AT45DB081B-CNI

Features • • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory Supports Page and Block Erase Operations Two 264-byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications Low Power Dissipation – 4 mA Active Read Current Typical – 2 µA CMOS Standby Current Typical Hardware Data Protection Feature 100% Compatible to AT45DB081 and AT45DB081A 5.0V-tolerant Inputs: SI, SCK, CS, RESET and WP Pins Commercial and Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Options 8-megabit 2.5-volt Only or 2.7-volt Only DataFlash® AT45DB081B Description The AT45DB081B is a 2.5-volt or 2.7-volt only, serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes each. In addition to the main memory, the AT45DB081B also contains two SRAM data buffers of 264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as writing a continuous data stream. Pin Configurations Pin Name CS SCK SI SO WP RESET RDY/BUSY Function Chip Select Serial Clock Serial Input Serial Output Hardware Page Write Protect Pin Chip Reset Ready/Busy GND NC NC CS SCK SI SO NC NC NC NC NC NC NC RDY/BUSY RESET WP NC NC VCC GND NC NC NC CS SCK SI SO 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TSOP Top View Type 1 28 27 26 25 24 23 22 21 20 19 18 17 16 15 NC NC NC NC NC NC NC NC NC NC NC NC NC NC SOIC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC NC NC WP RESET RDY/BUSY NC NC NC NC NC NC NC NC CBGA Top View through Package 1 2 3 CASON Top View through Package SI SCK RESET CS 1 2 3 4 A NC NC VCC SO 7 GND 6 VCC 5 WP 8 B SCK GND C CS RDY/BSY WP D SO SI NC RESET NC E NC Rev. 2225I–DFLSH–9/05 1 EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low power are essential. The device operates at clock frequencies up to 20 MHz with a typical active read current consumption of 4 mA. To allow for simple in-system reprogrammability, the AT45DB081B does not require high input voltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT45DB081B is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming cycles are self-timed, and no separate erase cycle is required before programming. When the device is shipped from Atmel, the most significant page of the memory array may not be erased. In other words, the contents of the last page may not be filled with FFH. Block Diagram WP FLASH MEMORY ARRAY PAGE (264 BYTES) BUFFER 1 (264 BYTES) BUFFER 2 (264 BYTES) SCK CS RESET VCC GND RDY/BUSY I/O INTERFACE SI SO Memory Array To provide optimal flexibility, the memory array of the AT45DB081B is divided into three levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture Diagram illustrates the breakdown of each level and details the number of pages per sector and block. All program operations to the DataFlash occur on a page-by-page basis; however, the optional erase operations can be performed at the block or page level. 2 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Memory Architecture Diagram SECTOR ARCHITECTURE SECTOR 0 = 8 Pages 2112 bytes (2K + 64) SECTOR 1 = 248 Pages 65,472 bytes (62K + 1984) BLOCK ARCHITECTURE SECTOR 0 BLOCK 0 BLOCK 1 PAGE ARCHITECTURE 8 Pages PAGE 0 PAGE 1 SECTOR 1 BLOCK 2 BLOCK 0 SECTOR 2 = 256 Pages 67,584 bytes (64K + 2K) PAGE 6 PAGE 7 PAGE 8 BLOCK 30 BLOCK 31 SECTOR 3 = 512 Pages 135,168 bytes (128K + 4K) SECTOR 4 = 512 Pages 135,168 bytes (128K + 4K) SECTOR 2 BLOCK 33 BLOCK 1 BLOCK 32 PAGE 9 PAGE 14 PAGE 15 BLOCK 62 BLOCK 63 BLOCK 64 SECTOR 8 = 512 Pages 135,168 bytes (128K + 4K) BLOCK 65 PAGE 16 PAGE 17 PAGE 18 SECTOR 9 = 512 Pages 135,168 bytes (128K + 4K) PAGE 4093 BLOCK 510 BLOCK 511 PAGE 4094 PAGE 4095 Block = 2112 bytes (2K + 64) Page = 264 bytes (256 + 8) Device Operation The device operation is controlled by instructions from the host processor. The list of instructions and their associated opcodes are contained in Tables 1 through 4. A valid instruction starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. While the CS pin is low, toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory address location through the SI (serial input) pin. All instructions, addresses and data are transferred with the most significant bit (MSB) first. Buffer addressing is referenced in the datasheet using the terminology BFA8 - BFA0 to denote the nine address bits required to designate a byte address within a buffer. Main memory addressing is referenced using the terminology PA11 - PA0 and BA8 - BA0 where PA11 - PA0 denotes the 12 address bits required to designate a page address and BA8 - BA0 denotes the nine address bits required to designate a byte address within the page. Read Commands By specifying the appropriate opcode, data can be read from the main memory or from either one of the two data buffers. The DataFlash supports two categories of read modes in relation to the SCK signal. The differences between the modes are in respect to the inactive state of the SCK signal as well as which clock cycle data will begin to be output. The two categories, which are comprised of four modes total, are defined as Inactive Clock Polarity Low or Inactive Clock Polarity High and SPI Mode 0 or SPI Mode 3. A separate opcode (refer to Table 1 on page 10 for a complete list) is used to select which category will be used for reading. