2N5551

Semiconductor 2N5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with 2N5401 Ordering Information Type NO. 2N5551 Marking 2N5551 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Base 3. Collector 1.20±0.1 0.38 KST-9041-000 1 2N5551 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 180 160 6 600 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE (1) hFE (2) hFE (3) VCE(sat)(1) VBE(sat)(1) fT Cob * Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 180 160 6 80 80 30 100 0.2 0.5 1 1 400 6 250 100 100 Unit V V V nA nA V V V V MHz pF VCE(sat)(2)* * VBE(sat)(2)* * : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0% KST-9041-000 2 2N5551 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC - VBE Fig. 3 fT - IC Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-9041-000 3