AT49LV160-90TI

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register • • • • • • • • 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory AT49BV160 AT49LV160 AT49BV160T AT49BV161 AT49LV161 AT49BV161T AT49LV161T Description The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming. Pin Configurations Pin Name A0 - A19 CE OE WE RESET RDY/BUSY VPP I/O0 - I/O14 I/O15 (A-1) BYTE NC VCCQ Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Write Protection and Power Supply for Accelerated Program/Erase Operations Data Inputs/Outputs I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Selects Byte or Word Mode No Connect Output Power Supply Rev. 1427L–FLASH–02/03 1 TSOP Top View Type 1 1 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET VPP NC A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 CBGA Top View 2 3 4 5 6 7 8 A A13 A11 A10 A12 I/O14 A8 WE A9 I/O5 I/O6 I/O13 I/O11 I/O12 I/O4 I/O2 I/O3 VCC VPP RST A18 A19 A17 A6 I/O8 I/O9 I/O10 A7 A5 A3 CE I/O0 I/O1 A4 A2 A1 A0 GND OE B A14 C A15 D A16 AT49BV/LV160(T) E VCCQ I/O15 F GND I/O7 TSOP Top View Type 1 1 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE RESET VPP NC RDY/BUSY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE GND I/O15/A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 CBGA Top View 2 3 4 5 6 A A3 A7 RDY/BUSY WE A17 A6 A5 I/O0 I/O8 I/O9 I/O1 NC A18 NC I/O2 I/O10 I/O11 I/O3 RESET VPP A19 I/O5 I/O12 VCC I/O4 A9 A8 A10 A11 I/O7 I/O14 I/O13 I/O6 A13 A12 A14 A15 A16 BYTE I/O15 /A-1 VSS B A4 C A2 D A1 AT49BV/LV161(T) E A0 F CE G OE H VSS 2 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector. (See “Sector Lockdown” section.) To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the Erase or Program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the Ready/Busy pin, Data Polling or by the toggle bit. The VPP pin provides data protection and faster programming. When the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 5.0V or 12.0V, the program and erase operations are accelerated. A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume, and Program Suspend/Resume commands will not work while in this mode; if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. When using the AT49BV/LV160(T) pinout configuration, the device always operates in the word mode. In the AT49BV/LV161(T) configuration, the BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tristated, and the I/O15 pin is used as an input for the LSB (A-1) address function. 3 1427L–FLASH–02/03 Block Diagram I/O0 - I/O15/A-1 OUTPUT BUFFER INPUT BUFFER OUTPUT MULTIPLEXER A0 - A19 INPUT BUFFER DATA REGISTER IDENTIFIER REGISTER STATUS REGISTER COMMAND REGISTER ADDRESS LATCH DATA COMPARATOR CE WE OE RESET BYTE RDY/BUSY WRITE STATE MACHINE Y-DECODER Y-GATING PROGRAM/ERASE VOLTAGE SWITCH VPP VCC GND X-DECODER MAIN MEMORY 4 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Device Operation READ: The AT49BV/LV16X(T) is accessed like an EPROM. When CE and OE are low and WE i s high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition in Hex” table on page 13 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high-impedance state. When a high level is reasserted on the RESET pin, the device returns to the read or standby mode, depending upon the state of the control inputs. ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command. CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase software code. After the chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time to erase the chip is tEC. If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that has been locked out; it will erase only the unprotected sectors. After the chip erase, the device will return to the read or standby mode. SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a sector that has been protected will result in the operation terminating in 2 µs. BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses. 