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock cycle sequences for each mode. CONTINUOUS ARRAY READ: By supplying an initial starting address for the main memory array, the Continuous Array Read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing information or control signals need to be provided. The DataFlash incorporates an internal address counter that will automatically increment on every clock 3 2225I–DFLSH–9/05 cycle, allowing one continuous read operation without the need of additional address sequences. To perform a continuous read, an opcode of 68H or E8H must be clocked into the device followed by 24 address bits and 32 don’t care bits. The first three bits of the 24-bit address sequence are reserved for upward and downward compatibility to larger and smaller density devices (see Notes under “Command Sequence for Read/Write Operations” diagram). The next 12 address bits (PA11 - PA0) specify which page of the main memory array to read, and the last nine bits (BA8 - BA0) of the 24-bit address sequence specify the starting byte address within the page. The 32 don’t care bits that follow the 24 address bits are needed to initialize the read operation. Following the 32 don’t care bits, additional clock pulses on the SCK pin will result in serial data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bits, the don’t care bits, and the reading of data. When the end of a page in main memory is reached during a Continuous Array Read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin. The maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR specification. The Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged. MAIN MEMORY PAGE READ: A Main Memory Page Read allows the user to read data directly from any one of the 4096 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page read, an opcode of 52H or D2H must be clocked into the device followed by 24 address bits and 32 don’t care bits. The first three bits of the 24-bit address sequence are reserved bits, the next 12 address bits (PA11 - PA0) specify the page address, and the next nine address bits (BA8 - BA0) specify the starting byte address within the page. The 32 don’t care bits which follow the 24 address bits are sent to initialize the read operation. Following the 32 don’t care bits, additional pulses on SCK result in serial data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the address bits, the don’t care bits, and the reading of data. When the end of a page in main memory is reached during a Main Memory Page Read, the device will continue reading at the beginning of the same page. A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin. BUFFER READ: Data can be read from either one of the two buffers, using different opcodes to specify which buffer to read from. An opcode of 54H or D4H is used to read data from buffer 1, and an opcode of 56H or D6H is used to read data from buffer 2. To perform a Buffer Read, the eight bits of the opcode must be followed by 15 don’t care bits, nine address bits, and eight don’t care bits. Since the buffer size is 264 bytes, nine address bits (BFA8 - BFA0) are required to specify the first byte of data to be read from the buffer. The CS pin must remain low during the loading of the opcode, the address bits, the don’t care bits, and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin. STATUS REGISTER READ: The status register can be used to determine the device’s Ready/Busy status, the result of a Main Memory Page to Buffer Compare operation, or the device density. To read the status register, an opcode of 57H or D7H must be 4 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B loaded into the device. After the last bit of the opcode is shifted in, the eight bits of the status register, starting with the MSB (bit 7), will be shifted out on the SO pin during the next eight clock cycles. The five most significant bits of the status register will contain device information, while the remaining three least-significant bits are reserved for future use and will have undefined values. After bit 0 of the status register has been shifted out, the sequence will repeat itself (as long as CS remains low and SCK is being toggled) starting again with bit 7. The data in the status register is constantly updated, so each repeating sequence will output new data. Status Register Format Bit 7 RDY/BUSY Bit 6 COMP Bit 5 1 Bit 4 0 Bit 3 0 Bit 