ATA2525R540-DDW

Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) • High Immunity Against Disturbances from Daylight and Lamps • Small Size and Innovative Pad Layout • Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted by Zener Diode Fusing • TTL and CMOS Compatible • Suitable Minimum Burst Length ≥ 10 Pulses/Burst IR Receiver ASSP ATA2525 Applications • Home Entertainment Applications • Home Appliances • Remote Control Equipment 1. Description The IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to 5.5V. The function of ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. 4854E–AUTO–10/06 Figure 1-1. Block Diagram VS IN Input CGA and filter OUT Demodulator Microcontroller Oscillator Carrier frequency f0 AGC/ATC and digital control ATA2525 Modulated IR signal min 10 pulses GND 2 ATA2525 4854E–AUTO–10/06 ATA2525 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25°C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value –0.3 to +6 3 –0.3 to VS 0.75 –0.3 to VS 10 –25 to +85 –40 to +125 30 Unit V mA V mA V mA °C °C mW 3. Thermal Resistance Parameter Junction ambient TSSOP8 Symbol RthJA Value 110 Unit K/W 4. Electrical Characteristics Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Output voltage low Output voltage high Output current clamping Input Input DC current Input DC current; Figure 6-1 on page 5 VIN = 0; see Figure 6-7 on page 8 VIN = 0; Vs = 5V, Tamb = 25°C 5 5 IIN_DCMAX IIN_DCMAX –85 –530 –960 µA µA C B Tamb = 25°C; see Figure 6-7 on page 8 IL = 2 mA; see Figure 6-7 on page 8 Tamb = 25°C R2 = 0; see Figure 6-7 on page 8 1,3 3,6 3,1 3,6 RPU VOL VOH IOCL VS – 0.25 8 40 250 VS kΩ mV V mA A B A B IIN = 0 1 1 VS IS 4.5 0.8 5 1.1 5.5 1.4 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type* *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 3 4854E–AUTO–10/06 4. Electrical Characteristics (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. Parameters Test Conditions Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50(1) Pin Symbol Min. Typ. Max. Unit Type* 3.3 Minimum detection threshold current; Figure 6-2 on page 5 3 IEemin –600 pA B 3.4 Test signal: see Figure 6-6 on page 7 VS = 5V, Minimum detection Tamb = 25°C, threshold current with I = 1 µA, AC current disturbance IN_DC square pp, IIN_AC100 = 3 µA at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 50%(1) Test signal: see Figure 6-6 on page 7 VS = 5V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 7; BER = 5%(1) 3 IEemin –850 pA C 3.5 Maximum detection threshold current 3 IEemax –400 µA D 4 4.1 4.2 4.3 4.4 4.5 4.6 Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(2) VS = 5V, Tamb = 25°C VS = 5V, Tamb = 25°C VS = 5V, Tamb = 25°C GVARMAX GVARMIN GMAX f0_FUSE f0 –3 dB; f0 = 38 kHz; see Figure 6-4 on page 6 B –3 –6.7 51 –5 71 f0 f0 3.5 +3 +4.1 dB dB dB % % kHz D D D A C B Center frequency fusing VS = 5V, Tamb = 25°C accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2525 4854E–AUTO–10/06 ATA2525 5. Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package 6. Typical Electrical Curves at Tamb = 25°C Figure 6-1. VIN versus IIN_DC, VS = 5V 3 2.94 2.79 2.44 2 VIN (V) 1 1.14 0 0.0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 6-2. IEemin versus IIN_DC, VS = 5V 100 IEemin (nA) 10 3.6 1 1.2 0.49 0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) 5 4854E–AUTO–10/06 Figure 6-3. Data Transmission Rate, VS = 5V 1750 1418 1500 1250 1119 Lamp type 735 750 500 250 0 28 32 36 40 44 Noise type 931 693 980 730 Standard type 1493 Bits/s 1000 547 f0 (kHz) Figure 6-4. Typical Bandpass Curve 1.1 1.0 Relative Amplitude 0.9 0.8 -3 dB 0.7 0.6 0.5 ∆f 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 -3 dB f/f0 Q = f0/∆f; ∆f = –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 6 ATA2525 4854E–AUTO–10/06 ATA2525 Figure 6-5. Illustration of Used Terms 1066 µs 533 µs Burst (N = 16 pulses) Period (P = 16) IN 1 7 16 7 7 33 µs OUT t DON t DOFF Envelope 1 533 µs Envelope 16 17056 µs/data word OUT Telegram pause Data word 17 ms TREP = 6 2 ms Data word t Example: f = 30 kHz, burst with 16 pulses, 16 periods Figure 6-6. Test Circuit IEe = ∆U1/400 kΩ ∆U1 1 nF 400 k Ω V DD = 5 V IIN_DC R1 = 2 20 Ω VS IEe VPULSE 20 k Ω 1 nF ∆U2 IIN IN ATA2525 GND OUT IPIN_AC100 f0 16 20 k Ω I IN_DC = ∆U2/40 k Ω C1 = 4 .7 µF + DC + tPER = 1 0 ms 7 4854E–AUTO–10/06 Figure 6-7. Application Circuit VDD = 5 V (1) o ptional R1 = 2 20 Ω IS VS IOCL IIN IN ATA2525 OUT IL RPU = 40 kΩ R2(1) > 2 .4 k Ω IN Microcontroller GND + IIN_DC IEe C1 = 4 .7 µF VIN VO C2(1) ≤ 4 70 pF 8 ATA2525 4854E–AUTO–10/06 ATA2525 7. Chip Dimensions Figure 7-1. Chip Size in µm 990,960 GND 393,839 IN 603,828 scribe length OUT 224,495 ATA2525 47,72 VS Zapping 0,0 Versioning width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads 1.04 mm 1.11 mm 290µ ±5% 80µ × 80µ 60µ × 60µ AlCu/AlSiTi(1) 0.8 µm Si3N4/SiO2(1) 0.7/0.3 µm Pad metallurgy Material Thickness Finish Material Thickness Note: 1. Value depends on manufacture location. 9 4854E–AUTO–10/06 8. Ordering Information Delivery: unsawn wafers (DDW) in box Extended Type Number ATA2525R1xx -DDW ATA2525R3xx -DDW ATA2525R5xx(1)-DDW Notes: (1) (1) D(2) 1493 980 730 Type Standard type: high data rate Lamp type: enhanced suppression of disturbances, secure data transmission Noise type: best suppression of disturbances, low data rate 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz) 2. Maximum data transmission rate up to bits/s with f0 = 40 kHz, VS = 5V (see Figure 6-2 on page 5) 9. Pad Layout Figure 9-1. Pad Layout GND IN OUT ATA2525 VS Zapping Versioning Table 9-1. Pin Description Symbol OUT VS GND IN Zapping Versioning Function Data output Supply voltage GND Input pin diode f0 adjust type adjust 10 ATA2525 4854E–AUTO–10/06 ATA2525 10. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History • • • • • • • • Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 2 “Pin Configuration” on page 2 deleted Section 4 “Electrical Characteristics” number 3.3 on page 4 changed Section 4 “Electrical Characteristics” number 3.4 on page 4 changed Section 6 “ESD” on page 5 deleted Section 10 “Ordering Information” on page 10 changed 4854E-AUTO-10/06 4854D-AUTO-04/06 • Put datasheet in a new template • Section 10 “Ordering Information” on page 10 changed 11 4854E–AUTO–10/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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