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SMDJ-65608EV-45SB

SMDJ-65608EV-45SB

  • 厂商:

    ATMEL(爱特梅尔)

  • 封装:

  • 描述:

    SMDJ-65608EV-45SB - Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM - ATMEL Corporation

  • 数据手册
  • 价格&库存
SMDJ-65608EV-45SB 数据手册
Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption – Active: 250 mW (Typ) – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55 °C to +125°C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous Single 5V Supply Equal Cycle and Access Time Gated Inputs: – No Pull-up/down – Resistors Are Required QML Q and V with SMD 5962-89598 ESCC B with Specification 9301/047 • • • • • • • • • Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM M65608E Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 µA) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65608E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML. Rev. 4151I–AERO–03/04 1 M65608E Block Diagram Pin Configuration 32-lead DIL side-brazed 32-lead Flatpack 400 MILS 400 MILS 2 4151I–AERO–03/04 Pin Description Table 1. Pin Names Names A0 - A16 I/O0 - I/O7 CS1 CS2 WE OE VCC GND Description Address inputs Data Input/Output Chip select 1 Chip select 2 Write Enable Output Enable Power Ground Table 2. Truth Table CS1 H CS2 X W X OE X Inputs/ Outputs Z Mode Deselect/ Power-down Deselect/ power-down Read Write Output Disable X L L L Note: L H H H X H L H X L X H Z Data Out Data In Z L = low, H = high, X = H or L, Z = high impedance. 3 M65608E 4151I–AERO–03/04 M65608E Electrical Characteristics Absolute Maximum Ratings Supply voltage to GND potential:..........................-0.5V + 7.0V DC input voltage: ..............................GND - 0.5V to VCC + 0.5 DC output voltage high Z state: ........GND - 0.5V to VCC + 0.5 Storage temperature: ..................................... -65 °C to +150°C Output current into outputs (low): .................................. 20 mA Electro statics discharge voltage: ............................... > 2001V (MIL STD 883D method 3015.3) *NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Military Operating Range Operating Voltage 5V + 10% Operating Temperature -55°C to + 125°C Recommended DC Operating Conditions Parameter Description Minimum 4.5 0.0 GND - 0.5 2.2 Typical 5.0 0.0 0.0 – Maximum 5.5 0.0 0.8 VCC + 0.5 Unit V V V V VCC GND VIL VIH Capacitance Parameter Supply voltage Ground Input low voltage Input high voltage Description Minimum – – Typical – – Maximum 8 8 Unit pF pF Cin(1) Cout(1) Note: Input low voltage Output high voltage 1. Guaranteed but not tested. 4 4151I–AERO–03/04 DC Parameters DC Test Conditions Table 3. DC Test Conditions TA = -55°C to + 125°C; Vss = 0V; VCC = 4.5V to 5.5V Symbol Description Minimum -1 Typical – Maximum 1 Unit µA IIX (1) IOZ(1) VOL (2) VOH (3) 1. 2. 3. Input leakage current Output leakage current Output low voltage Output high voltage -1 – 2.4 – – – 1 0.4 – µA V V GND < Vin < VCC, GND < Vout < VCC Output Disabled. VCC min. IOL = 8 mA. VCC min. IOH = -4 mA. Consumption Symbol Description 65608E-30 2 65608E-45 2 Unit mA Value max ICCSB (1) ICCSB1 (2) ICCOP (3) 1. 2. 3. Standby supply current Standby supply current Dynamic operating current 300 300 µA max 130 100 mA max CS1 > VIH or CS2 < VIL and CS1 < VIL. CS1 > VCC - 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V. F = 1/TAVAV, Iout = 0 mA, W = OE = VIH, Vin = GND or VCC, VCC max. 5 M65608E 4151I–AERO–03/04 M65608E AC Parameters AC Test Conditions Input Pulse Levels: ....................................GND to 3.0V Input Rise/Fall Times: ...............................5 ns Input Timing Reference Levels: ................1.5V Output loading IOL/IOH (see Figure 1 and Figure 2)+30 pF AC Test Loads Waveforms Figure 1 Figure 2 Figure 3 Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. During data retention chip select CS1 must be held high within VCC to VCC 0.2V or, chip select CS2 must be held down within GND to GND +0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power up and power-down