2 1 Bit 1 X Bit 0 X Ready/Busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device is not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy state. The user can continuously poll bit 7 of the status register by stopping SCK at a low level once bit 7 has been output. The status of bit 7 will continue to be output on the SO pin, and once the device is no longer busy, the state of SO will change from 0 to 1. There are eight operations which can cause the device to be in a busy state: Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare, Buffer to Main Memory Page Program with Built-in Erase, Buffer to Main Memory Page Program without Built-in Erase, Page Erase, Block Erase, Main Memory Page Program, and Auto Page Rewrite. The result of the most recent Main Memory Page to Buffer Compare operation is indicated using bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches the data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page does not match the data in the buffer. The device density is indicated using bits 5, 4, 3 and 2 of the status register. For the AT45DB081B, the four bits are 1, 0, 0 and 1. The decimal value of these four binary bits does not equate to the device density; the three bits represent a combinational code relating to differing densities of Serial DataFlash devices, allowing a total of sixteen different density configurations. Program and Erase Commands BUFFER WRITE: Data can be shifted in from the SI pin into either buffer 1 or buffer 2. To load data into either buffer, an 8-bit opcode, 84H for buffer 1 or 87H for buffer 2, must be followed by 15 don’t care bits and nine address bits (BFA8 - BFA0). The nine address bits specify the first byte in the buffer to be written. The data is entered following the address bits. If the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high transition is detected on the CS pin. BUFFER TO MAIN MEMORY PAGE PROGRAM WITH BUILT-IN ERASE: Data written into either buffer 1 or buffer 2 can be programmed into the main memory. To start the operation, an 8-bit opcode, 83H for buffer 1 or 86H for buffer 2, must be followed by the three reserved bits, 12 address bits (PA11 - PA0) that specify the page in the main memory to be written, and nine additional don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the status register will indicate that the part is busy. 5 2225I–DFLSH–9/05 BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: A previously erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 88H for buffer 1 or 89H for buffer 2, must be followed by the three reserved bits, 12 address bits (PA11 - PA0) that specify the page in the main memory to be written, and nine additional don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the data stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that is being programmed has been previously erased. The programming of the page is internally self-timed and should take place in a maximum time of tP. During this time, the status register will indicate that the part is busy. Successive page programming operations without doing a page erase are not recommended. In other words, changing bytes within a page from a “1” to a “0” during multiple page programming operations without erasing that page is not recommended. PAGE ERASE: The optional Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized at a later time. To perform a Page Erase, an opcode of 81H must be loaded into the device, followed by three reserved bits, 12 address bits (PA11 - PA0), and nine don’t care bits. The 12 address bits are used to specify which page of the memory array is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected page to 1s. The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the status register will indicate that the part is busy. BLOCK ERASE: A block of eight pages can be erased at one time allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized to reduce programming times when writing large amounts of data to the device. To perform a Block Erase, an opcode of 50H must be loaded into the device, followed by three reserved bits, nine address bits (PA11 - PA3), and 12 don’t care bits. The nine address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight pages to 1s. The erase operation is internally self-timed and should take place in a maximum time of tBE. During this time, the status register will indicate that the part is busy. Block Erase Addressing PA11 PA10 PA9 PA8 PA7 PA6 PA5 PA4 PA3 PA2 PA1 PA0 Block 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 0 0 • • • 1 1 1 1 0 0 1 1 • • • 0 0 1 1 0 1 0 1 • • • 0 1 0 1 X X X X • • • X X X X X X X X • • • X X X X X X X X • • • X X X X 0 1 2 3 • • • 508 509 510 511 6 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B MAIN MEMORY PAGE PROGRAM THROUGH BUFFER: