Features
• Multi Channel Half-duplex Transceiver with Approximately ±2.5 MHz Programmable • • • • •
Tuning Range High FSK Sensitivity: –106 dBm at 20 Kbit/s/–109.5 dBm at 2.4 Kbit/s (433.92 MHz) High ASK Sensitivity: –112.5 dBm at 10 Kbit/s/–116.5 dBm at 2.4 Kbit/s (433.92 MHz) Low Supply Current: 10.5 mA in RX and TX Mode (3V/TX with 5 dBm) Data Rate: 1 to 20 Kbit/s Manchester FSK, 1 to 10 Kbit/s Manchester ASK ASK/FSK Receiver Uses a Low-IF Architecture with High Selectivity, Blocking, and Low Intermodulation (Typical Blocking 55 dB at ±750 kHz/61 dB at ±1.5 MHz and 70 dB at ±10 MHz, System I1dBCP = –30 dBm/System IIP3 = –20 dBm) 226 kHz/237 kHz IF Frequency with 30 dB Image Rejection and 170 kHz Usable IF Bandwidth Transmitter Uses Closed Loop Fractional-N Synthesizer for FSK Modulation with a High PLL Bandwidth and an Excellent Isolation between PLL/VCO and PA Tolerances of XTAL Compensated by Fractional-N Synthesizer with 800 Hz RF Resolution Integrated RX/TX-Switch, Single-ended RF Input and Output RSSI (Received Signal Strength Indicator) Communication to Microcontroller with SPI Interface Working at Maximum 500 kBit/s Configurable Self Polling and RX/TX Protocol Handling with FIFO-RAM Buffering of Received and Transmitted Data 5 Push Button Inputs and One Wake-up Input are Active in Power-down Mode Integrated XTAL Capacitors PA Efficiency: up to 38% (433.92 MHz/10 dBm/3V) Low In-band Sensitivity Change of Typically ±1.8 dB within ±58 kHz Center Frequency Change in the Complete Temperature and Supply Voltage Range Supply Voltage Switch, Supply Voltage Regulator, Reset Generation, Clock/Interrupt Generation and Low Battery Indicator for Microcontroller Fully Integrated PLL with Low Phase Noise VCO, PLL Loop Filter and Full Support of Multi-channel Operation with Arbitrary Channel Distance Due to Fractional-N Synthesizer Sophisticated Threshold Control and Quasi-peak Detector Circuit in the Data Slicer Power Management via Different Operation Modes 315 MHz, 345 MHz, 433.92 MHz, 868.3 MHz and 915 MHz without External VCO and PLL Components Inductive Supply with Voltage Regulator if Battery is Empty (AUX Mode) Efficient XTO Start-up Circuit (> –1.5 kΩ Worst Case Real Start-up Impedance) Changing of Modulation Type ASK/FSK and Data Rate without Component Changes Minimal External Circuitry Requirements for Complete System Solution Adjustable Output Power: 0 to 10 dBm Adjusted and Stabilized with External Resistor ESD Protection at all Pins (1.5 kV HBM, 200V MM, 1 kV FCDM) Supply Voltage Range: 2.4V to 3.6V or 4.4V to 6.6V Temperature Range: –40°C to +85°C Small 7 × 7 mm QFN48 Package
• • • • • • • • • • • • •
UHF ASK/FSK Transceiver ATA5423 ATA5425 ATA5428 ATA5429
• • • • • • • • • • • •
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Applications
• • • • • •
Consumer Industrial Segment Access Control Systems Remote Control Systems Alarm and Telemetry Systems Energy Metering Home Automation
Benefits
• Low System Cost Due to Very High System Integration Level • Only One Crystal Needed in System • Less Demanding Specification for the Microcontroller Due to Handling of Power-down Mode,
Delivering of Clock, Reset, Low Battery Indication and Complete Handling of Receive/Transmit Protocol and Polling • Single-ended Design with High Isolation of PLL/VCO from PA and the Power Supply Allows a Loop Antenna in the Remote Control Unit to Surround the Whole Application
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1. General Description
The ATA5423/25/28/29 is a highly integrated UHF ASK/FSK multi-channel half-duplex transceiver with low power consumption supplied in a small 7 x 7 mm QFN48 package. The receive part is built as a fully integrated low-IF receiver, whereas direct PLL modulation with the fractional-N synthesizer is used for FSK transmission and switching of the power amplifier for ASK transmission. The device supports data rates of 1 Kbit/s to 20 Kbit/s (FSK) and 1 Kbit/s to 10 Kbit/s (ASK) in Manchester, Bi-phase and other codes in transparent mode. The ATA5428 can be used in the 431.5 MHz to 436.5 MHz and in the 862 MHz to 872 MHz bands, the ATA5423 in the 312.5 MHz to 317.5 MHz band, the ATA5425 in the 342.5 MHz to 347.5 MHz band and the ATA5429 in the 912.5 MHz to 917.5 MHz band. The very high system integration level results in a small number of external components needed. Due to its blocking and selectivity performance, together with the additional 15 dB to 20 dB loss and the narrow bandwidth of a typical loop antenna in a remote control unit, a bulky blocking SAW is not needed in the remote control unit. Additionally, the building blocks needed for a typical remote control and access control system on both sides (the base and the mobile stations) are fully integrated. Its digital control logic with self-polling and protocol generation enables a fast challengeresponse system without using a high-performance microcontroller. Therefore, the ATA5423/ATA5425/ATA5428/ATA5429 contains a FIFO buffer RAM and can compose and receive the physical messages themselves. This provides more time for the microcontroller to carry out other functions such as calculating crypto algorithms, composing the logical messages, and controlling other devices. Therefore, a standard 4-/8-bit microcontroller without special periphery and clocked with the CLK output of about 4.5 MHz is sufficient to control the communication link. This is especially valid for passive entry and access control systems, where within less than 100 ms several challenge-response communications with arbitration of the communication partner have to be handled. It is hence possible to design bi-directional remote control and access control systems with a fast challenge-response crypto function, with the same PCB board size and with the same current consumption as uni-directional remote control systems.
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Figure 1-1.
System Block Diagram
ATA5423/ATA5425/ATA5428/ATA5429 RF Transceiver Antenna Digital Control Logic Power Supply
ATmega 44/88/168 Matching/ RF Switch Microcontroller interface 4 to 8
XTO
Figure 1-2.
Pinning QFN48
RX_ACTIVE T1 PWR_ON RX_TX1 RX_TX2
NC
48 47 46 45 44 43 42 41 40 39 38 37
NC NC NC RF_IN NC 433_N868 NC R_PWR PWR_H RF_OUT NC NC
CDEM
36 35 34 33 32
NC
T2
T3 T4
T5
1 2 3 4 5 6 7 8 9 10 11
RSSI CS DEM_OUT SCK SDI_TMDI SDO_TMDO CLK IRQ N_RESET VSINT NC XTAL2
ATA5423/ATA5425 ATA5428/ATA5429
31 30 29 28 27 26
12 25 13 14 15 16 17 18 19 20 21 22 23 24
TEST1
DVCC VSOUT
TEST2
NC
NC
NC AVCC
VS1 VAUX
4
ATA5423/ATA5425/ATA5428/ATA5429
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TXAL1
VS2
ATA5423/ATA5425/ATA5428/ATA5429
Table 1-1.
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41
Pin Description
Symbol NC NC NC RF_IN NC 433_N868 NC R_PWR PWR_H RF_OUT NC NC NC NC NC AVCC VS2 VS1 VAUX TEST1 DVCC VSOUT TEST2 XTAL1 XTAL2 NC VSINT N_RESET IRQ CLK SDO_TMDO SDI_TMDI SCK DEM_OUT CS RSSI CDEM RX_TX2 RX_TX1 PWR_ON T5 Function Not connected Not connected Not connected RF input Not connected Selects RF input/output frequency range Not connected Resistor to adjust output power Pin to select output power RF output Not connected Not connected Not connected Not connected Not connected Blocking of the analog voltage supply Power supply input for voltage range 4.4V to 6.6V Power supply input for voltage range 2.4V to 3.6V Auxiliary supply voltage input Test input, at GND during operation Blocking of the digital voltage supply Output voltage power supply for external devices Test input, at GND during operation Reference crystal Reference crystal Not connected Microcontroller interface supply voltage Output pin to reset a connected microcontroller Interrupt request Clock output to connect a microcontroller Serial data out/transparent mode data out Serial data in/transparent mode data in Serial clock Demodulator open drain output signal Chip select for serial interface Output of the RSSI amplifier Capacitor to adjust the lower cut-off frequency data filter GND pin to decouple LNA in TX mode Switch pin to decouple LNA in TX mode Input to switch on the system (active high) Key input 5 (can also be used to switch on the system (active low))
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Table 1-1.
Pin 42 43 44 45 46 47 48
Pin Description (Continued)
Symbol T4 T3 T2 T1 RX_ACTIVE NC NC GND Function Key input 4 (can also be used to switch on the system (active low)) Key input 3 (can also be used to switch on the system (active low)) Key input 2 (can also be used to switch on the system (active low)) Key input 1 (can also be used to switch on the system (active low)) Indicates RX operation mode Not connected Not connected Ground/backplane
Figure 1-3.
Block Diagram
AVCC RX_ACTIVE DVCC
433_N868 R_PWR RF_OUT PWR_H RX_TX1 RX_TX2
RX/TX switch PA
RF transceiver Frontend Enable PA_Enable (ASK) TX_DATA (FSK) RX/TX Fractional-N frequency synthesizer Signal Processing (Mixer IF-filter IF-amplifier FSK/ASK Demodulator, Data filter Data Slicer) FREQ FREF 13
Digital Control Logic
Power Supply
VS2 VS1 VAUX VSOUT
Switches Regulators Wake-up Reset TX/RX - Data buffer Control register Status register Polling circuit Bit-check logic
PWR_ON T1 T2 T3 T4 T5
Demod_Out
RF_IN
LNA
CDEM RSSI XTAL1 XTAL2 DEM_OUT CLK N_RESET IRQ CS SCK SDI_TMDI SDO_TMDO
Microcontroller interface
Reset XTO
TEST1 TEST2
SPI
VSINT
GND
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2. Application Circuits
2.1 Typical Remote Control Unit Application with 1 Li Battery (3V)
Figure 2-1 shows a typical 433.92 MHz Remote Control Unit application with one battery. The external components are 11 capacitors, 1 resistor, 2 inductors and a crystal. C1 to C4 are 68 nF voltage supply blocking capacitors. C5 is a 10 nF supply blocking capacitor. C6 is a 15 nF fixed capacitor used for the internal quasi-peak detector and for the high-pass frequency of the data filter. C7 to C11 are RF matching capacitors in the range of 1 pF to 33 pF. L1 is a matching inductor of about 5.6 nH to 56 nH. L2 is a feed inductor of about 120 nH. A load capacitor of 9 pF for the crystal is integrated. R1 is typically 22 kΩ and sets the output power to about 5.5 dBm. The loop antenna’s quality factor is somewhat reduced by this application due to the quality factor of L2 and the RX/TX switch. On the other hand, this lower quality factor is necessary to have a robust design with a bandwidth that is broad enough for production tolerances. Due to the single-ended and ground-referenced design, the loop antenna can be a free-form wire around the application as it is usually employed in remote control uni-directional systems. The ATA5423/ATA5425/ATA5428/ATA5429 provides sufficient isolation and robust pulling behavior of internal circuits from the supply voltage as well as an integrated VCO inductor to allow this. Since the efficiency of a loop antenna is proportional to the square of the surrounded area it is beneficial to have a large loop around the application board with a lower quality factor in order to relax the tolerance specification of the RF components and to get a high antenna efficiency in spite of their lower quality factor. Figure 2-1. Typical Remote Control Unit Application, 433.92 MHz, 1 Li Battery (3V)
L1 C11 20 mm x 0.4 mm C7 C6
Sensor
RX_ACTIVE
T5 PWR_ON
NC
NC
T1
T2
T3
T4
RX_TX1
RX_TX2
NC NC NC RF_IN
CDEM RSSI CS
DEM_OUT SCK SDI_TMDI
AVCC
C5 R1
NC 433_N868 NC R_PWR PWR_H RF_OUT
ATA5423/ATA5425 SDO_TMDO CLK ATA5428/ATA5429
IRQ N_RESET VSINT VSOUT TEST1 TEST2 NC TXAL1 XTAL2 DVCC AVCC VAUX
ATmega 48/88/168
L2
VCC
VSS
C8 C10 C9 Loop antenna
NC VS2 VS1 NC NC NC NC
C1 C4 C2 + Lithium cell C3 13.25311 MHz
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2.2
Typical Base-station Application (5V)
Figure 2.2 shows a typical 433.92 MHz VCC = 4.75V to 5.25V Base-station Application (5V). The external components are 12 capacitors, 1 resistor, 4 inductors, a SAW filter, and a crystal. C1 and C3 to C4 are 68 nF voltage supply blocking capacitors. C2 and C12 are 2.2 µF supply blocking capacitors for the internal voltage regulators. C5 is a 10 nF supply blocking capacitor. C6 is a 15 nF fixed capacitor used for the internal quasi-peak detector and for the high-pass frequency of the data filter. C7 to C11 are RF matching capacitors in the range of 1 pF to 33 pF. L2 to L4 are matching inductors of about 5.6 nH to 56 nH. A load capacitor for the crystal of 9 pF is integrated. R1 is typically 22 kΩ and sets the output power at RF_OUT to about 10 dBm. Since a quarter wave or PCB antenna, which has high efficiency and wide band operation, is typically used here, it is recommended to use a SAW filter to achieve high sensitivity in case of powerful out-of-band blockers. L1, C9 and C10 together form a low-pass filter, which is needed to filter out the harmonics in the transmitted signal to meet regulations. An internally regulated voltage at pin VSOUT can be used in case the microcontroller only supports 3.3V operation, a blocking capacitor with a value of C12 = 2.2 µF has to be connected to VSOUT in any case.
Figure 2-2.
Typical Base-station Application (5V), 433.92 MHz
L4 C11 L3 20 mm x 0.4 mm C7 C6
SAW-Filter
Sensor
NC
NC
RX_ACTIVE
T5 PWR_ON
T1
T2
T3
T4
RX_TX1
RX_TX2
NC NC NC RF_IN
CDEM RSSI CS
DEM_OUT SCK SDI_TMDI
AVCC
C5 R1
NC 433_N868 NC R_PWR PWR_H
ATA5423/ATA5425 SDO_TMDO CLK ATA5428/ATA5429
IRQ N_RESET VSINT VSOUT TEST1 TEST2 TXAL1 NC XTAL2 DVCC AVCC VAUX
ATmega 48/88/168
L2 50Ω connector RFOUT
RF_OUT
VCC
VSS
L1 C10
C8 C9
VS2
VS1
NC NC NC NC NC
C12 C1 C2 C4
13.25311 MHz
VCC = 4.75V to 5.25V
C3
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2.3 Typical Remote Control Unit Application, 2 Li Batteries (6V)
Figure 2-3 shows a typical 433.92 MHz 2 Li battery Remote Control Unit application. The external components are 11 capacitors, 1 resistor, 2 inductors and a crystal. C1 and C4 are 68 nF voltage supply blocking capacitors. C2 and C3 are 2.2 µF supply blocking capacitors for the internal voltage regulators. C5 is a 10 nF supply blocking capacitor. C6 is a 15 nF fixed capacitor used for the internal quasi-peak detector and for the high-pass frequency of the data filter. C7 to C11 are RF matching capacitors in the range of 1 pF to 33 pF. L1 is a matching inductor of about 5.6 nH to 56 nH. L2 is a feed inductor of about 120 nH. A load capacitor for the crystal of 9 pF is integrated. R1 is typically 22 kΩ and sets the output power to about 5.5 dBm. Figure 2-3. Typical Remote Control Unit Application, 433.92 MHz, 2 Li Batteries (6V)
L1 C11 20 mm x 0.4 mm C7 C6
Sensor
T5 PWR_ON
NC
NC
T1
T2
T3
T4
RX_TX1
RX_ACTIVE
RX_TX2
NC NC NC RF_IN
CDEM RSSI CS
DEM_OUT SCK SDI_TMDI
AVCC
C5 R1
NC 433_N868 NC R_PWR PWR_H RF_OUT
ATA5423/ATA5425 SDO_TMDO CLK ATA5428/ATA5429
IRQ N_RESET VSINT VSOUT TEST1 TEST2 NC TXAL1 XTAL2 DVCC AVCC VAUX
ATmega 48/88/168
L2
VCC
VSS
C8 C10 C9 Loop antenna
NC VS2 VS1 NC NC NC NC
C1
C2 C4 13.25311 MHz C3
+ Lithium cell + Lithium cell
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3. RF Transceiver
As seen in Figure 1-3 on page 6, the RF transceiver consists of an LNA (Low-noise Amplifier), PA (Power Amplifier), RX/TX switch, fractional-N frequency synthesizer and the signal processing part with mixer, IF filter, IF amplifier with analog RSSI, FSK/ASK demodulator, data filter, and data slicer. In receive mode the LNA pre-amplifies the received signal which is converted down to 226 kHz (ATA5423/ATA5428) and 235 kHz (ATA5425/ATA5429), filtered and amplified before it is fed into an FSK/ASK demodulator, data filter, and data slicer. The RSSI (Received Signal Strength Indicator) signal and the raw digital output signal of the demodulator are available at the pins RSSI and DEM_OUT. The demodulated data signal Demod_Out is fed to the digital control logic where it is evaluated and buffered as described in the section “Digital Control Logic” . In transmit mode, the fractional-N frequency synthesizer generates the TX frequency which is fed to the PA. In ASK mode the PA is modulated by the signal PA_Enable. In FSK mode the PA is enabled and the signal TX_DATA (FSK) modulates the fractional-N frequency synthesizer. The frequency deviation is digitally controlled and internally fixed to about ±16 kHz (see Table 4-1 on page 28 for exact values). The transmit data can also be buffered as described in the section “Digital Control Logic” . A lock detector within the synthesizer ensures that the transmission will start only if the synthesizer is locked. The RX/TX switch can be used to combine the LNA input and the PA output to a single antenna with a minimum of losses. Transparent modes without buffering of RX and TX data are also available to allow protocols and coding schemes other than the internally supported Manchester encoding.
3.1
Low-IF Receiver
The receive path consists of a fully integrated low-IF receiver. It fulfills the sensitivity, blocking, selectivity, supply voltage and supply current specification needed to manufacture, for example, an automotive remote control unit without the use of SAW blocking filter (see Figure 2-1 on page 7). In a Base-station Application (5V) the receiver can be used with an additional blocking SAW front-end filter as shown in Figure 2.2 on page 8. At 433.92 MHz the receiver has a typical system noise figure of 7.0 dB, a system I1dBCP of -30 dBm and a system IIP3 of –20 dBm. There is no AGC or switching of the LNA needed; thus, a better blocking performance is achieved. This receiver uses an IF (Intermediate Frequency) of 226 kHz, the typical image rejection is 30 dB and the typical 3 dB IF filter bandwidth is 185 kHz (fIF = 226 kHz ±92.5 kHz, flo_IF = 133.5 kHz and fhi_IF = 318.5 kHz). The demodulator needs a signal to Gaussian noise ratio of 8 dB for 20 Kbit/s Manchester with ±16 kHz frequency deviation in FSK mode; thus, the resulting sensitivity at 433.92 MHz is typically –106 dBm at 20 Kbit/s Manchester. Due to the low phase noise and spurious emissions of the synthesizer in receive mode (1) together with the eighth order integrated IF filter, the receiver has a better selectivity and blocking performance than more complex double superhet receivers but without external components and without numerous spurious receiving frequencies.
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A low-IF architecture is also less sensitive to second-order intermodulation (IIP2) than direct conversion receivers, where every pulse or AM-modulated signal (especially the signals from TDMA systems like GSM) demodulates to the receiving signal band at second-order non-linearities.
Note:
–120 dBC/Hz at ±1 MHz and –75 dBC at ±FREF at 433.92 MHz
3.2
Input Matching at RF_IN
The measured input impedances as well as the values of a parallel equivalent circuit of these impedances can be seen in Table 3-1. The highest sensitivity is achieved with power matching of these impedances to the source impedance of 50Ω
Table 3-1.
Measured Input Impedances of the RF_IN Pin
fRF/MHz 315 345 433.92 868.3 915 Z(RF_IN) (44-j233)Ω (40-j211)Ω (32-j169)Ω (21-j78)Ω (18-j70)Ω Rp//Cp 1278Ω//2.1 pF 1153Ω//2.1 pF 925Ω//2.1 pF 311Ω//2.2 pF 290Ω//2.3 pF
The matching of the LNA Input to 50Ω was done with the circuit shown in Figure 3-1 and with the values given in Table 3-2 on page 12. The reflection coefficients were always ≤10 dB. Note that value changes of C1 and L1 may be necessary to compensate for individual board layouts. The measured typical FSK and ASK Manchester code sensitivities with a Bit Error Rate (BER) of 10-3 are shown in Table 3-3 and Table 3-4 on page 12. These measurements were done with inductors having a quality factor according to Table 3-2, resulting in estimated matching losses of 0.8 dB at 315 MHz, 0.8 dB at 345 MHz, 0.7 dB at 433.92 MHz, 0.7 dB at 868.3 MHz and 0.7 at 915 MHz. These losses can be estimated when calculating the parallel equivalent resistance of the inductor with Rloss = 2 × π × f × L × QL and the matching loss with 10 log(1 + Rp/Rloss). With an ideal inductor, for example, the sensitivity at 433.92 MHz/FSK/20 Kbit/s/ ±16 kHz/Manchester can be improved from –106 dBm to –106.7 dBm. The sensitivity depends on the control logic which examines the incoming data stream. The examination limits must be programmed in control registers 5 and 6. The measurements in Table 3-3 and Table 3-4 on page 12 are based on the values of registers 5 and 6 according to Table 9-3 on page 61. Figure 3-1. Input Matching to 50Ω
C1 ATA5423/ATA5425 ATA5428/ATA5429 RF_IN L1
4
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Table 3-2.
315 345
Input Matching to 50Ω
C1/pF 2.4 1.8 1.8 1.2 1.3 L1/nH 47 43 27 6.8 5.6 QL1 66 67 70 50 52
fRF/MHz
433.92 868.3 915
Table 3-3.