5 1427L–FLASH–02/03 Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or program operation was performed successfully. VPP PIN: The circuitry of the AT49BV/LV16X(T) is designed so that the device can be programmed or erased from the VCC power supply or from the VPP input pin. When VPP is greater than 1.65V and less than or equal to the VCC pin, the device selects the VCC supply for programming and erase operations. When the VPP pin is greater than the VCC supply, the device will select the VPP i nput as the power supply for programming and erase operations. The device will allow for some variations between the VPP input and the VCC power supply in its selection of VCC or VPP for program or erase operations. If the VPP pin is within 0.3V of VCC for 2.65V < VCC < 3.6V, then the program or erase operations will use VCC and disregard the VPP input signal. When the VPP signal is used for program and erase operations, the VPP must be in the 5V ± 0.5V or 12V ± 0.5V range to ensure proper operation. The Vpp pin cannot be left floating. PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 12 and the following four sections describe the function of these bits. To provide greater flexibility for system designers, the AT49BV/LV16X(T) contains a programmable configuration register. The configuration register allows the user to specify the status bit operation. The configuration register can be set to one of two different values, “00” or “01”. If the configuration register is set to “00”, the part will automatically return to the read mode after a successful program or erase operation. If the configuration register is set to a “01”, a Product ID Exit command must be given after a successful program or erase operation before the part will return to the read mode. It is important to note that whether the configuration register is set to a “00” or to a “01”, any unsuccessful program or erase operation requires using the Product ID Exit command to return the device to read mode. The default value (after power-up) for the configuration register is “00”. Using the four-bus cycle Set Configuration Register command as shown in the “Command Definition in Hex” table on page 13, the value of the configuration register can be changed. Voltages applied to the RESET pin will not alter the value of the configuration register. The value of the configuration register will affect the operation of the I/O7 status bit as described below. DATA POLLING: The AT49BV/LV16X(T) features Data Polling to indicate the end of a program cycle. If the status configuration register is set to a “00”, during a program cycle an attempted read of the last byte/word loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a “0” on I/O7. Once the program or erase cycle has completed, true data will be read from the device. Data Polling may begin at any time during the program cycle. Please see “Status Bit Table” on page 12 for more details. 6 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the device is actively programming or erasing data. I/O7 will go high when the device has completed a program or erase operation. Once I/O7 has gone high, status information on the other pins can be checked. The Data Polling status bit must be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 1 and 2 on page 10. TOGGLE BIT: In addition to Data Polling, the AT49BV/LV16X(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the memory will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. Please see “Status Bit Table” on page 12 for more details. The toggle bit status bit should be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 3 and 4 on page 11. ERASE/PROGRAM STATUS BIT: The device offers a status bit on I/O5, which indicates whether the program or erase operation has exceeded a specified internal pulse count limit. If the status bit is a “1”, the device is unable to verify that an erase