AT60142ET-DD20MMQ

AT60142ET-DD20MMQ

  • 厂商:

    ATMEL(爱特梅尔)

  • 封装:

  • 描述:

    AT60142ET-DD20MMQ - Rad Hard 512K x 8 Very Low Power CMOS SRAM - ATMEL Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
AT60142ET-DD20MMQ 数据手册
Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns (Preview) for 3.3V biased only (AT60142E) – 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption – Active: 810 mW (Max) @ 15 ns – Standby: 215 µW (Typ) Wide Temperature Range: -55 to +125°C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm 2 Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019 500 Mils Wide FP36 Package ESD Better than 4000V Rad Hard 512K x 8 Very Low Power CMOS SRAM AT60142E AT60142ET Description The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an extremely low standby supply current (Typical value = 65 µ A) with a fast access time at 15 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns specification. The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20 ns specification. The AT60142E/ET are processed according to the methods of the latest revision of the MIL PRF 38535 or ESA SCC 9000. It is produced on a radiation hardened 0.25 µm CMOS process. Note: 1. Preliminary: contact factory for availability. Rev. 4156F–AERO–06/04 1 AT60142E/ET Block Diagram Pin Configuration A0 A1 A2 A3 A4 CS I/O1 I/O2 Vcc GND I/O3 I/O4 WE A5 A6 A7 A8 A9 4156F–AERO–06/04 s l i M n i p 6 3 k c a p t a l F - 0 0 5 - 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE I/O8 I/O7 GND Vcc I/O6 I/O5 A14 A13 A12 A11 A10 VRef 2 Pin Description Table 1. Pin Names Name A0 - A18 I/O1 - I/O8 CS WE OE Vcc VRef GND Description Address Inputs Data Input/Output Chip Select Write Enable Output Enable Power Supply Internal Reference Voltage Output Ground Table 2. Truth Table(1) CS H L L L Note: WE X H L H OE X L X H Inputs/Outputs Z Data Out Data In Z Mode Deselect/ Power-down Read Write Output Disable 1. L=low, H=high, X= H or H, Z=high impedance. 3 AT60142E/ET 4156F–AERO–06/04 AT60142E/ET Decoupling Decoupling capacitors closed to the device AT60142 Vcc Vcc Recommended value: 100 nF 9 10 28 27 Recommended value: 100 nF Vcc GND GND Vcc Mandatory Capacitor VRef 19 Recommended value: 10 µF 4 4156F–AERO–06/04 Electrical Characteristics Absolute Maximum Ratings* Supply Voltage to GND Potential: ......................... -0.5V + 4.6V DC Input Voltage:.....................................GND -0.5V to 4.6V(1) DC Output Voltage High Z State: ................ GND -0.5V to 4.6V Storage Temperature: ................................... -65°C to + 150°C Output Current Into Outputs (Low): ............................... 20 mA Electro Statics Discharge Voltage: .... > 4001V (MIL STD 883D Method 3015.3) Note: 1. 7V for ET version. *NOTE: Stresses beyond those listed under "Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Military Operating Range Operating Voltage Military 3.3 + 0.3V Operating Temperature -55°C to + 125°C Recommended DC Operating Conditions Parameter Vcc GND VIL VIH Note: Description Supply voltage Ground Input low voltage Input high voltage Min 3 0.0 GND - 0.3 2.2 Typ 3.3 0.0 0.0 – Max 3.6 0.0 0.8 VCC + 0.3(1) Unit V V V V 1. 5.8V for ET version Capacitance Parameter Cin (1) Cout(1) Note: Description Input low voltage Output high voltage Min – – Typ – – Max 8 8 Unit pF pF 1. Guaranteed but not tested. 5 AT60142E/ET 4156F–AERO–06/04 AT60142E/ET DC Parameters Parameter IIX (1) IOZ(1) VOL (2) VOH (3) 1. 2. 3. Description Input leakage current Output leakage current Output low voltage Output high voltage Minimum -1 -1 – 2.4 Typical – – – – Maximum 1 1 0.4 – Unit µA µA V V GND < VIN < VCC , GND < VOUT < VCC Output Disabled. VCC min. IOL = 8 m A. VCC min. IOH = -4 mA. Consumption Symbol ICCSB (2) Description Standby supply current Standby supply current Dynamic operating current AT60142E -15 (1) AT60142ET-17 (1) 4 AT60142E -20 AT60142ET -20 (1) 4 Unit mA Value max ICCSB1 (3) 3 3 mA max ICCOP (4) 1. 2. 3. 4. 225 220 mA max Preliminary CS >VIH CS > VCC - 0.3V F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = G ND/V CC, VCC max. 6 4156F–AERO–06/04 AC Characteristics Temperature Range:................................................ -55 +125 °C Supply Voltage:........................................................ 3.3 +0.3V Input Pulse Levels: .................................................. GND to 3.0V Input Rise and Fall Times:....................................... 3ns (10 - 90%) Input and Output Timing Reference Levels: ............ 1.5V VRef Capacitor: ....................................................... 10 µF Output Loading IOL/IOH:............................................ See Figure 1 Figure 1. AC Test Loads Waveforms Data Retention Mode Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retention: 1. During data retention chip select CS must be held high within VCC to VCC -0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power-up and power-down transitions CS and OE must be kept between VCC + 0.3V and 70% of VCC. 4. The RAM can begin operation > t R ns after VCC reaches the minimum operation voltages (3V). Figure 2. Data Retention Timing 7 AT60142E/ET 4156F–AERO–06/04 AT60142E/ET Data Retention Characteristics Parameter VCCDR Description VCC for data retention Chip deselect to data retention time Operation recovery time Data retention current TAVAV = Read cycle time. CS = V CC, VIN = GND/VCC. Min 2.0 Typ TA = 25°C – Max – Unit V tCDR 0.0 – – ns tR ICCDR (2) 1. 2. tAVAV – (1) – 0.050 – 2.5 ns mA 8 4156F–AERO–06/04 Write Cycle Symbol TAVAW TAVWL TAVWH TDVWH TELWH TWLQZ TWLWH TWHAX TWHDX TWHQX Notes: Parameter Write cycle time Address set-up time Address valid to end of write Data set-up time CS low to write end Write low to high Z(1) Write pulse width Address hold from end of write Data hold time Write high to low Z(1) AT60142E-15(2) 15 0 10 7 10 7 10 0 3 3 AT60142E-20 AT60142ET-17(2) AT60142ET -20(2) 17 0 11 8 11 8 11 0 3 3 20 0 12 9 12 9 12 0 3 3 Unit ns ns ns ns ns ns ns ns ns ns Value min min min min min max min min min min 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.) 2. Preliminary. Read Cycle AT60142E-20 AT60142ET 20(2) 20 20 3 20 3 9 9 0 9 Symbol TAVAV TAVQV TAVQX TELQV TELQX TEHQZ TGLQV TGLQX TGHQZ Notes: Parameter Read cycle time Address access time Address valid to low Z Chip-select access time CS low to low Z CS high to high Z (1) Output Enable access time OE low to low Z(1) OE high to high Z (1) AT60142E-15(2) 15 15 3 15 3 7 7 0 7 AT60142ET-17(2) 17 17 3 17 3 8 8 0 8 Unit ns ns ns ns ns ns ns ns ns Value min max min max min max max min max 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.) 2. Preliminary. 9 AT60142E/ET 4156F–AERO–06/04 AT60142E/ET Figure 3. Write Cycle 1. WE Controlled, OE High During Write E Figure 4. Write Cycle 2. WE Controlled, OE Low E Figure 5. Write Cycle 3. CS Controlled(1) E Note: The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be referenced to the active edge of the signal that terminates the write. Data out is high impedance if OE= V IH. 10 4156F–AERO–06/04 Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = V IL, WE = VIH) Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH) 11 AT60142E/ET 4156F–AERO–06/04 AT60142E/ET Ordering Information Part Number AT60142E-DC20M-E AT60142E-DC20M AT60142E-DC20MMQ AT60142E-DC20SMV AT60142E-DC20SSB AT60142E-DD20M-E (1) (1) Temperature Range 25°C -55° to +125°C -55° to +125°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C Speed 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V 20 ns/3.3V Package FP36.5 FP36.5 FP36.5 FP36.5 FP36.5 Die Die Die Flow Engineering Samples Standard Mil QML Q QML V SCC B Engineering Samples QML Q QML V AT60142E-DD20MMQ AT60142E-DD20SMV (1) Preliminary AT60142E-DC15M-E AT60142E-DC15M AT60142E-DC15MMQ AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DD15M-E(1) AT60142E-DD15MMQ(1) AT60142E-DD15SMV (1) 25°C -55° to +125°C -55° to +125°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C -55° to +125°C -55° to +125°C 25°C -55° to +125°C -55° to +125°C (1) (1) 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 15 ns/3.3V 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 20 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. 17 ns/5V tol. FP36.5 FP36.5 FP36.5 FP36.5 FP36.5 Die Die Die FP36.5 FP36.5 FP36.5 FP36.5 FP36.5 Die Die Die FP36.5 FP36.5 FP36.5 FP36.5 FP36.5 Die Die Die Engineering Samples Standard Mil QML Q QML V SCC B Engineering Samples QML Q QML V Engineering Samples Standard Mil QML Q QML V SCC B Engineering Samples QML Q QML V Engineering Samples Standard Mil QML Q QML V SCC B Engineering Samples QML Q QML V AT60142ET-DC20M-E AT60142ET-DC20M AT60142ET-DC20MMQ AT60142ET-DC20SSV AT60142ET-DC20SSB AT60142ET-DD20M-E (1) AT60142ET-DD20MMQ AT60142ET-DD20SMS AT60142ET-DC17M-E AT60142ET-DC17M AT60142ET-DC17MMQ AT60142ET-DC17SSV AT60142ET-DC17SSB AT60142ET-DD17M-E (1) (1) AT60142ET-DD17MMQ Note: AT60142ET-DD17SMS (1) 1. Contact Atmel for availability. 12 4156F–AERO–06/04 Package Drawings 36-lead Flat Pack (500 Mils) 13 AT60142E/ET 4156F–AERO–06/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2004. A ll rights reserved. Atmel ® a nd combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4156F–AERO–06/04 /xM Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2004. A ll rights reserved. Atmel ® a nd combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4156F–AERO–06/04 /xM Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2004. A ll rights reserved. Atmel ® a nd combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4156F–AERO–06/04 /xM Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2004. A ll rights reserved. Atmel ® a nd combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4156F–AERO–06/04 /xM
AT60142ET-DD20MMQ
### 物料型号 - AT60142E/ET:两款低功耗CMOS静态RAM,由Atmel生产,以524,288 x 8位组织。

