ATA2526P738-DDW

Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) Automatic Supply Voltage Adaptation High Immunity against Disturbances from Daylight and Lamps Small Size and Innovative Pad Layout Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; adjusted by Zener-Diode Fusing ±2.5% • TTL and CMOS Compatible • • • • Applications • Home Entertainment Applications • Home Appliances • Remote Control Equipment Low-voltage IR Receiver ASSP ATA2526 1. Description The IC ATA2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of IR receiver modules. The ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ATA2525/ATA2526). The ATA2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the ATA2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. 4905D–AUTO–10/06 Figure 1-1. Block Diagram VS IN Input CGA and filter OUT Demodulator Microcontroller Oscillator Carrier frequency f0 AGC/ATC and digital control ATA2526 Modulated IR signal min 6 or 10 pulses GND 2 ATA2526 4905D–AUTO–10/06 ATA2526 2. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25°C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value –0.3 to +6 3 –0.3 to VS 0.75 –0.3 to VS 10 –25 to +85 –40 to +125 30 Unit V mA V mA V mA °C °C mW 3. Thermal Resistance Parameters Junction ambient TSSOP8 Symbol RthJA Value 110 Unit K/W 4. Electrical Characteristics, 3-V Operation Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Output voltage low Output voltage high Output current clamping Input Input DC current VIN = 0 See Figure 6-10 on page 10 5 5 IIN_DCMAX IIN_DCMAX –150 –350 µA µA C B R2 = 0 See Figure 6-10 on page 10 Tamb = 25°C See Figure 6-10 on page 10 R2 = 1.4 kΩ See Figure 6-10 on page 10 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS – 0.25 8 40 250 VS kΩ mV V mA A B B B IIN =0 1 1 VS IS 2.7 0.7 3.0 0.9 3.3 1.3 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Input DC current VIN = 0; VS = 3V See Figure 6-3 on page 7 Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 3 4905D–AUTO–10/06 4. Electrical Characteristics, 3-V Operation (Continued) Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. 3.3 Parameters Test Conditions Pin 3 Symbol IEemin Min. Typ. –800 Max. Unit pA Type* B Minimum detection Test signal: threshold current See Figure 6-9 on page 10 See Figure 6-1 on page 7 VS = 3V Tamb= 25°C, IIN_DC=1 µA Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 6-8 on page 9 3 µA at 100 Hz BER = 50(1) Test signal: See Figure 6-9 on page 10 VS = 3V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1) 3.4 3 IEemin –1600 pA C 3.5 Maximum detection threshold current with VIN > 0V 3 IEemax –200 µA D 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Controlled Amplifier and Filter Maximum value of variable gain (CGA) VS = 3V, Tamb = 25°C GVARMAX GVARMIN GMAX f03V_FUSE f03V Tamb = 0 to 70°C –3 dB; f0 = 38 kHz; See Figure 6-7 on page 9 f03V B –2.5 –5.5 –4.5 50 –6 72 f0 f0 f0 3.8 +2.5 +3.5 +3.0 dB dB dB % % % kHz D D D A C C C Minimum value of variable VS = 3V, Tamb = 25°C gain (CGA) Total internal amplification(2) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass Overall accuracy center frequency of bandpass BPF bandwidth VS = 3V, Tamb = 25°C VS = 3V, Tamb = 25°C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 4 ATA2526 4905D–AUTO–10/06 ATA2526 5. Electrical Characteristics, 5-V Operation Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 5 5.1 5.2 6 6.1 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor Tamb = 25°C See Figure 6-10 on page 10 R2 = 2.4 kΩ See Figure 6-10 on page 10 R2 = 0 See Figure 6-10 on page 10 VIN = 0 See Figure 6-10 on page 10 1, 3 RPU 40 kW A IIN =0 1 1 VS IS 4.5 0.9 5.0 1.2 5.5 1.6 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 6.2 6.3 6.4 7 7.1 Output voltage low Output voltage high Output current clamping Input Input DC current 3, 6 3, 1 3, 6 VOL VOH IOCL VS – 0.25 8 250 VS mV V mA B B B 5 IIN_DCMAX IIN_DCMAX IEemin –400 µA C 7.2 Input DC-current VIN = 0; VS = 5V See Figure 6-4 on page 8 Tamb = 25°C Min. detection threshold Test signal: current See Figure 6-9 on page See Figure 6-2 on page 7 10 VS = 5V Tamb = 25°C Min. detection threshold IIN_DC = 1 µA square pp current with AC current disturbance IIN_AC100 = burst N = 16 f = f0; tPER = 10 ms 3 µA at 100 Hz Figure 6-8 on page 9 BER = 50(1) Test signal: See Figure 6-9 on page 10 VS = 5V, Tamb = 25°C IIN_DC = 1 µA square pp burst N = 16 f = f0; tPER = 10 ms Figure 6-8 on page 9 BER = 5%(1) 5 –700 µA B 7.3 3 –1000 pA B 7.4 3 IEemin –2500 pA C 7.5 Max. detection threshold current with VIN > 0V 3 IEemax –500 µA D *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 5 4905D–AUTO–10/06 5. Electrical Characteristics, 5-V Operation (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 8 8.1 8.2 8.3 Parameters Maximum value of variable gain (CGA) Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter VS = 5V, Tamb = 25°C GVARMAX GVARMIN GMAX f05V 50 –6 72 f03V-FUSE + 0.5 dB dB dB D D D Minimum value of variable VS = 5V, Tamb = 25°C gain (CGA) Total internal amplification(2) Resulting center frequency fusing accuracy VS = 5V, Tamb = 25°C f0 fused at VS = 3V VS = 5V, Tamb = 25°C 8.4 % C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 2. After transformation of input current into voltage 5.1 Reliability Electrical qualification (1000h at 150°C) in molded SO8 plastic package 6 ATA2526 4905D–AUTO–10/06 ATA2526 6. Typical Electrical Curves at Tamb = 25°C Figure 6-1. IEemin versus IIN_DC, VS = 3V 100 VS = 3V f = f0 IEemin (nA) 10 1 0 0 1 10 100 1000 IIN_DC (µA) Figure 6-2. IEemin versus IIN_DC, VS = 5V 100 VS = 5V f = f0 IEemin (nA) 10 1 0 0 1 10 100 1000 IIN_DC (µA) Figure 6-3. VIN versus IIN_DC, VS = 3V 3.5 3.0 2.5 VS = 3V f = f0 VIN (V) 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) 7 4905D–AUTO–10/06 Figure 6-4. VIN versus IIN_DC, VS = 5V 3.5 3.0 2.5 VS = 5V f = f0 VIN (V) 2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000 IIN_DC (µA) Figure 6-5. Data Transmission Rate, VS = 3V 4000 3500 3000 2500 Short burst type 3060 Bits/s 2077 1357 Standard type 2000 2000 1500 1000 905 500 0 30 1333 Lamp type 35 40 45 50 55 60 f0 (kHz) Figure 6-6. Data Transmission Rate, VS = 5V 4000 3500 3000 2500 2317 2179 Standard type Short burst type 3415 Bits/s 2000 1479 1500 1000 952 500 0 30 1404 Lamp type 35 40 45 50 55 60 f0 (kHz) 8 ATA2526 4905D–AUTO–10/06 ATA2526 Figure 6-7. Typical Bandpass Curve 1.1 VS = 3V 1.0 Relative Amplitude 0.9 0.8 Bandwidth (-3 dB) 0.7 0.6 0.5 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f/f0/B; B → –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 Figure 6-8. Illustration of Used Terms Example: f = 33 kHz, burst with 16 pulses, 16 periods t PER = 9 70 µs t B = 4 85 µs Burst (N = 16 pulses) t GAP > t DON + t DOFF 1 7 16 7 7 Period (P = 16) IN 33 µs (f0 = 33 kHz) OUT t DON t DOFF Envelope 1 15520 µs 485 µs Envelope 16 OUT Telegram pause Data word 16 ms TREF = 6 2 ms Data word t 9 4905D–AUTO–10/06 Figure 6-9. Test Circuit IEe = ∆U1/400 kΩ ∆U1 1 nF 400 k Ω VDD = 3 V to 5V IIN_DC R1 = 2 20 Ω VS IEe VPULSE 20 k Ω 1 nF ∆U2 IIN IN ATA2526 GND OUT IIN_AC100 f0 16 20 k Ω I IN_DC = ∆U2/40 k Ω C1 4.7 µF + DC + tPER = 1 0 ms Figure 6-10. Application Circuit VDD = 3 V to 5V R1 = 2 20 Ω IS VS IOCL IN IIN GND ATA2526 OUT RPU R2(1) > 2 .4 k Ω Microcontroller + IIN_DC IEe C1 4.7 µF VIN VO C2(2) = 4 70 pF (10 nF) (1) (2) O ptional T he value of C2 i s dimensioned for the short burst type ATA2526P7xx. For the other types C2 c an be omitted. In case of an optional resistor R2 > 2 .4 k Ω t he value of C 2 must be increased to C2 = 1 0 nF. For the other types C2 = 4 70 pF is sufficient. 10 ATA2526 4905D–AUTO–10/06 ATA2526 7. Chip Dimensions Figure 7-1. Chip Size in µm 1080,960 GND 393,839 IN 666,828 scribe length OUT 225,496 ATA2526 48,73 VS Zapping 0,0 Versioning width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Dimensions Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads 1.04 mm 1.20 mm 290 µ ± 5% 80 µ × 80 µ 60 µ × 60 µ AlCu/AlSiTi(1) 0.8 µm Si3N4/SiO2 0.7/0.3 µm Pad metallurgy Material Thickness Finish Material Thickness Note: 1. Value depends on manufacture location. 11 4905D–AUTO–10/06 8. Ordering Information Delivery: unsawn wafers (DDW) in box Extended Type Number ATA2526P1xx -DDW ATA2526P3xx(1)-DDW ATA2526P7xx(1)-DDW Notes: (1) D(2) 2175 1400 3415 Type Standard type: ≥ 10 pulses, high data rate Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: ≥ 6 pulses, highest data rate 1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56kHz) 2. Maximum data transmission rate up to bits/s with f0 = 56kHz, VS = 5V (see Figure 6-6 on page 8) 8.1 Pad Layout Figure 8-1. Pad Layout GND IN OUT ATA2526 Pad layout VS Zapping Versioning Table 8-1. SYMBOL OUT VS GND IN Zapping Versioning Pin Description FUNCTION Data output Supply voltage GND Input pin diode f0 adjust type adjust 12 ATA2526 4905D–AUTO–10/06 ATA2526 9. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History • • • • • 4905D-AUTO-10/06 • • • • • 4905C-AUTO-04/06 4905B-AUTO-04/06 Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 2 “Pin Configuration” on page 2 changed Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V Operation” on pages 3 to 4 changed Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V Operation” on page 5 to 6 changed Section 6.1 “ESD” on page 6 deleted Figure 7-10 “Application Circuit” on page 10 changed Section 9 “Ordering Information” on page 12 changed Rename Figure 9-1 on page 12 • Section 9 “Ordering Information” on page 12 changed • Put datasheet in a new template • Section 8 “Chip Dimensions” on page 11 changed 13 4905D–AUTO–10/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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