This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase operations. Data is first shifted into buffer 1 or buffer 2 from the SI pin and then programmed into a specified page in the main memory. To initiate the operation, an 8-bit opcode, 82H for buffer 1 or 85H for buffer 2, must be followed by the three reserved bits and 21 address bits. The 12 most significant address bits (PA11 - PA0) select the page in the main memory where data is to be written, and the next nine address bits (BFA8 - BFA0) select the first byte in the buffer to be written. After all address bits are shifted in, the part will take data from the SI pin and store it in one of the data buffers. If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory. Both the erase and the programming of the page are internally self-timed and should take place in a maximum of time tEP. During this time, the status register will indicate that the part is busy. Additional Commands MAIN MEMORY PAGE TO BUFFER TRANSFER: A page of data can be transferred from the main memory to either buffer 1 or buffer 2. To start the operation, an 8-bit opcode, 53H for buffer 1 and 55H for buffer 2, must be followed by the three reserved bits, 12 address bits (PA11 - PA0) which specify the page in main memory that is to be transferred, and nine don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode, the address bits, and the don’t care bits from the SI pin. The transfer of the page of data from the main memory to the buffer will begin when the CS pin transitions from a low to a high state. During the transfer of a page of data (tXFR), the status register can be read to determine whether the transfer has been completed or not. MAIN MEMORY PAGE TO BUFFER COMPARE: A page of data in main memory can be compared to the data in buffer 1 or buffer 2. To initiate the operation, an 8-bit opcode, 60H for buffer 1 and 61H for buffer 2, must be followed by 24 address bits consisting of the three reserved bits, 12 address bits (PA11 - PA0) which specify the page in the main memory that is to be compared to the buffer, and nine don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode, the address bits, and the don’t care bits from the SI pin. On the low-to-high transition of the CS pin, the 264 bytes in the selected main memory page will be compared with the 264 bytes in buffer 1 or buffer 2. During this time (tXFR), the status register will indicate that the part is busy. On completion of the compare operation, bit 6 of the status register is updated with the result of the compare. AUTO PAGE REWRITE: This mode is only needed if multiple bytes within a page or multiple pages of data are modified in a random fashion. This mode is a combination of two operations: Main Memory Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer 2) is programmed back into its original page of main memory. To start the rewrite operation, an 8-bit opcode, 58H for buffer 1 or 59H for buffer 2, must be followed by the three reserved bits, 12 address bits (PA11 - PA0) that specify the page in main memory to be rewritten, and nine additional don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory. The operation is internally self-timed and should take place in a maximum time of tEP. During this time, the status register will indicate that the part is busy. 7 2225I–DFLSH–9/05 If a sector is programmed or reprogrammed sequentially page-by-page, then the programming algorithm shown in Figure 1 on page 26 is recommended. Otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in Figure 2 on page 27 is recommended. Each page within a sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations in that sector. Operation Mode Summary The modes described can be separated into two groups – modes which make use of the Flash memory array (Group A) and modes which do not make use of the Flash memory array (Group B). Group A modes consist of: 1. Main Memory Page Read 2. Main Memory Page to Buffer 1 (or 2) Transfer 3. Main Memory Page to Buffer 1 (or 2) Compare 4. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase 5. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase 6. Page Erase 7. Block Erase 8. Main Memory Page Program through Buffer 9. Auto Page Rewrite Group B modes consist of: 1. Buffer 1 (or 2) Read 2. Buffer 1 (or 2) Write 3. Status Register Read If a Group A mode is in progress (not fully completed) then another mode in Group A should not be started. However, during this time in which a Group A mode is in progress, modes in Group B can be started. This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream. While data is being programmed into main memory from buffer 1, data can be loaded into buffer 2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. Pin Descriptions SERIAL INPUT (SI): The SI pin is an input-only pin