transitions CS1 and OE must be kept between VCC + 0.3V and 70% of VCC, or with CS2 between GND and GND -0.3V. 4. The RAM can begin operation > TR ns after VCC reaches the minimum operation voltages (4.5V). Timing 6 4151I–AERO–03/04 Data Retention Characteristics Parameter Description Minimum 2.0 Typical TA = 25 °C – Maximum – Unit V VCCDR VCC for data retention Chip deselect to data retention time Operation recovery time Data retention current at 2.0V Data retention current at 3.0V TCDR 0.0 – – ns TR TAVAV(1) – – ns ICCDR1 (2) – 0.1 150 µA ICCDR2 (2) – 0.2 200 µA Notes: 1. TAVAV = Read Cycle Time 2. CS1 = VCC or CS2 = CS1 = G ND, Vin = GND/ VCC, this parameter is only tested at VCC = 2V. Write Cycle Symbol Parameter 65608-30 30 0 22 18 22 22 8 22 0 0 0 65608-45 45 0 35 20 35 35 15 35 0 0 0 Unit ns ns ns ns ns ns ns ns ns ns ns Value min min min min min min max min min min min TAVAW TAVWL TAVWH TDVWH TE1LWH TE2HWH TWLQZ TWLWH TWHAX TWHDX TWHQX Note: Write cycle time Address set-up time Address valid to end of write Data set-up time CS1 low to write end CS2 high to write end Write low to high Z(1) Write pulse width Address hold from to end of write Data hold time Write high to low Z(1) 1. Parameters guaranteed, not tested, with output loading 5 pF. 7 M65608E 4151I–AERO–03/04 M65608E Read Cycle Symbol Parameter 65608-30 30 30 5 30 3 15 30 3 15 12 0 8 65608-45 45 45 5 45 3 20 45 3 20 15 0 15 Unit ns ns ns ns ns ns ns ns ns ns ns ns Value min max min max min max max min max max min max TAVAV TAVQV TAVQX TE1LQV TE1LQX TE1HQZ TE2HQV TE2HQX TE2LQZ TGLQV TGLQX TGHQZ Note: Read cycle time Address access time Address valid to low Z(1) Chip-select1 access time CS1 low to low Z(1) CS1 high to high Z(1) Chip-select2 access time CS2 high to low Z(1) CS2 low to high Z(1) Output Enable access time OE low to low Z(1) OE high to high Z(1) 1. Parameters Guaranteed, not tested, with output loading 5 pF. 8 4151I–AERO–03/04 Write Cycle 1 WE Controlled, OE High During Write Write Cycle 2 WE Controlled, OE Low 9 M65608E 4151I–AERO–03/04 M65608E Write Cycle 3 CS1 or CS2, Controlled Note: The internal write time of the memory is defined by the overlap of CS1 Low and CS2 HIGH and W LOW. Both signals must be actived to initiate a write and either signal can terminate a write by going in actived. The data input setup and hold timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE = VIH. 10 4151I–AERO–03/04 Read Cycle 1 Read Cycle 2 Read Cycle 3 11 M65608E 4151I–AERO–03/04 M65608E Ordering Information Part Number Temperature Range -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C -55° to +125 °C 25 °C (1) Speed 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 45 ns 30 ns 30 ns 30 ns 30 ns 30 ns Package FP32.4 FP32.4 SB32.4 SB32.4 FP32.4 FP32.4 SB32.4 SB32.4 FP32.4 FP32.4 SB32.4 SB32.4 FP32.4 FP32.4 SB32.4 SB32.4 FP32.4 SB32.4 Die Die Die Flow Standard Mil Standard Mil Standard Mil Standard Mil SCC B SCC B SCC B SCC B QML Q QML Q QML V QML V QML Q QML Q QML V QML V Engineering Samples Engineering Samples Engineering Samples QML Q QML V MMDJ-65608EV-30 MMDJ-65608EV-45 MMC9-65608EV-30 MMC9-65608EV-45 SMDJ-65608EV-30SB SMDJ-65608EV-45SB SMC9-65608EV-30SB SMC9-65608EV-45SB 5962-8959847QTC 5962-8959818QTC 5962-8959847VTC 5962-8959818VTC 5962-8959847QZC 5962-8959818QZC 5962-8959847VZC 5962-8959818VZC MMDJ-65608EV-30-E MMC9-65608EV-30-E MM0 -65608EV-30-E 5962-8959847Q6A 5962-8959847V6A Note: 25 °C 25 °C -55° to +125 °C -55° to +125 °C 1. Contact Atmel for availability. 12 4151I–AERO–03/04 Package Drawings 32-lead Flat Pack 400 Mils 13 M65608E 4151I–AERO–03/04 M65608E Package Drawings 32-lead Side Braze 400 Mils 14 4151I–AERO–03/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 e-mail literature@atmel.com Web Site http://www.atmel.com Disclaimer: A tmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. © Atmel Corporation 2004. A ll rights reserved. A tmel® and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4151I–AERO–03/04 /xM
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