or a byte/word program operation has been successfully performed. The device may also output a “1” on I/O5 if the system tries to program a “1” to a location that was previously programmed to a “0”. Only an erase operation can change a “0” back to a “1”. If a program (Sector Erase) command is issued to a protected sector, the protected sector will not be programmed (erased). The device will go to a status read mode and the I/O5 status bit will be set high, indicating the program (erase) operation did not complete as requested. Once the erase/program status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. The erase/program status bit is a “0” while the erase or program operation is still in progress. Please see “Status Bit Table” on page 12 for more details. VPP STATUS BIT: The AT49BV/LV16X(T) provides a status bit on I/O3, which provides information regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”. Once the VPP status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. On the other hand, if the voltage level is high enough to perform a program or erase operation successfully, the VPP status bit will output a “0”. Please see “Status Bit Table” on page 12 for more details. SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; any sector’s usage as a write-protected region is optional to the user. At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector, the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked down, the contents of the sector is read-only and cannot be erased or programmed. SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification mode (see “Software Product Identification Entry/Exit” sections on page 24), a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation. 7 1427L–FLASH–02/03 SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is through reset or power-up cycles. After power-up or reset, the content of a sector that is locked down can be erased and reprogrammed. ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to interrupt a sector erase or chip erase operation and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The device also supports an erase suspend during a complete chip erase. While the chip erase is suspended, the user can read from any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the same. PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the system to interrupt a programming operation and then read data from a different byte/word within the memory. After the Program Suspend command is given, the device requires a maximum of 15 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other byte/word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see “Operating Modes” on page 17 (for hardware operation) or “Software Product Identification Entry/Exit” on page 24. The manufacturer and device codes are the same for both modes. 128-BIT PROTECTION REGISTER: The AT49BV/LV16X(T) contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64-bit blocks. The two blocks are designated as block A and block B. The data in block A is non-changeable and is programmed at the factory with a unique number. The data in block B is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program Protection Register command must be used as shown in the “Command Definition in Hex” table on page 13. To lock out block B, the four-bus cycle Lock Protection Register command must be used as shown in the “Command Definition in Hex” table on page 13. Data bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus cycle are don’t cares. To determine whether block B is locked out, the Product ID Entry command is given followed by a read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 14 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether block B is protected or not, or reading the protection register, the Product ID Exit command must be given prior to performing any other operation. 