RF Frequency 315 MHz 345 MHz 433.92 MHz 868.3 MHz 915 MHz
Measured Sensitivity FSK, ±16 kHz, Manchester, dBm, BER = 10–3
BR_Range_0 1.0 Kbit/s BR_Range_0 2.4 Kbit/s BR_Range_1 5.0 Kbit/s BR_Range_2 10 Kbit/s BR_Range_3 20 Kbit/s
–110.0 dBm
–109.5 dBm –109.0 dBm –106.0 dBm –105.5 dBm
–110.5 dBm
–110.5 dBm –109.5 dBm –106.5 dBm –106.0 dBm
–109.0 dBm
–109.0 dBm –108.0 dBm –105.5 dBm –105.0 dBm
–108.0 dBm
–107.5 dBm –107.0 dBm –104.0 dBm –103.5 dBm
–107.0 dBm
–107.0 dBm –106.0 dBm –103.5 dBm –103.0 dBm
Table 3-4.
Measured Sensitivity 100% ASK, Manchester, dBm, BER = 10–3
BR_Range_0 1.0 Kbit/s BR_Range_0 2.4 Kbit/s BR_Range_1 5.0 Kbit/s BR_Range_2 10 Kbit/s
RF Frequency 315 MHz 345 MHz 433.92 MHz 868.3 MHz 915 MHz
–117.0 dBm –117.0 dBm –116.0 dBm –112.5 dBm –112.5 dBm
–117.5 dBm –117.5 dBm –116.5 dBm –113.0 dBm –113.0 dBm
–115.0 dBm –115.0 dBm –114.0 dBm –111.5 dBm –111.0 dBm
–113.5 dBm –113.0 dBm –112.5 dBm –109.5 dBm –109.0 dBm
3.3
Sensitivity versus Supply Voltage, Temperature and Frequency Offset
To calculate the behavior of a transmission system it is important to know the reduction of the sensitivity due to several influences. The most important are frequency offset due to crystal oscillator (XTO) and crystal frequency (XTAL) errors, temperature and supply voltage dependency of the noise figure and IF filter bandwidth of the receiver. Figure 3-2 shows the typical sensitivity at 433.92 MHz/FSK/20 Kbit/s/ ±16 kHz/Manchester versus the frequency offset between transmitter and receiver with Tamb = –40°C, +25°C and +105°C and supply voltage VS1 = VS2 = 2.4V, 3.0V and 3.6V.
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Figure 3-2.
-110 -109 -108
-107
Measured Sensitivity 433.92 MHz/FSK/20 Kbit/s/±16 kHz/Manchester versus Frequency Offset, Temperature and Supply Voltage
-106 -105 -104 -103 -102 -101 -100 -99 -98 -97 -96 -95 -100
Sensitivity (dBm)
VS = 2.4V Tamb = -40°C VS = 3.0V Tamb = -40°C VS = 2.4V Tamb = +25°C VS = 3.0V Tamb = +25°C VS = 3.6V Tamb = -40°C
VS = 3.0V Tamb = +105°C VS = 3.6V Tamb = +105°C
VS = 3.6V Tamb = +25°C VS = 2.4V Tamb = +105°C
-80
-60
-40
-20 0 20 40 Frequency Offset (kHz)
60
80
100
As can be seen in Figure 3-2 on page 13 the supply voltage has almost no influence. The temperature has an influence of about +1.5/–0.7 dB, and a frequency offset of ±65 kHz also influences by about ±1 dB. All these influences, combined with the sensitivity of a typical IC, are then within a range of –103.7 dBm and –107.3 dBm over temperature, supply voltage and frequency offset which is –105.5 dBm ±1.8dB. The integrated IF filter has an additional production tolerance of only ±7 kHz, hence, a frequency offset between the receiver and the transmitter of ±58 kHz can be accepted for XTAL and XTO tolerances.
Note: For the demodulator used in the ATA5423/ATA5425, the tolerable frequency offset does not change with the data frequency, hence, the value of ±58 kHz is valid for up to 1 Kbit/s.
This small sensitivity spread over supply voltage, frequency offset and temperature is very unusual in such a receiver. It is achieved by an internal, very fast and automatic frequency correction in the FSK demodulator after the IF filter, which leads to a higher system margin. This frequency correction tracks the input frequency very quickly; if, however, the input frequency makes a larger step (for example, if the system changes between different communication partners), the receiver has to be restarted. This can be done by switching back to IDLE mode and then again to RX mode. For that purpose, an automatic mode is also available. This automatic mode switches to IDLE mode and back into RX mode every time a bit error occurs. (See “Digital Control Logic” on page 36.)
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3.4
Frequency Accuracy of the Crystals
The XTO is an amplitude regulated Pierce oscillator with integrated load capacitors. The initial tolerances (due to the frequency tolerance of the XTAL, the integrated capacitors on XTAL1, XTAL2 and the XTO’s initial transconductance gm) can be compensated to a value within ±0.5 ppm by measuring the CLK output frequency and programming the control registers 2 and 3 (see Table 7-7 on page 39 and Table 7-10 on page 40). The XTO then has a remaining influence of less than ±2 ppm over temperature and supply voltage due to the band gap controlled gm of the XTO. The needed frequency stability of the used crystals over temperature and aging is hence ±58 kHz/315 MHz – 2 × ±2.5 ppm = ±179.2 ppm for 315 MHz, ±58 kHz/345 MHz – 2 × ±2.5 ppm = ±163.2 ppm for 345 MHz, ±58 kHz/433.92 MHz – 2 × ±2.5 ppm = ±128.6 ppm for 433.92 MHz, ±58 kHz/868.3 MHz – 2 × ±2.5 ppm = ±61.8 ppm for 868.3 MHz and ±58 kHz/915 MHz – 2 × ±2.5 ppm = ±58.4 ppm for 915 MHz. Thus, the used crystals in receiver and transmitter each need to be better than ±89.6 ppm for 315 MHz, ±81.6 ppm for 345 MHz, ±64.3 ppm for 433.92 MHz, ±30.9 ppm for 868.3 MHz and ±29.2 ppm for 915 MHz. In access control systems it may be advantageous to have a more tight tolerance at the Base-station in order to relax the requirement for the remote control unit.
3.5
RX Supply Current versus Temperature and Supply Voltage
Table 3-5 shows the typical supply current at 433.92 MHz of the transceiver in RX mode versus supply voltage and temperature with VS = VS1 = VS2. As can be seen, the supply current at 2.4 V and –40°C is less than the typical supply current; this is useful because this is also the operation point where a lithium cell has the worst performance. The typical supply current at 315 MHz, 345 MHz, 868.3 MHz or 915 MHz in RX mode is about the same as for 433.92 MHz.
Table 3-5.
Measured 433.92 MHz Receive Supply Current in FSK Mode
2.4V 8.4 mA 9.9 mA 10.9 mA 3.0V 8.8 mA 10.3 mA 11.3 mA 3.6V 9.2 mA 10.8 mA 11.8 mA
VS = VS1 = VS2
Tamb = –40°C Tamb = 25°C Tamb = 85°C
3.6
Blocking, Selectivity
As can be seen in Figure 3-3 and Figure 3-4 on page 15, the receiver can receive signals 3 dB higher than the sensitivity level in the presence of very large blockers of –47 dBm/–34 dBm with small frequency offsets of ±1/ ±10 MHz. Figure 3-3 shows narrow band blocking and Figure 3-4 wide band blocking characteristics. The measurements were done with a signal of 433.92 MHz/FSK/20 Kbit/s/±16 kHz/ Manchester, and with a level of –106 dBm + 3 dB = –103 dBm which is 3 dB above the sensitivity level. The figures show how much larger than –103dBm a continuous wave signal can be before the BER is higher than 10–3. The measurements were done at the 50Ω input according to Figure 3-1 on page 11. At 1 MHz, for example, the blocker can be 56 dB higher than –103 dBm which is -103 dBm + 56 dB = –47 dBm. These values, together with the good intermodulation performance, avoid the need for a SAW filter in the remote control unit application.
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Figure 3-3. Narrow Band 3 dB Blocking Characteristic at 433.92 MHz
70 60
Blocking Level (dBC)
50 40 30 20 10 0 -10 -5 -4 -3 -2 -1 0 1 2 3 4 5
Distance of Interfering to Receiving Signal (MHz)
Figure 3-4.
Wide Band 3 dB Blocking Characteristic at 433.92 MHz
80 70
Blocking Level (dBC)
60 50 40 30 20 10 0 -10 -50 -40 -30 -20 -10 0 10 20 30 40 50
Distance of Interfering to Receiving Signal (MHz)
Figure 3-5 on page 16 shows the blocking measurement close to the received frequency to illustrate the selectivity and image rejection. This measurement was done 6 dB above the sensitivity level with a useful signal of 433.92 MHz/FSK/20 Kbit/s/±16 kHz/ Manchester with a level of –106 dBm + 6 dB = –100 dBm. The figure shows to which extent a continuous wave signal can surpass –100 dBm until the BER is higher than 10-3. For example, at 1 MHz the blocker can then be 59 dB higher than –100 dBm which is –100 dBm + 59 dB = –41 dBm. Table 3-6 on page 16 shows the blocking performance measured relative to –100 dBm for some other frequencies. Note that sometimes the blocking is measured relative to the sensitivity level (dBS) instead of the carrier (dBC).
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Table 3-6.
Blocking 6 dB Above Sensitivity Level with BER < 10–3
Blocker Level Blocking 55 dBC/61 dBS 55 dBC/61 dBS 62 dBC/68 dBS 62 dBC/68 dBS 70 dBC/76 dBS 70 dBC/76 dBS +0.75 MHz
Frequency Offset
–45 dBm –45 dBm –38 dBm –38 dBm –30 dBm –30 dBm
–0.75 MHz
+1.5 MHz
–1.5 MHz
+10 MHz
–10 MHz
The ATA5423/ATA5425/ATA5428/ATA5429 can also receive FSK and ASK modulated signals if they are much higher than the I1dBCP. It can typically receive useful signals at 10 dBm. This is often referred to as the nonlinear dynamic range which is the maximum to minimum receiving signal and is 116 dB for 20 Kbit/s Manchester. This value is useful if two transceivers have to communicate and are very close to each other. Figure 3-5. Close In 6 dB Blocking Characteristic and Image Response at 433.92 MHz
70 60
Blocking Level (dBC)
50 40 30 20 10 0 -10 -1.0
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1.0
Distance of Interfering to Receiving Signal (MHz)
This high blocking performance even makes it possible for some applications using quarter wave whip antennas to use a simple LC band-pass filter instead of a SAW filter in the receiver. When designing such an LC filter take into account that the 3 dB blocking at 433.92 MHz/2 = 216.96 MHz is 43 dBC and at 433.92 MHz/3 = 144.64 MHz is 48 dBC and at 2 × (433.92 MHz + 226 kHz) + –226 kHz = 868.066 MHz/868.518 MHz is 56 dBC. And especially that at 3 × (433.92 MHz + 226 kHz) + 226 kHz = 1302.664 MHz the receiver has its second LO harmonic receiving frequency with only 12 dBC blocking.
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3.7 In-band Disturbers, Data Filter, Quasi-peak Detector, Data Slicer
If a disturbing signal falls into the received band or a blocker is not continuous wave, the performance of a receiver strongly depends on the circuits after the IF filter. The demodulator, data filter and data slicer are important, in that case. The data filter of the ATA5423/ATA5425/ATA5428/ATA5429 implies a quasi-peak detector. This results in a good suppression of the above mentioned disturbers and exhibits a good carrier to Gaussian noise performance. The required useful signal to disturbing signal ratio to be received with a BER of 10 –3 i s less than 12 dB in ASK mode and less than 3 dB (BR_Range_0 to BR_Range_2)/6 dB (BR_Range_3) in FSK mode. Due to the many different waveforms possible these numbers are measured for signal as well as for disturbers with peak amplitude values. Note that these values are worst case values and are valid for any type of modulation and modulating frequency of the disturbing signal as well as the receiving signal. For many combinations, lower carrier to disturbing signal ratios are needed.
3.8
DEM_OUT Output
The internal raw output signal of the demodulator Demod_Out is available at pin DEM_OUT. DEM_OUT is an open drain output and must be connected to a pull-up resistor if it is used (typically 100 kΩ) otherwise no signal is present at that pin.
3.9
RSSI Output
The output voltage of the pin RSSI is an analog voltage, proportional to the input power level. Using the RSSI output signal, the signal strength of different transmitters can be distinguished. The usable dynamic range of the RSSI amplifier is 70 dB, the input power range P(RFIN) is –115 dBm to –45 dBm and the gain is 8 mV/dB. Figure 3-6 shows the RSSI characteristic of a typical device at 433.92 MHz with VS1 = VS2 = 2.4 to 3.6 V and Tamb = –40°C to +85°C with a matched input according to Table 3-2 on page 12 and Figure 3-1 on page 11. At 915 MHz about 3.3 dB and at 868.3 MHz about 2.7 dB more signal level, at 345 MHz about 0.8 dB and at 315 MHz about 1 dB less signal level is needed for the same RSSI results. Figure 3-6. Typical RSSI Characteristic versus Temperature and Supply Voltage
1100 1000
VRSSI (mV)
900 800
max.
700 min. 600 500 400 -120
typ.
-110
-100
-90
-80
-70
-60
-50
-40
PRF_IN (dBm)
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3.10
Frequency Synthesizer
The synthesizer is a fully integrated fractional-N design with internal loop filters for receive and transmit mode. The XTO frequency fXTO is the reference frequency FREF for the synthesizer. The bits FR0 to FR12 in control registers 2 and 3 (see Table 7-7 on page 39 and Table 7-10 on page 40) are used to adjust the deviation of fXTO. In transmit mode, at 433.92 MHz, the carrier has a phase noise of –111 dBC/Hz at 1 MHz and spurious emissions at FREF of –66 dBC with a high PLL loop bandwidth allowing the direct modulation of the carrier with 20 Kbit/s Manchester data. Due to the closed loop modulation any spurious emissions caused by this modulation are effectively filtered out as can be seen in Figure 3-9 on page 20. In RX mode the synthesizer has a phase noise of –120 dBC/Hz at 1 MHz and spurious emissions of –75 dBC. The initial tolerances of the crystal oscillator due to crystal tolerances, internal capacitor tolerances and the parasitics of the board have to be compensated at manufacturing setup with control registers 2 and 3 as can be seen in Table 4-1 on page 28. The other control words for the synthesizer needed for ASK, FSK and receive/transmit switching are calculated internally. The RF (Radio Frequency) resolution is equal to the XTO frequency divided by 16384 which is 777.1 Hz at 315.0 MHz, 851.1 Hz at 345.0 MHz, 808.9 Hz at 433.92 MHz, 818.6 Hz at 868.3 MHz and 862.6 Hz at 915.0 MHz. For the multi-channel system the frequency control word FREQ in control registers 2 and 3 can be programmed in the range of 1000 to 6900, this is equivalent to a programmable tuning range of ±2.5 MHz hence every frequency within the 315 MHz, 345 MHz, 433 MHz, 868 MHz and 915 MHz ISM bands can be programmed as receive and as transmit frequency, and the position of channels within these ISM bands can be chosen arbitrarily (see Table 4-1). Care must be taken as to the harmonics of the CLK output signal as well as to the harmonics produced by a microprocessor clocked with it, since these harmonics can disturb the reception of signals. In a single-channel system, using FREQ = 3803 to 4053 ensures that harmonics of this signal do not disturb the receive mode.
3.11
FSK/ASK Transmission
Due to the fast modulation capability of the synthesizer and the high resolution, the carrier can be internally FSK modulated, which simplifies the application of the transceiver. The deviation of the transmitted signal is ±20 digital frequency steps of the synthesizer which is equal to ±15.54 kHz for 315 MHz, ±17.02 kHz for 345 MHz, ±16.17 kHz for 433.92 MHz, ±16.37 kHz for 868.3 MHz and ±17.25 kHz for 915 MHz. Due to closed loop modulation with PLL filtering the modulated spectrum is very clean, meeting ETSI and CEPT regulations when using a simple LC filter for the power amplifier harmonics as it is shown in Figure 2.2 on page 8. In ASK mode the frequency is internally connected to the center of the FSK transmission and the power amplifier is switched on and off to perform the modulation. Figure 3-7 on page 19 to Figure 3-9 on page 20 show the spectrum of the FSK modulation with pseudo-random data with 20 Kbit/s/±16.17 kHz/Manchester and 5 dBm output power.
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Figure 3-7. FSK-modulated TX Spectrum (433.92MHz/20 Kbit/s/±16.17 kHz/Manchester Code)
Atten 20 dB
Ref 10 dB Samp Log 10 dB/
VAvg 50 W1 S2 S3 FC
Center 433.92 MHz Res BW 100 kHz
VBW 100 kHz
Span 30 MHz Sweep 7.5 ms (401 pts)
Figure 3-8.
Unmodulated TX Spectrum 433.92 MHz – 16.17 kHz (fFSK_L)
Atten 20 dB Ref 10 dB Samp Log 10 dB/
VAvg 50 W1 S2 S3 FC
Center 433.92 MHz Res BW 10 kHz
VBW 10 kHz
Span 1 MHz Sweep 27.5 ms (401 pts)
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Figure 3-9.
FSK-modulated TX Spectrum (433.92 MHz/20 Kbit/s/±16.17 kHz/Manchester Code)
Atten 20 dB
Ref 10 dB Samp Log 10 dB/
VAvg 50 W1 S2 S3 FC
Center 433.92 MHz Res BW 10 kHz
VBW 10 kHz
Span 1 MHz Sweep 27.5 ms (401 pts)
3.12
Output Power Setting and PA Matching at RF_OUT
The Power Amplifier (PA) is a single-ended open collector stage which delivers a current pulse which is nearly independent of supply voltage, temperature and tolerances due to band gap stabilization. Resistor R1, see Figure 3-10 on page 21, sets a reference current which controls the current in the PA. A higher resistor value results in a lower reference current, a lower output power and a lower current consumption of the PA. The usable range of R1 is 15 kΩ to 56 kΩ. Pin PWR_H switches the output power range between about 0 dBm to 5 dBm (PWR_H = GND) and 5 dBm to 10 dBm (PWR_H = AVCC) by multiplying this reference current by a factor 1 (PWR_H = GND) and 2.5 (PWR_H = AVCC), which corresponds to about 5 dB more output power. If the PA is switched off in TX mode, the current consumption without output stage with VS1 = VS2 = 3 V, Tamb = 25°C is typically 6.5 mA for 868.3 MHz and 6.95 mA for 315 MHz and 433.92 MHz. The maximum output power is achieved with optimum load resistances RLopt according to Table 3-7 on page 22 with compensation of the 1.0 pF output capacitance of the RF_OUT pin by absorbing it into the matching network consisting of L1, C1, C3 as shown in Figure 3-10 on page 21. There must also be a low resistive DC path to AVCC to deliver the DC current of the power amplifier's last stage. The matching of the PA output was done with the circuit shown in Figure 3-10 on page 21 with the values in Table 3-7 on page 22. Note that value changes of these elements may be necessary to compensate for individual board layouts.
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Example: According to Table 3-7 on page 22, with a frequency of 433.92 MHz and output power of 11 dBm the overall current consumption is typically 17.8 mA; hence, the PA needs 17.8 mA - 6.95 mA = 10.85 mA in this mode, which corresponds to an overall power amplifier efficiency of the PA of (10(11dBm/10) × 1 mW)/(3 V × 10.85 mA) × 100% = 38.6% in this case. Using a higher resistor in this example of R1 = 1.091 × 22 kΩ = 24 kΩ results in 9.1% less current in the PA of 10.85 mA/1.091 = 9.95 mA and 10 × log(1.091) = 0.38 dB less output power if using a new load resistance of 300 Ω × 1.091 = 327 Ω. The resulting output power is then 11 dBm – 0.38 dB = 10.6 dBm and the overall current consumption is 6.95 mA + 9.95 mA = 16.9 mA. The values of Table 3-7 on page 22 were measured with standard multi-layer chip inductors with quality factors Q according to Table 3-7 on page 22. Looking to the 433.92 MHz/11 dBm case with the quality factor of QL1 = 43 the loss in this inductor is estimated with the parallel equivalent r e s i s ta n c e o f t h e i n d u c to r R l o s s = 2 × π × f × L × Q L 1 a n d t h e m a tc h i n g l o s s w i t h 10 log (1 + RLopt/Rloss) which is equal to 0.32 dB losses in this inductor. Taking this into account, the PA efficiency is then 42% instead of 38.6%. Be aware that the high power mode (PWR_H = AVCC) can only be used with a supply voltage higher than 2.7V, whereas the low power mode (PWR_H = GND) can be used down to 2.4V as can be seen in the “Electrical Characteristics: General” on page 67. The supply blocking capacitor C 2 ( 10 nF) has to be placed close to the matching network because of the RF current flowing through it. Figure 3-10. Power Setting and Output Matching
AVCC C2
L1 RFOUT C1 10 8
ATA5423/ATA5425/ ATA5428/ATA5429 RF_OUT
C3 R1
R_PWR
9 VPWR_H PWR_H
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Table 3-7.
315 315 315 345 345 345 433.92 433.92 433.92 868.3 868.3 868.3 915 915 915
Measured Output Power and Current Consumption with VS1 = VS2 = 3V, Tamb = 25°C
R1 (kΩ) 56 27 27 56 27 27 56 22 22 33 15 22 33 15 15 VPWR_H GND GND AVCC GND GND AVCC GND GND AVCC GND GND AVCC GND GND AVCC RLopt (Ω) 2500 920 350 2400 900 320 2300 890 300 1170 471 245 1100 465 230 L1 (nH) 82 68 56 82 68 43 56 47 33 12 15 10 12 12 10 QL1 28 32 35 75 74 65 40 38 43 58 54 57 62 62 60 C1 (pF) C3 (pF) 1.5 2.2 3.9 1.2 1.8 3.9 0.75 1.5 2.7 1.0 1.0 1.5 0.7 1.5 1.5 0 0 0 0 0 0 0 0 0 3.3 0 0 0 0 0 8.5 10.5 16.7 8.8 10.4 16.9 8.6 11.2 17.8 9.3 11.5 16.3 9.6 11.8 20.3 0.4 5.7 10.5 1.6 5.9 10.7 0.1 6.2 11 -0.3 5.4 9.5 0.1 4.9 10.2
Frequency (MHz) TX Current (mA) Output Power (dBm)
3.13
Output Power and TX Supply Current versus Supply Voltage and Temperature
Table 3-8 on page 22 shows the measurement of the output power for a typical device with VS = VS1 = VS2 in the 433.92 MHz and 6.2 dBm case versus temperature and supply voltage measured according to Figure 3-10 on page 21 with components according to Table 3-7. As opposed to the receiver sensitivity, the supply voltage has here the major impact on output power variations because of the large signal behavior of a power amplifier. Thus, a two battery system with voltage regulator or a 5V system shows much less variation than a 2.4V to 3.6V one battery system because the supply voltage is then well within 3.0V and 3.6V. The reason is that the amplitude at the output RF_OUT with optimum load resistance is AVCC – 0.4V and the power is proportional to (AVCC – 0.4V) 2 if the load impedance is not changed. This means that the theoretical output power reduction if reducing the supply voltage from 3.0V to 2.4V is 10 log ((3 V – 0.4 V)2/(2.4 V – 0.4 V)2) = 2.2 dB. Table 3-8 shows that principle behavior in the measurement. This is not the same case for higher voltages, since here increasing the supply voltage from 3V to 3.6V should theoretical increase the power by 1.8 dB; but a gain of only 0.8 dB in the measurement shows that the amplitude does not increase with the supply voltage because the load impedance is optimized for 3V and the output amplitude stays more constant. Table 3-8.
