ATR7032-DEV-BOARD

Features • • • • • • • • • Frequency Range 2.4 GHz to 2.5 GHz Supply Voltage 2.7V to 3.6V 32 dB Power Gain 23 dBm Linear Output Power for IEEE 802.11b Mode Operation EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation On-chip Power Detector with 20 dB Dynamic Range Power-down Mode and Biasing Control Input and Interstage Matching Fully On-chip Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm) Applications • • • • IEEE 802.11b DSSS WLAN IEEE 802.11g OFDM WLAN PC Cards, PCMCIA, Access Points 2.4 GHz ISM Band Application High Gain Power Amplifier for 802.11b/g WLAN Systems ATR7032 Preliminary 1. Description This power amplifier (PA) is designed for high-performance 802.11b and 802.11g multi-mode applications such as Mini PCI and PCMCIA for portable devices and access points. The low profile plastic package with internal input matching to 50Ω and on-chip interstage matching minimizes the PCB board-space and allows simplified integration with very few passive components. The on-chip power detector provides a voltage linear to the output power, while the standby/bias control logic provides power-saving and shutdown options. The PA is realized as a three stage PA with internal interstage matching and an open-collector output structure. The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process and provides excellent linearity and noise performance, high gain, and good poweradded efficiency. Rev. 4846B–WLAN–04/05 Figure 1-1. Block Diagram V_PA2 NC NC 9 IC 12 13 V_PA1 11 10 ATR7032 14 8 RF_OUT 15 50 Ω Input Match Interstage Matching Interstage Matching GND_RF RF_IN 7 6 RF_OUT IC 16 5 RF_OUT RF_OUT Paddle GND_RF Standby/ Bias Circuitry Voltage Detector 1 VCTRL VCC 2 GND_VCC 3 VDET 4 2 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] 2. Pin Configuration Figure 2-1. Pinning QFN16 IC RF_IN GND V_PA1 VCTRL VCC GND_VCC VDET 16 15 14 13 12 IC 1 11 V_PA2 2 ATR7032 10 NC 3 9 NC 4 5678 RF_OUT RF_OUT RF_OUT RF_OUT Table 2-1. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Slug Pin Description Symbol VCTRL VCC GND_VCC VDET RF_OUT RF_OUT RF_OUT RF_OUT NC NC V_PA2 IC V_PA1 GND RF_IN IC – Function Power-up/biasing control voltage Supply voltage Ground Power detector voltage RF output RF output RF output RF output Not connected Not connected Supply voltage PA stage 2 Internally connected, on-chip matching; must not be externally connected Supply voltage PA stage 1 Ground RF input Internally connected, on-chip matching; must not be externally connected Ground 3 4846B–WLAN–04/05 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Junction temperature Storage temperature Input RF power Control voltage power up/down and biasing Test Conditions Symbol VCC ICC Tj TStg PIN VCONTR Value TBD 600 150 –40 to +125 12 0 to +3.0 500 Unit V mA °C °C dBm V V ESD protection, all pins EIA/JESD22-A114-B VESD Note: 1. The part may not survive all maximums applied simultaneously. 4. Operating Range Parameters Supply voltage range Ambient temperature range Frequency range Symbol VCC Tamb f Value 2.7 to 3.6 –40 to +85 2400 to 2500 Unit V °C MHz 5. Electrical Characteristics Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. 1.0 1.1 1.2 1.3 Parameters Control voltage range Current consumption Test Conditions PA operating mode Power down mode Quiescent Power down mode Pin Symbol VCONTR VCONTR ICQ IPD 90 10 Min. 1 Typ. Max. 2 0.2 mA µA Unit V Type* A A A A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] 6. Electrical Characteristics – Unmodulated Carrier Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. 