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AT59C22-10PI-2.7

AT59C22-10PI-2.7

  • 厂商:

    ATMEL(爱特梅尔)

  • 封装:

  • 描述:

    AT59C22-10PI-2.7 - 4-Wire Serial EEPROMs - ATMEL Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
AT59C22-10PI-2.7 数据手册
Features • Low Voltage and Standard Voltage Operation – 5.0 (VCC = 4.5V to 5.5V) – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V) User Selectable Internal Organization – 1K: 128 x 8 or 64 x 16 – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16 4-Wire Serial Interface Self-Timed Write Cycle (10 ms max) High Reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years – ESD Protection: >4000V 8-Pin PDIP and 8-Pin EIAJ SOIC Packages • • • • 4-Wire Serial EEPROMs 1K (128 x 8 or 64 x 16) 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16) • Description The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically Erasable Programmable Read Only Memory) organized as 64/128/256 words of 16 bits each, when the ORG Pin is connected to VCC and 128/256/512 words of 8 bits each when it is tied to ground. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC packages. The AT59C11/22/13 is enabled through the Chip Select pin (CS), and accessed via a 4-wire serial interface consisting of Data Input (DI), Data Output (DO), and Clock (CLK). Upon receiving a READ instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO, the WRITE cycle is completely selftimed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state. Ready/Busy status can be monitored upon completion of a programming operation by polling the Ready/Busy pin. The AT59C11/22/13 is available in 5.0V ± 10%, 2.7V to 5.5V and 2.5V to 5.5V versions. AT59C11 AT59C22 AT59C13 Pin Configurations Pin Name CS CLK DI DO GND VCC ORG RDY/BUSY Function Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Power Supply Internal Organization Status Output 8-Pin SOIC 8-Pin PDIP 4-Wire, 1K Serial E2PROM Rev. 0173K–07/98 1 Absolute Maximum Ratings* Operating Temperature .................................. -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C Voltage on Any Pin with Respect to Ground .....................................-1.0V to +7.0V Maximum Operating Voltage........................................... 6.25V DC Output Current........................................................ 5.0 mA *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Block Diagram(1) Note: 1. When the ORG pin is connected to VCC, the x 16 organization is selected. When it is connected to ground, the x 8 organization is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x 16 organization. 2 AT59C11/22/13 AT59C11/22/13 Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted). Test Conditions COUT CIN Note: Output Capacitance (DO) Input Capacitance (CS, CLK, DI, RDY/BUSY) 1. This parameter is characterized and is not 100% tested. Max 5 5 Units pF pF Conditions VOUT = 0V VIN = 0V DC Characteristics Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V, TAC = 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted). Symbol VCC1 VCC2 VCC3 VCC4 ICC Parameter Supply Voltage Supply Voltage Supply Voltage Supply Voltage Supply Current VCC = 5.0V READ at 1.0 MHz WRITE at 1.0 MHz ISB1 ISB2 ISB3 IIL IOL VIL1 VIH1(1) VIL2(1) VIH2(1) VOL1 VOH1 VOL2 VOH2 Note: (1) Test Condition Min 1.8 2.5 2.7 4.5 Typ Max 5.5 5.5 5.5 5.5 Units V V V V mA mA µA µA µA µA µA V V V V 0.5 0.5 6.0 6.0 21.0 0.1 0.1 -0.6 2.0 -0.6 VCC x 0.7 2.0 2.0 10.0 10.0 30.0 1.0 1.0 0.8 VCC + 1 VCC x 0.3 VCC + 1 0.4 Standby Current Standby Current Standby Current Input Leakage Output Leakage Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage VCC = 2.5V VCC = 2.7V VCC = 5.0V VIN = 0V to VCC VIN = 0V to VCC 4.5V ≤ VCC ≤ 5.5V 2.5V ≤ VCC ≤ 2.7V 4.5V ≤ VCC ≤ 5.5V 2.5V ≤ VCC ≤ 2.7V CS = 0V CS = 0V CS = 0V IOL = 2.1 mA IOH = 0.4 mA IOL = 0.15 mA IOH = -0.1 mA 2.4 0.2 VCC - 0.2 1. VIL min and VIH max are reference only and are not tested. 