VS = Tamb = –40°C Tamb = +25°C Tamb = +85°C
Measured Output Power and Supply Current at 433.92 MHz, PWR_H = GND
2.4 V 10.19 mA 3.8 dBm 10.62 mA 4.6 dBm 11.4 mA 3.9 dBm 3.0 V 10.19 mA 5.5 dBm 11.19 mA 6.2 dBm 12.02 mA 5.5 dBm 3.6 V 10.78 mA 6.2 dBm 11.79 mA 7.1 dBm 12.73 mA 6.6 dBm
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Table 3-9 shows the relative changes of the output power of a typical device compared to 3.0V/25°C. As can be seen, a temperature change to –40°C as well as to +85°C reduces the power by less than 1 dB due to the band gap regulated output current. Measurements of all the cases in Table 3-7 on page 22 over temperature and supply voltage have shown about the same relative behavior as shown in Table 3-9.
Table 3-9.
VS =
Measurements of Typical Output Power Relative to 3V/25°C
2.4V 3.0V 3.6V 0 dB +0.9 dB +0.4 dB
Tamb = –40°C Tamb = +25°C Tamb = +85°C
–2.4 dB –1.6 dB –2.3 dB
–0.7 dB
0 dB
–0.7 dB
3.14
RX/TX Switch
The RX/TX switch decouples the LNA from the PA in TX mode, and directs the received power to the LNA in RX mode. To do this, it has a low impedance to GND in TX mode and a high impedance to GND in RX mode. To design a proper RX/TX decoupling, a linear simulation tool for radio frequency design together with the measured device impedances of Table 3-1 on page 11, Table 3-7 on page 22, Table 3-10 and Table 3-11 on page 24 should be used, but the exact element values have to be found on-board. Figure 3-11 shows an approximate equivalent circuit of the switch. The principal switching operation is described here according to the application of Figure 2-1 on page 7. The application of Figure 2.2 on page 8 works similarly.
Table 3-10.
Impedance of the RX/TX Switch RX_TX2 Shorted to GND
Z(RX_TX1) TX Mode (4.8 + j3.2)Ω (4.7 + j3.4)Ω (4.5 + j4.3)Ω (5 + j9)Ω (5 + j9.2)Ω Z(RX_TX1) RX Mode (11.3 – j214)Ω (11.1 – j181)Ω (10.3 – j153)Ω (8.9 – j73)Ω (9 – j65)Ω
Frequency 315 MHz 345 MHz 433.92 MHz 868.3 MHz 915 MHz
Figure 3-11. Equivalent Circuit of the Switch
RX_TX1
1.6 nH
2.5 pF 11Ω
TX 5Ω
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3.15
Matching Network in TX Mode
In TX mode the 20 mm long and 0.4 mm wide transmission line which is much shorter than λ/4 is approximately switched in parallel to the capacitor C9 to GND. The antenna connection between C8 and C 9 has an impedance of about 50Ω locking from the transmission line into the loop antenna with pin RF_OUT, L2, C10, C8 and C9 connected (using a C9 without the added 7.6 pF as discussed later). The transmission line can be approximated with a 16 nH inductor in series with a 1.5Ω resistor, the closed switch can be approximated according to Table 3-10 on page 23 with the series connection of 1.6 nH and 5Ω in this mode. To have a parallel resonant high impedance circuit with little RF power going into it looking from the loop antenna into the transmission line a capacitor of about 7.6 pF to GND is needed at the beginning of the transmission line (this capacitor is later absorbed into C9 which is then higher, as needed for 50Ω transformation). To keep the 50Ω impedance in RX mode at the end of this transmission line, C7 also has to be about 7.6 pF. This reduces the TX power by about 0.5 dB at 433.92 MHz compared to the case the where the LNA path is completely disconnected.
3.16
Matching Network in RX Mode
In RX mode the RF_OUT pin has a high impedance of about 7 kΩ in parallel with 1.0 pF at 433.92 MHz as can be seen in Table 3-11. This, together with the losses of the inductor L2 with 120 nH and QL2 = 25, gives about 3.7 kΩ loss impedance at RF_OUT. Since the optimum load impedance in TX mode for the power amplifier at RF_OUT is 890 Ω the loss associated with the inductor L2 and the RF_OUT pin can be estimated to be 10 × log(1 + 890/3700) = 0.95 dB compared to the optimum matched loop antenna without L2 and RF_OUT. The switch represents, in this mode at 433.92 MHz, approximately an inductor of 1.6 nH in series with the parallel connection of 2.5 pF and 2.0 kΩ. Since the impedance level at pin RX_TX1 in RX mode is about 50Ω this only negligibly dampens the received signal (by about 0.1 dB). When matching the LNA to the loop antenna, the transmission line and the 7.6 pF part of C9 have to be taken into account when choosing the values of C11 and L1 so that the impedance seen from the loop antenna into the transmission line with the 7.6 pF capacitor connected is 50Ω. Since the loop antenna in RX mode is loaded by the LNA input impedance, the loaded Q of the loop antenna is lowered by about a factor of 2 in RX mode; hence the antenna bandwidth is higher than in TX mode.
Table 3-11.
Impedance RF_OUT Pin in RX Mode
Z(RF_OUT)RX 36Ω – j 502Ω 33Ω – j 480Ω 19Ω – j 366Ω 2.8Ω – j 141Ω 2.6Ω – j 135Ω RP//CP 7 kΩ//1.0 pF 7 kΩ//1.0 pF 7 kΩ//1.0 pF 7 kΩ//1.3 pF 7 kΩ//1.3 pF
Frequency 315 MHz 345 MHz 433.92 MHz 868.3 MHz 915 MHz
Note that if matching to 50Ω, like in Figure 2.2 on page 8, a high Q wire-wound inductor with a Q > 70 should be used for L2 to minimize its contribution to RX losses that will otherwise be dominant. The RX and TX losses will be in the range of 1.0 dB there.
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4. XTO
The XTO is an amplitude-regulated Pierce oscillator type with integrated load capacitances (2 × 18 pF with a tolerance of ±17%) hence CLmin = 7.4 pF and CLmax = 10.6 pF. The XTO oscillation frequency fXTO is the reference frequency FREF for the fractional-N synthesizer. When designing the system in terms of receiving and transmitting frequency offset, the accuracy of the crystal and XTO have to be considered. The synthesizer can adjust the local oscillator frequency for the initial frequency error in fXTO. This is done at nominal supply voltage and temperature with the control registers 2 and 3 (see Table 7-7 and Table 7-10). The remaining local oscillator tolerance at nominal supply voltage and temperature is then < ±0.5 ppm. The XTO’s gm has very low influence of less than ±2 ppm on the frequency at nominal supply voltage and temperature. In a single channel system less than ±150 ppm should be corrected to avoid that harmonics of the CLK output disturb the receive mode. If the CLK is not used or if it is carefully laid out on the application PCB (as needed for multi channel systems), more than ±150 ppm can be compensated. Over temperature and supply voltage, the XTO's additional pulling is only ±2 ppm. The XTAL versus temperature and its aging is then the main source of frequency error in the local oscillator. The XTO frequency depends on XTAL properties and the load capacitances CL1, 2 at pin XTAL1 and XTAL2. The pulling of fXTO from the nominal fXTAL is calculated using the following formula:
C LN – C L Cm 6 P = ------- × ------------------------------------------------------------ × 10 ppm. 2 ( C 0 + C LN ) × ( C 0 + C L )
Cm is the crystal's motional, C0 the shunt and CLN the nominal load capacitance of the XTAL found in its data sheet. CL is the total actual load capacitance of the crystal in the circuit and consists of CL1 and CL2 in series connection. Figure 4-1. XTAL with Load Capacitance
Crystal equivalent circuit
XTAL
C0
Lm CL1 CL2
Cm
Rm
CL = CL1 × CL2/ (CL1 + CL2)
With C m ≤14 fF, C0 ≥ 1.5 pF, C LN = 9 pF and C L = 7.4 pF to 10.6 pF, the pulling amounts to P ≤±100 ppm and with Cm ≤7 fF, C0 ≥ 1.5 pF, CLN = 9 pF and CL = 7.4 pF to 10.6 pF, the pulling is P ≤ ±50 ppm. Since typical crystals have less than ±50 ppm tolerance at 25°C, the compensation is not critical, and can in both cases be done with the ±150 ppm.
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C0 of the XTAL has to be lower than CLmin/2 = 3.7 pF for a Pierce oscillator type in order to not enter the steep region of pulling versus load capacitance where there is a risk of an unstable oscillation. To ensure proper start-up behavior the small signal gain, and thus the negative resistance, provided by this XTO at start is very large; for example, oscillation starts up even in worst case with a crystal series resistance of 1.5 kΩ at C 0 ≤2.2 pF with this XTO. The negative resistance is approximately given by
⎧ Z1 × Z3 + Z2 × Z3 + Z1 × Z2 × Z3 × gm ⎫ Re { XTOcore } = Re ⎨ ----------------------------------------------------------------------------------------------------- ⎬ Z Z1 + Z2 + Z3 + Z1 × Z2 × gm ⎩ ⎭
with Z1, Z2 as complex impedances at pin XTAL1 and XTAL2, hence Z1 = –j/(2 × π × fXTO × CL1) + 5Ω and Z2 = –j/(2 × π × fXTO × CL2) + 5Ω. Z3 consists of crystals C0 in parallel with an internal 110 kΩ resistor hence Z3 = –j/(2 × π × fXTO × C0) /110 kΩ, gm is the internal transconductance between XTAL1 and XTAL2 with typically 19 mS at 25°C. With fXTO = 13.5 MHz, gm = 19 mS, CL = 9 pF, and C0 = 2.2 pF, this results in a negative resistance of about 2 kΩ. The worst case for technological, temperature and supply voltage variations is then for C0 ≤2.2 pF always higher than 1.5 kΩ. Due to the large gain at startup, the XTO is able to meet a very low start-up time. The oscillation start-up time can be estimated with the time constant τ .
2 τ = ----------------------------------------------------------------------------------------------------------2 2 4 × π × f m × C m × ( Re ( Z XTOcore ) + R m )
After 10 τ to 20 τ an amplitude detector detects the oscillation amplitude and sets XTO_OK to High if the amplitude is large enough. This sets N_RESET to High and activates the CLK output if CLK_ON in control register 3 is High (see Table 7-7). Note that the necessary conditions of the VSOUT and DVCC voltage also have to be fulfilled (see Figure 4-2 and Figure 5-1). To save current in IDLE and Sleep modes, the load capacitors are partially switched off in these modes with S1 and S2, as seen in Figure 4-2. It is recommended to use a crystal with C m = 3.0 fF to 7.0 fF, C LN = 9 pF, R m < 120 Ω a nd C0 = 1.0 pF to 2.2 pF. Lower values of Cm can be used, this increases the start-up time slightly. Lower values of C0 or higher values of Cm (up to 15 fF) can also be used, this has only little influence on pulling.
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Figure 4-2. XTO Block Diagram
XTAL1
XTAL2
CLK
&
fXTO
Divider /3 CLK_ON (control register 3) Amplitude detector
DVCC_OK (from power supply) VSOUT_OK (from power supply)
8 pF
10 pF
10 pF
8 pF
CL1
S1
CL2
S2
XTO_OK (to reset logic)
Divider /16 In IDLE mode and during Sleep mode (RX_Polling) the switches S1 and S2 are open. Divider /1 /2 /4 /8 /16
fDCLK
fXDCLK
Baud1 Baud0 XLim
To find the right values used in control registers 2 and 3 (see Table 7-7 and Table 7-10), the relationship between fXTO and the fRF is shown in Table 4-1 on page 28. To determine the right content, the frequency at pin CLK as well as the output frequency at RF_OUT in ASK mode can be measured, then the FREQ value can be calculated according to Table 4-1 on page 28 so that fRF is exactly the desired radio frequency.
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Table 4-1.
Frequency (MHz) 315
Calculation of fRF
Pin 6 433_N868 AVCC CREG1 Bit(4) FS 1 Frequency Resolution 777.1 Hz
fXTO (MHz) 12.73193
fRF = fTX_ASK = fRX f XTO × ⎛ 24.5 + FREQ + 20.5⎞ --------------------------------⎝ 16384 ⎠ f XTO × ⎛ 24.5 + FREQ + 20.5⎞ --------------------------------⎝ 16384 ⎠ FREQ + 20.5 f XTO × ⎛ 32.5 + --------------------------------- ⎞ ⎝ 16384 ⎠ f XTO × ⎛ 64.5 + FREQ + 20.5⎞ --------------------------------⎝ 16384 ⎠ f XTO × ⎛ 64.5 + FREQ + 20.5⎞ --------------------------------⎝ 16384 ⎠
fTX_FSK_L fRF –15.54 kHz
fTX_FSK_H fRF + 15.54 kHz fRF + 17.02 kHz fRF + 16.17 kHz fRF + 16.37 kHz fRF + 17.25 kHz
345
AVCC
0
13.94447
fRF –17.02 kHz
851.1 Hz
433.92
AVCC
0
13.25311
fRF –16.17 kHz
808.9 Hz
868.3
GND
0
13.41191
fRF –16.37 kHz
818.6 Hz
915
GND
0
14.13324
fRF –17.25 kHz
862.6 Hz
The variable FREQ depends on FREQ2 and FREQ3, which are defined by the bits FR0 to FR12 in control register 2 and 3, and is calculated as follows: FREQ = FREQ2 + FREQ3 Care must be taken to the harmonics of the CLK output signal fCLK as well as to the harmonics produced by an microprocessor clocked with it, since these harmonics can disturb the reception of signals if they get to the RF input. In a single channel system, using FREQ = 3803 to 4053 ensures that the harmonics of this signal do not disturb the receive mode. In a multichannel system, the CLK signal can either be not used or carefully laid out on the application PCB. The supply voltage of the microcontroller must also be carefully blocked in a multichannel system.
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4.1 Pin CLK
Pin CLK is an output to clock a connected microcontroller. The clock frequency fCLK is calculated as follows:
f XTO f CLK = ---------3
Because the enabling of pin CLK is asynchronous, the first clock cycle may be incomplete. The signal at CLK output has a nominal 50% duty cycle. Figure 4-3. Clock Timing
VThres_2 = 2.38V (typically) VSOUT VThres_1 = 2.3V (typically)
CLK
N_RESET
CLK_ON (Control register 3)
4.2
Basic Clock Cycle of the Digital Circuitry
The complete timing of the digital circuitry is derived from one clock. As shown in Figure 4-2 on page 27, this clock cycle TDCLK is derived from the crystal oscillator (XTO) in combination with a divider.
f XTO f DCLK = ---------16
TDCLK controls the following application relevant parameters: • Timing of the polling circuit including bit check • TX bit rate The clock cycle of the bit check and the TX bit rate depends on the selected bit-rate range (BR_Range) which is defined in control register 6 (see Table 7-20 on page 42) and XLim which is defined in control register 4 (see Table 7-13 on page 40). This clock cycle TXDCLK is defined by the following formulas for further reference: BR_Range ⇒ BR_Range 0: TXDCLK = 8 × BR_Range 1: TXDCLK = 4 × BR_Range 2: TXDCLK = 2 × BR_Range 3: TXDCLK = 1 × TDCLK × TDCLK × TDCLK × TDCLK × XLim XLim XLim XLim
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5. Power Supply
Figure 5-1. Power Supply
VS1 SW_AVCC VS2 IN V_REG1 3.25V typ. OUT AVCC
VSINT
EN
(Control register 1)
AVCC_EN PWR_ON T1 to T5 DVCC_OK OFFCMD
(Command via SPI)
≥1
FF1 SQ R SW_VSOUT DVCC SW_DVCC V_Monitor (1.5V typ.) and V_Monitor (2.3V/ 2.38V typ.) DVCC_OK (to XTO and Reset Logic) VSOUT_OK (to XTO and Reset Logic) Low_Batt (Status Register and Reset Logic) VSOUT
≥1
S 0 0 1 1 R 0 1 0 1 Q no change 0 1 1
VS1+ 0.55V typ.
+
P_On_Aux
(Status register)
VAUX
IN
V_REG2 3.25V typ.
OUT
VSOUT_EN
(Control register 3)
EN
The supply voltage range of the ATA5423/ATA5425/ATA5428/ATA5429 is 2.4V to 3.6V or 4.4V to 6.6V. Pin VS1 is the supply voltage input for the range 2.4V to 3.6V and is used in 1 Li battery applications (3V) using a single lithium 3V cell. Pin VS2 is the voltage input for the range 4.4V to 6.6V (2 Li battery application (6V) and Base-station Application (5V); in this case, the voltage regulator V_REG1 regulates VS1 to typically 3.25V. If the voltage regulator is active, a blocking capacitor of 2.2 µF has to be connected to VS1. Pin VAUX is an input for an additional auxiliary voltage supply and can be connected, for example, to an inductive supply (see Figure 5-6 on page 36). This input can only be used together with a rectifier or as in the application shown in Figure 2.2 on page 8 and must otherwise be left open. Pin VSINT is the voltage input for the Microcontoller_Interface and must be connected to the power supply of the microcontroller. The voltage range of VVSINT is 2.4V to 5.25V (see Figure 5-5 on page 35 and Figure 5-6 on page 36).
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AVCC is the internal operation voltage of the RF transceiver and is fed by VS1 via the switch SW_AVCC. AVCC must be blocked with a 68 nF capacitor (see Figure 2-1 on page 7, Figure 2.2 on page 8 and Figure 2-3 on page 9). DVCC is the internal operation voltage of the digital control logic and is fed by VS1 or VSOUT via the switch SW_DVCC. DVCC must be blocked on pin DVCC with 68 nF (see Figure 2-1 on page 7, Figure 2.2 on page 8 and Figure 2-3 on page 9). Pin VSOUT is a power supply output voltage for external devices (for example, microcontrollers) and is fed by VS1 via the switch SW_VSOUT, or by the auxiliary voltage supply VAUX via V_REG2. The voltage regulator V_REG2 regulates VSOUT to typically 3.25V. If the voltage regulator is active, a blocking capacitor of 2.2 µF has to be connected to VSOUT. VSOUT can be switched off by the VSOUT_EN bit in control register 3 and is then reactivated by conditions found in Figure 5-2 on page 32. Pin N_RESET is set to low if the voltage VVSOUT at pin VSOUT drops below 2.3V (typically) and can be used as a reset signal for a connected microcontroller (see Figure 5-3 on page 34 and Figure 5-4 on page 35). Pin PWR_ON is an input to switch on the transceiver (active high). Pin T1 to T5 are inputs for push buttons and can also be used to switch on the transceiver (active low). For current consumption reasons it is recommended to set T1 to T5 to GND, or PWR_ON to VCC only temporarily. Otherwise, an additional current flows because of a 50 kΩ pull-up resistor. There are two voltage monitors generating the following signals (see Figure 5-1 on page 30): • DVCC_OK if DVCC > 1.5V typically • VSOUT_OK if VSOUT > VThres1 (2.3V typically) • Low_Batt if VSOUT < VThres2 (2.38V typically)
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Figure 5-2.
Operation Modes Flow Chart
Bit AVCC_EN = 0 and OFF Command and Pin PWR_ON = 0 and Pin T1, T2, T3, T4 and T5 = 1
OFF Mode AVCC = OFF DVCC = OFF VSOUT = OFF
VVAUX < 3.5V (typ)
Pin PWR_ON = 1 or Pin T1, T2, T3, T4 or Pin T5
VVAUX > 3.5V (typ)
IDLE Mode AVCC = VS1 DVCC = VS1 VSOUT = VS1
VVAUX < VS1 + 0.5V
IDLE Mode AVCC = VS1 DVCC = VS1 VSOUT = V_REG2
Pin PWR_ON = 1 or Pin T1, T2, T3, T4 or Pin T5 or Bit AVCC_EN = 1
AUX Mode AVCC = OFF DVCC = V_REG2 VSOUT = V_REG2
VVAUX > VS1 + 0.5V
OPM1 OPM0 0 1 TX Mode 1 0 RX Polling Mode 1 1 RX Mode
OPM1 = 0 and OPM0 = 0
Bit AVCC_EN = 0 and OFF Command and Pin PWR_ON = 0 and Pin T1, T2, T3, T4 and T5 = 1 VSOUT_EN = 0
IDLE Mode AVCC = VS1 DVCC = VS1 VSOUT = OFF
Statusbit Power_On = 1 or Event on Pin T1, T2, T3, T4 or T5
OPM1 = 0 and OPM0 = 1
TX Mode AVCC = VS1 DVCC = VS1 VSOUT = VS1 or V_REG2
OPM1 = 0 and OPM0 = 1 RX Polling Mode
OPM1 = 1 and OPM0 = 0
RX Mode AVCC = VS1 DVCC = VS1 VSOUT = VS1 or V_REG2
OPM1 = 1 and OPM0 = 0
AVCC = VS1 DVCC = VS1 VSOUT = VS1 or V_REG2
OPM1 = 1 and OPM0 = 1 or Bit check ok
OPM1 = 1 and OPM0 = 1
VSOUT_EN = 0
Status bit Power_On = 1 or Event on Pin T1, T2, T3, T4 or T5
RX Polling Mode AVCC = VS1 DVCC = VS1 VSOUT = OFF
Bit check ok
5.1
OFF Mode
If the power supply (battery) is connected to pin VS1 and/or VS2, and if the voltage on pin VAUX VVAUX < 3.5V (typically), then the transceiver is in OFF mode. In OFF mode AVCC, DVCC and VSOUT are disabled, resulting in very low power consumption (IS_OFF is typically 10 nA). In OFF mode the transceiver is not programmable via the 4-wire serial interface.
