MM0-65609EV-40MQ

Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 180 mW (Max) – Standby: 70 µW (Typ) Wide Temperature Range: -55 °C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35 Micron Process Latch-up Immune 200 Krads capability SEU LET Better Than 3 MeV Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current (Typical value = 20 µA) with a fast access time at 40 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65609E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML. It is produced on the same process as the MH1RT sea of gates series. Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM M65609E Rev. 4158D–AERO–06/02 1 Block Diagram Pin Configuration 32 pins Flatpack 400 MILS Pin Description Table 1. Pin Names Name A0 - A16 I/O1 - I/O8 CS1 CS2 WE OE Description Address Inputs Data Input/Output Chip Select 1 Chip Select 2 Write Enable Output Enable Power Ground VCC GND 2 M65609E 4158D–AERO–06/02 M65609E Table 2. Truth Table CS1 H CS2 X WE X OE X Inputs/ Outputs Z Mode Deselect/ Power-down Deselect/ Power-down Read Write Output Disable X L L L Note: L H H H X H L H X L X H Z Data Out Data In Z L = low, H = high, X = H or L, Z = high impedance. 3 4158D–AERO–06/02 Electrical Characteristics Absolute Maximum Ratings Supply Voltage to GND Potential ............................ -0.5V + 5V DC Input Voltage.............................. GND - 0.3V to VCC + 0.3 DC Output Voltage High Z State ...... GND - 0.3V to VCC + 0.3 Storage Temperature .................................... -65°C to + 150°C Output Current Into Outputs (Low) ............................... 20 mA Electro Statics Discharge Voltage............................... > 2001V (MIL STD 883D Method 3015.3) *NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Military Operating Range Operating Voltage 3.3V + 0.3V Operating Temperature -55°C to + 125°C Recommended DC Operating Conditions Parameter Description Supply voltage Ground Input low voltage Input high voltage Min 3 0.0 GND - 0.3 2.2 Typ 3.3 0.0 0.0 – Max 3.6 0.0 0.8 Unit V V V V VCC Gnd VIL VIH VCC + 0.3 Capacitance Parameter CIN (1) COUT(1) Note: Description Input low voltage Output high voltage Min – – Typ – – Max 8 8 Unit pF pF 1. Guaranteed but not tested. 4 M65609E 4158D–AERO–06/02 M65609E DC Parameters DC Test Conditions Parameter IIX (1) Description Input leakage current Output leakage current Output low voltage Output high voltage Minimum -1 Typical – Maximum 1 Unit µA IOZ (1) VOL VOH 1. 2. 3. (2) (3) -1 2.4 – – – 1 0.4 – µA V V Gnd < Vin < VCC, Gnd < Vout < VCC Output Disabled. VCC min. IOL = 1 mA. VCC min. IOH = -0.5 mA. Consumption Symbol ICCSB (1) ICCSB 1 (2) ICCOP (3) 1. 2. 3. Description Standby supply current Standby supply current Dynamic operating current 65609E-40 2.5 1.5 50 Unit mA mA mA Value max max max CS1 > VIH or CS2 < VIL and CS1 < VIL. CS1 > VCC - 0.3V or, CS2 < Gnd + 0.3V and CS1 < 0.2V F = 1/TAVAV, I OUT = 0 mA, W = OE = VIH, Vin = Gnd or VCC, VCC max. 5 4158D–AERO–06/02 Write Cycle Symbol tAVAW tAVWL tAVWH tDVWH tE1LWH tE2HWH tWLQZ tWLWH tWHAX tWHDX tWHQX Note: Parameter Write cycle time Address set-up time Address valid to end of write Data set-up time CS1 low to write end CS2 high to write end Write low to high Z (1) Write pulse width Address hold from to end of write Data hold time Write high to low Z (1) 65609E-40 35 0 28 28 28 28 15 28 +3 0 0 Unit ns ns ns ns ns ns ns ns ns ns ns