### 器件简介 - AT60142E:3.3V偏置时访问时间为15ns,不容忍5V,适用于需要快速计算和低功耗的应用,如航空电子、便携式仪器或嵌入式系统。 - AT60142ET:5V容忍版本,访问时间分别为17ns和20ns规格。

### 引脚分配 | 引脚号 | 引脚名称 | 描述 | | --- | --- | --- | | A0-A18 | 地址输入 | 用于选择RAM中的存储单元 | | I/O1-I/O8 | 数据输入/输出 | 读写操作中数据的输入输出引脚 | | CS | 芯片选择 | 用于激活或禁用芯片 | | WE | 写使能 | 控制是否允许写入操作 | | OE | 输出使能 | 控制是否允许输出数据 | | Vcc | 电源 | 供电引脚 | | VRef | 内部参考电压输出 | 提供参考电压 | | GND | 地 | 接地引脚 |

### 参数特性 - 工作电压:3.3V - 访问时间:15ns(AT60142E),17ns和20ns(AT60142ET) - 低功耗:活动模式810mW(最大值),待机模式215µW(典型值) - 宽温范围:-55至+125°C - TTL兼容输入输出 - 异步操作 - 0.25微米工艺设计 - 抗辐射能力,无单粒子锁定,总剂量测试高达300 krads(Si)

### 功能详解 - 该芯片提供了低功耗和快速访问时间的特点,结合了优秀的软错误保护能力,适用于军事和航空领域。

### 应用信息 - 适用于需要快速计算和低功耗的应用领域,例如航空电子、便携式仪器或嵌入式系统。

### 封装信息 - 500 Mils宽度的FP36封装。
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