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5.2 AUX Mode
The transceiver changes from OFF mode to AUX mode if the voltage at pin VAUX VVAUX > 3.5V (typically). In AUX mode DVCC and VSOUT are connected to the auxiliary power supply input (VAUX) via the voltage regulator V_REG2. In AUX mode the transceiver is programmable via the 4-wire serial interface, but no RX or TX operations are possible because AVCC = OFF. The state transition OFF mode to AUX mode is indicated by an interrupt at pin IRQ and the status bit P_On_Aux = 1.
5.3
IDLE Mode
In IDLE mode AVCC and DVCC are connected to the battery voltage (VS1). From OFF mode the transceiver changes to IDLE mode if pin PWR_ON is set to 1 or pin T1, T2, T3, T4 or T5 is set to “0”. This state transition is indicated by an interrupt at pin IRQ and the status bits Power_On = 1 or ST1, ST2, ST3, ST4 or ST5 = 1. From AUX mode the transceiver changes to IDLE mode by setting AVCC_EN = 1 in control register 1 via the 4-wire serial interface or if pin PWR_ON is set to “1” or pin T1, T2, T3, T4 or T5 is set to “0”. VSOUT is either connected to VS1 or to the auxiliary power supply (V_REG2). If VVAUX < VS1 + 0.5V, VSOUT is connected to VS1. If VVAUX > VS1 + 0.5V, VSOUT is connected to V_REG2 and the status bit P_On_Aux is set to “1”. In IDLE mode, the RF transceiver is disabled and the power consumption IS_IDLE is about 230 µA (VSOUT OFF and CLK output OFF and VS = VS1 = VS2 = 3V). The exact value of this current is strongly dependent on the application and the exact operation mode, therefore check the section “Electrical Characteristics: General” on page 67 for the appropriate application case. Via the 4-wire serial interface a connected microcontroller can program the required parameter and enable the TX, RX polling or RX mode. The transceiver can be set back to OFF mode by an OFF command via the 4-wire serial interface (the bit AVCC_EN must be set to “0”, the input level of pin PWR_ON must be “0” and pin T1, T2, T3, T4 and T5 = 1 before writing the OFF command).
Table 5-1.
Control Register 1
OPM1 0 OPM0 0 Function IDLE mode
5.4
Reset Timing and Reset Logic
If the transceiver is switched on (OFF mode to IDLE mode, OFF mode to AUX mode) DVCC and VSOUT ramp up as illustrated in Figure 5-3 on page 34 (AVCC only ramps up if the transceiver is set to the IDLE mode). The internal signal DVCC_RESET resets the digital control logic and sets the control register to default values. A voltage monitor generates a low level at pin N_RESET until the voltage at pin VSOUT exceeds 2.38V (typically) and the start-up time of the XTO has elapsed (amplitude detector, see Figure 4-2 on page 27). After the voltage at pin VSOUT exceeds 2.3V (typically) and the start-up time of the XTO has elapsed, the output clock at pin CLK is available. Because the enabling of pin CLK is asynchronous, the first clock cycle may be incomplete.
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The status bit Low_Batt is set to “1” if the voltage at pin VSOUT VVSOUT drops below VThres_2 (typically 2.38V). Low_Batt is set to “0” if VVSOUT exceeds VThres_2 and the status register is read via the 4-wire serial interface or N_RESET is set to low. If VVSOUT drops below VThres_1 (typically 2.3V), N_RESET is set to low. If bit VSOUT_EN in control register 3 is “1”, a DVCC_RESET is also generated. If VVSOUT was already disabled by the connected microcontroller by setting bit VSOUT_EN = 0, no DVCC_RESET is generated.
Note: If VSOUT < VThres_1 (typically 2.3 V) the output of the pin CLK is low, the Microcontroller_Interface is disabled and the transceiver is not programmable via the 4-wire serial interface.
Figure 5-3.
Reset Timing
VThres_2 = 2.38V (typ) VThres_1 = 2.3V (typ)
VSOUT
1.5V (typically) DVCC (AVCC)
DVCC_RESET VSOUT > 2.38V and the XTO is running N_RESET
LOW_Batt
(Status Register)
VSOUT_EN
(Control Register 3)
VSOUT > 2.3V and the XTO is running VSOUT
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Figure 5-4. Reset Logic, SR Latch Generates the Hysteresis in the NRESET Signal
DVCC_OK and XTO_OK VSOUT_EN and N_RESET and VSOUT_OK
SR Q no change 0 1 no change
≥1
DVCC_RESET
S
Q
LOW_BATT
R
Q
0 0 1 1 0 1 0 1
5.5
1 Li Battery Application (3V)
The supply voltage range is 2.4V to 3.6V and VAUX is not used. Figure 5-5. 1 Li Battery Application (3V)
ATA5423/ATA5425/ ATA5428/ATA5429 VS1 VS2 VAUX RF Transceiver Digital Control Logic AVCC DVCC VSOUT VSINT CS Microcontroller_Interface SCK SDI_TMDI SDO_TMDO IRQ CLK NRESET DEM_OUT OUT OUT OUT IN IN IN IN VS 2.4V to 3.6V ATmega 48/88/168
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5.6
2 Li Battery Application (6V)
The supply voltage range is 4.4V to 6.6V and VAUX is connected to an inductive supply. Figure 5-6. 2 Li Battery Application (6V) with Inductive Emergency Supply
ATA5423/ATA5425/ ATA5428/ATA5429 VS1 VS2 4.4V to 6.6V ATmega 48/88/168
VAUX
RF Transceiver Digital Control Logic
AVCC DVCC VSOUT VSINT CS OUT OUT OUT IN IN IN IN VS
Microcontroller_Interface
SCK SDI_TMDI SDO_TMDO IRQ CLK NRESET DEM_OUT
6. Microcontroller Interface
The microcontroller interface is a level converter which converts all internal digital signals that are referred to the DVCC voltage into the voltage used by the microcontroller. Therefore, the pin VSINT has to be connected to the supply voltage of the microcontroller. This makes it possible to use the internal voltage regulator/switch at pin VSOUT as in Figure 2-1 on page 7 and Figure 2-3 on page 9 or to connect the microcontroller and the pin VSINT directly to the supply voltage of the microcontroller as in Figure 2.2 on page 8.
7. Digital Control Logic
7.1 Register Structure
The configuration of the transceiver is stored in RAM cells. The RAM contains a 16 × 8-bit TX/RX data buffer and a 6 × 8-bit control register and is writable and readable via a 4-wire serial interface (CS, SCK, SDI_TMDI, SDO_TMDO). The 1 × 8-bit status register is not part of the RAM and is readable via the 4-wire serial interface. The RAM and the status information are stored as long as the transceiver is in any active mode (DVCC = VS1 or DVCC = V_REG2) and are lost when the transceiver switches to OFF mode (DVCC =OFF).
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After the transceiver is turned on via pin PWR_ON = High, T1 = Low, T2 = Low, T3 = Low, T4 = Low or T5 = Low or the voltage at pin VAUX VVAUX > 3.5V (typically), the control registers are in the default state. Figure 7-1. Register Structure
LSB
MSB
TX/RX Data Buffer: 16 × 8 Bit
IR1
IR0
AVCC _EN
FS
-
OPM1 OPM0
T_ MODE P_ MODE
Control Register 1 (ADR 0)
FR6
FR5
FR4
FR3
FR2
FR1
FR0
Control Register 2 (ADR 1)
FR12
FR11
FR10
FR9
FR8
FR7
VSOUT CLK_ _EN ON
Control Register 3 (ADR 2)
ASK/ NFSK
Sleep 4
Sleep 3 Lim_ min5 Lim_ max5
Sleep 2 Lim_ min4 Lim_ max4
Sleep 1 Lim_ min3 Lim_ max3
Sleep XSleep XLim 0 Lim_ min2 Lim_ max2 Lim_ min1 Lim_ max1 Lim_ min0 Lim_ max0
Control Register 4 (ADR 3)
BitChk BitChk 1 0 Baud 1 Baud 0
Control Register 5 (ADR 4)
Control Register 6 (ADR 5)
ST5
ST4
ST3
ST2
ST1
Power_ Low_ On Batt
P_On _Aux
Status Register (ADR 8)
7.2
TX/RX Data Buffer
The TX/RX data buffer is used to handle the data transfer during RX and TX operations.
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7.3
Control Register
To use the transceiver in different applications, it can be configured by a connected microcontroller via the 4-wire serial interface.
7.3.1
Control Register 1 (ADR 0) Table 7-1.
IR1 0 0 1 1 IR0 0 1 0 1
Control Register 1 (Function of Bit 7 and Bit 6 in RX Mode)
Function (RX Mode) Pin IRQ is set to “1” if 4 received bytes are in the TX/RX data buffer or a receiving error occurred Pin IRQ is set to “1” if 8 received bytes are in the TX/RX data buffer or a receiving error occurred Pin IRQ is set to “1” if 12 received bytes are in the TX/RX data buffer or a receiving error occurred (default) Pin IRQ is set to “1” if a receiving error occurred
Table 7-2.
IR1 0 0 1 1 IR0 0 1 0 1
Control Register 1 (Function of Bit 7 and Bit 6 in TX Mode)
Function (TX Mode) Pin IRQ is set to “1” if 4 bytes remain in the TX/RX data buffer or the TX data buffer is empty Pin IRQ is set to “1” if 8 bytes remain in the TX/RX data buffer or the TX data buffer is empty Pin IRQ is set to “1” if 12 bytes remain in the TX/RX data buffer or the TX data buffer is empty (default) Pin IRQ is set to “1” if the TX data buffer is empty
Table 7-3.
AVCC_EN 0 1
Control Register 1 (Function of Bit 5)
Function (default) Enables AVCC, if the ATA5423/ATA5425 is in AUX mode
Table 7-4.
FS 0 1
Control Register 1 (Function of Bit 4)
Function (RX Mode, TX Mode) Selected frequency 345/433/868/915 MHz (default) Selected frequency 315 MHz
Table 7-5.
OPM1 0 0 1 1
Control Register 1 (Function of Bit 2 and Bit 1)
OPM0 0 1 0 1 Function IDLE mode (default) TX mode RX polling mode RX mode
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Table 7-6.
T_MODE 0 1
Control Register 1 (Function of Bit 0)
Function TX and RX function via TX/RX data buffer (default) Transparent mode, TX/RX data buffer disabled, TX modulation data stream via pin SDI_TMDI, RX modulation data stream via pin SDO_TMDO
7.3.2
Control Register 2 (ADR 1) Table 7-7.
FR6 26 0 0 . 1 . 1 Note:
Control Register 2 (Function of Bit 7, Bit 6, Bit 5, Bit 4, Bit 3, Bit 2 and Bit 1)
FR5 25 0 0 . 0 . FR4 24 0 0 . 1 . FR3 23 0 0 . 1 . FR2 22 0 0 . 0 . FR1 21 0 0 . 0 . FR0 20 0 1 . 0 . FREQ2 = 88 (default) Function FREQ2 = 0 FREQ2 = 1
1 1 1 1 1 1 FREQ2 = 127 Tuning of fRF LSBs (total 13 bits), frequency trimming resolution of fRF is fXTO/16384, which is approximately 800 Hz (see section “XTO”, Table 4-1 on page 28)
Table 7-8.
P_MODE 0 1
Control Register 2 (Function of Bit 0 in RX Mode)
Function (RX Mode) Pin IRQ is set to “1” if the bit check is successful (default) No effect on pin IRQ if the bit check is successful
Table 7-9.
P_MODE 0 1
Control Register 2 (Function of Bit 0 in TX Mode)
Function (TX Mode) Manchester modulator on (default) Manchester modulator off (NRZ mode)
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7.3.3
Control Register 3 (ADR 2)
Table 7-10.
FR12 212
Control Register 3 (Function of Bit 7, Bit 6, Bit 5, Bit 4, Bit 3 and Bit 2)
FR11 211 FR10 210 FR9 29 FR8 28 FR7 27
Function FREQ3 = 0 FREQ3 = 128 FREQ3 = 256 . FREQ3 = 3840 (default) . FREQ3 = 7936 FREQ3 = 8064
0 0 0 . 0 . 1 1 Note:
0 0 0 . 1 . 1 1
0 0 0 . 1 . 1 1
0 0 0 . 1 . 1 1
0 0 1 . 1 . 1 1
0 1 0 . 0 . 0 1
Tuning of fRF MSBs
Table 7-11.
VSOUT_EN 0 1 Note:
Control Register 3 (Function of Bit 1)
Function Output voltage power supply for external devices off (pin VSOUT)
Output voltage power supply for external devices on (default) This bit is set to “1” if the bit check is OK (RX_Polling, RX mode), an event at pin T1, T2, T3, T4 or T5 occurs or the bit Power_On in the status register is “1”. Setting VSOUT_EN = 0 in AUX mode is not allowed
Table 7-12.
CLK_ON 0 1 Note:
Control Register 3 (Function of Bit 0)
Function Clock output off (pin CLK)
Clock output on (default) This bit is set to “1” if the bit check is OK (RX_Polling, RX mode), an event at pin T1, T2, T3, T4 or T5 occurs or the bit Power_On in the status register is “1”.
7.3.4
Control Register 4 (ADR 3) Table 7-13.
ASK_NFSK 0 1
Control Register 4 (Function of Bit 7)
Function (TX Mode, RX Mode) FSK mode (default) ASK mode
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Table 7-14.
Sleep4 24 0 0 . 0 . 1
Control Register 4 (Function of Bit 6, Bit 5, Bit 4, Bit 3 and Bit 2)
Sleep2 22 0 0 . 0 . 1 Sleep1 21 0 0 . 1 . 1 Sleep0 20 0 1 . 0 . 1 31 10 (TSleep = 10 × 1024 × TDCLK × XSleep) (default) Function (RX Mode) Sleep (TSleep = Sleep × 1024 × TDCLK × XSleep) 0 1
Sleep3 23 0 0 . 1 . 1
Table 7-15.
XSleep 0 1
Control Register 4 (Function of Bit 1)
Function XSleep = 1; extended TSleep off (default) XSleep = 8; extended TSleep on
Table 7-16.
XLim 0 1
Control Register 4 (Function of Bit 0)
Function XLim = 1; extended TLim_min, TLim_max off (default) XLim = 2; extended TLim_min, TLim_max on
7.3.5
Control Register 5 (ADR 4) Table 7-17.
BitChk1 0 0 1 1
Control Register 5 (Function of Bit 7 and Bit 6)
BitChk0 0 1 0 1 Function NBit-check = 0 (0 bits checked during bit check) NBit-check = 3 (3 bits checked during bit check) (default) NBit-check = 6 (6 bits checked during bit check) NBit-check = 9 (9 bits checked during bit check)
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Table 7-18.
Control Register 5 (Function of Bit 5, Bit 4, Bit 3, Bit 2, Bit 1 and Bit 0 in RX Mode)
Function (RX Mode) Lim_min (Lim_min < 10 are not applicable) (TLim_min = Lim_min × TXDCLK) 10 11 16 (TLim_min = 16 × TXDCLK) (default) 63
Lim_min5 0 0 . 0 . 1
Lim_min4 0 0 . 1 . 1
Lim_min3 1 1 . 0 . 1
Lim_min2 0 0 . 0 . 1
Lim_min1 1 1 . 0 . 1
Lim_min0 0 1 . 0 . 1
Table 7-19.
Control Register 5 (Function of Bit 5, Bit 4, Bit 3, Bit 2, Bit 1 and Bit 0 in TX Mode)
Function (TX Mode) Lim_min (Lim_min < 10 are not applicable) (TX_Bitrate = 1/((Lim_min + 1) × TXDCLK × 2) 10 11 16 (TX_Bitrate = 1/((16 + 1) × TXDCLK × 2) (default) 63
Lim_min5 0 0 . 0 . 1
Lim_min4 0 0 . 1 . 1
Lim_min3 1 1 . 0 . 1
Lim_min2 0 0 . 0 . 1
Lim_min1 1 1 . 0 . 1
Lim_min0 0 1 . 0 . 1
7.3.6
Control Register 6 (ADR 5) Table 7-20.
Baud1 0 0 1
Control Register 6 (Function of Bit 7 and Bit 6)
Baud0 0 1 0 Function Bit-rate range 0 (B0) 1.0 Kbit/s to 2.5 Kbit/s; TXDCLK = 8 × TDCLK × XLim Bit-rate range 1 (B1) 2.0 Kbit/s to 5.0 Kbit/s; TXDCLK = 4 × TDCLK × XLim Bit-rate range 2 (B2) 4.0 Kbit/s to 10.0 Kbit/s; TXDCLK = 2 × TDCLK × XLim; (default) Bit-rate range 3 (B3) 8.0 Kbit/s to 20.0 Kbit/s; TXDCLK = 1 × TDCLK × XLim Note that the receiver does not work with >10 Kbit/s in ASK mode
1
1
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Table 7-21. Control Register 6 (Function of Bit 5, Bit 4, Bit 3, Bit 2, Bit 1 and Bit 0)
Function Lim_max (Lim_max < 12 is not Applicable) (TLim_max = (Lim_max – 1) × TXDCLK) 12 13 28 (TLim_max = (28 – 1) × TXDCLK) (default) 63
Lim_max5 0 0 . 0 . 1
Lim_max4 0 0 . 1 . 1
Lim_max3 1 1 . 1 . 1
Lim_max2 1 1 . 1 . 1
Lim_max1 0 0 . 0 . 1
Lim_max0 0 1 . 0 . 1
7.4
Status Register
The status register indicates the current status of the transceiver and is readable via the 4-wire serial interface. Setting Power_On or P_On_Aux or an event on ST1, ST2, ST3, ST4 or ST5 is indicated by an IRQ. Reading the status register resets the bits Power_On, Low_Batt, P_On_Aux and the IRQ.
7.4.1
Status Register (ADR 8) Table 7-22.
Status Bit
Status Register
Function Status of pin T5 Pin T5 = 0 → ST5 = 1 Pin T5 = 1 → ST5 = 0 (see Figure 7-3 on page 45) Status of pin T4 Pin T4 = 0 → ST4 = 1 Pin T4 = 1 → ST4 = 0 (see Figure 7-3 on page 45) Status of pin T3 Pin T3 = 0 → ST3 = 1 Pin T3 = 1 → ST3 = 0 (see Figure 7-3 on page 45) Status of pin T2 Pin T2 = 0 → ST2 = 1 Pin T2 = 1 → ST2 = 0 (see Figure 7-3 on page 45) Status of pin T1 Pin T1 = 0 → ST1 = 1 Pin T1 = 1 → ST1 = 0 (see Figure 7-3 on page 45)
ST5
ST4
ST3
ST2
ST1
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Table 7-22.
Status Bit
Status Register (Continued)
Function Indicates that the transceiver was woken up by pin PWR_ON (rising edge on pin PWR_ON). During Power_On = 1, the bits VSOUT_EN and CLK_ON in control register 3 are set to “1”. (see Figure 7-4 on page 46) Indicates that output voltage on pin VSOUT is too low (VVSOUT < 2.38V typically) (see Figure 7-5 on page 47) Indicates that the auxiliary supply voltage on pin VAUX is high enough to operate. State transition: a) OFF mode → AUX mode (see Figure 5-2 on page 32) b) IDLE mode (VSOUT = VS1) → IDLE mode (VSOUT = V_REG2) (see Figure 7-6 on page 48)
Power_On
Low_Batt
P_On_Aux
7.5
Pin Tn
To switch the transceiver from OFF to IDLE mode, pin Tn must be set to “0” (maximum 0.2 × VVS2) for at least TTn_IRQ (see Figure 7-2). The transceiver recognizes the negative edge, sets pin N_RESET to low and switches on DVCC, AVCC and the power supply for external devices VSOUT. If VDVCC exceeds 1.5V (typically) and the XTO is settled, the digital control logic is active and sets the status bit STn to “1” and an interrupt is issued (TTn_IRQ). After the voltage on pin VSOUT exceeds 2.3V (typically) and the start-up time of the XTO is elapsed, the output clock on pin CLK is available. Because the enabling of pin CLK is asynchronous, the first clock cycle may be incomplete. N_RESET is set to high if VVSOUT exceeds 2.38V (typically) and the XTO is settled. Figure 7-2. Timing Pin Tn, Status Bit STn
Tn VThres_2 = 2.38V (typ) VSOUT VThres_1 = 2.3V (typ)
1.5V (typ) DVCC, AVCC
N_RESET
CLK TTn_IRQ STn (Status register)
IRQ OFF Mode IDLE Mode
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If the transceiver is in any active mode (IDLE, AUX, TX, RX, RX_Polling), an integrated debounce logic is active. If there is an event on pin Tn a debounce counter is set to 0 (T = 0) and started. The status is updated, an interrupt is issued and the debounce counter is stopped after reaching the counter value T = 8195 × TDCLK. An event on the same key input before reaching T = 8195 × TDCLK stops the debounce counter. An event on an other key input before reaching T = 8195 × T DCLK r esets and restarts the debounce counter. While the debounce counter is running, the bits VSOUT_EN and CLK_ON in control register 3 are set to “1”. The interrupt is deleted after reading the status register or executing the command Delete_IRQ. If pin Tn is not used, it can be left open because of an internal pull-up resistor (typically 50 kΩ). Figure 7-3. Timing Flow Pin Tn, Status Bit STn
IDLE Mode or AUX Mode or TX Mode or RX Polling Mode or RX Mode
Event on Pin Tn ? Y
N
T=0 Start debounce counter
Event on Pin Tn ? Y
N T = 8195 × T ? Y
N
Tn = STn ? Y Stop debounce counter
N
Pin Tn = 0 ? Y Stop debounce counter STn = 1 IRQ = 1
N
Stop debounce counter STn = 0 IRQ = 1
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7.6
Pin PWR_ON
To switch the transceiver from OFF to IDLE mode, pin PWR_ON must be set to “1” (minimum 0.8 × VVS2) for at least TPWR_ON (see Figure 7-4). The transceiver recognizes the positive edge, sets pin N_RESET to low, and switches on DVCC, AVCC and the power supply for external devices VSOUT. If VDVCC exceeds 1.5V (typically) and the XTO is settled, the digital control logic is active and sets the status bit Power_On to “1” and an interrupt is issued (TPWR_ON_IRQ_1). After the voltage on pin VSOUT exceeds 2.3V (typically) and the start-up time of the XTO is elapsed the output clock on pin CLK is available. Because the enabling of pin CLK is asynchronous, the first clock cycle may be incomplete. N_RESET is set to high if VVSOUT exceeds 2.38V (typically) and the XTO is settled. If the transceiver is in any active mode (IDLE, AUX, RX, RX_Polling, TX), a positive edge on pin PWR_ON sets Power_On to “1” (after TPWR_ON_IRQ_2). The state transition Power_On 0 →1 generates an interrupt. If Power_On is still “1” during the positive edge on pin PWR_ON no interrupt is issued. Power_On and the interrupt are deleted after reading the status register. During Power_On = 1, the bits VSOUT_EN and CLK_ON in control register 3 are set to “1”.