8 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) RDY/BUSY: For the AT49BV/LV161(T), an open-drain READY/BUSY o utput pin provides another method of detecting the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. The open-drain connection allows for OR-tying of several devices to the same RDY/BUSY line. Please see “Status Bit Table” on page 12 for more details. HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against inadvertent programs to the AT49BV/LV16X(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE l ow, CE h igh or WE h igh inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. (e) Program inhibit: VPP is less than VILPP. (f) VPP power-on delay: once VPP has reached 1.65V, program and erase operations can occur after 100 ns. INPUT LEVELS: While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V. OUTPUT LEVELS: For the AT49BV/LV160(T), output high levels (VOH) are equal to VCCQ 0.2V (not VCC). For 2.65V - 3.6V output levels, VCCQ must be tied to VCC. For 1.8V - 2.2V output levels, VCCQ must be regulated to 2.0V ± 10%, while VCC must be regulated to 2.65V - 3.0V (for minimum power). 9 1427L–FLASH–02/03 Figure 1. Data Polling Algorithm (Configuration Register = 00) Figure 2. Data Polling Algorithm (Configuration Register = 01) START START Read I/O7 - I/O0 Addr = VA NO Read I/O7 - I/O0 Addr = VA YES I/O7 = Data? I/O7 = 1? YES NO I/O3, I/O5 = 1? NO NO I/O3, I/O5 = 1? YES YES Read I/O7 - I/O0 Addr = VA Program/Erase Operation Not Successful, Write Product ID Exit Command Note: Program/Erase Operation Successful, Write Product ID Exit Command I/O7 = Data? YES NO Program/Erase Operation Not Successful, Write Product ID Exit Command Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. Program/Erase Operation Successful, Device in Read Mode 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = “1” because I/O7 may change simultaneously with I/O5. 10 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Figure 3. Toggle Bit Algorithm (Configuration Register = 00) Figure 4. Toggle Bit Algorithm (Configuration Register = 01) START START Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Toggle Bit = Toggle? YES NO I/O3, I/O5 = 1? NO Toggle Bit = Toggle? YES NO I/O3, I/O5 = 1? NO YES Read I/O7 - I/O0 Twice YES Read I/O7 - I/O0 Twice Toggle Bit = Toggle? YES Program/Erase Operation Not Successful, Write Product ID Exit Command Note: NO Toggle Bit = Toggle? YES NO Program/Erase Operation Successful Program/Erase Operation Not Successful, Write Product ID Exit Command Note: Program/Erase Operation Successful, Write Product ID Exit Command 1. The system should recheck the toggle bit even if I/O5 = “1” because the toggle bit may stop toggling as I/O5 changes to “1”. 1. The system should recheck the toggle bit even if I/O5 = “1” because the toggle bit may stop toggling as I/O5 changes to “1”. 11 1427L–FLASH–02/03 Status Bit Table Status Bit I/O7 Configuration Register: Programming Erasing Erase Suspended & Read Erasing Sector Erase Suspended & Read Non-erasing Sector Erase Suspended & Program Non-erasing Sector Notes: 00 I/O7 0 1 DATA I/O7 I/O7 01 0 0 1 DATA 0 I/O6 00/01 TOGGLE TOGGLE 1 DATA TOGGLE I/O5(1) 00/01 0 0 0 DATA 0 I/O3(2) 00/01 0 0 0 DATA 0 I/O2 00/01 1 TOGGLE TOGGLE DATA TOGGLE RDY/BUSY 00/01 0 0 1 1 0 1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or sector erase operation is performed on a protected sector. 2. I/O3 switches to a “1” when the VPP level is not high enough to successfully perform program and erase operations. 