ATA2516-6AQ

Features • • • • • Supply Voltage: 4.5 V to 5.5 V Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Carrier Frequency is 56 kHz; Adjusted by Zener Diode Fusing ±4% TTL and CMOS Compatible Applications • All Kinds of IR Remote Control Systems • Carrier Frequency Modulated Transmission Systems IR Receiver ASIC ATA2516 Benefits • No External Components Needed • Enhanced Immunity Against Ambient Light Disturbances Description The IC ATA2516 is a complete IR receiver for data communication systems. The device is developed and optimized for use in carrier frequency modulated transmission applications. Its function can be described using the block diagram in Figure 1 on page 2. The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo current signals are transformed into a voltage by a special circuit which is optimized for low noise application. After amplification by a Controlled Gain Amplifier (CGA), the signals pass a tuned integrated narrow bandpass filter with a center frequency f 0 e quivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of changing environmental conditions (ambient light, modulated lamps etc.). A 7-bit digital-to-analog converter is used to adjust the gain of the controlled gain amplifier. Other special features serve to adapt to the current application to secure best transmission quality. The ATA2516 operates in a voltage supply range of 4.5 V - 5.5 V. Rev. 4801B–AUTO–10/04 Figure 1. Block Diagram VS IN Input CGA and filter Demodulator OUT Microcontroller Oscillator Carrier frequency f0 AGC/ATC and digital control Modulated IR signal min 6 pulses GND Pin Configuration Figure 2. Pinning TSSOP8 VS NC OUT TEST 1 2 3 4 8 7 6 5 NC NC GND IN Pin Description Pin 1 2 3 4 5 6 7 8 Symbol VS NC OUT TEST IN GND NC NC Function Supply voltage Not connected Data output Test signal (not connected or connected to GND) Input PIN diode Ground Not connected Not connected 2 ATA2516 4801B–AUTO–10/04 ATA2516 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current (DC current IIN_DC = 0) Input voltage Input DC current at VS = 5 V Output voltage Operating temperature Storage temperature Power dissipation at Tamb = 25°C Symbol VS IS VIN IIN_DC VO Tamb Tstg Ptot Value -0.3 to 6 0.5 -0.3 to VS 0.8 -0.3 to VS -40 to +85 -40 to +125 10 Unit V mA V mA V °C °C mW Thermal Resistance Parameters Junction ambient TSSOP8 Symbol RthJA Value TBD Unit K/W Electrical Characteristics Tamb = 25°C, VS = 5 V unless otherwise specified. No. 1 1.1 1.2 Parameters Supply Supply-voltage range Supply current IIN_DC = 0; see Figure 6 on page 7 IIN_DC = 0; see Figure 6 on page 7 Tamb = -40°C to 85°C Tamb = 25°C; see Figure 3 on page 5 RLoad = 2.4 kΩ 1 1 VS IS IS 4.5 5 0.29 5.5 0.34 V mA C A Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.3 2 2.1 2.2 2.3 3 3.1 3.2 3.3 Supply current Output Internal pull-up resistor Output voltage low Output voltage high Input Maximum input DC current Maximum input DC current Number of pulses required 1 0.4 mA B 1, 3 3, 6 3, 1 RPU VOL VOH 65 100 100 135 250 VS kΩ mV V A A A VS 0.25 VIN = 0; see Figure 8 on page 7 VIN = 0; Tamb = 85°C 5 5 5 IIN_DCMAX IIN_DCMAX 580 490 6 760 650 µA µA A C A *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin. 3 4801B–AUTO–10/04 Electrical Characteristics (Continued) Tamb = 25°C, VS = 5 V unless otherwise specified. No. Parameters Test Conditions Test signal: see Figure 4 on page 6 VS = 5 V, Tamb = 25°C, IIN_DC = 0 µA; square pp, burst N = 6, f = f0; tPER = 5 ms, Figure 7; BER = 80% Test signal: see Figure 4 on page 6 VS = 5 V, Tamb = 25°C, IIN_DC = 650 µA; square pp, burst N = 6, f = f0; tPER = 5 ms, Figure 7; BER = 80% VIN = 0 Pin Symbol Min. Typ. Max. Unit Type* 3.4 Minimum detection threshold current 5 IEemin 2.5 4 6.4 nA A 3.5 Minimum detection threshold current 5 IEemin 20 30 60 nA A 3.6 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 Photodiode input capacitance Center frequency of bandpass Center frequency zapping accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth Quiescent value of gain control counter Single gain step Switch-on delay Pulse width 5, 6 70 pF D Controlled Amplifier and Filter 3 f0 = 56 kHz Tamb = -40°C to 85°C -3 dB; f0 = 56 kHz; see Figure 9 on page 8 VIN = 0; IIN DC = 0 3 3 3 f0 f0ZAPP f0tol B -4 -10 4 56 f0 f0 8 20 0.35 VS = 5 V, Tamb = 25°C, IIN = 20 nA pp, N = 6 VS = 5 V, Tamb = 25°C, IIN = 20 nA pp, N = 6 3 3 tdon tpo 4 4 6 8 8 11 dB/c Per Per A A +4 +7 14 kHz % % kHz A A C C A *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin. ESD Latch-up Reliability Burn-in All pins: 1500 V HBM; 100 MM, MIL-STD-883C, Method 3015.7 According JEDEC78 Class2 (HT) HTOL (1000 h) at Tj = 150°C in molded TSSOP8 plastic package (2 lots) With 800 samples from 2 lots 4 ATA2516 4801B–AUTO–10/04 ATA2516 Figure 3. Application Circuit VDD = 4.5 V to 5.5 V R1 = 220 Ω IS VS IN IIN GND RPU ATA2516 OUT IOmax Microcontroller VIN IIN_DC C1 = 4.7 µF VO 5 4801B–AUTO–10/04 Figure 4. Test Circuit IEe = ∆U1/400 KΩ ∆ U1 400 kΩ IIN_DC VDD = 5 V 1 nF R1 = 220 Ω 20 kΩ IIN I IN VPULSE 1 nF ∆ U2 IN VS ATA2516 GND OUT 20 kΩ f0 6 DC + tPER = 5 ms IIN_DC = ∆U2 /40 kΩ C1 4.7 µF Figure 5. Pulse Diagram IIN Repetition rate Burst, N pulses (for example 5 ms) VOUT tpo tdon tdoff 6 ATA2516 4801B–AUTO–10/04 ATA2516 Typical Electrical Curves Figure 6. IS versus Temperature, VS = 5 V 300 290 VS = 5 V 280 IS (µA) 270 260 250 240 -40 -20 0 20 40 60 80 100 Temperature (°C) Figure 7. IEemin versus IIN_DC, VS = 5 V, Tamb = 25°C 100 IEemin (nA) VS = 5 V; f = f0 10 1 1 10 100 1000 IIN_DC (µA) Figure 8. VIN versus IIN_DC, VS = 5 V, Tamb = 25°C 3500 3000 VS = 5 V 2500 VIN (mV) 2000 1500 1000 500 0 -500 0 100 200 300 400 500 600 700 800 VIN = 0 V IIN_DC (µA) 7 4801B–AUTO–10/04 Figure 9. Typical Bandpass Curve at Tamb = 25°C 1.10 1.00 Relative Amplitude 0.90 0.80 0.70 0.60 0.50 0.40 51 53 55 57 59 61 63 f0 (kHz) 8 ATA2516 4801B–AUTO–10/04 ATA2516 Ordering Information Extended Type Number ATA2516-6AQ Package TSSOP8 Remarks IR receiver Package Information 9 4801B–AUTO–10/04 A tmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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