Note: It is not possible to set the transceiver to OFF mode by setting pin PWR_ON to “0”. If pin PWR_ON is not used, it must be connected to GND.
Figure 7-4.
Timing Pin PWR_ON, Status Bit Power_On
TPWR_ON > TPWR_ON_IRQ_1 TPWR_ON > TPWR_ON_IRQ_2
PWR_ON VThres_2 = 2.38V (typ) VSOUT VThres_1 = 2.V (typ) DVCC, AVCC 1.5V (typ)
N_RESET
CLK TPWR_ON_IRQ_1 Power_ON (Status register) TPWR_ON_IRQ_2
IRQ OFF Mode IDLE Mode IDLE, AUX, RX, RX Polling, TX Mode
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7.7 Low Battery Indicator
The status bit Low_Batt is set to “1” if the voltage VVSOUT on pin VSOUT drops below 2.38V (typically). Low_Batt is set to “0” if VVSOUT exceeds VThres_2 and the status register is read via the 4-wire serial interface (see Figure 5-3 on page 34). Figure 7-5. Timing Status Bit Low_Batt
IDLE, AUX, TX, RX or RX Polling Mode
VVSOUT < 2.38V (typ) ? Y
N
Low_Batt = 1
Read Status Register
7.8
Pin VAUX
To switch the transceiver from OFF to AUX mode, the voltage VVAUX on pin VAUX must exceed 3.5V (typically) (see Figure 7-6 on page 48). If VVAUX exceeds 2V (typically) pin N_RESET is set to low, and DVCC and the power supply for external devices VSOUT are switched on. If VVAUX exceeds 3.5V (typically) the status bit P_On_Aux is set to “1” and an interrupt is issued. After the voltage on pin VSOUT exceeds 2.3V (typically) and the start-up time of the XTO is elapsed, the output clock on pin CLK is available. Because the enabling of pin CLK is asynchronous, the first clock cycle may be incomplete. N_RESET is set to high if VVSOUT exceeds 2.38V (typically) and the XTO is settled. If the transceiver is in any active mode (IDLE, TX, RX, RX_Polling), a positive edge on pin VAUX and VVAUX > VS1 + 0.5V sets P_On_Aux to “1”. The state transition P_On_Aux 0 →1 generates an interrupt. If P_On_Aux is still “1” during the positive edge on pin VAUX no interrupt is issued. P_On_Aux and the interrupt are deleted after reading the status register.
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Figure 7-6.
Timing Pin VAUX, Status Bit P_On_Aux
3.5V (typ) 2.0V (typ) VVAUX > VS1 + 0.5V (typ) VVAUX > VS1 + 0.5V (typ)
VAUX
VSOUT
VThres_2 = 2.38V (typ) VThres_1 = 2.3V (typ)
DVCC
N_RESET
CLK
P_ON_AUX (Status register)
IRQ OFF Mode AUX Mode IDLE, TX, RX, RX polling Mode
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8. Transceiver Configuration
The configuration of the transceiver takes place via a 4-wire serial interface (CS, SCK, SDI_TMDI, SDO_TMDO) and is organized in 8-bit units. The configuration is initiated with an 8-bit command. While shifting the command into pin SDI_TMDI, the number of bytes in the TX/RX data buffer are available on pin SDO_TMDO. The read and write commands are followed by one or more 8-bit data units. Each 8-bit data transmission begins with the MSB. The serial interface is in the reset state if the level on pin CS = Low.
8.1
Command: Read TX/RX Data Buffer
During a RX operation, the user can read the received bytes in the TX/RX data buffer successively.
Figure 8-1.
Read TX/RX Data Buffer
MSB LSB MSB
X RX Data Byte 1
LSB
MSB
X RX Data Byte 1
LSB
SDI_TMDI SDO_TMDO SCK CS
Command: Read TX/RX Data Buffer No. Bytes in the TX/RX Data Buffer
8.2
Command: Write TX/RX Data Buffer
During a TX operation the user can write the bytes in the TX/RX data buffer successively. An echo of the command and the TX data bytes are provided for the microcontroller on pin SDO_TMDO.
Figure 8-2.
Write TX/RX Data Buffer
MSB LSB MSB
TX Data Byte 1 Write TX/RX Data Buffer
LSB
MSB
TX Data Byte 2 TX Data Byte 1
LSB
SDI_TMDI SDO_TMDO SCK CS
Command: Write TX/RX Data Buffer No. Bytes in the TX/RX Data Buffer
8.3
Command: Read Control/Status Register
The control and status registers can be read individually or successively.
Figure 8-3.
Read Control/Status Register
MSB LSB MSB LSB MSB LSB
SDI_TMDI SDO_TMDO SCK CS
Command: Read C/S Register X No. Bytes in the TX/RX Data Buffer
Command: Read C/S Register Y Data C/S Register X
Command: Read C/S Register Z Data C/S Register Y
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8.4
Command: Write Control Register
The control registers can be written individually or successively. An echo of the command and the data bytes are provided for the microcontroller on pin SDO_TMDO.
Figure 8-4.
Write Control Register
MSB LSB MSB
Data Control Register X Write Control Register X
LSB
MSB
LSB
SDI_TMDI SDO_TMDO SCK CS
Command: Write Control Register X No. Bytes in the TX/RX Data Buffer
Command: Write Control Register Y Data Control Register X
8.5
Command: OFF Command
If AVCC_EN in control register 1 is “0”, the input level on pin PWR_ON is low and on the key inputs Tn is high, then the OFF command sets the transceiver in the OFF mode. Figure 8-5. OFF Command
MSB LSB
SDI_TMDI SDO_TMDO SCK CS
Command: OFF Command No. Bytes in the TX/RX Data Buffer
8.6
Command: Delete IRQ
The delete IRQ command sets pin IRQ to low. Figure 8-6. Delete IRQ
MSB LSB
Command: Delete IRQ No. Bytes in the TX/RX Data Buffer
SDI_TMDI SDO_TMDO SCK CS
8.7
Command Structure
The three most significant bits of the command (bit 5 to bit 7) indicate the command type. Bit 0 to bit 4 describe the target address when reading or writing a control or status register. In all other commands bit 0 to bit 4 have no effect and should be set to “0” for compatibility with future products.
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Table 8-1.
Command Read TX/RX data buffer Write TX/RX data buffer Read control/status register Write control register OFF command Delete IRQ Not used Not used
Command Structure
MSB Bit 7 0 0 0 0 1 1 1 1 Bit 6 0 0 1 1 0 0 1 1 Bit 5 0 1 0 1 0 1 0 1 Bit 4 x x A4 A4 X X X X Bit 3 x x A3 A3 X X X X Bit 2 x x A2 A2 X X X X Bit 1 x x A1 A1 X X X X LSB Bit 0 x x A0 A0 X X X X
8.8
4-wire Serial Interface
The 4-wire serial interface consists of the Chip Select (CS), the Serial Clock (SCK), the Serial Data Input (SDI_TMDI) and the Serial Data Output (SDO_TMDO). Data is transmitted/received bit by bit in synchronization with the serial clock.
Note: If the output level on pin N_RESET is low, no data communication with the microcontroller is possible.
When CS is low and the transparent mode is inactive (T_MODE = 0), SDO_TMDO is in a high impedance state. When CS is low and the transparent mode is active (T_MODE = 1), the RX data stream is available on pin SDO_TMDO. Figure 8-7. Serial Timing
TCS_disable CS TSCK_setup1 SCK X TSetup SDI_TMDI X THold
TCS_setup
TCycle
TSCK_setup2 TSCK_hold X
MSB TOut_enable
X TOut_delay
MSB-1
X
X TOut_disable
SDO_TMDO
MSB X can be either ViL or ViH
MSB-1
LSB
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9. Operation Modes
9.1 RX Operation
The transceiver is set to RX operation with the bits OPM0 and OPM1 in control register 1.
Table 9-1.
1 1
Control Register 1
OPM1 OPM0 0 1 Function RX polling mode RX mode
The transceiver is designed to consume less than 1 mA in RX operation while remaining sensitive to signals from a corresponding transmitter. This is achieved via the polling circuit. This circuit enables the signal path periodically for a short time. During this time the bit-check logic verifies the presence of a valid transmitter signal. Only if a valid signal is detected does the transceiver remain active and transfer the data to the connected microcontroller. This transfer takes place either via the TX/RX data buffer or via the pin SDO_TMDO. When there is no valid signal present, the transceiver is in sleep mode most of the time, resulting in low current consumption. This condition is called RX polling mode. A connected microcontroller can be disabled during this time. All relevant parameters of the polling logic can be configured by the connected microcontroller. This flexibility enables the user to meet the specifications in terms of current consumption, system response time, data rate, etc. In RX mode the RF transceiver is enabled permanently and the bit-check logic verifies the presence of a valid transmitter signal. When a valid signal is detected the transceiver transfers the data to the connected microcontroller. This transfer take place either via the TX/RX data buffer or via the pin SDO_TMDO. 9.1.1 RX Polling Mode When the transceiver is in RX polling mode it stays in a continuous cycle of three different modes. In sleep mode the RF transceiver is disabled for the time period TSleep while consuming low current of IS = IIDLE_X. During the start-up period, TStartup_PLL and TStartup_Sig_Proc, all signal processing circuits are enabled and settled. In the following bit-check mode, the incoming data stream is analyzed bit by bit to see if it is a valid transmitter signal. If no valid signal is present, the transceiver is set back to sleep mode after the period TBit-check. This period varies check by check as it is a statistical process. An average value for TBit-check is given in the electrical characteristics. During TStartup_PLL the current consumption is IS = IStartup_PLL_X. During TStartup_Sig_Proc and TBit-check the current consumption is IS = IRX_X. The condition of the transceiver is indicated on pin RX_ACTIVE (see Figure 9-1 on page 54 and Figure 9-2 on page 55). The average current consumption in RX polling mode IP is different in 1 Li battery application (3V), 2 Li battery application (6V) or Base-station Application (5V). To calculate IP the index X must be replaced by VS1,VS2 in 1 Li battery application (3V), VS2 in 2 Li battery application (6V) or VS2,VAUX in Base-station Application (5V) (see section “Electrical Characteristics: General” on page 67).
I IDLE_X × T Sleep + I Startup_PLL_X × T Startup_PLL + I RX_X × ( T Startup_Sig_Proc + T Bitcheck ) I P = -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------T Sleep + T Startup_PLL + T Startup_Sig_Proc + T Bit_check
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To save current it is recommended that CLK and VVSOUT be disabled during RX polling mode. IP does not include the current of the Microcontroller_Interface, IVSINT, or the current of an external device connected to pin VSOUT (for example, microcontroller). If CLK and/or VSOUT is enabled during RX polling mode the current consumption is calculated as follows:
I S_Poll = I P + I VSINT + I EXT
During TSleep, TStartup_PLL and TStartup_Sig_Proc, the transceiver is not sensitive to a transmitter signal. To guarantee the reception of a transmitted command, the transmitter must start the telegram with an adequate preburst. The required length of the preburst, TPreburst, depends on the polling parameters TSleep, TStartup_PLL, TStartup_Sig_Proc and TBit-check. Thus, TBit-check depends on the actual bit rate and the number of bits (NBit-check) to be tested.
T Preburst ≥ T Sleep + T Startup_PLL + T Startup_Sig_Proc + T Bit_check
9.1.2
Sleep Mode The length of period TSleep is defined by the 5-bit word sleep in control register 4, the extension factor XSleep defined by the bit XSleep in control register 4, and the basic clock cycle TDCLK. It is calculated to be:
T Sleep = Sleep × 1024 × T DCLK × X Sleep
In US and European applications, the maximum value of TSleep is about 38 ms if XSleep is set to 1 (which is done by setting the bit XSleep in control register 4 to “0”). The time resolution is about 1.2 ms in that case. The sleep time can be extended to about 300 ms by setting XSleep to 8 (which is done by setting XSleep in control register 4 to “1”), the time resolution is then about 9.6 ms. 9.1.3 Start-up Mode During TStartup_PLL the PLL is enabled and starts up. If the PLL is locked, the signal processing circuit starts up (TStartup_Sig_Proc). After the start-up time all circuits are in stable condition and ready to receive.
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Figure 9-1.
Flow Chart Polling Mode/RX Mode (T_MODE = 0, Transparent Mode Inactive)
Start RX Polling Mode
Sleep mode: All circuits for analog signal processing are disabled. Only XTO and Polling logic is enabled. Output level on pin RX_ACTIVE ⇒ Low; IS = IIDLE_X TSleep = Sleep × 1024 × TDCLK × XSleep
Sleep: XSleep: TDCLK:
Defined by bits Sleep 0 to Sleep 4 in Control Register 4 Defined by bit XSleep in Control register 4 Basic clock cycle
Start RX Mode
Start-up mode: Start-up PLL: The PLL is enabled and locked. Output level on pin RX_ACTIVE ⇒ High; IS = IStartup_PLL_X; IStartup_PLL TStartup_PLL: 798.5 × TDCLK (typ)
TStartup_Sig_Proc: Start-up signal processing: The signal processing circuit are enabled. Output level on pin RX_ACTIVE ⇒ High; IS = IRX_X; TStartup_Sig_proc
882 × TDCLK 498 × TDCLK 306 × TDCLK 210 × TDCLK
(BR_Range 0) (BR_Range 1) (BR_Range 2) (BR_Range 3)
Is defined by the selected baud rate range and TDCLK .The baud-rate range is defined by bit Baud 0 and Baud 1 in Control Register 6. Bit-check mode: The incomming data stream is analyzed. If the timing indicates a valid transmitter signal, the control bits VSOUT_EN, CLK_ON and OPM0 are set to 1 and the transceiver is set to receiving mode. Otherwise it is set to Sleep mode or to Start_up mode. Output level on pin RX_ACTIVE ⇒ High IS = IRX_X; TBit-check TBit-check: NO Bit check OK ? YES OPM0 = 1 ? YES NO P_MODE = 0 ? YES Set IRQ NO Set VSOUT_EN = 1 Set CLK_ON = 1 Set OPM0 = 1 Depends on the result of the bit check. If the bit check is ok, TBit-check depends on the number of bits to be checked (NBit-check) and on the utilized data rate. If the bit check fails, the average time period for that check despends on the selected bit-rate range and on TXDCLK. The bit-rate range is defined by bit Baud 0 and Baud 1 in Control Register 6.
NO
TSLEEP = 0 ? YES
Receiving mode: The incomming data stream is passed via the TX/RX Data Buffer to the connected microcontroller. If an bit error occurs the transceiver is set back to Start-up mode. Output level on pin RX_ACTIVE ⇒ High IS = IRX_X Start bit detected ? YES NO
If the transceiver detects a bit errror after a successful bit check and before the start bit is detected pin IRQ will be set to high (only if P_MODE = 0) and the transceiver is set back to start-up mode.
RX data stream is written into the TX/RX Data Buffer
Bit error ? YES
NO
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Figure 9-2. Flow Chart Polling Mode/RX Mode (T_MODE = 1, Transparent Mode Active)
Start RX Polling Mode
Sleep mode: All circuits for analog signal processing are disabled. Only XTO and Polling logic is enabled. Output level on pin RX_ACTIVE ⇒ Low; IS = IIDLE_X TSleep = Sleep × 1024 × TDCLK × XSleep
Sleep: XSleep: TDCLK:
Defined by bits Sleep 0 to Sleep 4 in Control Register 4 Defined by bit XSleep in Control register 4 Basic clock cycle
Start RX Mode
Start-up mode: Start-up PLL: The PLL is enabled and locked. Output level on pin RX_ACTIVE ⇒ High; IS = IStartup_PLL_X; IStartup_PLL TStartup_PLL: 798.5 × TDCLK (typ)
Start-up signal processing: The signal processing circuit are enabled. Output level on pin RX_ACTIVE ⇒ High; IS = IRX_X; TStartup_Sig_proc
TStartup_Sig_Proc:
882 × TDCLK 498 × TDCLK 306 × TDCLK 210 × TDCLK
(BR_Range 0) (BR_Range 1) (BR_Range 2) (BR_Range 3)
Is defined by the selected baud rate range and TDCLK .The baud-rate range is defined by bit Baud 0 and Baud 1 in Control Register 6. Bit-check mode: The incomming data stream is analyzed. If the timing indicates a valid transmitter signal, the control bits VSOUT_EN, CLK_ON and OPM0 are set to 1 and the transceiver is set to receiving mode. Otherwise the transceiver is set to Sleep mode (if OPM0 = 0 and TSleep > 0) or stays in Bit-check mode. Output level on pin RX_ACTIVE ⇒ High IS = IRX_X; TBit-check NO Bit check OK ? YES OPM0 = 1 ? YES Set VSOUT_EN = 1 Set CLK_ON = 1 Set OPM0 = 1 NO TSLEEP = 0 ? YES NO If the bit check fails, the average time period for that check despends on the selected bit-rate range and on TXDCLK. The bit-rate range is defined by bit Baud 0 and Baud 1 in Control Register 6.
TBit-check:
Depends on the result of the bit check. If the bit check is ok, TBit-check depends on the number of bits to be checked (NBit-check) and on the utilized data rate.
Receiving mode: The incomming data stream is passed via PIN SDO_TMDO to the connected microcontroller. If an bit error occurs the transceiver is not set back to Start-up mode. Output level on pin RX_ACTIVE ⇒ High IS = IRX_X
Level on pin CS = Low ? YES RX data stream available on pin SDO_TMDO
NO
If in FSK mode the datastream is interrupted the FSK-Demodulator-PLL tends to lock out and is further not able to lock in, even there is a valid data stream available. In this case the transceiver must be set back to IDLE mode.
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9.1.4
Bit-check Mode In bit-check mode the incoming data stream is examined to distinguish between a valid signal from a corresponding transmitter and signals due to noise. This is done by subsequent time frame checks where the distance between 2 signal edges are continuously compared to a programmable time window. The maximum count of this edge-to-edge test before the transceiver switches to receiving mode is also programmable. Configuration of the Bit Check Assuming a modulation scheme that contains 2 edges per bit, two time frame checks verify one bit. This is valid for Manchester, Bi-phase and most other modulation schemes. The maximum count of bits to be checked can be set to 0, 3, 6 or 9 bits via the variable NBit-check in control register 5. This implies 0, 6, 12 and 18 edge-to-edge checks, respectively. If NBit-check is set to a higher value, the transceiver is less likely to switch to receiving mode due to noise. In the presence of a valid transmitter signal, the bit check takes less time if NBit-check is set to a lower value. In RX polling mode, the bit-check time is not dependent on NBit-check if no valid signal is present. Figure 9-3 shows an example where 3 bits are tested successfully. Timing Diagram for Complete Successful Bit Check (Number of Checked Bits: 3)
9.1.5
Figure 9-3.
RX_ACTIVE
Bit check ok Bit check 1/2 Bit Demod_Out TStartup_Sig_Proc Start-up mode TBit-check Bit check mode Receiving mode 1/2 Bit 1/2 Bit 1/2 Bit 1/2 Bit 1/2 Bit
As seen in Figure 9-4, the time window for the bit check is defined by two separate time limits. If the edge-to-edge time tee is in between the lower bit-check limit TLim_min and the upper bit-check limit TLim_max, the check will be continued. If tee is smaller than limit TLim_min or exceeds TLim_max, the bit check will be terminated and the transceiver switches to sleep mode. Figure 9-4. Valid Time Window for Bit Check
1/fSig Demod_Out
tee TLim_min TLim_max
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For the best noise immunity, use of a low span between TLim_min and TLim_max is recommended. This is achieved using a fixed frequency at a 50% duty cycle for the transmitter preburst: a “11111...” or a “10101...” sequence in Manchester or Bi-phase is a good choice. A good compromise between sensitivity and susceptibility to noise regarding the expected edge-to-edge time, tee, is a time window of ±38%; to get the maximum sensitivity the time window should be ±50% and then NBit-check ≥ 6. Using preburst patterns that contain various edge-to-edge time periods, the bit-check limits must be programmed according to the required span. The bit-check limits are determined by means of the formula below: TLim_min = Lim_min × TXDCLK TLim_max = (Lim_max -1) × TXDCLK Lim_min is defined by the bits Lim_min 0 to Lim_min 5 in control register 5. Lim_max is defined by the bits Lim_max 0 to Lim_max 5 in control register 6. Using the above formulas, Lim_min and Lim_max can be determined according to the required TLim_min, TLim_max and TXDCLK. The time resolution defining TLim_min and TLim_max is TXDCLK. The minimum edge-to-edge time tee is defined in the section “Receiving Mode” on page 59. The lower limit should be set to Lim_min ≥ 1 0. The maximum value of the upper limit is Lim_max = 63. Figure 9-5, Figure 9-6, and Figure 9-7 illustrate the bit check for the bit-check limits Lim_min = 14 and Lim_max = 24. The signal processing circuits are enabled during TStartup_PLL and TStartup_Sig_Proc. The output of the ASK/FSK demodulator (Demod_Out) is undefined during that period. When the bit check becomes active, the bit-check counter is clocked with the cycle TXDCLK. Figure 9-5 shows how the bit check proceeds if the bit-check counter value CV_Lim is within the limits defined by Lim_min and Lim_max at the occurrence of a signal edge. In Figure 9-6 on page 58 the bit check fails because the value CV_Lim is lower than the limit Lim_min. The bit check also fails if CV_Lim reaches Lim_max. This is illustrated in Figure 9-7 on page 58. Figure 9-5. Timing Diagram During Bit Check
(Lim_min = 14, Lim_max = 24) RX_ACTIVE Bit check ok Bit check 1/2 Bit Demod_Out 1/2 Bit 1/2 Bit Bit check ok
Bit-check counter
0
1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 9 101112131415161718 1 2 3 4 5 6 7 8 9 10 111213 1415 1 2 3 4 5 6 7
TXDCLK TStartup_Sig_Proc Start-up mode TBit-check Bit check mode
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Figure 9-6.
Timing Diagram for Failed Bit Check (Condition CV_Lim < Lim_min)
(Lim_min = 14, Lim_max = 24)
RX_ACTIVE Bit check failed (CV_Lim < Lim_min) Bit check 1/2 Bit Demod_Out
Bit-check counter
0
1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 9 101112
0
TStartup_Sig_Proc Start-up mode
TBit_check Bit check mode
TSleep Sleep mode
Figure 9-7.