12 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Command Definition in Hex(1) Command Sequence Read Chip Erase Sector Erase Byte/Word Program Enter Single Pulse Program Mode Single Pulse Byte/Word Program Sector Lockdown Erase/Program Suspend Erase/Program Resume Product ID Entry Product ID Exit (5) Bus Cycles 1 6 6 4 6 1 6 1 1 3 3 1 4 4 4 4 1st Bus Cycle Addr Addr 555 555 555 555 Addr 555 XXX XXX 555 555 XXX 555 555 555 555 Data DOUT AA AA AA AA DIN AA B0 30 AA AA F0 AA AA AA AA 2nd Bus Cycle Addr AAA(2) AAA AAA AAA Data 3rd Bus Cycle Addr Data 4th Bus Cycle Addr Data 5th Bus Cycle Addr Data 6th Bus Cycle Addr Data 55 55 55 55 555 555 555 555 80 80 A0 80 555 555 Addr 555 AA AA DIN AA AAA AAA 55 55 555 SA (3)(4) 10 30 AAA 55 555 A0 AAA 55 555 80 555 AA AAA 55 SA(3)(4) 60 AAA AAA 55 55 555 555 90 F0 Product ID Exit(5) Program Protection Register Lock Protection Register - Block B Status of Block B Protection Set Configuration Register AAA AAA AAA AAA 55 55 55 55 555 555 555 555 C0 C0 90 D0 Addr 080 80 XXX DIN X0 DOUT(6) 00/01(7) Notes: 1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8 are Don’t Care. The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A19 through A11 are Don’t Care in the word mode. Address A19 through A11 and A-1 are Don’t Care in the byte mode. 2. Since A11 is a Don’t Care, AAA can be replaced with 2AA. 3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 15 and 16 for details). 4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled. 5. Either one of the Product ID Exit commands can be used. 6. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed. 7. The default state (after power-up) of the configuration register is “00”. Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and VPP with Respect to Ground ...................................-0.6V to +13.0V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 13 1427L–FLASH–02/03 Protection Register Addressing Table Word 0 1 2 3 4 5 6 7 Note: Use Factory Factory Factory Factory User User User Block A A A A B B B A7 1 1 1 1 1 1 1 A6 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 A3 0 0 0 0 0 0 0 A2 0 0 0 1 1 1 1 A1 0 1 1 0 0 1 1 A0 1 0 1 0 1 0 1 User B 1 0 0 0 1 0 0 0 1. All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A19 - A8 = 0. 14 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) AT49BV/LV160/161 – Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 Size (Bytes/Words) 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K x8 Address Range (A19 - A-1) 000000 - 001FFF 002000 - 003FFF 004000 - 005FFF 006000 - 007FFF 008000 - 009FFF 00A000 - 00BFFF 00C000 - 00DFFF 00E000 - 00FFFF 010000 - 01FFFF 020000 - 02FFFF 030000 - 03FFFF 040000 - 04FFFF 050000 - 05FFFF 060000 - 06FFFF 070000 - 07FFFF 080000 - 08FFFF 090000 - 09FFFF 0A0000 - 0AFFFF 0B0000 - 0BFFFF 0C0000 - 0CFFFF 0D0000 - 0DFFFF 0E0000 - 0EFFFF 0F0000 - 0FFFFF 100000 - 10FFFF 110000 - 11FFFF 120000 - 12FFFF 130000 - 13FFFF 140000 - 14FFFF 150000 - 15FFFF 160000 - 16FFFF 170000 - 17FFFF 180000 - 18FFFF 190000 - 19FFFF 1A0000 - 1AFFFF 1B0000 - 1BFFFF 1C0000 - 1CFFFF 1D0000 - 1DFFFF 1E0000 - 1EFFFF 1F0000 - 1FFFFF x16 Address Range (A19 - A0) 00000 - 00FFF 01000 - 01FFF 02000 - 02FFF 03000 - 03FFF 04000 - 04FFF 05000 - 05FFF 06000 - 06FFF 07000 - 07FFF 08000 - 0FFFF 10000 - 17FFF 18000 - 1FFFF 20000 - 27FFF 28000 - 2FFFF 30000 - 37FFF 38000 - 3FFFF 40000 - 47FFF 48000 - 4FFFF 50000 - 57FFF 58000 - 5FFFF 60000 - 67FFF 68000 - 6FFFF 70000 - 77FFF 78000 - 7FFFF 80000 - 87FFF 88000 - 8FFFF 90000 - 97FFF 98000 - 9FFFF A0000 - A7FFF A8000 - AFFFF B0000 - B7FFF B8000 - BFFFF C0000 - C7FFF C8000 - CFFFF D0000 - D7FFF D8000 - DFFFF E0000 - E7FFF E8000 - EFFFF F0000 - F7FFF F8000 - FFFFF 15 1427L–FLASH–02/03 AT49BV/LV160T/161T – Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 Size (Bytes/Words) 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 64K/32K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K 8K/4K x8 Address Range (A19 - A-1) 000000 - 00FFFF 010000 - 01FFFF 020000 - 02FFFF 030000 - 03FFFF 040000 - 04FFFF 050000 - 05FFFF 060000 - 06FFFF 070000 - 07FFFF 080000 - 08FFFF 090000 - 09FFFF 0A0000 - 0AFFFF 0B0000 - 0BFFFF 0C0000 - 0CFFFF 0D0000 - 0DFFFF 0E0000 - 0EFFFF 0F0000 - 0FFFFF 100000 - 10FFFF 110000 - 11FFFF 120000 - 12FFFF 130000 - 13FFFF 140000 - 14FFFF 150000 - 15FFFF 160000 - 16FFFF 170000 - 17FFFF 180000 - 18FFFF 190000 - 19FFFF 1A0000 - 1AFFFF 1B0000 - 1BFFFF 1C0000 - 1CFFFF 1D0000 - 1DFFFF 1E0000 - 1EFFFF 1F0000 - 1F1FFF 1F2000 - 1F3FFF 1F4000 - 1F5FFF 1F6000 - 1F7FFF 1F8000 - 1F9FFF 1FA000 - 1FBFFF 1FC000 - 1FDFFF 1FE000 - 1FFFFF x16 Address Range (A19 - A0) 00000 - 07FFF 08000 - 0FFFF 10000 - 17FFF 18000 - 1FFFF 20000 - 27FFF 28000 - 2FFFF 30000 - 37FFF 38000 - 3FFFF 40000 - 47FFF 48000 - 4FFFF 50000 - 57FFF 58000 - 5FFFF 60000 - 67FFF 68000 - 6FFFF 70000 - 77FFF 78000 - 7FFFF 80000 - 87FFF 88000 - 8FFFF 90000 - 97FFF 98000 - 9FFFF A0000 - A7FFF A8000 - AFFFF B0000 - B7FFF B8000 - BFFFF C0000 - C7FFF C8000 - CFFFF D0000 - D7FFF D8000 - DFFFF E0000 - E7FFF E8000 - EFFFF F0000 - F7FFF F8000 - F8FFF F9000 - F9FFF FA000 - FAFFF FB000 - FBFFF FC000 - FCFFF FD000 - FDFFF FE000 - FEFFF FF000 - FFFFF 16 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) DC and AC Operating Range AT49BV/LV16X(T)-70 Operating Temperature (Case) VCC Power Supply Ind. -40°C - 85°C 2.65V to 3.3V/3.0V to 3.6V AT49BV/LV16X(T)-90 -40°C - 85°C 2.65V to 3.3V/3.0V to 3.6V Operating Modes Mode Read Program/Erase(2) Standby/Program Inhibit CE VIL VIL VIH X Program Inhibit X X Output Disable Reset Product Identification Hardware VIL VIL VIH VIH A1 - A19 = VIL, A9 = VH(3), A0 = VIL A1 - A19 = VIL, A9 = VH(3), A0 = VIH A0 = VIL, A1 - A19 = VIL A0 = VIH, A1 - A19 = VIL Manufacturer Code(4) Device Code(4) Manufacturer Code(4) Device Code(4) X X OE VIL VIH X(1) X VIL X VIH X WE VIH VIL X VIH X X X X RESET VIH VIH VIH VIH VIH VIH VIH VIL VPP X VIHPP(6) X X X VILPP(7) X X X High-Z High-Z Ai Ai Ai X DOUT DIN High-Z I/O Software(5) VIH Notes: X can be VIL or VIH. Refer to AC programming waveforms on page 23. VH = 12.0V ± 0.5V. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C0H (x8)-AT49BV/LV16X; 00C0H (x16)-AT49BV/LV16X; C2H (x8)-AT49BV/LV16XT; 00C2H (x16)-AT49BV/LV16XT. 5. See details under “Software Product Identification Entry/Exit” on page 24. 6. VIHPP (min) = 1.65V; VIHPP (max) = 3.6V. For faster erase/program operations, VPP can be set to 5.0V ± 0.5V or 12V ± 0.5V. 7. VILPP (max) = 0.8V. 1. 2. 3. 4. 17 1427L–FLASH–02/03 DC Characteristics Symbol ILI ILO ISB1 ISB2 ISB3 ICC (1)(2) ICC1 IPP1 ICC2 IPP2 ICC3 IPP3 VIL VIH VOL1 VOL2 Parameter Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Standby Current TTL VCC Standby Current TTL VCC Active Read Current VCC Programming Current (VPP = VCC) VPP Input Load Current VCC Programming Current (VPP = 5.0V ± 0.5V) VPP Programming Current (VPP = 5.0V ± 0.5V) VCC Programming Current (VPP = 12.0V ± 0.5V) VPP Programming Current (VPP = 12.0V ± 0.5V) Input Low Voltage Input High Voltage Output Low Voltage Output Low Voltage IOL = 2.1 mA IOL = 1.0 mA IOH = -400 µA VOH1 Output High Voltage IOH = -400 µA IOH = -400 µA IOH = -100 µA VOH2 Output High Voltage IOH = -100 µA IOH = -100 µA VCCQ < 2.6V VCCQ ≥ 2.6V VCCQ < 2.6V VCCQ ≥ 2.6V VCCQ - 0.2 [AT49BV/LV160(T)] 2.4 [AT49BV/LV160(T)] 2.4 [AT49BV/LV161(T)] VCCQ - 0.1 [AT49BV/LV160(T)] 2.5 [AT49BV/LV160(T)] 2.5 [AT49BV/LV161(T)] 2.0 0.45 0.20 VPP = 0V, VCC = 3.0V VPP = VCC = 3.0V Condition VIN = 0V to VCC VI/O = 0V to VCC CE = VCC - 0.3V to VCC CE = 2.0V to VCC CE = 2.0V to VCC, VCC = 2.85V f = 5 MHz; IOUT = 0 mA, 3.3V≤ VCC Min Max 10 10 10 1 10 30 45 10 10 40 5 40 6 0.6 Units µA µA µA mA µA mA mA µA µA mA mA mA mA V V V V V V V V V V Notes: 1. In the erase mode, ICC is 50 mA. 2. For 3.3V < VCC < 3.6V, ICC (max) = 35 mA 18 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) . AC Read Characteristics AT49BV/LV16X(T)-70 Symbol tRC tACC tCE(1) tOE(2) tDF(3)(4) tOH tRO Parameter Read Cycle Time Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to Output Float Output Hold from OE, CE or Address, whichever occurred first RESET to Output Delay 0 0 0 100 Min Max 70 70 70 35 25 0 0 0 100 AT49BV/LV16X(T)-90 Min Max 90 90 90 40 25 Units ns ns ns ns ns ns ns AC Read