Value min min min min min min max min min min min 1. Parameters guaranteed, not tested, with 5 pF output loading (see Section “AC Test Conditions” Figure 2). Read Cycle Symbol tAVAV tAVQV tAVQX tE1LQV tE1LQX tE1HQZ tE2HQV tE2HQX tE2LQZ tGLQV tGLQX tGHQZ Note: Parameter Read cycle time Address access time Address valid to low Z Chip-select1 access time CS1 low to low Z (1) CS1 high to high Z (1) Chip-select2 access time CS2 high to low Z (1) CS2 low to high Z (1) Output Enable access time OE low to low Z (1) OE high to high Z (1) 65609E-40 40 40 3 40 3 15 40 3 15 12 0 10 Unit ns ns ns ns ns ns ns ns ns ns ns ns Value min max min max min max max min max max min max 1. Parameters guaranteed, not tested, with 5 pF output loading (seeSection “AC Test Conditions” Figure 2). 6 M65609E 4158D–AERO–06/02 M65609E AC Parameters AC Test Conditions Input Pulse Levels: ....................................................... GND to 3.0V Input Rise/Fall Times: .................................................. 5 ns Input Timing Reference Levels: ................................... 1.5V Output loading IOL/IOH (see figure 1 and 2)................ +30 pF AC Test Loads Waveforms Figure 1 R1 2552 3.3V 3.3V Figure 2 R1 2552 Figure 3 2824 2824 1340 V 7 4158D–AERO–06/02 Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. During data retention CS must be held high within VCC to VCC - 0.2V or chip select BS must be held down within GND to GND +0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power-up and power-down transitions CS and OE must be kept between VCC + 0.3V and 70% of VCC, or with BS between GND and GND -0.3V. 4. The RAM can begin operation > t R ns after VCC reaches the minimum operation voltages (3V). Figure 1. Data Retention Timing 3V 3V BS Data Retention Characteristics Parameter Description Min 2.0 0.0 tAVAV(1) – Typical TA = 25°C – – – 0.010 Max – – – 1.0 Unit V ns ns mA VCCDR TCDR tR ICCDR1 (2) Notes: VCC for data retention Chip deselect to data retention time Operation recovery time Data retention current at 2.0V 1. TAVAV = Read Cycle Time 2. CS1 = VCC or CS2 = CS1 = GND, VIN = GND/VCC. 8 M65609E 4158D–AERO–06/02 M65609E Write Cycle 1. WE Controlled. OE High During Write Write Cycle 2. WE Controlled. OE Low 9 4158D–AERO–06/02 Write Cycle 3. CS1 or CS2 Controlled(1) Note: 1. The internal write time of the memory is defined by the overlap of CS1 LOW and CS2 HIGH and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in activated. The data input setup and hold timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE = VIH. 10 M65609E 4158D–AERO–06/02 M65609E Read Cycle nb 1 Read Cycle nb 2 Read Cycle nb 3 11 4158D–AERO–06/02 Ordering Information Part Number MMDJ-65609EV-40 MMDJ-65609EV-40MQ MMDJ-65609EV-40-E MMDJ-65609EV-40/883 SMDJ-65609EV-40/883 MM0-65609EV-40-E MM0-65609EV-40MQ Note: (1) (1) Temperature Range -55 to +125 °C -55 to +125 °C 25°C -55 to +125 °C -55 to +125 °C 25°C -55 to +125 °C Speed 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns Package FP32.4 FP32.4 FP32.4 FP32.4 FP32.4 Die Die Flow Standard Mil QML Q Engineering Samples MIL 883 B MIL 883 S Engineering Samples QML Q 1. Contact Atmel for availability. 12 M65609E 4158D–AERO–06/02 M65609E Package Drawing 32-pin Flat Pack (400 Mils) 13 4158D–AERO–06/02 Atmel Headquarters Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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