3 AC Characteristics Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +2.5V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted). Symbol Parameter Test Condition 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V Min 0 0 0 0 250 250 500 1000 250 250 500 1000 250 250 500 1000 50 50 100 200 100 100 200 400 0 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC 4.5V ≤ VCC 2.7V ≤ VCC 2.5V ≤ VCC 1.8V ≤ VCC ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V ≤ 5.5V 0.1 1M 100 100 200 400 250 250 500 1000 250 250 500 1000 250 250 500 1000 100 100 200 400 10 Typ Max 1 1 0.5 0.25 Units fCLK CLK Clock Frequency MHz tCKH CLK High Time ns tCKL CLK Low Time ns tCS Minimum CS Low Time ns tCSS CS Setup Time Relative to SK ns tDIS DI Setup Time Relative to SK ns tCSH CS Hold Time Relative to SK ns tDIH DI Hold Time Relative to SK ns tPD1 Output Delay to ‘1’ AC Test ns tPD0 Output Delay to ‘0’ AC Test ns tRBD RDY/BUSY Delay to Status Valid AC Test ns tCZ CS to DO in High Impedance Write Cycle Time (1) AC Test CS = VIL ns tWC Endurance ms Write Cycles 5.0V, 25°C, Page Mode Note: 1. This paramter is characterized and is not 100% tested. 4 AT59C11/22/13 AT59C11/22/13 Instruction Set for the AT59C11 Instruction READ EWEN WRITE ERAL WRAL EWDS SB 1 1 1 1 1 1 Op Code 10XX 0011 X1XX 0010 0001 0000 Address x8 A6 - A0 XXXXXXX A6 - A0 XXXXXXX XXXXXXX XXXXXXX x 16 A5 - A0 XXXXXX A5 - A0 XXXXXX XXXXXX XXXXXX D7 - D0 D15 - D0 D7 - D0 D15 - D0 x8 Data x 16 Comments Reads data stored in memory, at specified address. Write enable must precede all programming modes. Writes memory location An - A0. Erases all memory locations. Valid only at VCC = 4.5V to 5.5V. Writes all memory locations. Valid only at VCC = 4.5V to 5.5V. Disables all programming instructions. Instruction Set for the AT59C22 Instruction READ EWEN WRITE ERAL WRAL SB 1 1 1 1 1 Op Code 10XX 0011 X1XX 0010 0001 Address x8 A7 - A0 XXXXXXXX A7 - A0 XXXXXXXX XXXXXXXX x 16 A6 - A0 XXXXXXX A6 - A0 XXXXXXX XXXXXXX D7 - D0 D15 - D0 D7 - D0 D15 - D0 x8 Data x 16 Comments Reads data stored in memory, at specified address. Write enable must precede all programming modes. Writes memory location An - A0. Erases all memory locations. Valid only at VCC = 4.5V to 5.5V. Writes all memory locations. Valid when VCC = 5.0V ± 10% and Disable Register cleared. Disables all programming instructions. EWDS 1 0000 XXXXXXXX XXXXXXX 5 Instruction Set for the AT59C13 Instruction READ EWEN WRITE ERAL WRAL SB 1 1 1 1 1 Op Code 10XX 0011 X1XX 0010 0001 Address x8 A8 - A0 XXXXXXXXX A8 - A0 XXXXXXXXX XXXXXXXXX x 16 A7 - A0 XXXXXXXX A7 - A0 XXXXXXXX XXXXXXXX D7 - D0 D15 - D0 D7 - D0 D15 - D0 x8 Data x 16 Comments Reads data stored in memory, at specified address. Write enable must precede all programming modes. Writes memory location An - A0. Erases all memory locations. Valid only at VCC = 4.5V to 5.5V. Writes all memory locations. Valid when VCC = 5.0V ± 10% and Disable Register cleared. Disables all programming instructions. EWDS 1 0000 XXXXXXXXX XXXXXXXX 6 AT59C11/22/13 AT59C11/22/13 Functional Description The AT59C11/22/13 are accessed via a simple and versatile 4-wire serial communication interface. Device operation is controlled by six instructions issued by the host processor. A valid instruction starts with a rising edge of CS and consists of a Start Bit (logic ‘1’) followed by the appropriate Op Code and the desired memory Address location. READ (READ): The Read (READ) instruction contains the Address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin DO. Output data changes are synchronized with the rising edges of serial clock CLK. It should be noted that a dummy bit (logic ‘0’) precedes the 8- or 16-bit data output string. ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the Erase/Write Enable state, programming remains enabled until an Erase/Write Disable (EWDS) instruction is executed or VCC power is removed from the part. WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The Ready/Busy status of the AT59C11/22/13 can be determined by polling the RDY/BUSY p in. A logic ‘0’ at RDY/BUSY indicates that programming is still in progress. A logic ‘1’ indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the part is ready for further instructions. ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic ‘1’ state and is primarily used for testing purposes. The Ready/Busy status of the AT59C11/22/13 can be determined by polling the RDY/BUSY pin. The ERAL instruction is valid only at VCC = 5.0V ± 10%. WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction. The Ready/Busy s tatus of the AT59C11/22 /1 3 can be de termi ned by pol ling the RDY/BUSY pin. The WRAL instruction is valid only at VCC = 5.0V ± 10%. E RASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming modes and should be executed after all programming operations. The operation of the READ instruction is independent of both the EWEN and EWDS instructions and can be executed at any time. Timing Diagrams Synchronous Data Timing Note: 1. This is the minimum CLK period. 7 Organization Key for Timing Diagrams Density 1K I/O AN DN x8 A6 D7 x 16 A5 D15 x8 A7 D7 Density 2K x 16 A6 D15 x8 A8 D7 Density 4K x 16 A7 D15 READ Timing CS CLK DI 1 1 0 0 0 AN ... A0 0 DO HIGH-Z DN ... D0 WRITE Timing CS CLK DI 1 X 1 0 0 AN ... A0 DN ... D0 tRBD 1 RDY/BUSY tWC EWEN/EWDS Timing CS CLK DI 1 0 0 * X X X X X X X ENABLE = 11 *DISABLE = 00 8 AT59C11/22/13 AT59C11/22/13 ERAL Timing CS CLK DI 1 0 0 1 X X X X X X X tRBD 1 RDY/BUSY tWC WRAL Timing CS CLK DI 1 0 0 0 1 X X X X X X X DN ... D0 tRBD 1 RDY/BUSY tWC 9 AT59C11 Ordering Information tWC (max) (ms) 10 ICC (max) (µA) 2000 ISB (max) (µA) 30.0 30.0 10 800 10.0 10.0 10 600 10.0 10.0 fMAX (kHz) 1000 1000 1000 1000 500 500 Ordering Code AT59C11-10PC AT59C11W-10SC AT59C11-10PI AT59C11W-10SI AT59C11-10PC-2.7 AT59C11W-10SC-2.7 AT59C11-10PI-2.7 AT59C11W-10SI-2.7 AT59C11-10PC-2.5 AT59C11W-10SC-2.5 AT59C11-10PI-2.5 AT59C11W-10SI-2.5 Package 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 Operation Range Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Package Type 8P3 8S2 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) Options Blank -2.7 -2.5 Standard Device (4.5V to 5.5V) Low-Voltage (2.7V to 5.5V) Low-Voltage (2.5V to 5.5V) 10 AT59C11/22/13 AT59C11/22/13 AT59C22 Ordering Information tWC (max) (ms) 10 ICC (max) (µA) 2000 ISB (max) (µA) 30.0 30.0 10 800 10.0 10.0 10 600 10.0 10.0 fMAX (kHz) 1000 1000 1000 1000 500 500 Ordering Code AT59C22-10PC AT59C22W-10SC AT59C22-10PI AT59C22W-10SI AT59C22-10PC-2.7 AT59C22W-10SC-2.7 AT59C22-10PI-2.7 AT59C22W-10SI-2.7 AT59C22-10PC-2.5 AT59C22W-10SC-2.5 AT59C22-10PI-2.5 AT59C22W-10SI-2.5 Package 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 Operation Range Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Package Type 8P3 8S2 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) Options Blank -2.7 -2.5 Standard Device (4.5V to 5.5V) Low-Voltage (2.7V to 5.5V) Low-Voltage (2.5V to 5.5V) 11 AT59C13 Ordering Information tWC (max) (ms) 10 ICC (max) (µA) 2000 ISB (max) (µA) 30.0 30.0 10 800 10.0 10.0 10 600 10.0 10.0 fMAX (kHz) 1000 1000 1000 1000 500 500 Ordering Code AT59C13-10PC AT59C13W-10SC AT59C13-10PI AT59C13W-10SI AT59C13-10PC-2.7 AT59C13W-10SC-2.7 AT59C13-10PI-2.7 AT59C13W-10SI-2.7 AT59C13-10PC-2.5 AT59C13W-10SC-2.5 AT59C13-10PI-2.5 AT59C13W-10SI-2.5 Package 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 8P3 8S2 Operation Range Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Package Type 8P3 8S2 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) Options Blank -2.7 -2.5 Standard Device (4.5V to 5.5V) Low-Voltage (2.7V to 5.5V) Low-Voltage (2.5V to 5.5V) 12 AT59C11/22/13 AT59C11/22/13 Packaging Information 8P3, 8-Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-001 BA .400 (10.16) .355 (9.02) PIN 1 .280 (7.11) .240 (6.10) .037 (.940) .027 (.690) 8S2, 8-Lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) Dimensions in Inches and (Millimeters) .020 (.508) .012 (.305) PIN 1 .213 (5.41) .205 (5.21) .330 (8.38) .300 (7.62) .300 (7.62) REF .050 (1.27) BSC .210 (5.33) MAX SEATING PLANE .150 (3.81) .115 (2.92) .070 (1.78) .045 (1.14) .100 (2.54) BSC .212 (5.38) .203 (5.16) .015 (.380) MIN .022 (.559) .014 (.356) .080 (2.03) .070 (1.78) .013 (.330) .004 (.102) .325 (8.26) .300 (7.62) .012 (.305) .008 (.203) 0 REF 15 .430 (10.9) MAX 0 REF 8 .035 (.889) .020 (.508) .010 (.254) .007 (.178) 13
AT59C22-10PI-2.7
1. 物料型号: - AT59C11/22/13