Waveforms(1)(2)(3)(4) tRC ADDRESS ADDRESS VALID CE tCE OE tOE tDF tACC tOH RESET HIGH Z tRO OUTPUT VALID OUTPUT Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 19 1427L–FLASH–02/03 Input Test Waveforms and Measurement Level Output Test Load Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol CIN COUT Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0V VOUT = 0V Note: 1. This parameter is characterized and is not 100% tested 20 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) . AC Byte/Word Load Characteristics Symbol tAS, tOES tAH tCS tCH tWP tDS tDH, tOEH tWPH Parameter Address, OE Setup Time Address Hold Time Chip Select Setup Time Chip Select Hold Time Write Pulse Width (WE or CE) Data Setup Time Data, OE Hold Time Write Pulse Width High Min 0 40 0 0 40 30 0 30 Max Units ns ns ns ns ns ns ns ns AC Byte/Word Load Waveforms WE Controlled CE Controlled 21 1427L–FLASH–02/03 Program Cycle Characteristics Symbol tBP tBPVPP tAS tAH tDS tDH tWP tWPH tWC tRP tRH tEC tECVPP tSEC tEPS Parameter Byte/Word Programming Time (VIHPP < VPP < 4.5V) Byte/Word Programming Time (VPP > 4.5V) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Write Pulse Width Write Pulse Width High Write Cycle Time Reset Pulse Width Reset High Time before Read Chip Erase Cycle Time (VPP < 4.5V) Chip Erase Cycle Time (VPP > 4.5V) Sector Erase Cycle Time Erase or Program Suspend Time 300 0 40 30 0 40 30 70 500 50 12 6 400 15 Min Typ 20 10 Max 200 100 Units µs µs ns ns ns ns ns ns ns ns ns seconds seconds ms µs Program Cycle Waveforms PROGRAM CYCLE OE CE tWP tWPH tBP WE tAS tAH 555 AAA tDH 555 ADDRESS 555 A0 -A19 tWC tDS AA 55 A0 INPUT DATA AA DATA Sector or Chip Erase Cycle Waveforms OE (1) CE tWP tWPH WE tAS tAH 555 AAA tDH 555 555 AAA Note 2 A0-A19 tWC tDS AA 55 WORD 1 80 WORD 2 AA WORD 3 55 WORD 4 Note 3 WORD 5 tEC DATA WORD 0 Notes: 1. OE must be high only when WE and CE are both low. 2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased. (See note 3 under Command Definitions.) 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. 22 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Data Polling Characteristics(1) Symbol tDH tOEH tOE tWR Notes: Parameter Data Hold Time OE Hold Time OE to Output Delay (2) Min 10 10 Typ Max Units ns ns ns Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 19. 0 ns Data Polling Waveforms Toggle Bit Characteristics(1) Symbol tDH tOEH tOE tOEHP tWR Notes: Parameter Data Hold Time OE Hold Time OE to Output Delay OE High Pulse Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 19. (2) Min 10 10 Typ Max Units ns ns ns 50 0 ns ns Toggle Bit Waveforms(1)(2)(3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 23 1427L–FLASH–02/03 Software Product Identification Entry(1) LOAD DATA AA TO ADDRESS 555 Sector Lockdown Enable Algorithm(1) LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 55 TO ADDRESS AAA LOAD DATA 90 TO ADDRESS 555 LOAD DATA 80 TO ADDRESS 555 ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5) LOAD DATA AA TO ADDRESS 555 Software Product Identification Exit(1)(6) LOAD DATA AA TO ADDRESS 555 OR LOAD DATA F0 TO ANY ADDRESS LOAD DATA 55 TO ADDRESS AAA LOAD DATA 60 TO SECTOR ADDRESS LOAD DATA 55 TO ADDRESS AAA EXIT PRODUCT IDENTIFICATION MODE(4) PAUSE 200 µs(2) LOAD DATA F0 TO ADDRESS 555 Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex) Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t Care). 2. Sector Lockdown feature enabled. EXIT PRODUCT IDENTIFICATION MODE(4) Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex) Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t Care). A1 - A19 = VIL. Manufacturer Code is read for A0 = VIL; Device Code is read for A0 = VIH. Additional Device Code is read for address 0003H The device does not remain in identification mode if powered down. The device returns to standard operation mode. Manufacturer Code: 1FH(x8); 001FH(x16) Device Code: C0H (x8) - AT49BV/LV16X; 00C0H (x16) - AT49BV/LV16X; C2H (x8) - AT49BV/LV16XT; 00C2H (x16) - AT49BV/LV16XT. Additional Device Code: 08H (x8) - AT49BV/LV16X(T) 0008H (x16) - AT49BV/LV16X(T) Either one of the Product ID Exit commands can be used. 2. 