2N3906

Semiconductor 2N3906 PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. 2N3906 Marking 2N3906 Package Code T0-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Base 3. Collector 1.20±0.1 0.38 KST-9011-000 1 2N3906 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -40 -40 -5 -200 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-30V, VEB=-3V VCE=-1V, IC=-10mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc Min. -40 -40 -5 100 250 - Typ. Max. -50 300 -0.4 4.5 35 35 225 75 Unit V V V nA V MHz pF ns ns ns ns KST-9011-000 2 2N3906 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC KST-9011-000 3