and is used to shift data into the device. The SI pin is used for all data input including opcodes and address sequences. SERIAL OUTPUT (SO): The SO pin is an output-only pin and is used to shift data out from the device. SERIAL CLOCK (SCK): The SCK pin is an input-only pin and is used to control the flow of data to and from the DataFlash. Data is always clocked into the device on the rising edge of SCK and clocked out of the device on the falling edge of SCK. CHIP SELECT (CS): The DataFlash is selected when the CS pin is low. When the device is not selected, data will not be accepted on the SI pin, and the SO pin will remain in a high-impedance state. A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition on the CS pin is required to end an operation. 8 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B WRITE PROTECT: If the WP pin is held low, the first 256 pages of the main memory cannot be reprogrammed. The only way to reprogram the first 256 pages is to first drive the protect pin high and then use the program commands previously mentioned. If this pin and feature are not utilized it is recommended that the WP p in be driven high externally. RESET: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET pin. Normal operation can resume once the RESET pin is brought back to a high level. The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET pin during power-on sequences. If this pin and feature are not utilized it is recommended that the RESET pin be driven high externally. READY/BUSY: This open drain output pin will be driven low when the device is busy in an internally self-timed operation. This pin, which is normally in a high state (through a 1 kΩ external pull-up resistor), will be pulled low during programming operations, compare operations, and during page-to-buffer transfers. The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. Power-on/Reset State When power is first applied to the device, or when recovering from a reset condition, the device will default to SPI Mode 3. In addition, the SO pin will be in a high-impedance state, and a high-to-low transition on the CS pin will be required to start a valid instruction. The SPI mode will be automatically selected on every falling edge of CS b y sampling the inactive clock state. After power is applied and VCC is at the minimum datasheet value, the system should wait 20 ms before an operational mode is started. 9 2225I–DFLSH–9/05 Table 1. Read Commands Command Continuous Array Read SPI Mode 0 or 3 Inactive Clock Polarity Low or High Main Memory Page Read SPI Mode 0 or 3 Inactive Clock Polarity Low or High Buffer 1 Read SPI Mode 0 or 3 Inactive Clock Polarity Low or High Buffer 2 Read SPI Mode 0 or 3 Inactive Clock Polarity Low or High Status Register Read SPI Mode 0 or 3 D7H D6H 57H D4H 56H D2H 54H E8H 52H SCK Mode Inactive Clock Polarity Low or High Opcode 68H Table 2. Program and Erase Commands Command Buffer 1 Write Buffer 2 Write Buffer 1 to Main Memory Page Program with Built-in Erase Buffer 2 to Main Memory Page Program with Built-in Erase Buffer 1 to Main Memory Page Program without Built-in Erase Buffer 2 to Main Memory Page Program without Built-in Erase Page Erase Block Erase Main Memory Page Program through Buffer 1 Main Memory Page Program through Buffer 2 SCK Mode Any Any Any Any Any Any Any Any Any Any Opcode 84H 87H 83H 86H 88H 89H 81H 50H 82H 85H Table 3. Additional Commands Command Main Memory Page to Buffer 1 Transfer Main Memory Page to Buffer 2 Transfer Main Memory Page to Buffer 1 Compare Main Memory Page to Buffer 2 Compare Auto Page Rewrite through Buffer 1 Auto Page Rewrite through Buffer 2 Note: SCK Mode Any Any Any Any Any Any Opcode 53H 55H 60H 61H 58H 59H In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock Polarity Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3). 10 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Table 4. Detailed Bit-level Addressing Sequence Address Byte Reserved Reserved Reserved Address Byte Address Byte Additional Don’t Care Bytes Required N/A 4 Bytes N/A 1 Byte N/A 1 Byte N/A x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B N/A N/A N/A N/A 4 Bytes N/A N/A N/A N/A N/A N/A N/A N/A N/A 4 Bytes 1 Byte 1 Byte N/A B B B 4 Bytes PA11 PA10 BA8 BA7 BA5 BA3 BA2 BA6 BA4 BA1 x B x B x B Opcode 50H 52H 53H 54H 55H 56H 57H 58H 59H 60H 61H 68H 81H 82H 83H 84H 85H 86H 87H 88H 89H D2H D4H D6H D7H E8H Opcode 01010000r 01010010r 01010011r 01010100x 01010101r 01010110x 01010111 01011000r 01011001r 01100000r 01100001r 01101000r 10000001r 10000010r 10000011r 10000100x 10000101r 10000110r 10000111x 10001000r 10001001r 11010010r 11010100x 11010110x 11010111 11101000r r r r x r x r r r x r x P P P x P x P P P x P x N/A P P P x P x P P P x P x P P P x P x P P P x P x P P P x P x P P P x P x P P P x P x x P P x P