Timing Diagram for Failed Bit Check (Condition: CV_Lim ≥ Lim_max)
(Lim_min = 14, Lim_max = 24)
RX_ACTIVE Bit check failed (CV_Lim < Lim_min) Bit check 1/2 Bit Demod_Out
Bit-check counter
0
1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 9 10111213 1415 16 171819 20 21222324
0
TStartup_Sig_Proc Start-up mode
TBit_check Bit check mode
TSleep Sleep mode
9.1.6
Duration of the Bit Check If no transmitter is present during the bit check, the output of the ASK/FSK demodulator delivers random signals. The bit check is a statistical process and TBit-check varies for each check. Therefore, an average value for TBit-check is given in the electrical characteristics. TBit-check depends on the selected bit-rate range and on TXDCLK. A higher bit-rate range causes a lower value for TBit-check, resulting in a lower current consumption in RX polling mode.
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In the presence of a valid transmitter signal, TBit-check is dependent on the frequency of that signal, fSignal, and the count of the bits, NBit-check. A higher value for NBit-check therefore results in a longer period for TBit-check, requiring a higher value for the transmitter pre-burst, TPreburst. 9.1.7 Receiving Mode If the bit check was successful for all bits specified by NBit-check, the transceiver switches to receiving mode. To activate a connected microcontroller, the bits VSOUT_EN and CLK_ON in control register 3 are set to “1”. An interrupt is issued at pin IRQ if the control bits T_MODE = 0 and P_MODE = 0. If the transparent mode is active (T_MODE = 1) and the level on pin CS is low (no data transfer via the serial interface), the RX data stream is available on pin SDO_TMDO (Figure 9-8). Figure 9-8. Receiving Mode (TMODE = 1)
Preburst Bit check ok Start bit Byte 1 Byte 2 Byte 3
Demod_Out
'0' '0' '0' '0' '0' '0' '0' '0' '0' '1' '0' '1' '0' '0' '0' '0' '0' '1' '1' '1' '1' '0' '0' '1' '1' '0' '1' '0' '1' '1' '0' '0'
SDO_TMDO Bit-check mode Receiving mode
If the transparent mode is inactive (T_MODE = 0), the received data stream is buffered in the TX/RX data buffer (see Figure 9-9 on page 60). The TX/RX data buffer is only usable for Manchester and Bi-phase coded signals. It is always possible to transfer the data from the data buffer via the 4-wire serial interface to a microcontroller (see Figure 8-1 on page 49). Buffering of the data stream: After a successful bit check, the transceiver switches from bit-check mode to receiving mode. In receiving mode the TX/RX data buffer control logic is active and examines the incoming data stream. This is done, as in the bit check, by subsequent time frame checks where the distance between two edges is continuously compared to a programmable time window as illustrated in Figure 9-9 on page 60. Only two time differences between two edges in Manchester and Bi-phase coded signals are valid (T and 2T). The limits for T are the same as used for the bit check. They can be programmed in control register 5 and 6 (Lim_min, Lim_max). The limits for 2T are calculated as follows: Lower limit of 2T:
Lim_min_2T = ( Lim_min + Lim_max ) – ( Lim_max – Lim_min ) /2 T Lim_min_2T = Lim_min_2T × T XDCLK
Upper limit of 2T:
Lim_max_2T = ( Lim_min + Lim_max ) + ( Lim_max – Lim_min ) /2 T Lim_max_2T = ( Lim_max_2T - 1 ) × T XDCLK
If the result of Lim_min_2T or Lim_max_2T is not an integer value, it will be rounded up.
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If the TX/RX data buffer control logic detects the start bit, the data stream is written in the TX/RX data buffer byte by byte. The start bit is part of the first data byte and must be different from the bits of the preburst. If the preburst consists of a sequence of “00000...”, the start bit must be a “1”. If the preburst consists of a sequence of “11111...”, the start bit must be a “0”. If the data stream consists of more than 16 bytes, a buffer overflow occurs and the TX/RX data buffer control logic overwrites the bytes already stored in the TX/RX data buffer. Therefore, it is very important to ensure that the data is read in time so that no buffer overflow occurs (see Figure 8-1 on page 49). There is a counter that indicates the number of received bytes in the TX/RX data buffer (see section “Transceiver Configuration” on page 49). If a byte is transferred to the microcontroller, the counter is decremented; if a byte is received, the counter is incremented. The counter value is available via the 4-wire serial interface. An interrupt is issued if the counter (while counting up) reaches the value defined by the control bits IR0 and IR1 in control register 1. Figure 9-9. Receiving Mode (TMODE = 0)
Preburst Bit check ok T Start bit Byte 1 2T Byte 2 Byte 3
Demod_Out
'0' '0' '0' '0' '0' '0' '0' '0' '0' '1' '0' '1' '0' '0' '0' '0' '0' '1' '1' '1' '1' '0' '0' '1' '1' '0' '1' '0' '1' '1' '0' '0'
Bit-check mode
Receiving mode
TX/RX Data Buffer
Byte 16, Byte 32, ... Byte 15, Byte 31, ... Byte 14, Byte 30, ... Byte 13, Byte 29, ... Byte 12, Byte 28, ... Byte 11, Byte 27, ... Byte 10, Byte 26, ... Byte 9, Byte 25, ... Byte 8, Byte 24, ... Byte 7, Byte 23, ... Byte 6, Byte 22, ... Byte 5, Byte 21, ... Byte 4, Byte 20, ... Byte 3, Byte 19, ... 1 1 1 1 0 0 1 1 Byte 2, Byte 18, ... 1 0 1 0 0 0 0 0 Byte 1, Byte 17, ... MSB LSB
Readable via 4-wire serial interface
If the TX/RX data buffer control logic detects a bit error, an interrupt is issued and the transceiver is set back to the start-up mode (see Figure 9-1 on page 54, Figure 9-2 on page 55 and Figure 9-10 on page 61). Bit error:
Note:
a) tee < TLim_min or TLim_max < tee < TLim_min_2T or tee > TLim_max_2T b) Logical error (no edge detected in the bit center)
The byte consisting of the bit error will not be stored in the TX/RX data buffer. Thus, it is not available via the 4-wire serial interface.
Writing the control register 1, 4, 5 or 6 during receiving mode resets the TX/RX data buffer control logic and the counter which indicates the number of received bytes. If the bits OPM0 and OPM1 are still “1” after writing to a control register, the transceiver changes to the start-up mode (start-up signal processing).
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Figure 9-10. Bit Error (TMODE = 0)
Bit error Bit check ok
Demod_Out
Byte n-1
Byte n
Byte n+1
Preburst
Byte 1
Receiving mode
Start-up mode Bit-check mode
Receiving mode
Table 9-2.
Mode
RX Modulation Scheme
ASK/_NFSK T_MODE 0 0 0 1 1 0 1 0 1 1 RFIN fFSK_L → fFSK_H fFSK_H → fFSK_L fFSK_H fFSK_L fASK off → fASK on fASK on → fASK off fASK on fASK off Bit in TX/RX Data Buffer 1 0 Level on Pin SD0_TMDO X X 1 0 X X 1 0
– –
1 0
RX
– –
9.1.8
Recommended Lim_min and Lim_max for Maximum Sensitivity The sensitivity measurements in the section “Low-IF Receiver” in Table 3-3 on page 12 and Table 3-4 on page 12 have been done with the Lim_min and Lim_max values according to Table 9-3. These values are optimized for maximum sensitivity. Note that since these limits are optimized for sensitivity, the number of checked bits, NBit-check, has to be at least 6 to prevent the circuit from waking up to often in polling mode due to noise.
Table 9-3.
fRF (fXTAL)/ MHz
Recommended Lim_min and Lim_max Values for Different Bit Rates
1.0 Kbit/s BR_Range_0 XLim = 1 2.4 Kbit/s BR_Range_0 XLim = 0 5 Kbit/s BR_Range_1 XLim = 0 10 Kbit/s BR_Range_2 XLim = 0 20 Kbit/s BR_Range_3 XLim = 0 Lim_min = 11 (14 µs) Lim_max = 31 (38 µs) Lim_min = 11 (13 µs) Lim_max = 31 (34 µs) Lim_min = 11 (13 µs) Lim_max = 32 (37 µs) Lim_min = 11 (13 µs) Lim_max = 32 (37 µs) Lim_min = 11 (12 µs) Lim_max = 32 (35 µs)
315 Lim_min = 13 (261 µs) Lim_min = 12 (121 µs) Lim_min = 11 (55 µs) Lim_min = 11 (28 µs) (12.73193) Lim_max = 38 (744 µs) Lim_max = 34 (332 µs) Lim_max = 32 (156 µs) Lim_max = 32 (78 µs) 345 Lim_min = 13 (239 µs) Lim_min = 12 (110 µs) Lim_min = 11 (50 µs) Lim_min = 11 (25 µs) (13.94447) Lim_max = 38 (679 µs) Lim_max = 34 (303 µs) Lim_max = 32 (142 µs) Lim_max = 32 (71 µs) 433.92 Lim_min = 13 (251 µs) Lim_min = 12 (116 µs) Lim_min = 11 (53 µs) Lim_min = 11 (27 µs) (13.25311) Lim_max = 38 (715 µs) Lim_max = 34 (319 µs) Lim_max = 32 (150 µs) Lim_max = 32 (75 µs) 868.3 Lim_min = 13 (248 µs) Lim_min = 12 (115 µs) Lim_min = 11 (52 µs) Lim_min = 11 (26 µs) (13.41191) Lim_max = 38 (706 µs) Lim_max = 34 (315 µs) Lim_max = 32 (148 µs) Lim_max = 32 (74 µs) 915 Lim_min = 13 (235 µs) Lim_min = 12 (109 µs) Lim_min = 11 (50 µs) Lim_min = 11 (25 µs) (14.13324) Lim_max = 38 (670 µs) Lim_max = 34 (299 µs) Lim_max = 32 (140 µs) Lim_max = 32 (70 µs)
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9.2
TX Operation
The transceiver is set to TX operation by using the bits OPM0 and OPM1 in the control register 1.
Table 9-4.
Control Register 1
OPM1 0 OPM0 1 Function TX mode
Before activating TX mode, the TX parameters (bit rate, modulation scheme, etc.) must be selected as illustrated in Figure 9-11 on page 63. The bit rate depends on Baud 0 and Baud 1 in control register 6, Lim_min0 to Lim_min5 in control register 5 and XLIM in control register 4 (see section “Control Register” on page 38). The modulation is selected with ASK/_NFSK in control register 4. The FSK frequency deviation is fixed to about ±16 kHz. If P_Mode is set to “1”, the Manchester modulator is disabled and pattern mode is active (NRZ, see Table 9-5 on page 65). After the transceiver is set to TX mode, the start-up mode is active and the PLL is enabled. If the PLL is locked, the TX mode is active. If the transceiver is in start-up or TX mode, the TX/RX data buffer can be loaded via the 4-wire serial interface. After the first byte is in the buffer and the TX mode is active, the transceiver starts transmitting automatically (beginning with the MSB). While transmitting it is always possible to load new data in the TX/RX data buffer. To prevent a buffer overflow or interruptions during transmitting, the user must ensure that data is loaded at the same speed as it is transmitted. There is a counter that indicates the number of bytes to be transmitted (see section “Transceiver Configuration” on page 49). If a byte is loaded, the counter is incremented, if a byte is transmitted, the counter is decremented. The counter value is available via the 4-wire serial interface. An IRQ is issued if the counter (while counting down) reaches the value defined by the control bits IR0 and IR1 in control register 1.
Note: Writing to the control register 1, 4, 5 or 6 during TX mode resets the TX/RX data buffer and the counter which indicates the number of bytes to be transmitted.
If T_Mode in control register 1 is set to “1”, the transceiver is in TX transparent mode. In this mode the TX/RX data buffer is disabled and the TX data stream must be applied on pin SDI_TMDI. Figure 9-11 on page 63 illustrates the flow chart of the TX transparent mode.
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Figure 9-11. TX Operation (T_MODE = 0)
Write Control Register 6 Baud1, BAUD0: Lim_max0 to Lim_max5: Write Control Register 5 Lim_min0 to Lim_min5: Bit_ck0, Bit_ck1: Write Control Register 4 XLim: ASK/_NFSK: Sleep0 to Sleep4: XSleep: Write Control Register 3 FR7, FR8: VSOUT_EN: CLK_ON: Write Control Register 2 FR0 to FR6: P_mode:
Select baud rate range Don't care
Select the baud rate Don't care
Select the bit rate Select modulation Don't care Don't care
Adjust fRF Set VSOUT_EN = 1 Don't care
Idle Mode
Adjust fRF Enable or disable the Manchester modulator
Write Control Register 1 IR1, IR0: AVCC_EN: FS: OPM1, OPM0: T_mode:
Select an event which activates an interrupt Don't care Select operation frequency Set OPM1 = 0 and OPM0 = 1 Set T_mode = 0
Write TX/RX Data Buffer (max. 16 byte)
Start-up Mode (TX) TStartup = 331.5 × TDCLK
N
Pin IRQ = 1 ? Y
N
TX more Data Bytes ? Y
TX Mode
Command: Delete_IRQ
Write TX/RX Data Buffer (max. 16 - number of bytes still in the TX/RX Data Buffer)
N
Pin IRQ = 1 ? Y
Write Control Register 1 OPM1, OPM0:
Set IDLE
Idle Mode
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Figure 9-12. TX Transparent Mode (T_MODE = 1)
Write Control Register 4 XLim: ASK/_NFSK: Sleep0 to Sleep4: XSleep: Write Control Register 3 FR7, FR8: VSOUT_EN: CLK_ON: Write Control Register 2 FR0 to FR6: P_mode: Write Control Register 1 IR1, IR0: AVCC_EN: FS: OPM1, OPM0: T_mode:
Don't care Select modulation Don't care Don't care
Adjust fRF Set VSOUT_EN = 1 Don't care
Idle Mode
Adjust fRF Don't care
Don't care Don't care Select operation frequency Set OPM1 = 0 and OPM0 = 1 Set T_mode = 1
Start-up Mode (TX) TStartup = 331.5 × TDCLK
Apply TX Data on Pin SDI_TMDI
TX Mode
Write Control Register 1 OPM1, OPM0:
Set IDLE (OPM1 = 0, OPM0 = 1
Idle Mode
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Table 9-5.
Mode
TX Modulation Schemes
ASK/_NFSK P_Mode 0 0 1 1 X X 0 0 1 1 X X T_Mode 0 0 0 0 1 1 0 0 0 0 1 1 Bit in TX/RX Data Buffer 1 0 1 0 X X 1 0 1 0 X X Level on Pin SDI_TMDI X X X X 1 0 X X X X 1 0 RFOUT fFSK_L → fFSK_H fFSK_H → fFSK_L fFSK_H fFSK_L fFSK_H fFSK_L fASK off → fASK on fASK on → fASK off fASK on fASK off fASK on fASK off
0
TX
1
9.3
Interrupts
Via pin IRQ, the transceiver signals different operating conditions to a connected microcontroller. If a specific operating condition occurs, pin IRQ is set to high. If an interrupt occurs, it is recommended to delete the interrupt immediately by reading the status register, so that a further potential interrupt doesn’t get lost. If the Interrupt pin doesn’t switch to low by reading the status register, the interrupt was triggered by the RX/TX data buffer. In this case read or write the RX/TX data buffer according to Table 9-6. Table 9-6. Interrupt Handling
Operations Which Set Pin IRQ to Low Level Operating Conditions Which Set Pin IRQ to High Level Events in Status Register State transition of status bit STn (0 → 1; 1 → 0) Appearance of status bit Power_On (0 → 1) Appearance of status bit P_On_Aux (0 → 1) Events During TX Operation (T_MODE = 0) 4, 8 or 12 Bytes are in the TX data buffer or the TX data buffer is empty (depends on IR0 and IR1 in control register 1). Events During RX Operation (T_MODE = 0) 4, 8 or 12 received bytes are in the RX data buffer or a Read RX data buffer(1) or receiving error is occurred (depends on IR0 and IR1 Write control register 1 or in control register 1). Write control register 4 or Write control register 5 or Write control register 6 or Successful bit check (P_MODE = 0) Command delete IRQ Note: 1. During reading of the RX/TX buffer, no IRQ is issued, due to the received bytes or a receiving error. Write TX data buffer or Write control register 1 or Write control register 4 or Write control register 5 or Write control register 6 or Command delete IRQ Read status register or Command Delete IRQ
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10. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Junction temperature Storage temperature Ambient temperature Supply voltage VS2 Supply voltage VS1 Supply voltage VAUX Supply voltage VSINT ESD (Human Body Model ESD S 5.1) every pin ESD (Machine Model JEDEC A115A) every pin ESD (Field Induced Charge Device Model ESD STM 5.3.1–1999) every pin Maximum input level, input matched to 50 Ω Symbol Tj Tstg Tamb VMaxVS2 VMaxVS1 VMaxVAUX VMaxVSINT HBM MM Min. Max. 150 +125 +85 +7.2 +4 +7.2 +5.5 + 1.5 +200 Unit °C °C °C V V V V kV V
–55 –40 –0.3 –0.3 –0.3 –0.3 –1.5
–200
FCDM Pin_max
–1
+1 10
kV dBm
11. Thermal Resistance
Parameters Junction ambient Symbol RthJA Value 25 Unit K/W
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12. Electrical Characteristics: General
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 1 RX_TX_IDLE Mode ATA5423 V433_N868 = AVCC ATA5425 V433_N868 = AVCC 1.1 RF operating frequency range ATA5428 V433_N868 = AVCC ATA5428 V433_N868 = GND ATA5429 V433_N868 = GND VVS1 = VVS2 = 3V, VVSINT = 0V (1 battery) and VVS2 = 6V (2 battery) OFF mode is not available if VVS2 = VVAUX = 5V VVSINT = 0V (base station) VVSOUT disabled, XTO running VVS1 = VVS2 = 3V (1 battery) VVS2 = 6V (2 battery) VVS2 = VVAUX = 5V (base station) From OFF mode to IDLE mode including reset and XTO start-up (see Figure 7-4 on page 46) XTAL: Cm = 5 fF, C0 = 1.8 pF, Rm =15Ω 4, 10 4, 10 4, 10 4, 10 4, 10 fRF fRF fRF fRF fRF 312.5 342.5 431.5 862 912.5 317.5 347.5 436.5 872 917.5 MHz MHz MHz MHz MHz A A A A A Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type*
1.2
Supply current OFF mode
IS_OFF
< 10
nA
A
IS_IDLE IS_IDLE IS_IDLE
220
µA
B
1.3
Supply current IDLE mode
310 310
µA µA
B B
1.4
System start-up time
TPWR_ON_IRQ_1
0.3
ms
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions From IDLE mode to receiving mode NBit-check = 3 Bit rate = 20 Kbit/s, BR_Range_3 (see Figure 9-1 on page 54, Figure 9-2 on page 55 and Figure 9-3 on page 56) From IDLE mode to TX mode (see Figure 9-11 on page 63) Pin(1) Symbol Min. Typ. Max. Unit Type*
1.5
RX start-up time
TStartup_PLL + TStartup_Sig_Proc + TBit-chek
1.39
ms
A
1.6
TX start-up time
TStartup
0.4
ms
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 2 Receiver/RX Mode fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868 MHz fRF = 915 MHz 2.2 Supply current RX polling mode TSleep = 49.45 ms XSLEEP = 8, Sleep = 5 Bit rate = 20 Kbit/s FSK, VVSOUT disabled FSK deviation fDEV = ±16 kHz limits according to Table 9-3 on page 61, BER = 10-3 Tamb = 25°C Bit rate 20 Kbit/s Bit rate 2.4 Kbit/s ASK 100%, level of carrier limits according to Table 9-3 on page 61, BER = 10-3 Tamb = 25°C Bit rate 10 Kbit/s Bit rate 2.4 Kbit/s fRF = 433.92 MHz to fRF = 315 MHz fRF = 433.92 MHz to fRF = 345 MHz fRF = 433.92 MHz to fRF = 868.3 MHz fRF = 433.92 MHz to fRF = 915 MHz P = PREF_ASK + ∆PREF1 + ∆PREF2 P = PREF_FSK + ∆PREF1 + ∆PREF2 (4) (4) PREF_ASK PREF_ASK (4) (4) PREF_FSK PREF_FSK 17, 18 IS_RX IS_RX 10.5 mA A Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type*
2.1
Supply current RX mode
17, 18
10.3
mA
A
17, 18
IP
444
µA
B
2.3
Input sensitivity FSK fRF = 433.92 MHz
–104.0 –107.5
–106.0 –109.5
–107.5 –111.0
dBm dBm
B B
2.4
Input sensitivity ASK fRF = 433.92 MHz
–110.5 –114.5
–112.5 –116.5 –1.0
–0.8 +2.7
–114.0 –118.0
dBm dBm
B B
2.5
Sensitivity change at fRF = 315 MHz fRF = 345 MHz fRF = 868.3 MHz fRF = 915 MHz compared to fRF = 433.92 MHz
(4)
∆PREF1
dB +3.3
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions Maximum frequency difference of fRF between receiver and transmitter in FSK mode (fRF is the center frequency of the FSK signal with fDEV = ±16 kHz) Pin(1) Symbol Min. Typ. Max. Unit Type*
2.6
Maximum frequency offset in FSK mode
(4)
∆fOFFSET
–58
+58
kHz
B
2.7
With up to 2 dB loss of sensitivity. Note that the tolerable Supported FSK frequency frequency offset is for fDEV = ±22 kHz, 6 kHz deviation lower than for fDEV = ±16 kHz hence ∆fOFFSET ≤ ±52 kHz fRF = 315 MHz fRF = 345 MHz
(4)
fDEV
±14
±16
±22
kHz
B
(4) (4) (4) (4) (4)
NF NF NF NF NF fIF fIF fIF fIF fIF
6.0 6.2 7.0 9.7 10.3 227 235 223 226 238
dB dB dB dB dB kHz kHz kHz kHz kHz
B B B B B A A A A A
2.8
System noise figure
fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz
2.9
Intermediate frequency
fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz This value is for information only! Note that for crystal and system frequency offset calculations, ∆fOFFSET must be used.
