AT93C46DN-SH-B

Features • Low-voltage and Standard-voltage Operation – 1.8 (VCC = 1.8V to 5.5V) • User-selectable Internal Organization – 1K: 128 x 8 or 64 x 16 Three-wire Serial Interface 2 MHz Clock Rate (5V) Self-timed Write Cycle (5 ms max) High Reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years • 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin mini-MAP (MLP 2x3), 8-lead TSSOP and 8-ball dBGA2 Packages • Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers • • • • Three-wire Serial EEPROM 1K (128 x 8 or 64 x 16) Description The AT93C46D provides 1024 bits of serial electrically erasable programmable readonly memory (EEPROM), organized as 64 words of 16 bits each (when the ORG pin is connected to VCC), and 128 words of 8 bits each (when the ORG pin is tied to ground). The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT93C46D is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin miniMAP (MLP 2x3), 8-lead TSSOP, and 8-lead dBGA2 packages. The AT93C46D is enabled through the Chip Select pin (CS) and accessed via a three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SK). Upon receiving a Read instruction at DI, the address is decoded and the data is clocked out serially on the DO pin. The Write cycle is completely self-timed, and no separate Erase cycle is required before Write. The Write cycle is only enabled when the part is in the Erase/Write Enable state. When CS is brought high following the initiation of a Write cycle, the DO pin outputs the Ready/Busy status of the part. The AT93C46D is available in 1.8 (1.8V to 5.5V) version. Table 0-1. Pin Name CS SK DI DO GND VCC ORG NC AT93C46D Pin Configurations Function Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Power Supply Internal Organization No Connect CS SK DI DO CS SK DI DO 8-lead SOIC 1 2 3 4 8 7 6 5 VCC NC ORG GND 8-lead dBGA2 VCC NC ORG GND 8 7 6 5 1 2 3 4 CS SK D1 D0 Bottom View 8-lead PDIP 1 2 3 4 8 7 6 5 VCC NC ORG GND 8-lead Ultra Thin mini-MAP (MLP 2x3) VCC NC ORG GND 8 7 6 5 CS SK 3 DI 4 DO 1 2 Bottom View 8-lead TSSOP CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC ORG GND 5193F–SEEPR–1/08 1. Absolute Maximum Ratings* Operating Temperature ......................................−55°C to +125°C Storage Temperature .........................................−65°C to +150°C Voltage on Any Pin with Respect to Ground ........................................ −1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V DC Output Current........................................................ 5.0 mA *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Figure 1-1. Block Diagram Notes: 1. When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is connected to ground, the “x 8” organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the internal 1 Meg ohm pullup, then the “x 16” organization is selected. 2. For the AT93C46D, if the “x 16” organization is the mode of choice and pin 6 (ORG) is left unconnected, Atmel® recommends using AT93C46E device. For more details, see the AT93C46E datasheet. 2 AT93C46D 5193F–SEEPR–1/08 AT93C46D Table 1-1. Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V (unless otherwise noted) Symbol COUT CIN Note: Test Conditions Output Capacitance (DO) Input Capacitance (CS, SK, DI) 1. This parameter is characterized and is not 100% tested. Max 5 5 Units pF pF Conditions VOUT = 0V VIN = 0V Table 1-2. DC Characteristics Applicable over recommended operating range from: TAI = −40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted) Symbol VCC1 VCC2 VCC3 ICC ISB1 ISB2 ISB3 IIL IOL VIL1 (1) Parameter Supply Voltage Supply Voltage Supply Voltage Test Condition Min 1.8 2.7 4.5 READ at 1.0 MHz Typ Max 5.5 5.5 5.5 Unit V V V mA mA µA