x N/A x P P x P x x P P x P x x B x B x B x B x B x B x B x B x B x B x B x B x B x B x B x B x B x B N/A x B x B x B x B x B x B r r r r r r r r x r r x r r r x x r r r r r r r r x r r x r r r x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x N/A P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x N/A P P P P P P P P x P P x P P P x x P P P P P P P P x P P x P P P x x x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B x x x x B x B x B B x B x x B B B N/A r r P P P P P P P P P P P P B B B B B B Note: r = Reserved Bit P = Page Address Bit B = Byte/Buffer Address Bit x = Don’t Care BA0 PA9 PA7 PA5 PA4 PA8 PA6 PA3 PA2 PA1 PA0 11 2225I–DFLSH–9/05 Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC and AC Operating Range AT45DB081B (2.5V Version) Operating Temperature (Case) VCC Power Supply Note: (1) AT45DB081B 0°C to 70°C -40°C to 85°C 2.7V to 3.6V Com. Ind. 0°C to 70°C – 2.5V to 3.6V 1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an operational mode is started. DC Characteristics Symbol ISB ICC1(1) ICC2 ILI ILO VIL VIH VOL VOH Note: Parameter Standby Current Active Current, Read Operation Active Current, Program/Erase Operation Input Load Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 1.6 mA; VCC = 2.7V IOH = -100 µA VCC - 0.2V 2.0 0.4 Condition CS, RESET, WP = VCC, all inputs at CMOS levels f = 20 MHz; IOUT = 0 mA; VCC = 3.6V VCC = 3.6V VIN = CMOS levels VI/O = CMOS levels Min Typ 2 4 15 Max 10 10 35 1 1 0.6 Units µA mA mA µA µA V V V V 1. Icc1 during a buffer read is 20mA maximum. 12 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B AC Characteristics AT45DB081B (2.5V Version) Symbol fSCK fCAR tWH tWL tCS tCSS tCSH tCSB tSU tH tHO tDIS tV tXFR tEP tP tPE tBE tRST tREC Parameter SCK Frequency SCK Frequency for Continuous Array Read SCK High Time SCK Low Time Minimum CS High Time CS Setup Time CS Hold Time CS High to RDY/BUSY Low Data In Setup Time Data In Hold Time Output Hold Time Output Disable Time Output Valid Page to Buffer Transfer/Compare Time Page Erase and Programming Time Page Programming Time Page Erase Time Block Erase Time RESET Pulse Width RESET Recovery Time 10 1 10 15 0 20 25 300 20 14 8 12 10 1 30 30 250 250 250 200 5 10 0 18 20 250 20 14 8 12 Min Max 15 15 22 22 250 250 250 200 AT45DB081B Min Max 20 20 Units MHz MHz ns ns ns ns ns ns ns ns ns ns ns µs ms ms ms ms µs µs 13 2225I–DFLSH–9/05 Input Test Waveforms and Measurement Levels AC DRIVING LEVELS 2.4V 2.0 0.8 0.45V AC MEASUREMENT LEVEL tR, tF < 3 ns (10% to 90%) Output Test Load DEVICE UNDER TEST 30 pF AC Waveforms Two different timing diagrams are shown below. Waveform 1 shows the SCK signal being low when CS makes a high-to-low transition, and Waveform 2 shows the SCK signal being high when CS makes a high-to-low transition. Both waveforms show valid timing diagrams. The setup and hold times for the SI signal are referenced to the low-tohigh transition on the SCK signal. Waveform 1 shows timing that is also compatible with SPI Mode 0, and Waveform 2 shows timing that is compatible with SPI Mode 3. Waveform 1 – Inactive Clock Polarity Low and SPI Mode 0 tCS CS tCSS SCK tV SO HIGH IMPEDANCE tSU SI VALID IN tH tHO VALID OUT tDIS HIGH IMPEDANCE tWH tWL tCSH Waveform 2 – Inactive Clock Polarity High and SPI Mode 3 tCS CS tCSS SCK tV SO HIGH Z tSU SI VALID IN tHO VALID OUT tH tDIS HIGH IMPEDANCE tWL tWH tCSH 14 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Reset Timing (Inactive Clock Polarity Low Shown) CS tREC tCSS SCK tRST RESET HIGH IMPEDANCE HIGH IMPEDANCE SO SI Note: The CS signal should be in the high state before the RESET signal is deasserted. Command Sequence for Read/Write Operations (except Status Register Read) SI CMD 8 bits 8 bits 8 bits MSB r r r XXXXX Reserved for larger densities XXXX XXXX XXXX XXXX LSB Page Address (PA11-PA0) Byte/Buffer Address (BA8-BA0/BFA8-BFA0) Notes: 1. “r” designates bits reserved for larger densities. 2. It is recommended that “r” be a logical “0” for densities of 8M bits or smaller. 3. For densities larger than 8M bits, the “r” bits become the most significant Page Address bit for the appropriate density. 