3. 4. 5. 6. 24 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) AT49BV160(T)/161(T) Ordering Information tACC (ns) 70 90 70 90 70 90 70 90 ICC (mA) Active 25 25 25 25 25 25 25 25 Standby 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Ordering Code AT49BV160-70CI AT49BV160-70TI AT49BV160-90CI AT49BV160-90TI AT49BV160T-70CI AT49BV160T-70TI AT49BV160T-90CI AT49BV160T-90TI AT49BV161-70CI AT49BV161-70TI AT49BV161-90CI AT49BV161-90TI AT49BV161T-70CI AT49BV161T-70TI AT49BV161T-90CI AT49BV161T-90TI Package 45C1 48T 45C1 48T 45C1 48T 45C1 48T 48C5 48T 48C5 48T 48C5 48T 48C5 48T Operation Range Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) AT49LV160(T)/161(T) Ordering Information tACC (ns) 90 70 70 ICC (mA) Active 25 25 25 Standby 0.01 0.01 0.01 Ordering Code AT49LV160-90TI AT49LV161-70CI AT49LV161-70TI AT49LV161T-70CI AT49LV161T-70TI Package 48T 48C5 48T 48C5 48T Operation Range Industrial (-40° to 85°C) Industrial (-40° to 85°C) Industrial (-40° to 85°C) Package Type 45C1 48C5 48T 45-ball, Plastic Chip-size Ball Grid Array Package (CBGA) 48-ball, Plastic Chip-size Ball Grid Array Package (CBGA) 48-lead, Plastic Thin Small Outline Package (TSOP) 25 1427L–FLASH–02/03 Packaging Information 45C1 – CBGA Dimensions in Millimeters and (Inches). Controlling dimension: millimeters. 6.60 (0.260) 6.40 (0.252) A1 ID 7.60 (0.299) 7.40 (0.291) 0.15 (0.006)MIN 1.20 (0.047) MAX 0.625 (0.025) REF 8 7 6 5.25 (0.207) 5 4 3 2 1 1.875(0.074) REF A B C 3.75 (0.148) D 0.75 (0.0295) BSC NON-ACCUMULATIVE E F 0.30 (0.014) DIA BALL TYP 0.75 (0.0295) BSC NON-ACCUMULATIVE 4/11/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 45C1, 45-ball (8 x 6 Array), 0.75 mm Pitch, 6.5 x 7.5 x 1.2 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 45C1 REV. A R 26 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) 48C5 – CBGA Dimensions in Millimeters and (Inches). Controlling dimension: millimeters. 6.10 (0.240) 5.90 (0.232) A1 ID 8.10 (0.319) 7.90 (0.311) 0.25 (0.010)MIN TOP VIEW 1.20 (0.047) MAX SIDE VIEW 1.00(0.039) REF 6 4.00(0.157) 5 4 3 2 1 1.20 (0.047) REF A B C 0.80 (0.0315) BSC NON-ACCUMULATIVE D E F G H 5.60 (0.220) 0.80 (0.0315) BSC NON-ACCUMULATIVE 0.40 (0.016) DIA BALL TYP BOTTOM VIEW 10/18/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 48C5, 48-ball (6 x 8 Array), 0.80 mm Pitch, 6 x 8 x 1.2 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 48C5 REV. A R 27 1427L–FLASH–02/03 48T – TSOP PIN 1 0º ~ 8º c Pin 1 Identifier D1 D L e b L1 E A2 A SEATING PLANE GAGE PLANE A1 SYMBOL A A1 A2 Notes: 1. This package conforms to JEDEC reference MO-142, Variation DD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. D D1 E L L1 b c e COMMON DIMENSIONS (Unit of Measure = mm) MIN – 0.05 0.95 19.80 18.30 11.90 0.50 NOM – – 1.00 20.00 18.40 12.00 0.60 0.25 BASIC 0.17 0.10 0.22 – 0.50 BASIC 0.27 0.21 MAX 1.20 0.15 1.05 20.20 18.50 12.10 0.70 Note 2 Note 2 NOTE 10/18/01 2325 Orchard Parkway San Jose, CA 95131 TITLE 48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. 48T REV. B R 28 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 Atmel Headquarters Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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Blvd. Colorado Springs, CO 80906 TEL 1(719) 576-3300 FAX 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland TEL (44) 1355-803-000 FAX (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 e-mail literature@atmel.com Web Site http://www.atmel.com © Atmel Corporation 2003. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. ATMEL ® i s the registered trademark of Atmel. Other terms and product names may be the trademarks of others. Printed on recycled paper. 1427L–FLASH–02/03 /xM