2. 器件简介: - AT59C11/22/13提供1024/2048/4096位的串行EEPROM,组织为64/128/256个16位字或128/256/512个8位字。该器件适用于需要低功耗和低电压操作的许多工业和商业应用。

3. 引脚分配: - CS:芯片选择 - CLK:串行数据时钟 - DI:串行数据输入 - DO:串行数据输出 - GND:地 - Vcc:电源供应 - ORG:内部组织 - RDY/BUSY:状态输出

4. 参数特性: - 工作电压:5.0V ± 10%,2.7V至5.5V和2.5V至5.5V版本。 - 写入周期:最长10ms - 数据保持:100年 - 写入周期耐力:100万次 - ESD保护:> 4000V

5. 功能详解应用信息: - AT59C11/22/13通过4线串行接口进行访问,由主机处理器发出的六个指令控制操作。 - 读取(READ):读取指定地址存储的数据。 - 写入(WRITE):将数据写入指定内存位置。 - 擦除/写入启用(EWEN):在执行任何编程指令前必须先执行。 - 擦除所有(ERAL):将所有内存位置编程为逻辑“1”状态。 - 写入所有(WRAL):将所有内存位置编程为指令中指定的数据模式。 - 擦除/写入禁用(EWDS):禁用所有编程模式以防止意外数据干扰。

6. 封装信息: - 8P3:8引脚,0.300英寸宽,塑料双列直插式封装(PDIP) - 8S2:8引脚,0.200英寸宽,塑料海鸥翼小外形封装(EIAJ SOIC) - 封装选项包括标准设备(4.5V至5.5V)、低电压(2.7V至5.5V)和低电压(2.5V至5.5V)。
AT59C22-10PI-2.7 价格&库存

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