15 2225I–DFLSH–9/05 Write Operations The following block diagram and waveforms illustrate the various write sequences available. FLASH MEMORY ARRAY PAGE (256 BYTES) BUFFER 1 TO PAGE PROGRAM PAGE PROGRAM THROUGH BUFFER 2 BUFFER 2 TO PAGE PROGRAM BUFFER 1 (256 BYTES) BUFFER 1 WRITE PAGE PROGRAM THROUGH BUFFER 1 BUFFER 2 (256 BYTES) BUFFER 2 WRITE I/O INTERFACE SI Main Memory Page Program through Buffers · Completes writing into selected buffer · Starts self-timed erase/program operation CS SI CMD r r r , PA11-7 PA6-0, BFA8 BFA7-0 n n+1 Last Byte Buffer Write · Completes writing into selected buffer CS SI CMD X X···X, BFA8 BFA7-0 n n+1 Last Byte Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page) Starts self-timed erase/program operation CS SI CMD r r r , PA11-7 PA6-0, X X Each transition represents 8 bits and 8 clock cycles n = 1st byte read n+1 = 2nd byte read 16 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Read Operations The following block diagram and waveforms illustrate the various read sequences available. FLASH MEMORY ARRAY PAGE (264 BYTES) MAIN MEMORY PAGE TO BUFFER 1 MAIN MEMORY PAGE TO BUFFER 2 BUFFER 1 (264 BYTES) BUFFER 1 READ BUFFER 2 (264 BYTES) MAIN MEMORY PAGE READ BUFFER 2 READ I/O INTERFACE SO Main Memory Page Read CS SI SO CMD r r r , PA11-7 PA6-0, BA8 BA7-0 X X X X n n+1 Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer) Starts reading page data into buffer CS SI SO CMD r r r , PA11-7 PA6-0, X X Buffer Read CS SI SO CMD X X···X, BFA8 BFA7-0 X n n+1 Each transition represents 8 bits and 8 clock cycles n = 1st byte read n+1 = 2nd byte read 17 2225I–DFLSH–9/05 Detailed Bit-level Read Timing – Inactive Clock Polarity Low Continuous Array Read (Opcode: 68H) CS SCK tSU SI 1 2 63 64 65 66 67 68 0 1 X X tV SO HIGH-IMPEDANCE DATA OUT D7 D6 D5 D2 D1 LSB D0 MSB D7 D6 D5 BIT 2111 OF PAGE n BIT 0 OF PAGE n+1 Main Memory Page Read (Opcode: 52H) CS SCK tSU 1 2 3 4 5 60 61 62 63 64 65 66 67 COMMAND OPCODE SI 0 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE DATA OUT D7 MSB D6 D5 18 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued) Buffer Read (Opcode: 54H or 56H) CS SCK tSU 1 2 3 4 5 36 37 38 39 40 41 42 43 COMMAND OPCODE SI 0 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE DATA OUT D7 MSB D6 D5 Status Register Read (Opcode: 57H) CS SCK tSU 1 2 3 4 5 6 7 8 9 10 11 12 16 17 COMMAND OPCODE SI 0 1 0 1 0 1 1 1 tV SO HIGH-IMPEDANCE D7 MSB STATUS REGISTER OUTPUT D6 D5 D1 D0 LSB D7 MSB 19 2225I–DFLSH–9/05 Detailed Bit-level Read Timing – Inactive Clock Polarity High Continuous Array Read (Opcode: 68H) CS SCK tSU SI 1 2 63 64 65 66 67 0 1 X X X tV SO HIGH-IMPEDANCE DATA OUT D7 D6 D5 D2 D1 LSB D0 MSB D7 D6 D5 BIT 2111 OF PAGE n BIT 0 OF PAGE n+1 Main Memory Page Read (Opcode: 52H) CS SCK tSU 1 2 3 4 5 61 62 63 64 65 66 67 68 COMMAND OPCODE SI 0 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 20 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued) Buffer Read (Opcode: 54H or 56H) CS SCK tSU 1 2 3 4 5 37 38 39 40 41 42 43 44 COMMAND OPCODE SI 0 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 Status Register Read (Opcode: 57H) CS SCK tSU 1 2 3 4 5 6 7 8 9 10 11 12 17 18 COMMAND OPCODE SI 0 1 0 1 0 1 1 1 tV SO HIGH-IMPEDANCE D7 MSB STATUS REGISTER OUTPUT D6 D5 D4 D0 LSB D7 MSB D6 21 2225I–DFLSH–9/05 Detailed Bit-level Read Timing – SPI Mode 0 Continuous Array Read (Opcode: E8H) CS SCK tSU SI 1 2 62 63 64 65 66 67 1 1 X X X tV SO HIGH-IMPEDANCE DATA OUT D7 D6 D5 D2 D1 LSB D0 MSB D7 D6 D5 BIT 2111 OF PAGE n BIT 0 OF PAGE n+1 Main Memory Page Read (Opcode: D2H) CS SCK tSU 1 2 3 4 5 60 61 62 63 64 65 66 67 COMMAND OPCODE SI 1 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 22 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Detailed Bit-level Read Timing – SPI Mode 0 Buffer Read (Opcode: D4H or D6H) CS SCK tSU 1 2 3 4 5 36 37 38 39 40 41 42 43 COMMAND OPCODE SI 1 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 Status Register Read (Opcode: D7H) CS SCK tSU 1 2 3 4 5 6 7 8 9 10 11 12 16 17 COMMAND OPCODE SI 1 1 0 1 0 1 1 1 tV SO HIGH-IMPEDANCE D7 MSB D6 STATUS REGISTER OUTPUT D5 D4 D1 D0 LSB D7 MSB 23 2225I–DFLSH–9/05 Detailed Bit-level Read Timing – SPI Mode 3 Continuous Array Read (Opcode: E8H) CS SCK tSU SI 1 2 63 64 65 66 67 1 1 X X X tV SO HIGH-IMPEDANCE DATA OUT D7 D6 D5 D2 D1 LSB D0 MSB D7 D6 D5 BIT 2111 OF PAGE n BIT 0 OF PAGE n+1 Main Memory Page Read (Opcode: D2H) CS SCK tSU 1 2 3 4 5 61 62 63 64 65 66 67 68 COMMAND OPCODE SI 1 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 24 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Detailed Bit-level Read Timing – SPI Mode 3 (Continued) Buffer Read (Opcode: D4H or D6H) CS SCK tSU 1 2 3 4 5 37 38 39 40 41 42 43 44 COMMAND OPCODE SI 1 1 0 1 0 X X X X X tV SO HIGH-IMPEDANCE D7 MSB DATA OUT D6 D5 D4 Status Register Read (Opcode: D7H) CS SCK tSU 1 2 3 4 5 6 7 8 9 10 11 12 17 18 COMMAND OPCODE SI 1 1 0 1 0 1 1 1 tV SO HIGH-IMPEDANCE D7 MSB STATUS REGISTER OUTPUT D6 D5 D4 D0 LSB D7 MSB D6 25 2225I–DFLSH–9/05 Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire Array START provide address and data BUFFER WRITE (84H, 87H) MAIN MEMORY PAGE PROGRAM THROUGH BUFFER (82H, 85H) BUFFER TO MAIN MEMORY PAGE PROGRAM (83H, 86H) END Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-bypage. 2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. 3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array. 