2.10 System bandwidth
(4)
SBW
185
kHz
A
∆fmeas1 = 1,800 MHz System outband 2.11 2nd-order input intercept ∆fmeas2 = 2,026 MHz point with respect to fIF fIF = ∆fmeas2 – ∆fmeas1 Note:
(4)
IIP2
+50
dBm
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions ∆fmeas1 = 1.8 MHz ∆fmeas2 = 3.6 MHz fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz ∆fmeas1 = 1 MHz fRF = 315 MHz 2.13 System outband input 1 dB compression point fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz 2.14 LNA input impedance fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz 2.15 Allowable peak RF input level, ASK and FSK BER < 10-3, ASK: 100% FSK: fDEV = ±16 kHz f < 1 GHz f >1 GHz LO spurious emission at 2.16 LNA_IN fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz 2.17 Image rejection Within the complete image band Pin(1) (4) (4) (4) (4) (4) (4) (4) (4) (4) (4) 4 4 4 4 4 (4) (4) (4) (4) (4) (4) (4) (4) (4) (4) 20 Symbol IIP3 Min. Typ. Max. Unit Type* C
System outband 2.12 3rd-order input intercept point
–22
IIP3 IIP3 IIP3 IIP3 I1dBCP I1dBCP I1dBCP I1dBCP I1dBCP Zin_LNA Zin_LNA Zin_LNA Zin_LNA Zin_LNA PIN_max PIN_max –22
dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm Ω Ω Ω Ω Ω C C C C C C C C C C C C C C C C C C C C C C C A
–21 –17
–16
–31
–31
–30 –27
–26 (44 – j233) (40 – j211) (32 – j169) (21 – j78) (18 – j70) +10 +10
–10 –10 –57 –47
dBm dBm dBm dBm dBm dBm dBm dBm dBm dB
–100
–100
–97 –84
–84 30
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type* Peak level of useful signal to peak level of interferer for BER < 10-3 with any modulation Useful signal to interfering scheme of interferer 2.18 signal ratio FSK BR_Ranges 0, 1, 2 FSK BR_Range_3 ASK (PRF < PRFIN_High) Dynamic range Lower level of range fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz 2.19 RSSI output Upper level of range fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Gain Output voltage range 2.20 Output resistance RSSI pin RX mode TX mode
(4) (4) (4) (4), 36
SNRFSK0-2 SNRFSK3 SNRASK DRSSI
2 4 10 70
3 6 12
dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm
B B B A
(4), 36
PRFIN_Low
–116 –115 –115 –112 –111 –46 –45 –45 –42 –41
5.5 8.0 10 40 10.5 1100 12.5 50 400 8 32
A
(4), 36
PRFIN_High
A
(4), 36 (4), 36 36 OVRSSI RRSSI
mV/dB mV kΩ
A A C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
72
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ATA5423/ATA5425/ATA5428/ATA5429
12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions Sensitivity (BER = 10 ) is reduced by 6 dB if a continuous wave blocking signal at ±∆f is ∆PBlock higher than the useful signal level (bit rate = 20 Kbit/s, FSK, fDEV ±16kHz, Manchester code) fRF = 315 MHz ∆f ±0.75 MHz ∆f ±1.0 MHz ∆f ±1.5 MHz ∆f ±5 MHz ∆f ±10 MHz fRF = 345 MHz ∆f ±0.75 MHz ∆f ±1.0 MHz ∆f ±1.5 MHz ∆f ±5 MHz ∆f ±10 MHz fRF = 433.92 MHz ∆f ±0.75 MHz ∆f ±1.0 MHz ∆f ±1.5 MHz ∆f ±5 MHz ∆f ±10 MHz fRF = 868.3 MHz ∆f ±0.75 MHz ∆f ±1.0 MHz ∆f ±1.5 MHz ∆f ±5 MHz ∆f ±10 MHz fRF = 915 MHz ∆f ±0.75 MHz ∆f ±1.0 MHz ∆f ±1.5 MHz ∆f ±5 MHz ∆f ±10 MHz 2.22 CDEM Capacitor connected to pin 37 (CDEM) 56 60 63 69 71 56 60 63 69 71 55 59 62 68 70 50 53 57 67 69 50 53 57 67 69
–3
Pin(1)
Symbol
Min.
Typ.
Max.
Unit
Type*
(4)
∆PBlock
dBC
C
(4)
∆PBlock
dBC
C
2.21 Blocking
(4)
∆PBlock
dBC
C
(4)
∆PBlock
dBC
C
(4)
∆PBlock
dBC
C
37
–5%
15
+5%
nF
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 3 Test Conditions fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz VVS1 = VVS2 = 3V Tamb = 25°C VPWR_H = 0V fRF = 315 MHz RR_PWR = 56 kΩ RLopt = 2.5 kΩ fRF = 345 MHz RR_PWR = 56 kΩ RLopt = 2.4 kΩ fRF = 433.92 MHz RR_PWR = 56 kΩ RLopt = 2.3 kΩ fRF = 868.3 MHz RR_PWR = 30 kΩ RLopt = 1.3 kΩ fRF = 915 MHz RR_PWR = 33 kΩ RLopt = 1.1 kΩ RF_OUT matched to RLopt // j/(2 × π × fRF × 1.0 pF) PA on/0 dBm fRF = 315 MHz 3.3 Supply current TX mode power amplifier ON 1 fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Note: 17, 18 17, 18 17, 18 17, 18 17, 18 IS_TX_PAON1 IS_TX_PAON1 IS_TX_PAON1 IS_TX_PAON1 IS_TX_PAON1 8.5 8.6 8.6 9.6 9.6 mA mA mA mA mA B B B B B Pin(1) Symbol Min. Typ. Max. Unit Type* Power Amplifier/TX Mode IS_TX_PAOFF IS_TX_PAOFF 6.50 mA A
3.1
Supply current TX mode power amplifier OFF
6.95
mA
A
3.2
Output power 1
(10)
PREF1
–2.5
0
+2.5
dBm
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
74
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions VVS1 = VVS2 = 3V Tamb = 25°C VPWR_H = 0V fRF = 315 MHz RR_PWR = 30 kΩ RLopt = 1.0 kΩ fRF = 345 MHz RR_PWR = 33 kΩ RLopt = 1.1 kΩ fRF = 433.92 MHz RR_PWR = 27 kΩ RLopt = 1.1 kΩ fRF = 868.3 MHz RR_PWR = 16 kΩ RLopt = 0.5 kΩ fRF = 915 MHz RR_PWR = 15 kΩ RLopt = 0.25 kΩ RF_OUT matched to RLopt// j/(2 × π × fRF × 1.0 pF) PA on/5 dBm fRF = 315 MHz 3.5 Supply current TX mode power amplifier ON 2 fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Note: 17, 18 17, 18 17, 18 17, 18 17, 18 IS_TX_PAON2 IS_TX_PAON2 IS_TX_PAON2 IS_TX_PAON2 IS_TX_PAON2 10.3 10.4 10.5 11.2 11.8 mA mA mA mA mA B B B B B Pin(1) Symbol Min. Typ. Max. Unit Type*
3.4
Output power 2
(10)
PREF2
3.5
5.0
6.5
dBm
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
75
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions VVS1 = VVS2 = 3V Tamb = 25°C VPWR_H = AVCC fRF = 315 MHz RR_PWR = 30 kΩ RLopt = 0.38 kΩ fRF = 345 MHz RR_PWR = 31 kΩ RLopt = 0.38 kΩ fRF = 433.92 MHz RR_PWR = 27 kΩ RLopt = 0.36 kΩ fRF = 868.3 MHz RR_PWR = 20 kΩ RLopt = 0.22 kΩ fRF = 915 MHz RR_PWR = 16 kΩ RLopt = 0.24 kΩ RF_OUT matched to RLopt// j/(2 × π × fRF × 1.0 pF) PA on/10dBm fRF = 315 MHz 3.7 Supply current TX mode power amplifier ON 3 fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Tamb = –40°C to +85°C Pout = PREFX + ∆PREFX Output power variation for X = 1, 2 or 3 full temperature and VVS1 = VVS2 = 3.0V supply voltage range VVS1 = VVS2 = 2.7V VVS1 = VVS2 = 2.4V Note: 17, 18 17, 18 17, 18 17, 18 17, 18 IS_TX_PAON3 IS_TX_PAON3 IS_TX_PAON3 IS_TX_PAON3 IS_TX_PAON3 ∆PREF ∆PREF ∆PREF 15.7 15.8 15.8 17.3 19.3 mA mA mA mA mA B B B B B Pin(1) Symbol Min. Typ. Max. Unit Type*
3.6
Output power 3
(10)
PREF3
8.5
10
11.5
dBm
B
(10)
–0.8
–1.5 –2.5 –3.5
dB
B
3.8
(10) (10)
dB dB
B B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
76
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ATA5423/ATA5425/ATA5428/ATA5429
12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions fRF = 315 MHz 3.9 Impedance RF_OUT in RX mode fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz at ±10 MHz/at 5 dBm fRF = 315 MHz 3.10 Noise floor power amplifier fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz 3.11 ASK modulation rate This corresponds to 10 Kbit/s Manchester coding and 20 Kbit/s NRZ coding Pulling at nominal temperature and supply voltage fXTAL = resonant frequency of the XTAL C0 ≥ 1.0 pF Rm ≤ 120Ω Cm ≤ 7.0 fF Cm ≤ 14 fF 4.2 At start-up; after Transconductance XTO at start-up the amplitude start is regulated to VPPXTAL XTO start-up time C0 ≤ 2.2 pF Cm < 14fF Rm ≤ 120Ω Required for stable operation with internal load capacitors CL1 and CL2 24, 25 Pin(1) 10 10 10 10 10 (10) (10) (10) (10) (10) Symbol ZRF_OUT_RX ZRF_OUT_RX ZRF_OUT_RX ZRF_OUT_RX ZRF_OUT_RX LTX10M LTX10M LTX10M LTX10M LTX10M fData_ASK 1 Min. Typ. (36 – j502) (33 – j480) (19 – j366) (2.8 – j141) (2.6 – j135) Max. Unit Ω Ω Ω Ω Ω dBC/Hz dBC/Hz dBC/Hz dBC/Hz dBC/Hz Type* C C C C C C C C C C
–127 –126 –126 –125 –125
10
kHz
C
4
XTO
4.1
Pulling XTO due to XTO, CL1 and CL2 tolerances
24, 25
A
∆fXTO1
–50 –100
fXTAL 19
+50 +100
ppm
gm, XTO
ms
B
4.3
24, 25
TPWR_ON_IRQ_1
300
800
µs
A
4.4 4.5 Note:
Maximum C0 of XTAL Internal capacitors
24, 25 24, 25
C0max CL1, CL2 14.8 18 pF
3.8 21.2
pF pF
D B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type* 1.0 pF ≤ C0 ≤ 2.2 pF C ≤ 14.0 fF Pulling of radio frequency m Rm ≤120Ω fRF due to XTO, CL1 and PLL adjusted with CL2 versus temperature FREQ at nominal and supply changes temperature and supply voltage Cm = 5 fF, C0 = 1.8 pF Rm =15Ω 4.7 Amplitude XTAL after start-up V(XTAL1, XTAL2) peak-to-peak value V(XTAL1) peak-to-peak value Real part of XTO impedance at start-up Maximum series resistance Rm of XTAL after start-up 24, 25 24, 25 VPPXTAL VPPXTAL 700 350 mVpp mVpp C C
4.6
4, 10
∆fXTO2
–2
+2
ppm
C
4.8
C0 ≤ 2.2 pF, small signal start impedance, this 24, 25 value is important for crystal oscillator startup C0 ≤ 2.2 pF Cm ≤ 14 fFΩ fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz 24, 25
ReXTO
–2,000
–1,500
Ω
B
4.9
Rm_max
15 12.73193 13.94447 13.25311 13.41191 14.13324
120
Ω MHz MHz MHz MHz MHz
B
4.10
Nominal XTAL load resonant frequency
24, 25
fXTAL
D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
78
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ATA5423/ATA5425/ATA5428/ATA5429
12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters Test Conditions fRF = 315 MHz CLK division ratio = 3 CLK has nominal 50% duty cycle fRF = 345 MHz CLK division ratio = 3 CLK has nominal 50% duty cycle 4.11 External CLK frequency fRF = 433.92 MHz CLK division ratio = 3 CLK has nominal 50% duty cycle fRF = 868.3 MHz CLK division ratio = 3 CLK has nominal 50% duty cycle fRF = 915 MHz CLK division ratio = 3 CLK has nominal 50% duty cycle VDC(XTAL1, XTAL2) XTO running 4.12 DC voltage after start-up (IDLE mode, RX mode and TX mode) Note: Pin(1) Symbol Min. Typ. Max. Unit Type*
30
fCLK
4.244
MHz
D
30
fCLK
4.648
MHz
D
30
fCLK
4.418
MHz
D
30
fCLK
4.471
MHz
D
30
fCLK
4.711
MHz
D
24, 25
VDCXTO
–150
–30
mV
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 5 Synthesizer At ±fCLK, CLK enabled fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz At ±fXTO fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz At ±fCLK, CLK enabled fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz At ±fXTO fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Measured at 20 kHz distance to carrier fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type*
SPTX
5.1
Spurious TX mode
–72 –74 –68 –70 –69 –70 –68 –66 –60 –60
< –75 < –75 < –75 < –75 < –75
dBC
C
SPTX
dBC
C
SPRX
dBC
C
5.2
Spurious RX mode
SPRX
–75 –73 –75 –68 –67
dBC
C
5.3
In loop phase noise TX mode
LTX20k
–85 –85 –80 –75 –75 –121 –120 –120 –113 –113 –113 –113 –111 –107 –107
dBC/Hz
A
5.4
Phase noise at 1M RX mode
LRX1M
dBC/Hz
C
5.5
Phase noise at 1M TX mode
LTX1M
dBC/Hz
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
80
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ATA5423/ATA5425/ATA5428/ATA5429
12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 5.6 Phase noise at 10M RX mode Loop bandwidth PLL TX mode Test Conditions Noise floor PLL Frequency where the absolute value loop gain is equal to 1 fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz This correspond to 20 Kbit/s Manchester coding and 40 Kbit/s NRZ coding RX mode, pin 38 with short connection to GND, fRF = 0 Hz (DC) 6.1 Impedance RX mode fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz TX mode, pin 38 with short connection to GND, fRF = 0 Hz (DC) 6.2 Impedance TX mode fRF = 315 MHz fRF = 345 MHz fRF = 433.92 MHz fRF = 868.3 MHz fRF = 915 MHz Pin(1) Symbol LRX10M fLoop_PLL Min. Typ. Max. Unit dBC/Hz Type* C
–135
70 ±15.54 ±17.02 ±16.17 ±16.37 ±17.25 777.1 851.1 808.9 818.6 862.6
5.7
kHz
B
5.8
Frequency deviation TX mode
fDEV_TX
kHz
D
5.9
Frequency resolution
4, 10
∆fStep_PLL
Hz
D
5.10 FSK modulation rate
fData_FSK
1
20
kHz
B
6
RX/TX Switch 39 ZSwitch_RX 23000 (11.3 – j214) (11.1 – j181) (10.3 – j153) (8.9 – j73) (9 – j65) 5 (4.8 + j3.2) (4.7 + j3.4) (4.5 + j4.3) (5 + j9) (5 + j9.2) Ω A
39
ZSwitch_RX
Ω
C
39
ZSwitch_TX
Ω
A
39
ZSwitch_RX
Ω
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 7 Microcontroller Interface IVSINT < 10 µA if CLK is disabled and all interface pins are in stable condition and unloaded fCLK < 4.5 MHz CL = 10 pF CL = Load capacitance on pin CLK 2.4V ≤ VVSINT ≤ 5.25V 20% to 80% VVSINT CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled 7.4 Current consumption of the microcontroller interface VVSOUT disabled CL = Load capacitance on pin CLK (All interface pins, except pin CLK, are in stable condition and unloaded) 7.5 Internal equivalent capacitance Used for current calculation 30, 27 CCLK 8 pF B 27 IVSINT 27, 28, 29, 30, 31, 32, 33, 34, 35 trise 30 tfall Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type*
7.1
Voltage range for microcontroller interface
2.4
5.25
V
A
20 20
30 30
ns ns B
7.2
CLK output rise and fall time
( C CLK + C L ) × V VSINT × f XTO I VSINT = --------------------------------------------------------------------------3 < 10 µA
< 10 µA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 8 Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type* Power Supply General Definitions and AUX Mode
IVSINT
VSINT VSOUT
IEXT = IVSOUT – IVSINT
IVSOUT IEXT
8.1
Current consumption of an external device connected to pin VSOUT
IEXT
IVSINT VSINT VSOUT
IEXT = IVSOUT
IEXT = IVSOUT
IAUX_VAUX
VAUX
8.2
AUX mode
8.3
Power supply output voltage
AUX mode VVAUX ≥ 4V IVSOUT ≤ 13.5 mA (3.25V regulator mode, V_REG2, see Figure 5-1 on page 30)
22
VVSOUT
2.7
3.5
V
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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12. Electrical Characteristics: General (Continued)
This device is manufactured with an industrial (not automotive) grade process and process controls. Although this device may meet certain automotive grade criteria in performance, Atmel can not recommend that this device be used in any automotive application. All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V (1-battery application), VVS2 = 6.0V (2-battery application) and VVS2 = VVAUX = 5.0V (Base-station Application). Typical values are given at fRF = 433.92 MHz unless otherwise specified. Details about current consumption, timing and digital pin properties can be found in the specific sections of the “Electrical Characteristics”. No. Parameters 8.4 Current in AUX mode on pin VAUX Test Conditions IVSOUT = 0 VVAUX = 6V VVAUX = 4V to 7V CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled Pin(1) 19 Symbol IAUX_VAUX Min. Typ. 380 Max. 500 500 Unit µA µA Type* B
8.5
Supply current AUX mode
19, 22, 27
IS_AUX = IAUX_VAUX + IVSINT + IEXT IS_AUX IS_AUX = IAUX_VAUX + IEXT VVAUX 4 6 7 V
8.6
Supported voltage range VAUX
19
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Pin numbers in brackets mean they were measured with RF_IN matched to 50Ω according to Figure 3-1 on page 11 with component values according to Table 3-2 on page 12 and RF_OUT matched to 50Ω according to Figure 3-10 on page 21 with component values according to Table 3-7 on page 22.
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13. Electrical Characteristics: 1 Li Battery Application (3V)
All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V. Application according to Figure 2-1 on page 7. fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
9
1 Li Battery Application (3V)
IIDLE_VS1,2 or IRX_VS1,2 or IStartup_PLL_VS1,2 or ITX_VS1,2
VS1 VS2
9.1
Supported voltage range (every mode except high power TX mode) Supported voltage range (high power TX mode)
1 Li battery application (3V) PWR_H = GND 1 Li battery application (3V) PWR_H = AVCC 1 Li battery application (3V) VVS1 = VVS2 ≥ 2.6V VAUX open(1) IVSOUT ≤ 13.5 mA (no voltage regulator to stabilize VVSOUT) VVS1 = VVS2 ≥ 2.425V VAUX open(1) IVSOUT ≤ 1.5 mA (no voltage regulator to stabilize VVSOUT)
17, 18
VVS1, VVS2
2.4
3.6
V
A
9.2
17, 18
VVS1, VVS2
2.7
3.6
V
A
9.3
Power supply output voltage
22
VVSOUT
2.4
VVS1
V
B
9.4 9.5 9.6
Supply voltage for microcontroller interface Threshold hysteresis Reset threshold voltage at pin VSOUT (N_RESET) Reset threshold voltage at pin VSOUT (Low_Batt) Supply current OFF mode VVS1 = VVS2 ≤ 3.6V VVSINT = 0V VThres_2 – VThres_1
27 22 22
VVSINT ∆VThres VThres_1
2.4 60 2.18 80 2.3
5.25 100 2.42
V mV V
A B A
9.7 9.8
22 17, 18, 22, 27
VThres_2 IS_OFF
2.26
2.38 2
2.5 350
V nA
A A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The voltage of VAUX may rise up to 2V. The current IVAUX may not exceed 100 µA.
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13. Electrical Characteristics: 1 Li Battery Application (3V) (Continued)
All parameters refer to GND and are valid for Tamb = 25°C, VVS1 = VVS2 = 3.0V. Application according to Figure 2-1 on page 7. fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified No. Parameters Test Conditions VVS1 = VVS2 ≤ 3V IVSOUT = 0 CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled VVSOUT disabled 9.10 9.11 9.12 9.13 Supply current IDLE mode Current in RX mode on VVS1 = VVS2 ≤ 3V pin VS1and VS2 IVSOUT = 0 Supply current RX mode Current during TStartup_PLL on pin VS1 and VS2 CLK enabled VVSOUT enabled VVS1 = VVS2 ≤ 3V IVSOUT = 0 17, 18, 22, 27 17, 18 17, 18, 22, 27 17, 18 IS_IDLE IRX_VS1, 2 IS_RX IStartup_PLL_VS1, 2 312 17, 18 IIDLE_VS1, 2 260 370 µA B 430 µA A Pin Symbol Min. Typ. Max. Unit Type*
9.9
Current in IDLE mode on pin VS1 and VS2
225
320
µA
B
IS_IDLE = IIDLE_VS1, 2 + IVSINT + IEXT 10.5 14 mA A
IS_RX = IRX_VS1, 2 + IVSINT + IEXT 8.8 11.5 mA C
9.14
Current in I IDLE_VS1,2 × T SLEEP + I Startup_PLL_VS1,2 × T Startup_PLL + I RX_VS1,2 × ( T Startup_Sig_Proc + T Bitcheck ) RX polling mode on pin I P = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------T Sleep + T Startup_PLL + T Startup_Sig_Proc + T Bitcheck VS1 and VS2 CLK enabled VVSOUT enabled IS_Poll = IP + IVSINT + IEXT 17, 18, 22, 27 IS_Poll IS_Poll = IP + IEXT IS_Poll = IP
9.15
Supply current RX polling mode
CLK disabled VVSOUT enabled VVSOUT disabled
9.16
VVS1 = VVS2 ≤ 3V IVSOUT = 0 Pout = 5 dBm/10 dBm 315 MHz/5 dBm 315 MHz/10 dBm 345 MHz/5 dBm Current in TX mode on 345 MHz/10 dBm pin VS1 and VS2 433.92 MHz/5 dBm 433.92 MHz/10 dBm 868.3 MHz/5 dBm 868.3 MHz/10 dBm 915 MHz/5 dBm 915 MHz/10 dBm Supply current TX mode CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled
17, 18
ITX_VS1_VS2
10.3 15.7 10.4 15.8 10.5 15.8 11.2 17.3 11.8 19.3
13.4 20.5 13.5 20.6 13.5 20.5 14.5 22.5 15.3 25.1
mA
B
9.17
17, 18, 22, 27
IS_TX
IS_TX = ITX_VS1, 2 + IVSINT + IEXT IS_TX = ITX_VS1, 2 + IEXT
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The voltage of VAUX may rise up to 2V. The current IVAUX may not exceed 100 µA.
