension 'b' is measured at the maximum solder ball diameter. This drawing is for general information only. E e e1 d d1 MIN 0.81 0.15 0.40 0.25 NOM 0.91 0.20 0.45 0.30 2.35 BSC 3.73 BSC 0.75 BSC 0.74 REF 0.75 BSC 0.80 REF MAX 1.00 0.25 0.50 0.35 NOTE Bottom View 8 Solder Balls 6/24/03 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch, Small Die Ball Grid Array Package (dBGA2) DRAWING NO. PO8U2-1 REV. A R 17 0670K–SEEPR–7/03 8Y1 – MAP PIN 1 INDEX AREA A 1 2 3 4 PIN 1 INDEX AREA E1 D D1 L 8 E A1 b 7 6 5 e Top View End View Bottom View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A A A1 MIN – 0.00 4.70 2.80 0.85 0.85 0.25 NOM – – 4.90 3.00 1.00 1.00 0.30 0.65 TYP MAX 0.90 0.05 5.10 3.20 1.15 1.15 0.35 NOTE Side View D E D1 E1 b e L 0.50 0.60 0.70 2/28/03 2325 Orchard Parkway San Jose, CA 95131 TITLE 8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package (MAP) Y1 DRAWING NO. 8Y1 REV. C R 18 AT24C128/256 0670K–SEEPR–7/03 AT24C128/256 8A2 – TSSOP 3 21 Pin 1 indicator this corner E1 E L1 N L Top View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN 2.90 NOM 3.00 6.40 BSC 4.30 – 0.80 0.19 4.40 – 1.00 – 0.65 BSC 0.45 0.60 1.00 REF 0.75 4.50 1.20 1.05 0.30 4 3, 5 MAX 3.10 NOTE 2, 5 b A D E E1 A e D A2 A2 b e Side View L L1 Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A2 REV. B 19 0670K–SEEPR–7/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 e-mail literature@atmel.com Web Site http://www.atmel.com Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2003 . A ll rights reserved. Atmel® and combinations thereof, are the registered trademarks, and dBGA2 ™ is the trademark of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 0670K–SEEPR–7/03 xM