26 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Figure 2. Algorithm for Randomly Modifying Data START provide address of page to modify MAIN MEMORY PAGE TO BUFFER TRANSFER (53H, 55H) If planning to modify multiple bytes currently stored within a page of the Flash array BUFFER WRITE (84H, 87H) MAIN MEMORY PAGE PROGRAM THROUGH BUFFER (82H, 85H) BUFFER TO MAIN MEMORY PAGE PROGRAM (83H, 86H) AUTO PAGE REWRITE (58H, 59H) (2) INCREMENT PAGE (2) ADDRESS POINTER END Notes: 1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations. 2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command must use the address specified by the Page Address Pointer. 3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. Sector Addressing PA11 0 0 0 0 • • • 1 1 1 1 PA10 0 0 0 0 • • • 0 0 1 1 PA9 0 0 0 1 • • • 0 1 0 1 PA8 0 0 1 X • • • X X X X PA7 0 X X X • • • X X X X PA6 0 X X X • • • X X X X PA5 0 X X X • • • X X X X PA4 0 X X X • • • X X X X PA3 0 X X X • • • X X X X PA2 - PA0 X X X X • • • X X X X Sector 0 1 2 3 • • • 6 7 8 9 27 2225I–DFLSH–9/05 Ordering Information fSCK (MHz) 20 ICC (mA) Active 10 Standby 0.01 Ordering Code AT45DB081B-CC AT45DB081B-CNC AT45DB081B-RC AT45DB081B-TC AT45DB081B-CI AT45DB081B-CNI AT45DB081B-RI AT45DB081B-TI AT45DB081B-CC-2.5 AT45DB081B-CNC-2.5 AT45DB081B-RC-2.5 AT45DB081B-TC-2.5 Package 14C1 8CN3 28R 28T 14C1 8CN3 28R 28T 14C1 8CN3 28R 28T Operation Range Commercial (0°C to 70°C) 20 10 0.01 Industrial (-40°C to 85°C) 15 10 0.01 Commercial (0°C to 70°C) 2.5V to 3.6V Green Packaging Options (Pb/Halide-free) fSCK (MHz) ICC (mA) Active Standby Ordering Code AT45DB081B-CNU AT45DB081B-RU AT45DB081B-TU AT45DB081B-CU Package 8CN3 28R 28T 14C1 Operation Range Industrial (-40°C to 85°C) 20 10 0.01 Note: Green packages cover lead-free requirements. Package Type 14C1 8CN3 28R 28T 14-ball (3 x 5 Array), Plastic Chip-scale Ball Grid Array (CBGA) 8-pad (6 mm x 8 mm ) Chip Array Small Outline No Lead Package (CASON) 28-lead, 0.330" Wide, Plastic Gull Wing Small Outline Package (SOIC) 28-lead, Plastic Thin Small Outline Package (TSOP) 28 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B Packaging Information 14C1 – CBGA Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 4.60(0.181) 4.40(0.173) A1 ID 7.10(0.280) 6.90(0.272) SIDE VIEW TOP VIEW 0.30 (0.012)MIN 1.40 (0.055) MAX 2.0 (0.079) 1.25 (0.049) REF 1.50 (0.059) REF 3 2 1 A B 1.00 (0.0394) BSC NON-ACCUMULATIVE C D E 4.0 (0.157) 1.00 (0.0394) BSC NON-ACCUMULATIVE 0.46 (0.018) DIA BALL TYP BOTTOM VIEW 04/11/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 14C1, 14-ball (3 x 5 Array), 4.5 x 7 x 1.4 mm Body, 1.0 mm Ball Pitch Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 14C1 REV. A R 29 2225I–DFLSH–9/05 8CN3 – CASON Marked Pin1 Indentifier E D Top View A A1 Side View Pin1 Pad Corner 0.10 mm TYP L1 8 1 e 7 2 COMMON DIMENSIONS (Unit of Measure = mm) 6 3 b 5 4 SYMBOL A A1 b D MIN NOM MAX 1.0 NOTE 0.17 0.21 0.41 TYP 0.25 4 8.10 6.10 e1 Bottom View L 7.90 5.90 8.00 6.00 1.27 BSC 1.095 REF 0.67 TYP E e e1 L 4 1.02 4 Notes: 1. 2. 3. 4. All dimensions and tolerance conform to ASME Y 14.5M, 1994. The surface finish of the package shall be EDM Charmille #24-27. Unless otherwise specified tolerance: Decimal ±0.05, Angular ±2o. Metal Pad Dimensions. L1 0.92 0.97 7/10/03 2325 Orchard Parkway San Jose, CA 95131 TITLE 8CN3, 8-pad (6 x 8 x 1.0 mm Body), Lead Pitch 1.27 mm, Chip Array Small Outline No Lead Package (CASON) DRAWING NO. 8CN3 REV. B R 30 AT45DB081B 2225I–DFLSH–9/05 AT45DB081B 28R – SOIC B E1 E PIN 1 e D A A1 COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN 2.39 0.050 18.00 11.70 1 8.59 0.356 0.203 0.94 NOM – – – – – – – – 1.27 TYP MAX 2.79 0.356 18.50 12.50 8.79 0.508 0.305 1.27 Note 1 Note 1 NOTE 0º ~ 8º C A A1 L D E E B Note: 1. Dimensions D and E1 do not include mold Flash or protrusion. Mold Flash or protrusion shall not exceed 0.25 mm (0.010"). C L e 5/18/2004 2325 Orchard Parkway San Jose, CA 95131 TITLE 28R, 28-lead, 0.330" Body Width, Plastic Gull Wing Small Outline (SOIC) DRAWING NO. 28R REV. C R 31 2225I–DFLSH–9/05 28T – TSOP PIN 1 0º ~ 5º c Pin 1 Identifier Area D1 D L e b L1 E A2 A SEATING PLANE GAGE PLANE A1 SYMBOL A A1 A2 Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. D D1 E L L1 b c e COMMON DIMENSIONS (Unit of Measure = mm) MIN – 0.05 0.90 13.20 11.70 7.90 0.50 NOM – – 1.00 13.40 11.80 8.00 0.60 0.25 BASIC 0.17 0.10 0.22 – 0.55 BASIC 0.27 0.21 MAX 1.20 0.15 1.05 13.60 11.90 8.10 0.70 Note 2 Note 2 NOTE 12/06/02 2325 Orchard Parkway San Jose, CA 95131 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. 28T REV. C R 32 AT45DB081B 2225I–DFLSH–9/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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A tmel ®, logo and combinations thereof, Everywhere You Are ®, DataFlash ® and others, are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. Printed on recycled paper. 2225I–DFLSH–9/05 /xM