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14. Electrical Characteristics: 2 Li Battery Application (6V)
All parameters refer to GND and are valid for Tamb = 25°C, VVS2 = 6.0V. Application according to Figure 2-3 on page 9 fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
10
2 Li Battery Application (6V)
IIDLE_VS2 or IRX_VS2 or IStartup_PLL_VS2 or ITX_VS2
VS2
10.1
Supported voltage range
2 Li battery application (6V) 2 Li battery application (6V) VVS2 ≥ 4.4V VAUX open(1) IVSOUT ≤ 13.5 mA (3.3V regulator mode, V_REG1, see Figure 5-1 on page 30)
17
VVS2
4.4
6.6
V
A
10.2
Power supply output voltage
22
VVSOUT
3.0
3.5
V
A
10.3 10.4 10.5
Supply voltage for microcontroller interface Threshold hysteresis Reset threshold voltage at pin VSOUT (N_RESET) Reset threshold voltage at pin VSOUT (Low_Batt) Supply current OFF mode VVS2 ≤ 6.6V VVSINT = 0V VVS2 ≤ 6V IVSOUT = 0 CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled VVSOUT disabled VThres_2 – VThres_1
27 22 22
VVSINT ∆VThres VThres_1
2.4 60 2.18 80 2.3
5.25 100 2.42
V mV V
A B A
10.6
22 17, 22, 27
VThres_2 IS_OFF
2.26
2.38
2.5
V
A
10.7
10
350
nA
A
10.8
Current in IDLE mode on pin VS2
17
IIDLE_VS2
410
560
µA
A
348 309 17, 22, 27 IS_IDLE IRX_VS2 IS_RX
490 430
µA µA
B B
10.9 10.10 10.11
Supply current IDLE mode Current in RX mode on pin VS2 Supply current RX mode IVSOUT = 0 CLK enabled VVSOUT enabled
IS_IDLE = IIDLE_VS2 + IVSINT + IEXT 10.8 14.5 mA B
17 17, 22, 27
IS_RX = IRX_VS2 + IVSINT + IEXT
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The voltage of VAUX may rise up to 2 V. The current IVAUX may not exceed 100 µA.
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14. Electrical Characteristics: 2 Li Battery Application (6V) (Continued)
All parameters refer to GND and are valid for Tamb = 25°C, VVS2 = 6.0V. Application according to Figure 2-3 on page 9 fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified No. 10.12 Parameters Current during TStartup_PLL on pin VS2 Current in RX polling mode on on pin VS2 Test Conditions IVSOUT = 0 Pin 17 Symbol IStartup_PLL_VS2 Min. Typ. 9.1 Max. 12 Unit mA Type* C
10.13
I IDLE_VS2 × T SLEEP + I Startup_PLL_VS2 × T Startup_PLL + I RX_VS2 × ( T Startup_Sig_Proc + T Bitcheck ) I P = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------T Sleep + T Startup_PLL + T Startup_Sig_Proc + T Bitcheck CLK enabled VVSOUT enabled
IS_Poll = IP + IVSINT + IEXT 17, 22, 27 IS_Poll IS_Poll = IP + IEXT IS_Poll = IP
10.14
Supply current RX polling mode
CLK disabled VVSOUT enabled VVSOUT disabled IVSOUT = 0 Pout = 5 dBm/10 dBm 315 MHz/5 dBm 315 MHz/10 dBm 345 MHz/5 dBm 345 MHz/10 dBm 433.92 MHz/5 dBm 433.92 MHz/10 dBm 868.3 MHz/5 dBm 868.3 MHz/10 dBm 915 MHz/5 dBm 915 MHz/10 dBm CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled
10.15
Current in TX mode on pin VS2
17, 19
ITX_VS2
10.7 16.2 10.8 16.3 10.9 16.3 11.6 17.8 12.3 20.0
13.9 21.0 14.0 21.2 14.0 21.0 15.0 23.0 16.0 26.0
mA
B
10.16
Supply current TX mode
17, 22, 27
IS_TX
IS_TX = ITX_VS2 + IVSINT + IEXT IS_TX = ITX_VS2 + IEXT
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The voltage of VAUX may rise up to 2 V. The current IVAUX may not exceed 100 µA.
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15. Electrical Characteristics: Base-station Application (5V)
All parameters refer to GND and are valid for Tamb = 25°C, VVS2 = 5.0V. Application according to Figure 2.2 on page 8 fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
VAUX
11
Base-station Application (5V)
IIDLE_VS2,VAUX
VS2
or IRX_VS2,VAUX or IStartup_PLL_VS2,VAUX or ITX_VS2,VAUX
11.1
Supported voltage range
Base-station application (5V) Base-station application (5V) VVS2 = VVAUX IVSOUT ≤ 13.5 mA (3.25V regulator mode, V_REG2, see Figure 5-1 on page 30)
17, 19, 27
VVS2, VAUX
4.75
5.25
V
A
11.2
Power supply output voltage
22
VVSOUT
3.0
3.5
V
A
11.3 11.4 11.5
Supply voltage for microcontrollerinterface Threshold hysteresis Reset threshold voltage at pin VSOUT (N_RESET) Reset threshold voltage at pin VSOUT (Low_Batt) IVSOUT = 0 CLK enabled VVSOUT enabled VThres_2 – VThres_1
27 22 22
VVSINT ∆VThres VThres_1
2.4 60 2.18 80 2.3
5.25 100 2.42
V mV V
A B A
11.6
22
VThres_2
2.26
2.38
2.5
V
A
444 17, 19 IIDLE_VS2_VAUX 380 310 17, 19, 22, 27 IS_IDLE IRX_VS2_VAUX IS_RX IStartup_PLL_VS2,
VAUX
580 µA 500 400 B
11.7
Current in IDLE mode on pin VS2 and VAUX
CLK disabled VVSOUT enabled VVSOUT disabled
11.8
Supply current in IDLE mode Current in RX mode on pin VS2 and VAUX Supply current in RX mode Current during TStartup_PLL on pin VS2 and VAUX IVSOUT = 0 CLK enabled VVSOUT enabled
IS_IDLE = IIDLE_VS2_VAUX + IVSINT + IEXT 10.8 14.5 mA B
11.9
17, 19 17, 19, 22, 27 17, 19
11.10
IS_RX = IRX_VS2_VAUX + IVSINT + IEXT
11.11
IVSOUT = 0
9.1
12
mA
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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15. Electrical Characteristics: Base-station Application (5V) (Continued)
All parameters refer to GND and are valid for Tamb = 25°C, VVS2 = 5.0V. Application according to Figure 2.2 on page 8 fRF = 315 MHz/345 MHz/433.92 MHz/868.3 MHz/915 MHz unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Current in RX_Polling_Mode on pin VS2 and VAUX 11.12 I IDLE_VS2,VAUX × T SLEEP + I Startup_PLL_VS2,VAUX × T Startup_PLL + I RX_VS2,VAUX × ( T Startup_Sig_Proc + T Bitcheck ) I P = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------T Sleep + T Startup_PLL + T Startup_Sig_Proc + T Bitcheck CLK enabled VVSOUT enabled 11.13 Supply current in RX polling mode CLK disabled VVSOUT enabled VVSOUT disabled IVSOUT = 0 Pout = 5dBm/10dBm 315 MHz/5dBm 315 MHz/10dBm 345 MHz/5dBm 345 MHz/10dBm 433.92 MHz/5dBm 433.92 MHz/10dBm 868.3 MHz/10dBm 868.3 MHz/10dBm 915 MHz/5dBm 915 MHz/10dBm CLK enabled VVSOUT enabled CLK disabled VVSOUT enabled 17, 19, 22, 27 IS_Poll IS_Poll = IP + IEXT IS_Poll = IP IS_Poll = IP + IVSINT + IEXT
11.14
Current in TX mode on pin VS2 and VAUX
17, 19
ITX_VS2_VAUX
10.7 16.2 10.8 16.3 10.9 16.3 11.6 17.8 12.3 20.0
13.9 21.0 14.0 21.2 14.0 21.0 15.0 23.0 16.0 26.0
mA
B
11.15
Supply current in TX mode
17, 19, 22, 27
IS_TX
IS_TX = ITX_VS2_VAUX + IVSINT + IEXT IS_TX = ITX_VS2_VAUX + IEXT
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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16. Digital Timing Characteristics
All parameters refer to GND and are valid for Tamb = 25°C. VVS1 = VS2 = 3.0V (1 Li battery application (3V)), VVS2 = 6.0V (2 Li battery application (6V)) and VVS2 = 5.0V (Base-station Application(5V)) unless otherwise specified. No. 12 12.1 Parameters Basic clock cycle XLIM = 0 BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 12.2 Extended basic clock cycle XLIM = 1 BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 13 RX Mode/RX Polling Mode Sleep and XSleep are defined in control register 4 Sleep × XSleep × 1024 × TDCLK 798.5 × TDCLK 882 498 306 210 × TDCLK Sleep × XSleep × 1024 × TDCLK 798.5 × TDCLK 882 498 306 210 × TDCLK TXDCLK 8 4 2 1 × TDCLK 8 4 2 1 × TDCLK Test Conditions Pin Symbol TDCLK Min. 16/fXTO Typ. Max. 16/fXTO Unit µs Type* A Basic Clock Cycle of the Digital Circuitry
µs
A
16 8 4 2 × TDCLK
16 8 4 2 × TDCLK
13.1
Sleep time
TSleep
ms
A
13.2
Start-up PLL RX mode from IDLE mode BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 Average time during polling. No RF signal applied. fSignal = 1/(2 × tee) Signal data rate Manchester (Lim_min and Lim_max up to ±50% of tee, see Figure 9-4 on page 56) Bit-check time for a valid input signal fSignal NBit-check = 0 NBit-check = 3 NBit-check = 6 NBit-check = 9 BR_Range = BR_Range0 BR_Range1 BR_Range2 BR_Range3
TStartup_PLL
µs
A
13.3
Start-up signal processing
TStartup_Sig_Proc
A
13.4
Time for bit check
TBit_check
3/fSignal 6/fSignal 9/fSignal 1.0 2.0 4.0 8.0
1/fSignal
3.5/fSignal 6.5/fSignal 9.5/fSignal 2.5 5.0 10.0 20.0
ms
C
13.5
Bit-rate range
BR_Range
Kbit/s
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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16. Digital Timing Characteristics (Continued)
All parameters refer to GND and are valid for Tamb = 25°C. VVS1 = VS2 = 3.0V (1 Li battery application (3V)), VVS2 = 6.0V (2 Li battery application (6V)) and VVS2 = 5.0V (Base-station Application(5V)) unless otherwise specified. No. Parameters Test Conditions XLIM = 0 BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 31 XLIM = 1 BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 Edge-to-edge time period of the data signal for full sensitivity in RX mode TX Mode Start-up time From IDLE mode TStartup 331.5 × TDCLK 1.5 × TDCLK 2 250 250 331.5 × TDCLK µs A BR_Range_0 BR_Range_1 BR_Range_2 BR_Range_3 200 100 50 25 500 250 125 62.5 TDATA_min Pin Symbol Min. Typ. Max. Unit Type*
13.6
Minimum time period between edges at pin SDO_TMDO in RX transparent mode
10 × TXDCLK
µs
A
13.7
TDATA
µs
B
14 14.1 15 15.1 15.2 15.3 15.4
Configuration of the Transceiver with 4-wire Serial Interface CS set-up time to rising edge of SCK SCK cycle time SDI_TMDI set-up time to rising edge of SCK SDI_TMDI hold time from rising edge of SCK SDO_TMDO enable time from rising edge of CS SDO_TMDO output delay from falling edge of SCK SDO_TMDO disable time from falling edge of CS CS disable time period Time period SCK low to CS high Time period SCK low to CS low Time period CS low to SCK high CL = 10 pF 33, 35 33 32, 33 32, 33 TCS_setup TCycle TSetup THold TOut_enable µs µs ns ns A A C C
15.5
31, 35
250
ns
C
15.6
31, 35
TOut_delay
250
ns
C
15.7
31, 33
TOut_disable TCS_disable TSCK_setup1 TSCK_setup2 TSCK_hold 1.5 × TDCLK 250 250 250
250
ns
C
15.8 15.9 15.10 15.11
35 33, 35 33, 35 33, 35
µs ns ns ns
A C C C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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16. Digital Timing Characteristics (Continued)
All parameters refer to GND and are valid for Tamb = 25°C. VVS1 = VS2 = 3.0V (1 Li battery application (3V)), VVS2 = 6.0V (2 Li battery application (6V)) and VVS2 = 5.0V (Base-station Application(5V)) unless otherwise specified. No. 16 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Start Time Push Button Tn and PWR_ON Timing of Wake-up via PWR_ON or Tn From OFF mode to IDLE mode, applications according to Figure 2-1 on page 7, Figure 2.2 on page 8 and Figure 2-3 on page 9 XTAL: Cm < 14 fF (typ. 5 fF) C0 < 2.2 pF (typ. 1.8 pF) Rm ≤120Ω (typ. 15Ω) 1 Li battery application (3V) C1 = C2 = 68 nF C3 = C4 = 68 nF C5 = 10 nF 2 Li battery application (6V) C1 = C4 = 68 nF C2 = C3 = 2.2 µF C5 = 10 nF Base-station Application (5V) C1 = C3 = C4 = 68 nF C2 = C12 = 2.2 µF C5 = 10 nF
16.1
PWR_ON high to positive edge on pin IRQ (see Figure 7-4 on page 46)
29, 40 TPWR_ON_IRQ_1
0.3
0.8
ms
B
0.45
1.3
ms
0.45
1.3
ms
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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16. Digital Timing Characteristics (Continued)
All parameters refer to GND and are valid for Tamb = 25°C. VVS1 = VS2 = 3.0V (1 Li battery application (3V)), VVS2 = 6.0V (2 Li battery application (6V)) and VVS2 = 5.0V (Base-station Application(5V)) unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. 2× TDCLK Unit Type* PWR_ON high to positive edge on pin Every mode except OFF IRQ (see Figure 7-4 on mode page 46) From OFF mode to IDLE mode, applications according to Figure 2-1 on page 7, Figure 2.2 on page 8 and Figure 2-3 on page 9 XTAL: Cm < 14 fF (typ 5 fF) C0 < 2.2 pF (typ 1.8 pF) Rm ≤ 120Ω (typ 15Ω) 1 Li battery application (3V) Tn low to positive edge C1 = C2 = 68 nF on pin IRQ (see Figure C3 = C4 = 68 nF 7-2 on page 44) C5 = 10 nF 2 Li battery application (6V) C1 = C4 = 68 nF C2 = C3 = 2.2 µF C5 = 10 nF Base-station Application (5V) C1 = C3 = C4 = 68 nF C2 = C12 = 2.2 µF C5 = 10 nF 16.4 Push button debounce time 29, 41, Every mode except OFF 42, 43, mode 44, 45 TDebounce 8195 × TDCLK
16.2
29, 40 TPWR_ON_IRQ_2
µs
A
16.3
29, 41, 42, 43, 44, 45
TTn_IRQ
0.3
0.8
ms
B
0.45
1.3
ms
0.45
1.3
ms
8195 × TDCLK
µs
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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17. Digital Port Characteristics
All parameters refer to GND and are valid for Tamb = –40°C to +85 °C, VVS1 = VS2 = 2.4V to 3.6V (1 Li battery application (3V)) and VVS2 = 4.4V to 6.6 V (2 Li battery application (6V)) and VVS2 = 4.75V to 5.25V (Base-station Application (5V)). Typical values at VVS1 = VVS2 = 3V and Tamb = 25°C unless otherwise specified. No. 17 Parameters Digital Ports CS input Low level input voltage VVSINT = 2.4V to 5.25V 35 35 33 33 32 32 VIl VIh VIl VIh VIl VIh 0.8 × VVSINT 0 0.8 × VVSINT 0.8 × VVSINT 0.2 × VVSINT VVSINT 0.2 × VVSINT VVSINT 0.2 × VVSINT VVSINT 0 V V V V V V A A A A A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
17.1
High level input voltage VVSINT = 2.4V to 5.25V SCK input Low level input voltage VVSINT = 2.4V to 5.25V
17.2
High level input voltage VVSINT = 2.4V to 5.25V SDI_TMDI input Low level input voltage VVSINT = 2.4V to 5.25V
17.3
High level input voltage VVSINT = 2.4V to 5.25V 17.4 TEST1 input TEST1 input must always be directly connected to GND TEST2 input must always be direct connected to GND Internal pull-down with series connection of 40 kΩ ±20% resistor and diode Internal pull-down with series connection of 40 kΩ ±20% resistor and diode Internal pull-up resistor of 50 kΩ ±20% Internal pull-up resistor of 50 kΩ ±20%
20
V
17.5
TEST2 input
23
0
0
V
PWR_ON input Low level input voltage 17.6 High level input voltage(1)
40
VIl
0.4
V
A
40
VIh
0.8 × VVS2 0.2 × VVS2 × VVS2 –0.5V 0.25
V
A
Tn input Low level input voltage 17.7 High level input voltage(1) 433_N868 input Low level input voltage 17.8 Input current low High level input voltage Input current high Note:
41, 42, 43, 44, 45 41, 42, 43, 44, 45 6 6 6 6
VIl
V
A
VIh VIl IIl VIh IIh
V
A
V µA V µA
A A A A
–5
1.7 AVCC 1
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 1. If a logic high level is applied to this pin, a minimum serial impedance of 100Ω must be ensured for proper operation over full temperature range.
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17. Digital Port Characteristics (Continued)
All parameters refer to GND and are valid for Tamb = –40°C to +85 °C, VVS1 = VS2 = 2.4V to 3.6V (1 Li battery application (3V)) and VVS2 = 4.4V to 6.6 V (2 Li battery application (6V)) and VVS2 = 4.75V to 5.25V (Base-station Application (5V)). Typical values at VVS1 = VVS2 = 3V and Tamb = 25°C unless otherwise specified. No. Parameters PWR_H input Low level input voltage 17.9 Input current low High level input voltage Input current high SDO_TMDO output Saturation voltage low Saturation voltage high IRQ output Saturation voltage low Saturation voltage high VVSINT = 2.4V to 5.25V ISDO_TMDO = 250 µA VVSINT = 2.4V to 5.25V ISDO_TMDO = –250 µA VVSINT = 2.4V to 5.25V IIRQ = 250 µA VVSINT = 2.4V to 5.25V IIRQ = –250 µA VVSINT = 2.4V to 5.25V ICLK = 100 µA internal series resistor of 1 kΩ for spurious emission reduction in PLL Test Conditions Pin 9 9 9 9 31 31 29 29 Symbol VIl IIl VIh IIh Vol Voh Vol Voh VVSINT – 0.4 VVSINT – 0.4 0.15 VVSINT – 0.15 0.15 VVSINT – 0.15 0.4 1.7 Min. Typ. Max. 0.25 Unit V µA V µA V V V V Type* A A A A B B B B
–5
AVCC 1 0.4
17.10
17.11
CLK output Saturation voltage low 17.12
30
Vol
0.15
0.4
V
B
VVSINT = 2.4V to 5.25V ICLK = –100 µA internal series resistor Saturation voltage high of 1 kΩ for spurious emission reduction in PLL N_RESET output Saturation voltage low Saturation voltage high RX_ACTIVE output Saturation voltage low Saturation voltage high VVSINT = 2.4V to 5.25V IN_RESET = 250 µA VVSINT = 2.4V to 5.25V IN_RESET = –250 µA VVSINT = 2.4V to 5.25V IRX_ACTIVE = 25 µA VVSINT = 2.4V to 5.25V IRX_ACTIVE = –1500 µA Open drain output IDEM_OUT = 250 µA
30
Voh
VVSINT – 0.4
VVSINT – 0.15
V
B
28 28 46 46 34
Vol Voh Vol Voh Vol VAVCC –0.5 VVSINT – 0.4
0.15 VVSINT – 0.15 0.25 VAVCC
0.4
V V
B B B B B
17.13
0.4
V V
17.14
–0.15
0.15 0.4
17.15
DEM_OUT output Saturation voltage low
V
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. If a logic high level is applied to this pin, a minimum serial impedance of 100Ω must be ensured for proper operation over full temperature range.
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18. Ordering Information
Extended Type Number ATA5423-PLQW ATA5425-PLQW ATA5428-PLQW ATA5429-PLQW ATA5423-PLSW ATA5425-PLSW ATA5428-PLSW ATA5429-PLSW Note: W = RoHS compliant Package QFN48 QFN48 QFN48 QFN48 QFN48 QFN48 QFN48 QFN48 Remarks 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm 7 mm × 7 mm Delivery Taped and reeled + Dry pack Taped and reeled + Dry pack Taped and reeled + Dry pack Taped and reeled + Dry pack Tubes + Dry pack Tubes + Dry pack Tubes + Dry pack Tubes + Dry pack
19. Package Information
Package: QFN 48 - 7 x 7 Exposed pad 5.1 x 5.1 Dimensions in mm Not indicated tolerances ± 0.05 1 max.
+0 0.05-0.05
7 5.5 5.1 37 36 48 1
48 1
technical drawings according to DIN specifications
12 0.23 0.4±0.1
25 24 13 0.5 nom.
12
Drawing-No.: 6.543-5089.02-4 Issue: 1; 14.01.03
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20. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4841D-WIRE-10/07 History • Put datasheet in a new template • • • • Put datasheet in a new template kBaud replaced through Kbit/s Baud replaced through bit Table 9-6 “Interrupt Handling” on page 65 changed
4841C-WIRE-05/06
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21. Table of Contents
Features ..................................................................................................... 1 Applications .............................................................................................. 2 Benefits...................................................................................................... 2 1 2 3 4 5 6 7 8 9 General Description ................................................................................. 3 Application Circuits ................................................................................. 7 RF Transceiver ....................................................................................... 10 XTO .......................................................................................................... 25 Power Supply ......................................................................................... 30 Microcontroller Interface ....................................................................... 36 Digital Control Logic .............................................................................. 36 Transceiver Configuration .................................................................... 49 Operation Modes .................................................................................... 52
10 Absolute Maximum Ratings .................................................................. 66 11 Thermal Resistance ............................................................................... 66 12 Electrical Characteristics: General ...................................................... 67 13 Electrical Characteristics: 1 Li Battery Application (3V) .................... 85 14 Electrical Characteristics: 2 Li Battery Application (6V) .................... 87 15 Electrical Characteristics: Base-station Application (5V) .................. 89 16 Digital Timing Characteristics .............................................................. 91 17 Digital Port Characteristics ................................................................... 95 18 Ordering Information ............................................................................. 97 19 Package Information ............................................................................. 97 20 Revision History ..................................................................................... 98
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4841D–WIRE–10/07