2.0 2.1 2.2 2.3 Parameters Saturated output power P1dB output power Harmonic rejection Small signal gain POUT = 23 dBm ICQ, small signal condition ICQ, small signal condition 2.4 to 2.5 GHz –40 to +85°C ICQ, small signal condition ICQ, small signal condition ICQ, small signal condition, with external matching Test Conditions For reference Pin Symbol PSAT P1dB 2fout 3fout GL Min. Typ. 28.5 27 –45 –30 32 Max. Unit dBm dBm dBc dBc dB Type* A A C C A 2.4 Gain variation Gvarfreq Gvartemp ISOr VSWRIN VSWROUT –1 –1.5 40 2:1 +1 +1.5 dB dB dB A C C C 2.5 2.6 Reverse isolation Input 50Ω VSWR Output 50Ω VSWR 2.7 2:1 C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 7. Electrical Characteristics – 11 Mbps CCK Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 11 Mbps CCK modulation with Gaussian transmit filtering of BT = 0.4, conforming to IEEE 802.11b No. 3.0 Parameters Maximum linear output power Linear power gain Test Conditions ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc POUT = PLIN, ACPR1 ≥ 33 dBc, ACPR2 ≥ 55 dBc Pin Symbol PLIN GL Min. Typ. 23 Max. Unit dBm Type* A 3.1 32 dB A 3.2 Current consumption ICC 220 mA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 8. Electrical Characteristics – 54 Mbps OFDM Modulation Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C, 54 Mbps OFDM modulation, conforming to IEEE 802.11g; 0.7% EVM measurement equipment noise floor is included in the EVM measurement result. No. 4.0 4.1 4.2 Parameters Error vector magnitude Linear power gain Current consumption Test Conditions POUT = 19 dBm POUT = 19 dBm POUT = 19 dBm Pin Symbol EVM GL ICC Min. Typ. 2.0 32 150 Max. Unit % dB mA Type* A A A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 5 4846B–WLAN–04/05 9. Power Detector Test Conditions measured on Atmel’s evaluation board (unless otherwise stated): VCC = 3.3V, Frequency = 2.45 GHz, Tamb = 25°C No. 5.0 5.1 5.2 Parameters Detector voltage range Settling time Detector accuracy Test Conditions POUT = 5 to 25 dBm POUT = 5 to 25 dBm POUT = 5 to 25 dBm VCC = 2.7 to 3.6V Tamb = –40 to +85°C Pin Symbol VDET tSET ∆POUT Min. 0 0.5 ±0.7 Typ. Max. 2 Unit V µs dB Type* A C C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 10. Application Circuit Figure 10-1. Application Board Schematic V_PA2 V_PA3 C17(1) C11(1) C18(1) C12(1) C3 NC NC IC L2 C4 L3 L1 13 12 11 10 9 V_PA1 C16(1) C10(1) C2 ATR7032 14 GND_RF 8 RF_IN C1 15 50 Ω Input Match Interstage Matching Interstage Matching 7 T1 6 C5 T2 C7 PA_Out IC 16 5 GND_RF Paddle Standby/ Bias Circuitry Voltage Detector T1, T2: Microstrip Line Microstrip Line Length/mm Width/mm T1 4.3 0.64 T2 5.6 0.64 Metal layer distance to ground: 360 µm CU metal layer thickness: 35 µm 4.5 εr of dielectric material (FR4): (1) Components can be omitted depending on application C9(1) C19 R1(1) IC: internally connected; pin must not be connected to any other pin or supply chain 1 2 3 4 C8 VCTRL VCC VDET 6 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 10-2. Application Board Layout Table 10-1. Bill of Materials for Application Board Reference C1 C2 C3 C4 C5 C7 C8 C9 C10(1) C11(1) C12(1) C16(1) C17(1) C18(1) C19(1) R1 L1 L2 Value 4p7 56p 56p 56p 1p8 4p7 4p7 4p7 10n 10n 10n 1µ 1µ 1µ 1µ 22k 15n 15n Size 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 Component Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Resistor Inductor Inductor Note: 15n Inductor L3 1. Components can be omitted depending on application 7 4846B–WLAN–04/05 10.1 Evaluation Board Set-up Instructions After connection of all cables (RF and DC): • VCC, VV_PA1, VV_PA2, VRF_Out = 3.3V • Increase VCTRL until 90 mA quiscent current without RF signal is reached (~ 1.05V) • Incease input power until desired linear output power is reached 11. Typical Operating Characteristics Figure 11-1. Typical Gain and Current versus Control Voltage: Frequency = 2450 MHz; PIn = –40 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 30 20 10 IV_PA3 0 -10 IV_PA2 -20 -30 0.6 0.8 1 1.2 1.4 1.6 IV_PA1 + IVCC 1.8 2 50 0 150 100 Gain Itot 350 300 250 200 Gain (dB) VCTRL (V) Figure 11-2. Typical Operating Point for 54 Mbps OFDM Modulation: Frequency = 2450 MHz; POut = 19 dBm; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 3.5 180 3 170 I 2.5 Itot 160 EVM (%) EVM 2 150 1.5 140 1 130 0.5 Operating Point 120 0 0.9 0.95 1 1.05 1.1 1.15 1.2 110 VCTRL (V) 8 ATR7032 [Preliminary] 4846B–WLAN–04/05 I (mA) I (mA) ATR7032 [Preliminary] Figure 11-3. Typical S-Parameter at Operating Point: VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 30 20 10 0 -10 -20 -30 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 10 S22 S11 -10 -20 -30 -40 S21 S12 -50 -60 -70 f (GHz) Figure 11-4. Typical S-Parameter at Operating Point (Detail): VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 30 20 S11 S22 S21 10 0 -10 -20 -30 -40 -50 -60 -70 2.50 S21 (dB) 10 0 -10 -20 -30 -40 2.40 2.43 2.45 S12 2.48 f (GHz) S12, S11 and S22 (dB) S12, S11 and S22 (dB) 0 S21 (dB) 9 4846B–WLAN–04/05 Figure 11-5. Typical Power-sweep with Unmodulated Carrier at Operating Point: Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 50 45 PAE 40 Gain 35 30 25 20 15 10 5 0 3 5 7 9 11 13 15 17 19 21 23 25 27 29 IV_PA2 IV_PA1 + IVCC IV_PA3 350 300 250 200 150 100 50 0 400 Itot 500 450 Gain (dB) and PAE (%) POut (dBm) Figure 11-6. Typical Power-sweep with Unmodulated Carrier at Operating Point (Temperature Behaviour): Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 40 38 550 500 Gain (-40°C) Gain (+25°C) Gain (+85°C) 450 400 Gain (dB) and PAE (%) 36 34 32 30 28 26 24 22 20 3 5 7 9 11 13 15 17 19 21 Itot (-40°C) Itot (+85°C) Itot (+25°C) 300 250 200 150 100 50 23 25 27 29 Pout (dBm) 10 ATR7032 [Preliminary] 4846B–WLAN–04/05 I (mA) 350 I (mA) ATR7032 [Preliminary] Figure 11-7. Typical Spectral Plot Conforming Compliance to 802.11b Spectral Mask for 11 Mbps CCK Modulation at Operating Point: POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 220 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V * RBW 100 kHz * VBW 100 kHz * SWT 20 ms CH PWR 22.79 dBm A TRG LVL Ref 20 1 RM * AVG 10 0 -10 -20 -30 -40 -50 -60 -70 21.1 dBm Offset 20.8 dB * At t 0 dB LIMIT CHECK MARG LINE ACPRBU_G MARG 33 dBc EXT 55 dBc Center 2.45 GHz 10 MHz/ Span 100 MHz Figure 11-8. Typical Power-sweep with 54 Mbps OFDM Modulation at Operating Point: Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 4.0 3.5 3.0 180 170 160 150 Itot EVM 140 130 120 110 100 15 16 17 18 19 20 21 EVM (%) 2.5 2.0 1.5 1.0 0.5 0.0 POut (dBm) I (mA) 11 4846B–WLAN–04/05 Figure 11-9. Typical Spectral Plot Conforming Compliance to 802.11g Spectral Mask for 54 Mbps OFDM Modulation at Operating Point: POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICC = 150 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Ref 10 1 RM * AVG 0 -10 -20 -30 -40 -50 -60 -70 -80 Center 2.45 GHz 10 MHz/ Span 100 MHz EXT 13.1 dBm Offset * At t 5 dB * RBW 100 kHz * VBW 100 kHz * SWT 20 ms CH PWR 18.98 dBm A GAT TRG LVL 20.8 dB Figure 11-10. Typical Detector Voltage versus POut for Unmodulated Carrier (Temperature and VCC parameterized): Frequency = 2450 MHz; VCTRL = 1.05 V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 2.7V, 3.3V, 3.6V; Tamb = –40°C, 25°C, 85°C 3.0 2.5 Voltage (V) 2.0 1.5 VDET 1.0 0.5 0.0 -5 -1 3 7 11 15 19 23 27 POut (dBm) 12 ATR7032 [Preliminary] 4846B–WLAN–04/05 ATR7032 [Preliminary] Figure 11-11. Power Detector Response (Rising Edge): POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V Figure 11-12. Power Detector Response (Falling Edge): POut = 23 dBm; Frequency = 2450 MHz; VCTRL = 1.05V; ICQ = 90 mA; VV_PA1 = VV_PA2 = VRF_Out = VCC = 3.3V 13 4846B–WLAN–04/05 12. Ordering Information Extended Type Number ATR7032-PVPW ATR7032-PVQW ATR7032-DEV-BOARD Package QFN16, 3 × 3 QFN16, 3 × 3 – Remarks Taped and 80 mm reeled, RoHs compliant Taped and 330 mm reeled, RoHs compliant Evaluation board MOQ 6000 pcs. 1500 pcs. 1 13. Package Information Package: QFN 16 - 3x3 Exposed pad 1.7x1.7 (acc. JEDEC OUTLINE No. MO-220) Dimensions in mm Not indicated tolerances ±0.05 3 0.9±0.1 0.05 -0.05 68 2. +0 1.7 1 4 0.25 0.4±0.1 16 13 12 9 8 16 1 4 5 0.5 nom. Drawing-No.: 6.543-5115.01-4 Issue: 1; 07.03.05 Assembly Chip PAC 1.5 14 ATR7032 [Preliminary] 4846B–WLAN–04/05 0. 15 technical drawings according to DIN specifications A tmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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