µA µA µA µA V 0.5 0.5 0.4 6.0 10.0 0.1 0.1 2.0 2.0 1.0 10.0 15.0 1.0 1.0 0.8 VCC + 1 VCC x 0.3 VCC + 1 0.4 Supply Current Standby Current Standby Current Standby Current Input Leakage Output Leakage Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage VCC = 5.0V VCC = 1.8V VCC = 2.7V VCC = 5.0V VIN = 0V to VCC VIN = 0V to VCC WRITE at 1.0 MHz CS = 0V CS = 0V CS = 0V VIH1(1) VIL2(1) VIH2 (1) 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 2.7V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 2.7V IOL = 2.1 mA IOH = −0.4 mA IOL = 0.15 mA IOH = −100 µA −0.6 2.0 −0.6 VCC x 0.7 V V V VOL1 VOH1 VOL2 VOH2 Note: 2.4 0.2 VCC – 0.2 V V 1. VIL min and VIH max are reference only and are not tested. 3 5193F–SEEPR–1/08 Table 1-3. AC Characteristics Applicable over recommended operating range from TAI = −40°C to + 85°C, VCC = +2.7V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted) Symbol fSK Parameter SK Clock Frequency Test Condition 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V Relative to SK 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V Min 0 0 0 250 250 1000 250 250 1000 250 250 1000 50 50 200 100 100 400 0 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 0.1 1M 3 100 100 400 250 250 1000 250 250 1000 250 250 1000 100 150 400 5 Typ Max 2 1 0.25 Units MHz tSKH SK High Time ns tSKL SK Low Time ns tCS Minimum CS Low Time ns tCSS CS Setup Time ns tDIS tCSH tDIH DI Setup Time CS Hold Time DI Hold Time Relative to SK Relative to SK Relative to SK ns ns ns tPD1 Output Delay to “1” AC Test ns tPD0 Output Delay to “0” AC Test ns tSV CS to Status Valid AC Test ns tDF tWP Endurance (1) CS to DO in High Impedance Write Cycle Time 5.0V, 25°C AC Test CS = VIL ns ms Write Cycles Note: 1. This parameter is ensured by characterization. 4 AT93C46D 5193F–SEEPR–1/08 AT93C46D Table 1-4. Instruction Set for the AT93C46D Op Code 10 00 11 01 00 00 00 Address x8 A6 – A0 11XXXXX A6 – A0 A6 – A0 10XXXXX 01XXXXX 00XXXXX x 16 A5 – A0 11XXXX A5 – A0 A5 – A0 10XXXX 01XXXX 00XXXX D7 – D0 D15 – D0 D7 – D0 D15 – D0 x8 Data x 16 Comments Reads data stored in memory, at specified address Write enable must precede all programming modes Erases memory location An – A0 Writes memory location An – A0 Erases all memory locations. Valid only at VCC = 4.5V to 5.5V Writes all memory locations. Valid only at VCC = 4.5V to 5.5V Disables all programming instructions Instruction READ EWEN ERASE WRITE ERAL WRAL EWDS Note: SB 1 1 1 1 1 1 1 The Xs in the address field represent DON’T CARE values and must be clocked. 2. Functional Description The AT93C46D is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of CS and consists of a start bit (logic “1”) followed by the appropriate op code and the desired memory address location. READ (READ): The Read (READ) instruction contains the address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or 16-bit data output string. ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part. ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1” state. The self-timed erase cycle starts once the Erase instruction and address are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic “1” at pin DO indicates that the selected memory location has been erased and the part is ready for another instruction. WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The self-timed programming cycle tWP starts after the last bit of data is received at serial data input pin DI. The DO pin outputs the Read/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the 5 5193F–SEEPR–1/08 p art is ready for further instructions. A R eady/Busy status cannot be obtained if the CS is brought high after the end of the self-timed programming cycle tWP. ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%. WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%. ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming modes and should be executed after all programming operations. The operation of the Read instruction is independent of both the EWEN and EWDS instructions and can be executed at any time. 6 AT93C46D 5193F–SEEPR–1/08 AT93C46D 3. Timing Diagrams Figure 3-1. Synchronous Data Timing μs Note: 1. This is the minimum SK period. Table 3-1. Organization Key for Timing Diagrams AT93C46D (1K) I/O AN DN x8 A6 D7 x 16 A5 D15 Figure 3-2. READ Timing tCS High Impedance 7 5193F–SEEPR–1/08 Figure 3-3. EWEN Timing CS tCS SK DI 1 0 0 1 1 ... Figure 3-4. EWDS Timing CS tCS SK DI 1 0 0 0 0 ... Figure 3-5. WRITE Timing CS tCS SK DI 1 0 1 AN ... A0 DN ... D0 DO HIGH IMPEDANCE BUSY READY tWP 8 AT93C46D 5193F–SEEPR–1/08 AT93C46D Figure 3-6. WRAL Timing(1) CS tCS SK DI 1 0 0 0 1 ... DN ... D0 DO HIGH IMPEDANCE BUSY READY tWP Note: 1. Valid only at VCC = 4.5V to 5.5V. Figure 3-7. ERASE Timing tCS CS CHECK STATUS STANDBY SK DI 1 1 1 AN AN-1 AN-2 ... A0 tSV tDF HIGH IMPEDANCE READY DO HIGH IMPEDANCE BUSY tWP 9 5193F–SEEPR–1/08 Figure 3-8. ERAL Timing(1) tCS CS CHECK STATUS STANDBY SK DI 1 0 0 1 0 tSV tDF HIGH IMPEDANCE READY DO HIGH IMPEDANCE BUSY tWP Note: 1. Valid only at VCC = 4.5V to 5.5V. 10 AT93C46D 5193F–SEEPR–1/08 AT93C46D 4. AT93C46D Ordering Information Ordering Code AT93C46D-PU (Bulk form only) AT93C46DN-SH-B AT93C46DN-SH-T (1) Voltage 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 (NiPdAu Lead finish) (NiPdAu Lead finish) Package 8P3 8S1 8S1 8A2 8A2 8Y6 8U3-1 Die Sale Operation Range (2) AT93C46D-TH-B(1) (NiPdAu Lead finish) AT93C46D-TH-T(2) (NiPdAu Lead finish) AT93C46DY6-YH-T(2) (NiPdAu Lead finish) AT93C46DU3-UU-T AT93C46D-W-11(3) Notes: 1. “-B” denotes bulk (2) Lead-free/Halogen-free/ Industrial Temperature (−40°C to 85°C) Industrial (−40°C to 85°C) 2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, and dBGA2 = 5K per reel. 3. Available in tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial Interface Marketing. Package Type 8P3 8S1 8A2 8U3-1 8Y6 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8-ball, Die Ball Grid Array Package (dBGA2) 8-lead, 2.00 mm x 3.00 mm Body, 0.50mm Pitch, Ultra-Thin Mini-MAO, Dual No Lead Package. (DFN), (MLP 2x3mm) Options −1.8 Low Voltage (1.8V to 5.5V) 11 5193F–SEEPR–1/08 5. Part Marking Scheme 5.1 AT93C46D 8-PDIP Seal Year | Seal Week Y = SEAL YEAR 6: 2006 0: 2010 7: 2007 8: 2008 9: 2009 1: 2011 2: 2012 3: 2013 WW = SEAL WEEK 02 = Week 2 04 = Week 4 :: : :::: : :: : :::: :: 50 = Week 50 52 = Week 52 Lot Number to Use ALL Characters in Marking BOTTOM MARK No Bottom Mark TOP MARK | | | |---|---|---|---|---|---|---|---| A T M L U Y W W |---|---|---|---|---|---|---|---| 4 6 D 1 |---|---|---|---|---|---|---|---| * Lot Number |---|---|---|---|---|---|---|---| | Pin 1 Indicator (Dot) 5.2 AT93C46D 8-SOIC Seal Year | Seal Week Y = SEAL YEAR 6: 2006 0: 2010 7: 2007 8: 2008 9: 2009 1: 2011 2: 2012 3: 2013 WW = SEAL WEEK 02 = Week 2 04 = Week 4 :: : :::: : :: : :::: :: 50 = Week 50 52 = Week 52 Lot Number to Use ALL Characters in Marking BOTTOM MARK No Bottom Mark TOP MARK | | | |---|---|---|---|---|---|---|---| A T M L H Y W W |---|---|---|---|---|---|---|---| 4 6 D 1 |---|---|---|---|---|---|---|---| * Lot Number |---|---|---|---|---|---|---|---| | Pin 1 Indicator (Dot) 12 AT93C46D 5193F–SEEPR–1/08 AT93C46D 5.3 AT93C46D 8-TSSOP Pin 1 Indicator (Dot) | |---|---|---|---| * H Y W W |---|---|---|---|---| 4 6 D 1* |---|---|---|---|---| BOTTOM MARK |---|---|---|---|---|---|---| C 0 0 |---|---|---|---|---|---|---| A A A A A A A |---|---|---|---|---|---|---| LINE 2-------> 46DU YMTC |