ATR3515

Features • • • • • • • Frequency Range 4.9 GHz to 5.9 GHz Supply-voltage 2.7 V to 3.6 V 2.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM 26.5 dB P1dB On-chip Power Detector with 20 dB Dynamic Range Power-down Mode and Biasing Control Low Profile Lead-free Plastic Package QFN16 (4 ´ 4 ´ 0.9 mm) Applications • • • • IEEE 802.11a OFDM WLAN Hiperlan2 WLAN PC Cards, PCMCIA 5 GHz ISM Band Application 5-GHz WLAN Power Amplifier for 802.11a ATR3515 Preliminary Electrostatic sensitive device. Observe precautions for handling. Description Process The 5-GHz power amplifier is designed in Atmel’s advanced Silicon-Germanium (SiGe) process and provides excellent linearity and noise performance as well as good power-added efficiency. Circuitry The PA consists of a two-stage amplifier with a P1db of 26 dBm. The output stage was realized using an open-collector structure. Power-up/down and output level are controlled at bias control pin 6 (VCTL). An on-chip power detector provides a voltage proportional to the output power. Figure 1. Block Diagram VCC1 15 VCC2 13 ATR3515 RFIN 3 Matching RFOUT 11 RFOUT 10 Bias control Power Detector 6 VCTL 16 VCC_CTL 7 VDET_OUT Rev. 4514H–WLAN–12/03 Pin Configuration Figure 2. Pinning QFN16 VCC_CTL VCC1 GND VCC2 GND NC RFIN GND 16 15 14 13 12 GND 1 2 ATR3515 11 RFOUT 3 GND on the 10 RFOUT Paddel 9 GND 4 5678 GND VCTL VDET_OUT GND Pin Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Paddel Symbol GND NC RFIN GND GND VCTL VDET_OUT GND GND RFOUT RFOUT GND VCC2 GND VCC1 VCC_CTL – Function Ground Not connected RF input Ground Ground Power-up/biasing control voltage Power detector output voltage Ground Ground RF output RF output Ground Supply voltage for PA stage Ground Supply voltage for driver stage Supply voltage for biasing control Ground 2 ATR3515 [Preliminary] 4514H–WLAN–12/03 ATR3515 [Preliminary] Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Junction temperature Storage temperature Input RF power Control voltage power up/down and biasing Note: Pin Symbol VCC ICC Tj TStg PIN VCTL Value 3.8 800 150 -40 to +125 12 0 to 2.0 Unit V mA °C °C dBm V The part may not survive all maximums applied simultaneously. Operating Range Parameters Supply voltage range Ambient temperature range Symbol VCC Tamb Value 2.7 to 3.6 -25 to +75 Unit V °C Electrical Characteristics No. 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Parameters Supply voltage Frequency range Control voltage range Control current Current consumption Current consumption PA operating mode Power down mode PA Operation Quiescent Power down mode ON is the time that ICC returns to normal and OFF is the time the current needs to decrease to 10% of normal mode With external matching At ±11 MHz offset from carrier Spectrum mask(1) At ±20 MHz offset from carrier At ±30 MHz offset from carrier Test Conditions Pin Symbol VCC f VCTL VCTL ICTL Icq Ipd 180 10 Min. 2.7 4.9 1.3 Typ. 3.3 Max. 3.6 5.9 1.9 0.2 200 Unit V GHz V V µA mA µA Type* A A A A A A A 1.7 Turn on/off time ton/off 0.5 0.6 µs C 1.8 1.9 1.10 1.11 Input and output return loss -12 -8 -22 -30 -42 dB dBr dBr dBr C B B B *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. OFDM signal according to 802.11a specification with Pout = 21 dBm at 54 Mbps. 3 4514H–WLAN–12/03 Electrical Characteristics - Unmodulated Carrier Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C No. 2.0 2.1 2.3 2.4 2.5 Parameters P1dB output power Small signal gain Gain deviation Reverse isolation Icq = 180 mA, small signal condition Within 200 Mhz frequency band Test Conditions Pin Symbol Psat P1dB GL Gd ISOr -1 30 36 Min. Typ. 28 26.5 18 +1 Max. Unit dBm dBm dB dB dB Type* A A A A C Saturated output power For reference *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 54 Mbps OFDM-modulation Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C, IEEE802.11a conform 54 Mbps OFDM modulation, EVM measurement equipement noise floor included in EVM measurement result . No. 3.0 3.1 3.2 Parameters Linear power gain Current consumption Test Conditions POUT = 19 dBm POUT = 19 dBm Pin Symbol EVM GL ICC Min. Typ. 2.5 20 240 Max. Unit % dB mA Type* C C A Error vector magnitude POUT = 19 dBm *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - Power Detector Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C. No. 4.0 4.2 Parameters Settling time Test Conditions Pin Symbol VDET tset Min. 0 0.5 Typ. Max. 2.4 Unit V µs Type* A C Detector voltage range POUT = 2 to 28 dBm *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 ATR3515 [Preliminary] 4514H–WLAN–12/03 ATR3515 [Preliminary] Figure 3. Application Circuit VCC_CTL VCC1 VCC2 * Output Input * ATR3515 * * microstrip line VCTL VDET_OUT 5 4514H–WLAN–12/03 Ordering Information Extended Type Number ATR3515-PEP ATR3515-PEQ Package QFN16 - 4x4 QFN16 - 4x4 Remarks Taped and reeled, MOQ 1,500 Taped and reeled, MOQ 6,000 Package Information 6 ATR3515 [Preliminary] 4514H–WLAN–12/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Literature Requests www.atmel.com/literature Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. 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